• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.4
• /
• pp.506-510
• /
• 2016

A triple-band (TB) oscillator was implemented in the TSMC $0.18{\mu}m$ 1P6M CMOS process, and it uses a cross-coupled nMOS pair and two shunt $4^{th}$ order LC resonators to form a $6^{th}$ order resonator with three resonant frequencies. The oscillator uses the varactors for band switching and frequency tuning. The core current and power consumption of the high (middle, low)- band core oscillator are 3.59(3.42, 3.4) mA and 2.4(2.29, 2.28) mW, respectively at the dc drain-source bias of 0.67V. The oscillator can generate differential signals in the frequency range of 8.04-8.68 GHz, 5.82-6.15 GHz, and 3.68-4.08 GHz. The die area of the triple-band oscillator is $0.835{\times}1.103mm^2$.

• Journal of Power Electronics
• /
• v.6 no.1
• /
• pp.73-82
• /
• 2006

Plasma display panels (PDPs) have a serious thermal problem, because the luminance efficiency of a conventional PDP is about 1.5 1m/W and it is less than $3\~5\;lm/W$ of a cathode ray tube (CRT). Thus there is a need for improving the luminance efficiency of the PDP. There are several approaches to improve the luminance efficiency of the PDP and we adopted a driving PDP at high frequency range from 400kHz up to over 700kHz. Since a PDP is regarded as an equivalent inherent capacitance, many types of sustaining drivers have been proposed and widely used to recover the energy stored in the PDP. However, these circuits have some drawbacks for driving PDPs at high frequency ranges. In this paper, we investigate the effect of the parasitic components on the PDP itself and on the driver when the reactive energy of the panel is recovered. Various drivers are classified and evaluated based on their suitability for high frequency drivers. Finally, a current-fed driver with a DC input voltage bias is proposed. This driver overcomes the effect of parasitic components in the panel and driver. It fully achieves a ZVS of all full-bridge switches and reduces the transition time of the panel polarity. It is tested to validate the high frequency sustaining driver and the experimental results are presented.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 2003.10a
• /
• pp.127-130
• /
• 2003

An RSFQ (Rapid Single Flux Quantum) counter can be used as a frequency divider that was an essential part of a programmable voltage standard chip. The voltage standard chip is composed of two circuit parts, a counter and an antenna Analog signal of tens to hundreds ㎓ may be applied to a finline antenna part. This analog signal can be converted to the stream of SFQ voltage pulses by a DC/SFQ circuit. The number of voltage pulses can be reduced by 2n times when they pass through a counter that is composed of n T Flip-Flops (Toggle Flip-Flop). Such a counter can be used not only as a frequency divider, but also to build a programmable voltage standard chip. So, its application range can be telecommunication, high speed RAM, microprocessor, etc. In this work, we have used Xic, WRspice, and L-meter to design an RSFQ counter. After circuit optimization, we could obtain the bias current margins of the T Flip-Flop circuit to be above 31％ Our RSFQ counter circuit designs were based on the 1 ㎄/$\textrm{cm}^2$ niobium trilayer technology.

• Journal of the Optical Society of Korea
• /
• v.16 no.3
• /
• pp.313-317
• /
• 2012

We have evaluated a 1.3 ${\mu}m$ vertical-cavity surface-emitting laser (VCSEL), whose bottom mirror and central active layer were grown by metal organic chemical vapor deposition (MOCVD) and whose top mirror was covered with a dielectric coating, for 10 Gb/s data transmission over single-mode fibers (SMFs). Successful demonstration of error-free transmission of the directly modulated VCSEL signals at data rate of 10 Gb/s over a 10 km-long SMF was achieved for operating temperatures from $20^{\circ}C$ to $60^{\circ}C$ up to bit-error-rate (BER) of $10^{-12}$. The DC bias current and modulation currents are only 7 mA and 6 mA, respectively. The results indicate that the VCSEL is a good low-power consuming optical signal source for 10 GBASE Ethernet applications under controlled environments.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.12 no.3
• /
• pp.234-240
• /
• 2007

In this paper, a novel multi-level inverter for low cost high speed switched reluctance(SR) drive is proposed. The proposed multi-level converter has reduced number of power switches and diodes than that of a conventional asymmetric converter for SRM and smaller voltage rating of the dump capacitor comparing with energy efficient c-dump converter. It can supply five operating modes that is boosted, DC-link, zero, negative bias and negative boosted voltage. The proposed multi-level converter has fast excitation and demagnetization modes of phase current, so dynamic response can be achieved. The proposed multi-level converter is verified by computer simulation and experimental results.

• Journal of the Korean Magnetics Society
• /
• v.12 no.6
• /
• pp.218-223
• /
• 2002

We investigated the magnetic properties of High Flux-type $Ni_{x}Fe_{100-x}$(x=40∼50, wt.％) permalloy powders and dust cores. The powder was prepared by conventional gas atomization in mass production scale. At the composition of $Ni_{x}Fe_{55}$, saturation magnetization was maximum. In case of lower Ni content than X=45, the $M_{s}$, decreased largely with the decrease in Ni content, which is due to the invar effect. The permeability of compressed powder cores increased with the decrease in Ni content, which was considered to be due to the decrease in the magnetostriction. In addition, the dust core with Ni=45％ showed the lowest core loss because of the increase in electrical resistivity leading to the low eddy current loss. From the better frequency dependence of permeability, larger Q value and superior DC bias characteristics of Ni=45％ than those of Ni=50％ core, it was confirmed that the 45％Ni-55％Fe powder alloy was better material for the dust core than commercial High Flux core materials.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.12 no.6
• /
• pp.619-628
• /
• 2019

In this paper, we designed a beta ray sensor for a true random number generator. Instead of biasing the gate of the PMOS feedback transistor to a DC voltage, the current flowing through the PMOS feedback transistor is mirrored through a current bias circuit designed to be insensitive to PVT fluctuations, thereby minimizing fluctuations in the signal voltage of the CSA. In addition, by using the constant current supplied by the BGR (Bandgap Reference) circuit, the signal voltage is charged to the VCOM voltage level, thereby reducing the change in charge time to enable high-speed sensing. The beta ray sensor designed with 0.18㎛ CMOS process shows that the minimum signal voltage and maximum signal voltage of the CSA circuit which are resulted from corner simulation are 205mV and 303mV, respectively. and the minimum and maximum widths of the pulses generated by comparing the output signal through the pulse shaper with the threshold voltage (VTHR) voltage of the comparator, were 0.592㎲ and 1.247㎲, respectively. resulting in high-speed detection of 100kHz. Thus, it is designed to count up to 100 kilo pulses per second.

• Journal of the Korean Magnetics Society
• /
• v.10 no.5
• /
• pp.196-202
• /
• 2000

Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P1)/Ru/CoFe(P2)/FeMn/Ta on Si(100) substrate with natural oxide were prepared by dc magnetron sputtering system, and investigated on the magnetoresistance properties and effective exchange bias field. As the thickness of FeMn increased above 150 $\AA$, MR ratio was decreased due to the current shunting effect. As the thickness of free layer decreased below 40$\AA$, MR ratio was reduced rapidly. In case of 40 $\AA$ thick of free layer, spin valve film with a structure Si(100)/Ta(50 $\AA$)/NiFe(27 $\AA$)/CoFe(13 $\AA$)/Cu(26 $\AA$)/CoFe(30 $\AA$)/Ru(7 $\AA$)/CoFe(15 $\AA$)/FeMn(100 $\AA$)/Ta(50 $\AA$) exhibited maximum MR ratio of 7.5 % and an effective exchange bias field of 600 Oe, respectively. Thickness difference dependence in this synthetic spin valve structure on effective exchange field was investigated and interpreted by the analytical method. It should be noted that thickness increase of CoFe(P 1) and decrease of CoFe(P2) in synthetic antiferromagnet leaded to the decrease in effective exchange bias field by experimentally and analytically.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.53 no.7
• /
• pp.138-143
• /
• 2016

The designed and fabricated millimeter-wave security screening system receives radiation energy from an object and a human body. The imaging system consist of sixteen array antennas, sixteen four-stage LNAs, sixteen detectors, an infrared camera, a CCD camera, reflector, and a focusing lens. This system requires high sensitivity and wide bandwidth to detect the input thermal noise. The LNA module of the system has been measured to have 65.8 dB in average linear gain and 82 GHz~102 GHz in bandwidth to enhance the sensitivity for thermal noise, and to receive it over a wide bandwidth. The detector is used for direct current (DC) output translation of millimeter-wave signals with a zero bias Schottky diode. The lens and front-end of the millimeter-wave sensor are important in the system to detect the input thermal noise signal. The frequency range in the receiving sensitivity of the detectors was 350 to 400 mV/mW at 0 dBm (1 mW) input power. The developed W-band imaging system is effective for detecting and identifying concealed objects such as metal or plastic.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.135-135
• /
• 1999

It is well known that Raman spectroscopy is powerful tool in analysis of sp3/sp3 bonding fraction in diamond-like carbon(DLC) films. Raman spectra of DLC film is composed of D-peak centered at 1350cm-1 and G-peak centered at 1530cm-1. The sp3/sp3 fraction is qualitatively acquired by deconvolution method. However, in case of DLC film, it is generally observed that G-peak position shifts toward low wavenumber as th sp3 fraction increases. However, opposite results were frequently observed in ta-C films. ta-C film has much higher residual compressive stress due to its high sp3 fraction compared to the DLC films deposited by CVD method. Effect of residual stress on G-peak position is most recommendable parameter in Raman analysis of ta-C, due to its smallest fitting error among many parameters acquired by peak deconvolution of symmetric spectra. In current study, the effect of residual stress on Raman spectra was quantitatively evaluated by free-hang method. ta-C films of different residual stress were deposited on Si-wafer by modifying DC-bias voltage during deposition. The variation of the G-peak position along the etching depth were observed in the free-hangs of 20~30${\mu}{\textrm}{m}$ etching depth. Mathematical result based on Airy stress function, was compared with experimental results. The more reliable analysis excluding stress-induced shift was possible by elimination of the Raman shift due to residual compressiove stress.