• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.6
• /
• pp.454-459
• /
• 2020

In this study, a TiO₂/TiO_2-x-based resistance variable memory was fabricated using a DC/RF magnetron sputtering system and ALD. In order to analyze the effect of oxygen plasma treatment on the performance of resistance random access memory (ReRAM), the TiO₂/TiO_2-x-based ReRAM was evaluated by applying RF power to the TiO_2-x oxygen-holding layer at 30, 60, 90, 120, and 150 W, respectively. The ReRAM was fabricated, and the electrical and surface area performances were compared and analyzed. In the case of ReRAM without oxygen plasma treatment, the I-V curve had a hysteresis curve shape, but the width was very small, with a relatively high surface roughness of the oxygen-retaining layer. However, in the case of oxygen plasma treatment, the HRS/LRS ratio for the I-V curve improved as the applied RF power increased; stable improvement was also noted in the surface roughness of the oxygen-retaining layer. It was confirmed that the low voltage drive was not smooth due to charge trapping in the oxygen diffusion barrier layer owing to the high intensity ReRAM applied with an RF power of approximately 150 W.

• Bulletin of the Korean Chemical Society
• /
• v.15 no.2
• /
• pp.122-126
• /
• 1994

Corrosion of brass coated steel cords in the acetonitrile solution of sulfenamide derivatives, N-Cyclohexylbenzothiazole-2-sulfenamide (CBTS), N,N'-Dicyclohexylbenzothiazole-2-sulfenamide (DCBS), N-tert-Butylbenzothiazole-2-sulfenamide (TBBS), N-tert-Amylbenzothiazole-2-sulfenamide (TABS), and N-Oxydiethylbenzothiazole-2-sulfenamide (OBTS) was investigated by potentiostatic anodic and cathodic polarization (Tafel plot), DC polarization resistance, and AC impedance measurements. The corrosion current densities and rates are 1.236 ${\mu}A /cm^2$ and 0.655 MPY for CBTS; 1.881 ${\mu}A/cm^2$ and 0.988 MPY for DCBS; 2.367 ${\mu}A/cm^2$ and 1.257 MPY for TBBS; 3.398 ${\mu}A /cm^2$ and 1.809 MPY for TABS, respectively. OBTS among derivatives under study shows the lowest corrosion density (0.546 ${\mu}A /cm^2$) and the slowest corrosion rate (0.288 MPY). Also, the charge transfer resistances and the double layer capacitances are 275.21 $k{\Omega}{\cdot}cm^2$ and 7.0 ${\mu}F{cdot}cm^{-2}$ for CBTS; 14.24 ${\mu}F{\cdot}cm^2$ and 26 ${\mu}F{\cdot}cm^{-2}$ for DCBS; 54.15 $k{\Omega}{\cdot}cm^2$ and 26 ${\mu}F{\cdot}cm^{-2}$ for TBBS; 0.96$k{\Omega}{\cdot}cm^2$ and 83 ${\mu}F{\cdot}cm^{-2}$ for TABS, respectively. The weaker the electron donating inductive effect of derivatives is and the smaller the effect of steric hindrance is, the more the corrosion of brass coated steel cords in the acetonitrile solution of sulfenamide derivatives is prevented. The above results agree with that observed in the field of tire industry.

• Journal of the Korean Solar Energy Society
• /
• v.37 no.4
• /
• pp.23-33
• /
• 2017

A great deal of study for loss reduction of photovoltaic system is conducted currently. It is hard to distinct the fault of photovoltaic system with the naked eye. For that reason, it is essential to repair and maintain the PV system by monitoring the system. The fault of individual modules can cause the huge loss of the entire system because of the mismatch. Therefore, the method of diagnosing the PV array is necessary by measuring the multi-channel arrays simultaneously. In this paper, it is presented the method of measuring I-V curve of multi-channel arrays simultaneously by using the charge and discharge characteristics of capacitor. Generated DC power at PV arrays is charged and discharged at the capacitors in a moment. By measuring the charged voltage and current, it is possible to diagnose of performance of PV arrays.

• Journal of the Korean Society of Industry Convergence
• /
• v.24 no.5
• /
• pp.589-596
• /
• 2021

In this study, the optimum gating system was designed, and the two zinc alloy worm gears were manufactured in single process by applying a symmetrical gating system with 2 runners. The SRG ratio is set to 1 : 0.9 : 0.6, and the cross-sectional shapes such as sprue, runner and gate are designed. In order to determine whether the design of the gating system is appropriate, casting analysis was carried out. It takes 4.380 s to charge the casting 100%, 0.55 to 0.6 m/s at the gates and solidification begins after the casting is fully charged. The amount of air entrapment is 2% in the left gear and 6% in the right gear. Hot spots occurred in the center hole of the gear, and pores were found to occur around the upper part of the hole. Therefore, the design of the casting method is suitable for worm gears. CT analysis showed that all parts of worm gear were distributed with fine pores and some coarse pores were distributed around the central hole of worm gear. The yield strength and tensile strength were 220 MPa, 285 MPa, and the elongation rate was 8%. Vickers hardness is 82 HV.

• Nuclear Engineering and Technology
• /
• v.51 no.5
• /
• pp.1428-1435
• /
• 2019

The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous ($P^{7+}$) and 80 MeV nitrogen ($N^{6+}$) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ I-V characteristics like Gummel characteristics, excess base current (${\Delta}I_B$), net oxide trapped charge ($N_{OX}$), current gain ($h_{FE}$), avalanche multiplication (M-1), neutral base recombination (NBR) and output characteristics ($I_C-V_{CE}$) were analysed before and after irradiation. The significant degradation in device parameters was observed after $100MeV\;P^{7+}$ and $80MeV\;N^{6+}$ ion irradiation. The $100MeV\;P^{7+}$ ions create more damage in the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more when compared to $80MeV\;N^{6+}$. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from $50^{\circ}C$ to $400^{\circ}C$ in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature and isochronal annealing in total recovery.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.32 no.5
• /
• pp.199-204
• /
• 2022

A new three-dimensional Gd-MOF, [Gd(p-XBP4)₄(H₂O)]·W(CN)₈; (1; p-XBP4 = N,N'-p-phenylenedimethylenbis (pyridin-4-one)) has been synthesized by slow-evaporation and its crystal structure was characterized by single-crystal X-ray diffraction (SCXRD) analysis. For each Gd^III ion, there are seven coordination sites, which are occupied by six oxygen atoms of six p-XBP4 ligands and one oxygen atom from the water molecule. The [W(CN)₈]^3- anion exists for charge balance with cationic framework. The Gd^II ions are interconnected by the p-XBP4 ligand to form the three-dimensional structure. Considering the magnetic property of lanthanide ions, magnetic studies of Gd-MOF were investigated by direct-current (DC) magnetic susceptibilities measurements.

• Journal of the Korean Vacuum Society
• /
• v.14 no.1
• /
• pp.17-23
• /
• 2005

Glow discharge mass spectrometry(GDMS) was used to determine the impurity concentrations of the deposited Cu films and the 6N Cu target. Cu films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -50 V using a non-mass separated ion beam deposition method. Since do GDMS has a little difficulty to apply to thin films because of the accompanying non-conducting substrate, we have used an aluminum foil to cover the edge of the Cu film in order to make an electrical contact of the Cu film deposited on the non-conducting substrate. As a result, the Cu film deposited at the substrate bias voltage of -50 V showed lower impurity contents than the Cu film deposited without the substrate bias voltage although both the Cu films were contaminated during the deposition. It was found that the concentration change of each impurity in the Cu films by applying the negative substrate bias voltage is related to the difference in their ionization potentials. The purification effect by applying the negative substrate bias voltage might result from the following reasons: 1) Penning ionization and an ionization mechanism proposed in the present study, 2) difference in the kinetic energy of accelerated Cu+ ions toward the substrate with/without the negative substrate bias voltage.

• Applied Chemistry for Engineering
• /
• v.9 no.7
• /
• pp.1030-1035
• /
• 1998

The porous alumina membrane was prepared from aluminum metal(99.8%) by anodic oxidation using DC power supply of constant current mode in an aqueous solution of sulfuric acid. To prevent the chemical dissolution of alumina membrane, $Al_2(SO_4)_3$, $AlPO_4$ and $Al(NO_3)_3$ which could be considered to supply $Al^{3+}$ ions were added to electrolyte solution at a reaction temperature of $20^{\circ}C$ and cumulative charge of $150C/cm^2$. Effects of these additives on the formation of porous alumina membrane were evaluated under various electrolyte concentration(5~20 wt%) and current densities($10{\sim}50mA/cm^2$). The membrane surfaces which were prepared in electrolyte solution with all the additives except $Al_2(SO_4)_3$ were damaged. However, when $Al_2(SO_4)_3$ was added to the $H_2SO_4$ solution, an uniform surface of porous alumina was obtained. Also, it was shown that the pore size of membrane was nearly independent on the quantity of $Al_2(SO_4)_3$ added at same electrolyte concentration and current density.

• Journal of the Korean Magnetics Society
• /
• v.23 no.2
• /
• pp.49-53
• /
• 2013

A current sensor is one of important component which is used for the electrical current measurement during charge and discharge of the battery, and monitoring system of the motor controller in the electric and hybrid vehicle. In this study, we have developed an open loop type current sensor using GaAs Hall sensor and magnetic core has an air gap. The Hall sensor detect magnetic field produced by the current to be measured. The 3 mm air gap core was made by HGO electrical steel sheets after slitting, winding, annealing, molding, and cutting. Developed current sensor shows 0.03 % linearity within DC current range from -400 A to +400 A. Operating temperature range was extended to the range of $-40{\sim}105^{\circ}C$ using temperature compensating electronic circuit. To Improve frequency bandwidth limit due to the air flux of PCB (Printed Circuit Board) and Hall sensor, We employed an air flux compensating loop near Hall sensor or on PCB. Frequency bandwidth of the sensor was 100 kHz when we applied sine wave current of $40A{\cdot}turn$ in the frequency range from 100 Hz to 100 kHz. For the dynamic response time measurement, 5 kHz square wave current of $40A{\cdot}turn$ was applied to the sensor. Response time was calculated time reach to 90 % of saturation value and smaller than $2{\mu}s$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.229-229
• /
• 1999

교류형 플라즈마 방전 표시기(AC Plasma Display Panel, AC PDP)의 구동에서의 방전 현상은 기입방전, 유지방전, 소거 방전이 있다. 이중 유지 방전은 표시장치로서의 휘도와 계조의 표현을 위한 방전으로 표시기로서의 효율을 결정하게 된다. 본 연구에서는 유지 방전 전압의 상승 시간의 변화에 따른 방전현상과 휘도, 효율의 변화를 살펴 보았다. 방전 현상에서의 가장 큰 변화는 교류형 플라즈마 방전 표시기의 방전 개시 전압과 방전 유지 전압의 변화이다. 유지 전압의 상승시간이 증가할수록 방전 개시 전압과 방전 유지 전압의 변화이다. 유지 전압의 상승 시간이 증가할수록 방전 개시 전압과 방전 유지 전압의 차(sustain margin)는 감소하여 상승 시간이 1$\mu$s/100V 이상의 영역에서는 방전 개시 전압과 방전 유지 전압이 차이가 없어지게 된다. 이는 방전 유지 전극 위의 유전체에 쌓이게 되는 벽전하(wall charge) 양의 감소에 의한 방전 약화의 영향을 보여질 수 있다. 그러나 방전 유지 전압의 형태와 전류의 시간적인 변화를 살펴보면 이러한 약한 방전은 벽전하의 감소에 의한 방전 시의 전계 감소보다는 방전 전류의 발생 시간이 방전 전압이 증가하여 최고점에 이르지 못한 시간에 위치하여 방전이 형성될 때의 전계가 강하지 못하기 때문인 것을 알 수 있다. 방전 전류를 측정한 결과에 의하면 방전 전류의 시작은 변위 전류가 흐르고 난 후부터 시작되며 그 결과 방전 전류가 최고점에 도달하는 시간은 방전 전압 상승 시간이 길어질수록 낮은 전압에서 형성되게 된다. 또한 방전 유지 전압의 상승 시간이 길어질수록 플라즈마 방전표시기의 휘도와 효율은 낮아지고 이 결과 또한 약한 전계에서의 방전에 의한 결과로 생각되어진다.플라즈마의 강도값을 입력하여 플라즈마의 radiation을 검출하고, 스퍼터링 공정중 실질적인 in-situ 정보로 이용하였다. PEM을 통하여 In/Sn의 플라즈마 강도변화를 조사하였다. 초기 In/Sn의 플라즈마 강도(intensity)는 강도를 100하여, 산소를 주입한 결과, plasma intensity가 35 줄어들었고, 이때 우수한 ITO 박막을 얻을 수 있었다. Pulsed DC power를 사용하여 아크 현상을 방지하였다. PET 상에 coating 된 ITO 박막의 표면저항과 광투과도는 4-point prove와 spectrophotometer를 이용하여 분석하였고, AES로 박막의 두께에 따른 성분비를 확인하였다. ITO 박막의 광투과도는 산소의 유량과 sputter 된 In/Sn ion의 plasma emission peak에 따라 72%-92%까지 변화하였으며, 저항은 37$\Omega$/$\square$ 이상을 나타내었다. 박막의 Sn/In atomic ratio는 0.12, O/In의 비율은 In2O3의 화학양론적 비율인 1.5보다 작은 1.3을 나타내었다.로 보인다.하면 수평축과 수직축의 분산 장벽의 비에 따라 cluster의 두께비가 달라지는 성장을 볼 수 있었고, 한 축 방향으로의 팔 넓이는 fcc(100) 표면의 경우 동일한 Ed+Ep값에 대응하는 팔 넓이와 거의 동일한 결과가 나타나는 것을 볼 수 있다. 따라서 이러한 비대칭적인 모양을 가지는 성장의 경우도 cluster 밀도, cluster 모양, cluster의 양 축 방향 길이 비, 양 축 방향의 평균 팔 넓이로부터 각 축 방향의 분산 장벽을 얻어낼 수 있을 것으로 보인다. 기대할 수 있는 여러 장점들을 보고하고자 한다.성이 우수한 시