• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.146-149
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• 2016

The CrN/TiN/Al thin films for solar selective absorber were prepared by dc reactive magnetron sputtering with multi targets. The binary nitride CrN layer deposited with change in N₂ gas flow rates. The gas mixture of Ar and N2 was an important parameter during sputtering deposition because the metal volume fraction (MVF) was controlled by the N2 gas flow rate. In this study, the crystallinity and surface properties of the CrN/TiN/Al thin films were estimated by X-ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The composition and depth profile of thin films were investigated using Auger electron spectroscopy (AES). The absorptance and reflectance with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 300~1,100 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.345.2-345.2
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• 2016

Alumina (Al2O3) doped zinc oxide (ZnO) films (AZO) have been prepared from 2 wt.% Al2O3 doped ZnO target by DC magnetron sputtering at a 2 mTorr (0.27 Pa) chamber pressure in (15 sccm) argon ambient. We obtained films of various opto-electronic properties by variation of target angle from 32.5o to 72.5o. At lower target angle deposited films show higher values in optical gap, mobility of charge carrier, carrier concentration, crystallite grain size, transmission range of wavelength, which are favorable characteristics of AZO as a transparent conducting oxide (TCO). At higher target angle the sheet resistance, work function, surface roughness for the AZO films increases. Measured haze ratio of the films changed lower to higher and size of characteristic surface structure of as deposited film ranges from ~40 nm to ~300 nm. By a combination of low and high target angle we obtained a textured TCO film with high conductivity.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.467-470
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• 2004

Diamond-Like Carbon (DLC) thin film is a semiconductor with high mechanical hardness, low friction coefficient, high chemical inertness, and optical transparency. DLC thin films have widespread applications as protective coatings and solid lubricant coatings in areas such as Hard Disk Drive (HDD) and Micro-Electro-Mechanical-Systems (MEMS). In this work, the wear characteristics of DLC thin films deposited on silicon substrates using a DC-magnetron sputtering system were analyzed. The wear tracks were measured with an Atomic Force Microscope (AFM). To identify the sp2 and sp3 hybridization of carbon bonds and other bonds Raman spectroscopy was used. The structural information of DLC thin films was obtained with Fourier transform infrared spectroscopy and wear tests were conducted by using a micro-pin-on-reciprocator tester. Results showed that the wear characteristics were dependent on the sputtering conditions. The wear rate could be correlated with the bonding state of the DLC thin film.

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.89-92
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• 2007

$CuInSe_2$ thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from $200\;^{\circ}C$ to $350\;^{\circ}C$ at intervals of $50\;^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.86-90
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• 2008

$CuInSe_2$ thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from $200^{\circ}C$ to $350^{\circ}C$ at intervals of $50^{\circ}C$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.854-859
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• 2016

Recently, GeSn is drawing great deal of interests as one of the candidates for group-IV-driven optical interconnect for integration with the Si complementary metal-oxide-semiconductor (CMOS) owing to its pseudo-direct band structure and high electron and hole mobilities. However, the large lattice mismatch between GeSn and Si as well as the Sn segregation have been considered to be issues in preparing GeSn on Si. In this work, we deposit the GeSn films on Si by DC magnetron sputtering at a low temperature of $250^{\circ}C$ and characterize the thin films. To reduce the stresses by GeSn onto Si, Ge buffer deposited under different processing conditions were inserted between Si and GeSn. As the result, polycrystalline GeSn domains with Sn atomic fraction of 6.51% on Si were successfully obtained and it has been demonstrated that the Ge buffer layer deposited at a higher sputtering power can relax the stress induced by the large lattice mismatch between Si substrate and GeSn thin films.

• Journal of the Korean institute of surface engineering
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• v.44 no.6
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• pp.250-254
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• 2011

NiO-AZO films were deposited on glass substrate by DC and RF magnetron co-sputtering system in pure $O_2$ gas without substrate heating during deposition. In order to control the chemical composition of the film, NiO target was supplied with constant RF power of 150 W and AZO target (doped with 2.98 at% aluminum) with DC power varied between 40 W to 80 W. Deposited NiO-AZO films were evaluated by structural and chemical analysis. With introducing AZO, XRD and XPS data reveal that NiO were supplied with more oxygen. these results could be strongly affected by the higher bond enthalpy of NiO compared to ZnO, which makes it possible for NiO to obtain excessive oxygen from ZnO.

• Current Photovoltaic Research
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• v.1 no.2
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• pp.97-102
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• 2013

Aluminum-doped zinc oxide (AZO) thin films were prepared by dc magnetron sputtering at room temperature and the effect of heat treatment on the structural, electrical and optical properties of the films were examined. As the annealing temperature and time increased, the resistivity decreased and the transmittance improved. All AZO films had c-axis oriented (002) plane of ZnO, regardless of the annealing process employed. As the annealing temperature and time increased, the crystallinity of AZO thin films increased due to the formation of a new ZnO phase in which Al was substituted for Zn. However, at the high annealing temperature of $400^{\circ}C$, the resistivity of the films increased via separation of Zn and Al from ZnO phase due to their low melting points. X-ray diffraction, field emission scanning electron micrograph and Hall effect measurement confirmed the formation of uniformly distributed new grains of ZnO substituted with Al. The variation of Al contents in AZO films was shown to be the primary factor for the changes in resistivity and carrier concentration of the films.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.141-150
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• 2002

Titanium oxide thin films were deposited by DC reactive magnetron sputtering(RMS) with Ar ion-beam assistance using end-Hall ion source at low oxygen partial pressure and long target-to-substrate distance. The optical and structural properties of deposited films were investigated by the measurement of measured transmittance and reflectance, atomic force microscope(AFM), and X-ray diffraction(XRD). The results show that the Ax ion-beam assisted RMS for titanium oxide thin films induces the higher packing density, lower absorption, and smoother surface than the conventional RMS, suggesting that it can be employed in deposition of optical dielectric coatings.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.109-109
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• 2000

AC형 PDP에서 보호막은 방전시 내구성(내 sputter)이 약한 유전체를 보호함으로써 panel이 장시간동안 안정된 동작을 하게 하며, 방전시 2차 전자를 많이 방출함으로써 방전전압을 낮추는 기능을 갖는다. 또한 패널의 전압특성을 결정하고 수명을 크게 좌우하며 방전전극을 플라즈마 발광에 의한 이온 스퍼터로부터 보호하고 벽전하에 의한 메모리 기능을 가지도록 하는 역할도 하는 것으로 알려져 있다. 일반적으로 보호막의 재료로는 MgO, ZrO, CeO2등이 있으며 특히 MgO는 보호막으로 널리 쓰이고 있다. 일반적으로 MgO의 증착방법의 전자빔 증착, 스퍼터링, 이온 플레이팅법이 있으며 많은 연구자들이 이러한 증착방법에 성장된 박막들을 연구하고 있다. 그러나 Cs을 이용한 MgO의 증착방법은 그리 널리 알려져 있지는 않다. 따라서 본 연구에서는 Ar/O2/Cs을 이용하여 MgO박막을 sputtering 방법으로 증착하였으며 이들의 특성에 관하여 연구하였다. Target으로는 Mg을 사용하였으며 DC sputtering법으로 MgO를 증착하였다. 기판으로는 실리콘과 유리를 이용하였으며 가스로는 Ar과 O2를 이용하고 Cs의 첨가 유무에 따라 증착하였다. 또한 입력 전력, 공정압력, 그리고 O2 가스량에 따라 박막을 증착하였으며 이에 따른 증착속도, 결정성, 조성비를 $\alpha$-step, XRD, 그리고 XPS를 이용하여 측정하였다. CS 참가할 경우 Ar/O2 가스만을 이용하여 증착했을 때보다 증착속도는 증가하였으며 XRD 분석시 (111), (200) 방향으로 우선 성장하는 것을 관찰할 수 있었다.