• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 2003.10a
• /
• pp.226-229
• /
• 2003

Following the successful development of practical high temperature superconducting (HTS) wires, there has been renewed activity in the development of superconducting power equipments. HTS equipments must be operated in the coolant, such as liquid nitrogen (L$N_2$) or cooled by cooler, such as GM-cryocooler to maintain the temperature below critical temperature. In this paper, dielectric strength of some insulating materials, such as epoxy, teflon, and glass fiber reinforced plastic (GFRP) in L$N_2$was measured. Surface breakdown voltage of GFRP which is basic property in design of HTS solenoid coil was measured. Epoxy is a goof insulating material but it is fragile at cryogenic temperature. The multi-layer insulating method of current lead is suggested to compensate this fragile property. It consists of teflon tape layer and epoxy layer fixed with texture. Based on these measurements, the 6.6㎸ class HTS magnet for DC reactor type high-T$_{c}$ superconducting fault current limiter (SFCL) was successfully fabricated and tested.d.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.32 no.5
• /
• pp.157-163
• /
• 1983

Positive and negative coronas in point-to-plane short gap have been investigated with the variations of point radius and gap length. Mainly the onset potentials and current pulses under various conditions were measured with a 70 MHz C.R.O. and a precise-controllable D.C. power supply. In the case of negative corona, the Trichel pulse corona, glow corona and spark regions were distinguished apparently and the critical gap lengths between them were also found clearly. In the case of positive corona, there are streamer corona, spark regions and the critical gap length between them, too. The current pulse forms of Trichel pulse corona of negative and streamer pulse corona of positive are similar in rising time, peak-to-peak time and pulse width. The glow corona current shows D.C. component in form.

• Journal of Power Electronics
• /
• v.18 no.1
• /
• pp.116-128
• /
• 2018

Conventionally, in order to reduce the ac components of the dc-link capacitors of the two-level Half-Bridge Voltage Source Inverter (HB-VSI), high dc-link capacitances are required. This necessitates the employment of short-lifetime and bulky electrolytic capacitors. In this paper, an analysis for the performance of low dc-link capacitances-based HB-VSI is presented to elucidate its ability to generate an enhanced fundamental output voltage magnitude without increasing the voltage rating of the involved switches. This feature is constrained by the load displacement factor. The introduced enhancement is due to the ac components of the capacitors' voltages. The presented approach can be employed for multi-phase systems through using multi single-phase HB-VSI(s). Mathematical analysis of the proposed approach is presented in this paper. To ensure a successful operation of the proposed approach, a closed loop current controller is examined. An expression for the critical dc-link capacitance, which is the lowest dc-link capacitance that can be employed for unipolar capacitors' voltages, is derived. Finally, simulation and experimental results are presented to validate the proposed claims.

• Progress in Superconductivity and Cryogenics
• /
• v.17 no.3
• /
• pp.37-40
• /
• 2015

Recently, the electrical insulation design for electrical apparatuses is important to cope with the tendency of high voltage. The degradation characteristics of a superconducting coil due to an electrical breakdown should be considered to design a high voltage superconducting coil. In this paper, the degradation characteristics of 2G high temperature superconducting (HTS) wires are studied with respect to electrical breakdown tests. To analyze the dependency of the degradation characteristics of 2G HTS wires, the electrical breakdown tests are performed with AC(alternating current) and DC(direct current) voltage. All tests are performed by applying various magnitudes of AC and DC breakdown voltages. To verify the degradation characteristics of 2G HTS wires, the tests are performed with various 2G HTS wires with respect to stabilizer materials. The degradation characteristics of 2G HTS wires, such as Ic(critical current) and index number are measured by performing electrical breakdown tests. It is found that the characteristics such as Ic and index number can be degraded by an electrical breakdown. Moreover, it is concluded that the degradation characteristics of 2G HTS wires are affected by the stabilizer material and applied voltages. The cross-sectional view of 2G HTS wires is observed by using a scanning electron microscope (SEM). As results, it is found that the degradation characteristics of 2G HTS wires are concerned with hardness and electrical conductivity of stabilizer layers.

• Proceedings of the KIEE Conference
• /
• 2000.11a
• /
• pp.236-242
• /
• 2000

NZP velocities were investigated on Ag sheathed multi filamentary Bi-2223 tape and direction type HTS cable. The critical current($I_c$) of Ag sheathed Bi-2223 tape and direction type HTS cable were 12 A, 63 A at 77 K, 0 T. NZP velocities of tape with two condition of DC and AC were almost same at each temperature. In case of DC, the NZP velocities of numerical analysis and experiment were almost same. NZP velocities of direction type HTS cable were 1.9-2.4 cm/sec. The result shows that the total transport current of spiral type HTS cable in $LN_2$ was 475[A], and transport current passed through almost the outer layer (2-layer). Also, AC transport losses in outer layer of HTS cable was proportion to $I^2$ and higher than losses of inner layer. And in case of $I_p=I_c$, calculated numerical loss density was concentrated on the edge of tape and most of loss density in cable was distributed outer layer more than inner layer.

• Journal of the Korean Vacuum Society
• /
• v.10 no.1
• /
• pp.27-30
• /
• 2001

Electromigration Phenomena in Al-1%Si thin film interconnections under DC and PDC conditions were investigated. Thin film interconnections with $SiO_2$ and PSG/$SiO_2$ dielectric passivation layer were formed by a standard photolithography process method and test line lengths were 100, 400, 800, 1200, and 1600 $\mu\textrm{m}$. The current density of $1.19\times10^7\textrm{A/cm}^2$ was stressed in Al-1%Si thin film interconnections under DC condition. The current density of $1.19\times10^7\textrm{A/cm}^2$ was also applied under PDC condition at the frequency of 1 Hz with the duty factor of 0.5. The electromigration resistance of PSG/SiO2 dielectric passivation test line was stronger than $SiO_2$ dielectric passivation test line. The lifetime under PDC was 2-4 times longer than DC condition. As the thin film interconnection line increased, the lifetime decreased and saturated over the critical length. Failure patterns by an electromigration were dominated by void-induced electrical open and hillock-induced electrical short.

• Corrosion Science and Technology
• /
• v.9 no.6
• /
• pp.276-280
• /
• 2010

Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.354-354
• /
• 2007

Titanium nitride (TiN) thin films are widely used for hard coatings due to their superior hardness. In this paper, we wanted see how the films properties are changed according to DC power. TiN thin films were deposited by direct current (DC) magnetron sputtering method using TiN compound target on silicon substrates. The films structural properties are examined by X-ray Diffractions (XRD) and tribological properties are measured by nano-indentation, nano-scratch tester, nano-stress tester. Especially in DC power of 150 W, the maximum hardness and the minimum residual stress of TiN film exhibited about 25 GPa and 1 GPa, respectively. And also, the critical load of TiN film prepared by magnetron sputtering method were measured over 30 N.

• Journal of the Korean Society of Industry Convergence
• /
• v.23 no.2_1
• /
• pp.139-147
• /
• 2020

In order to satisfy the voltage levels of the low voltage battery side and high voltage DC bus, a high voltage gain with bidirectional operation is required. In this system, the cost effectiveness of the design is a critical factor; therefore, the system should be designed using a small number of components. This paper propose a novel bidirectional converter composed with a quasi-sepic and switched-indictor network. The proposed converter consists a small number of components with a high voltage gain ratio. Detailed analysis are made with respect to the operating mode, number of components, voltage and current ripple and efficiency. To verify performance of the proposed converter, simulation was performed is this paper. The simulation results are shown to verify the feasibility and performance of the proposed bidirectional converter.

• Proceedings of the KIPE Conference
• /
• 2018.07a
• /
• pp.210-212
• /
• 2018

A new switching mode has been proposed to obtain high power factor and low THD in single stage AC-DC converter. The conventional voltage mode control in critical conduction mode distorts input current shape with poor THD in flyback topology. Once TRIAC dimmer is connected, visible flicker in the LED lamp is easily detected due to a lack of TRAIC holding current near the input voltage zero cross. The newly proposed method can shape the input current by providing a desired reference voltage so that low THD is obtained by ideal sinusoidal input current in case of no dimmer connection and flat input current performs good TRIAC dimmer compatibility in phase-cut dimming condition. To confirm the validity of the proposed method, theoretical analysis and experimental result from 8W dimmable LED lighting system are presented.