• Title/Summary/Keyword: DC Magnetron Sputtering

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Split sputter mode: a novel sputtering method for flat-panel display manufacturing

  • Pieralisi, Fabio;Hanika, Markus;Scheer, Evelyn;Bender, Marcus
    • Journal of Information Display
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    • v.12 no.2
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    • pp.89-92
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    • 2011
  • Advanced static DC magnetron sputtering methods based on the magnet wobbling technique were investigated to achieve highly uniform and homogeneous metallization layers. The novel split sputter mode (SSM) method, wherein the deposition process is divided into two distinct steps, enables the AKT rotary cathode technology to provide excellent layer properties, while keeping a high production throughput. The effectiveness of theSSMtechnique was demonstrated through copper-coated large-area substrates.

Fabrication of Al-doped ZnO Thin Films by Vertical In-line DC Magnetron Sputtering

  • Heo, Gi-Seok;Kim, Tae-Won;Lee, Jong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.04c
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    • pp.41-41
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    • 2008
  • Al-doped ZnO (AZO) thin films have been fabricated by vertical in-line dc magnetron sputtering for transparent conducting oxides (TCOs) applications. The effects of substrate temperature and dc power on the characteristics of AZO thin films are investigated and also optimized the process conditions to get the best electrical and optical properties. The fabricated thin films show a good electrical and optical uniformity within ${\pm}5%$ over the whole area of substrate ($200mm\;{\times}\;200mm$) ; the minimum resistivity of $8\;{\times}\;10^{-4}\;{\Omega}cm$ and the average transmittance of 90% within the visible wavelength range. We have found that the band gap ($E_g$) increases with increasing substrate temperature and dc power, whereas the crystallinity is getting improved with increasing substrate temperature. The binding energy of Zn $2p_{3/2}$ and O 1s is observed to decrease as the substrate temperature increases.

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Effects of Reactive Gas Addition on the Mechanical Property and Water Permeability of IZO Films Deposited by DC Sputtering for Application to Flexible OLED (DC 마그네트론 스퍼터로 증착한 flexible OLED용 IZO 박막의 기계적 특성과 투습특성에 미치는 반응성 가스 첨가의 효과)

  • Cheon, Ko-Eun;Lee, Dong-Yeop;Cho, Young-Rae;Song, Pung-Keun
    • Journal of Surface Science and Engineering
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    • v.40 no.6
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    • pp.245-249
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    • 2007
  • Amorphous IZO films were deposited on PET substrate by DC magnetron sputtering without substrate heating. In order to investigate effect of reactive gas addition on film properties, 0.2-0.4% of $H_2$ or $O_2$ gas was introduced during the deposition. Deposited IZO films were evaluated with mechanical property, electrical property, and water permeability. In the case of $H_2$ gas addition, mechanical property showed clear degradation compared to $O_2$ gas. In the case of $O_2$ gas, water permeability of the IZO film was increased compared to $H_2$ gas which could be attributed to the low adhesion of the film caused by bombardment of high energy negative oxygen ion. As a result, it is confirmed that water permeability of the film could be strongly affected by adhesion of the film.

A Study on Design of Magnetic Thin Film Inductors for DC-DC Converter Applications (DC-DC Converter용 자성박막 인덕터 설계에 관한 연구)

  • 윤의중;김좌연;박노경;김상기;김종대
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.1
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    • pp.74-83
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    • 2001
  • In this study, the optimum structure of a magnetic thin film inductor was designed for application of DC-DC converters. The Ni$\sub$81/Fe$\sub$19/ (at%) alloy was selected as a high-frequency($\geq$MHz) magnetic thin film magnetron sputtering system. As-deposited NiFe thin films show similar magnetic properties compared to bulk NiFe alloys, indicating that they have a good film quality. The optimum design of dolenoid-type magnetic thin film inductors was performed utilizing a Maxwell computer simulator (Ansoftt HFSS V7.0 for PC) and parameters obtained from the magnetic properties of magnetic core materials selected. The high-frequency characteristics of the inductance(L) and quality factor(Q) obtained for the designed inductors through simulation agreed well with those obtained by theoretical calculations, confirming that the simulated result is realistic. The optimum structure of high-performance (Q$\geq$60, L = 1${\mu}$H, efficiency $\geq$90%), high-frequency ($\geq$5MHz), and solenoid-type magnetic thin film inductors was designed successfully.

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DC Pulsed Magnetron Sputtering 법으로 제조된 B-C 박막과 B-C/DLC 다층막의 물성에 관한 연구

  • Kim, Gang-Sam;Jo, Yong-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.311-311
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    • 2012
  • Boron carbide (B-C) 박막은 높은 경도, 열적 안전성, 화학적 안전성이 우수한 하드 코팅 소재로 사용되고 있다. 우수한 특성을 가지는 B-C 박막에 대한 연구는 B4C 비전도성 타겟을 이용하여 RF Sputtering 법으로 증착 공정변수에 대해서 박막의 물성에 관해 일부 연구자들이 진행하였으나, Pulsed dc margnetron sputtering 법으로 증착 공정변수에 대한 물성의 연구는 미진하였다. 반면에, DLC 박막은 우수한 특성을 가지는 하드 코팅 소재이나 400도 이상에서는 내열성이 떨어지는 단점을 가지고 있다. 연구에서는 B-C 박막의 내열성이 우수한 특성을 이용하여 DLC 박막의 내열성을 높이기 위한 목적으로 B-C 박막과 DLC 박막을 다층막으로 제조함으로서 DLC 박막을 구조적으로 안정화를 시키고자 하였다. 그리고 비전도성 B4C 타겟으로 Pulsed dc 마그네트론 스퍼터링법을 이용하여 증착기술을 개발하기 위해서 공정압력과 인가전력에 따른 B-C 박막을 제조하여 그 물성을 조사하였고, B-C/DLC 다층막을 제조하여 DLC 박막의 내열성을 증가시키고자 하였다. B-C 박막과 B-C/DLC 다층막의 경도와 탄성율은 나노인덴테이션과 마이크로 비커스를 이용하였으며, 박막의 성장구조와 박막의 구조를 조사하기 위해 SEM과 FTIR 및 XRD 을 이용하여 측정하였다.

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A Study on Photocatalytic Degradation Properties by Oxygen Partial Pressure for Tio2Thin Films Fabricated by DC Magnetron Sputtering (DC 마그네트론 스퍼터링법으로 제조된 Tio2 박막의 산소분압비에 따른 광분해 특성에 관한 연구)

  • Jeong, W.J.;Park, J.Y.;Park, G.C.
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.3
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    • pp.226-230
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    • 2005
  • This paper describes the photocatalytic degradation properties by oxygen partial pressure for TiO$_2$ thin films fabricated by dc magnetron reactive sputtering. And the structural, chemical, optical and photocatalytic properties were investigated at various analysis system. When TiO$_2$ thin film was made at deposition time of 120 min and Ar:O$_2$ ratio of 60:40, the best properties were obtained. That results were as follows: thickness; 360∼370 nm, gram size; 40 nm, optical energy band gap; 3.4 eV and Benzene conversion in the photocatalytic degradation; 11 %.

Process condition and color change of coatings by dc magnetron sputtering (DC magnetron sputtering을 이용한 착색 코팅의 색상변화와 공정조건에 대한 연구)

  • Song, Yeong-Sik;Gang, Yeong-Hun;Kim, Jong-Ryeol
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2008.11a
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    • pp.53-53
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    • 2008
  • 기존의 Al 합금 소재의 단점을 보완한 Al-Mg 합금 소재를 이용해 다이캐스팅으로 만들어진 핸드폰 케이스에 적용하고자 titanium 타겟을 사용한 반응성 스퍼터링 공정을 연구하였다. 코팅특성은 스펙트로포토 미터를 이용하여 색상분석을 하였고, 미세표면이미지는 FE-SEM을 이용하였다. DC 마그네트론 스퍼터링에 의한 착색코팅은 산소유량이 많은 경우 밝기 L*값이 더 커졌다. 색상의 편차와 재현성을 나타내주는 ${\Delta}E^*ab$ 값을 비교해보면, 모든 경우 ${\Delta}E^*ab^*$<1로 매우 우수한 색상균일성을 보여준다. FE-SEM에 의한 표면이미지는 전반적으로 산소유량이 많은 0.8SCCM에서 코팅한 경우보다 산소유량이 적은 0.375SCCM에서 코팅한 경우가 결정립계의 구별이 확실하고 결정립 모양이 선명하고 결정립크기도 증가함을 확인할 수 있다.

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Electrical and optical properties in relation to Ga concentration of GZO films deposited by DC magnetron sputtering (DC 마그네트론 스퍼터링법으로 증착한 GZO 박막의 Ga 함량에 따른 전기적 및 광학적 특성)

  • Lee, Jeong-Cheol;Park, Sang-Eun;Lee, Jin-Ho;Song, Pung-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2007.11a
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    • pp.95-96
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    • 2007
  • DC magnetron sputtering 법으로 다양한 $Ga_2O_3$함량비( $2.27{\sim}$ 10.81 wt%)를 가진 고밀도 GZO 소결타겟을 사용하여 GZO박막을 증착한 후 도핑농도에 따른 광학적 특성과 전기적 특성을 조사하였다. GZO($Ga_2O_3$: 6.65 wt%)타겟을 사용하여 기판온도 $300^{\circ}C$에서 증착한 GZO박막은 상대적으로 낮은 비저항($5.1{\times}10^{-4}$ ${\Omega}cm$)과 85% 이상의 높은 투과율을 보였다. 또한 타겟의 $Ga_2O_3$함량이 6.65 wt%일때 광학적 밴드갭 에너지는 3.61 eV로 비교적 큰 흡수계수의 변화를 보였으며 그 이상의 $Ga_2O_3$농도에서는 밴드갭 에너지가 감소하는 경향을 보였다.

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Effect of annealing on the electrical and optical properties of ZTO/GZO double-layered TCO films deposited by DC, RF magnetron co-sputtering (DC, RF 마그네트론 코스퍼터링법으로 증착한 ZTO/GZO 투명전도성막의 열처리 조건이 박막의 물성에 미치는 영향)

  • Kim, Min-Je;Song, Pung-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.05a
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    • pp.207-208
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    • 2012
  • GZO( Ga-doped ZnO) 및 ZTO (zinc tin Oxide) 박막을 DC, RF magnetron sputtering 공정을 이용하여 증착한 후, 대기 및 진공상태에서 200, $300^{\circ}C$ 조건으로 30분 동안 열처리하였다. ZTO/GZO 박막의 전기적 특성은 ZTO 층과 GZO 층의 두께 비에 의존함을 확인 할 수 있었다. 본 연구에서는 GZO단일 박막과 ZTO/GZO double layer 박막의 열처리 온도에 따른 구조적, 전기적, 광학적 특성을 비교검토 하였다.

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Characterizations of Ti-Al-V-N Films Deposited by DC and RF Reactive Magnetron Sputtering (직류 및 고주파 마그네트론 스퍼터링법으로 증착한 Ti-Al-V-N 박막의 특성)

  • Sohn, Yong-Un;Chung, In-Wha;Lee, Young-Ki
    • Journal of the Korean Society for Heat Treatment
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    • v.13 no.6
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    • pp.398-404
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    • 2000
  • The Ti-Al-V-N films have been deposited on various substrates by d.c and r.f reactive magnetron sputtering from a Ti-6Al-4V alloy target in mixed $Ar-N_2$ discharges. The films were investigated by means of XRD, AES, SEM/EDX, microhardness, TG and scratch test. The XRD and SEM results indicated that the films were of single B1 NaCl phase having dense columnar structure with the (111) preferred orientation. The composition of Ti-Al-V-N film was the Ti-7.1Al-4.3V-N(wt%) films. Adhesion and microhardness of Ti-Al-V-N films deposited by r.f magnetron sputtering method were better than those deposited by d.c magnetron sputtering method. The anti-oxidation properties of Ti-Al-V-N films were also superior to that of Ti-N film deposited by the same deposition conditions.

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