• 한국전기전자재료학회논문지
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• 제31권2호
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• pp.90-93
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• 2018

This aim of this study was to develop a process for creating bulk single-crystal YBaCuO superconductors in a high magnetic field. To support the bulk unidirectional growth of $YBa_2Cu_3O_{7-y}$, $SmBa_2Cu_3O_{7-y}$ seeds were planted inside YBaCuO composites and samples were produced by melting, enabling the growth of two YBaCuO superconductors. Due to the magnetism generated inside the superconductor of the upper sample, the magnetization inside the superconducting single crystals was evenly distributed, the sharpness of the induced magnetic force was improved, and the superconducting magnetization were significantly improved. This approach is widely applicable for the production of superconducting wires and current leads used for DC power breakers.

• Journal of Korean Vacuum Science & Technology
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• 제6권1호
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• pp.43-45
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• 2002

We have theoretically investigated steady-state carrier transport and current self-oscillation in negative-effective-mass (NEM) p$\^$+/pp$\^$+/diodes. The current self-oscillation here is a result of the formation and traveling of electric field domains in the p base having a NEM. The dependence of self-oscillating frequency on the applied dc voltage is obtained by detailed numerical simulations. In the calculations, we have considered the scatterings by carrier-impurity, carrier-acoustic phonon, carrier-polar-phonon, and carrier-nonpolar-phonon-hole interactions . This kind of NEM oscillator allows us to reach a current oscillation with terahertz frequency, thus it may be used as a broadband source of terahertz radiation.

• 한국세라믹학회지
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• 제36권9호
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• pp.923-929
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• 1999

The cause of optical nonlinearity induced in thermally poled silica glass is believed to be the space charge polarization. Since the second order optical nonlinearity (electro-optic effect) can be used in optical switches the optical nonlinearity in silica glass has drawn a large attention. Space charge polarization occurs when an ionic conducting material is subjected to dc electric field by the blocking electrode. Thermal poling performed to induce the optical nonlinearity in silica glass is basically identical to the process generating space charge polarization. As a first step to understand the mechanism of space charge polarization in silica glass hence the induced optical nonlinearity the absorption currents as functions of time were measured for various types of silica glasses and analyzed by the theory of space charge polarization. It was found that the electrical relaxation exhibited a step by the space charge polarization in the relatively long time range and dielectric loss peak showed a maximum at a specific temperature which is depending on type of silica glass. It was turned out that this relaxation might be a cause of nonlinearity in electrical conductivity of silica glass.

• 한국세라믹학회지
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• 제33권6호
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• pp.672-678
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• 1996

The relationship between domain switching and acoustic emission (AE) during poling was investigated using the tetragonal ferroelectric ceramics with composition of (Pb,La)TiO3+0.01MnO2 The amount of AE generation during poling increased with increasing dc electric field and raising temperature. It was confirmed that the change of the amount of AE generation with poling condition resulted from the difference of the amount of 90$^{\circ}$ domain switching and total amount of AE generation for 10 minutes was approximately proportional to the amount of 90$^{\circ}$domain switching. The A generations of two specimens which have different tetragonality rations(c/s rations) 15 at% and 24at% La-doped were also investigated. The sample with c/a ratio of 1.012 where 90$^{\circ}$ domains are dominate had larger amount of AE generation and 90$^{\circ}$ domain switching compared with the sample with c/a ratio of 1.004 where 180$^{\circ}$ domains are dominant.

• 대한기계학회논문집A
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• 제27권6호
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• pp.849-856
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• 2003

A three-dimensional constitutive model for polarization switching in ferroelectric materials is used to predict the formation of switching zones in an atomic force microscopy(AFM) tip/ferroelectric thin film/bottom electrode system via finite element simulation. Initially the ferrolectric film is poled upward and the bottom electrode is grounded. A strong dc field is imposed on a fixed point of the top surface of the film through the AFM tip. A small switching zone with downward polarization is nucleated and grows with time. It is found that initially the shape of the switched zone is that of a bulgy dagger, but later turn to the shape of a reversed cup with the lower part wider than the upper part. It can also be concluded that the size of switching zones increases with the period of applied electric potential. The present results are qualitatively consistent with experimental observations.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 1998년도 추계학술대회 논문집
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• pp.38-43
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• 1998

Magneto Electrolytic Polishing (MEP) is a process in which metal ions are removed from a abrasive through a combination of magnetic electric current and chemical solution. The substrate is immersed into the magnetic effect, chemical solution, and DC crunt is applied. Several factors affect the rate at which the metal ions are removed from the substrate. Three of the most significant are the amount of time in which the substrate is immersed I the solution, and the amount of direct current applied in magnetic field. In this study, the surface finishing characteristics and optical finishing condition for the stainless steel were experimented upon and analyzed.

• 대한전자공학회논문지
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• 제25권7호
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• pp.780-790
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• 1988

We have studied the hot-carrier-induced degradation caused by the high channel electric field due to the decrease of the gate length of MOSFET used in VLSI. Under DC stress, the condition in which maximum substrate current occures gave the worst degradation. Under AC dynamic stress, other conditions, the pulse shape and the falling rate, gave enormous effects on the degradation phenomena, especially at 77K. Threshold voltage, transconductance, channel conductance and gate current were measured and compared under various stress conditions. The threshold voltage was almost completely recovered by hot-injection stress as a reverse-stress. But, the transconductance was rapidly degraded under hot-hole injection and recovered by sequential hot-electron stress. The Si-SiO2 interface state density was analyzed by a charge pumping technique and the charge pumping current showed the same trend as the threshold voltage shift in degradation process.

• 대한전자공학회논문지
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• 제25권9호
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• pp.1108-1114
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• 1988

Usng the P.Yeh's analytic method, we derive the condition for oscillation of a linear phase conjugate oscillator which consists of photorefractive medium and two conventional mirrors. From this general oscillation condition, we obtain the threshold oscillation conditon of a single phase conjugate resonator and the self-oscillation condition of photorefractive medium, then in special case (phase shift =90\ulcorner: no external dc electric field), oscillation conditions of the linear phase conjugate oscillator for any cavity length are derived. The results indicate that, unlike in a phase conjugate oscillator with Kerr-like medium, oscillation cannot occur at special cavity length for given couplinyg strengths.

• 한국세라믹학회지
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• 제36권12호
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• pp.1374-1380
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• 1999

The cause of Scond Harmonic Generation (SHG) in thermally poled silica glass is suggested basedon the electrical and dielectric relaxation measurements. The absorption currents as functions of time were measured for various types of silica glasses and analyzed by the theory of Space Charge Polarization. Space charge polarization occurs when an ionic conducting material is subjected to dc electric field with blocking electrode. Thermal poling performed to induce SHG in silica glass is basically identical to the process generating space charge polarization. Hence it was found that gene-ration removal reproduction and temperature dependence of SHG in poled silica is directly related to those of space charge polarization. It turned out that the fundamental parameters governing the SHG in poled silica are charge carrier concentration and mobility. Based on the theory of space charge polarization and experimental results of electrical rela-xation the method to increase the intensity of SHG is proposed.

• 전자공학회논문지A
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• 제30A권12호
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• pp.60-68
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• 1993

Thw VLSI device of submicron level trends to have a low level of reliability because of hot carriers which are caused by short channel effects and which do not appear in a long-channel MOSFET operated in 5V. In order to minimize the generation of hot carrier, much research has been made into various types of drain structures. This study has suggested CG MOSFET (Concaved Gate MOSFET) as new drain structure and compared its electrical characteristics with those of the conventional MOSFET and LDD-structured MOSFET by making use of a simulation method. These three device were assumed to be produced by the LOCOS process and a computer-based analysis(PISCES-2B simulator) was carried out to verify the hot electron-resistant behaviours of the devices. In the present simulation, the channel length of these devises was 1.0$\mu$m and their DC characteristics, such as VS1DT-IS1DT curves, gate and substrate current, potential contours, breakdown voltage and electric field were compared with one another.