• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.40 no.8
• /
• pp.572-579
• /
• 2003

By comparing the measured optical reflection spectra with calculated one by the transfer-matrix method (TMM) in epitaxial wafers for vertical-cavity surface-emitting lasers (VCSELs), we have estimated the systematic thickness errors in a simple and nondestructive way. The experimentally confirmed technique is based on the finding that the shape of the reflection spectra depends mainly on a newly defined single parameter, the effective error in the n-mirror layers, and the thickness error in the active cavity simply shifts the Fabry-Perot resonance wavelength. Also shown is that the proposed method is reliable when the relative standard deviation of the random thickness errors is less than 0.005. Because reflection spectra are routinely measured, we can easily estimate the thickness errors nondestructively with high spatial resolution.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.8
• /
• pp.45-50
• /
• 2004

The characteristics and reliability of implanted VCSELs are greatly influenced by the thickness of the semi-insulating layer made by ion implantation for the current confinement. We propose a simple and purely electrical method of estimating the optimum implant depth, and find that the implant front should be located 2-DBR periods above the 1 - λ cavity in order to obtain simultaneously the low threshold current and high reliability.

• Journal of the Optical Society of Korea
• /
• v.8 no.1
• /
• pp.13-16
• /
• 2004

A widely tunable SG-DFB (Sampled Grating Distributed Feedback) laser diode is proposed and its feasibility is confirmed through simulation. The new SG-DFB laser diode is composed of a pair of sampled gratings, some parts of which are gain sections and the other parts of which are phase control sections. It is shown that a few tens of nanometers can be tuned through the adjustment of two currents into the phase control sections. Higher output power is expected compared with a SG-DBR laser diode with similar parameters. The dynamic single mode operation is also observed in the time-domain simulation.

• Korean Journal of Optics and Photonics
• /
• v.15 no.5
• /
• pp.469-474
• /
• 2004

We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.

• Korean Journal of Optics and Photonics
• /
• v.28 no.5
• /
• pp.229-235
• /
• 2017

A widely tunable U-shaped SGDBR (Sampled Grating Distributed Bragg Reflector) laser diode is designed and analyzed by means of a time-domain simulation. The U-shaped SGDBR laser diode consists of SGDBR, active, phase, and TIR (Total Internal Reflection) mirror sections, so the coupling losses across the sections should be carefully considered. The tuning range of the designed U-shaped SGDBR laser is about 1525-1570 nm, which is confirmed by the simulation. The simulation results show that the loss in the TIR mirror region should be less than about 2 dB, and the refractive-index difference at the butt coupling between the passive and active regions should be less than 0.1, to provide the complete tuning range.

• Korean Journal of Optics and Photonics
• /
• v.17 no.6
• /
• pp.544-547
• /
• 2006

A time-domain modeling approach is used to study characteristics of a widely tunable coupled-ring reflector (CRR) laser diode(LD). The CRR consists of a bus waveguide and two coupled ring resonators coupled to the bus without resorting to distributed Bragg grating structure. The tuning range can be a few tens of nanometers with a side mode suppression ratio exceeding 35dB through the adjustment of currents into the phase control sections in the rings. The CRR laser diode has long effective cavity length compared to conventional laser diodes. Accordingly, a broad additional resonance peak in the amplitude modulation characteristics is observed between 20 to 30 GHz, implying the extension of amplitude modulation bandwidth.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.7
• /
• pp.31-36
• /
• 2004

In comparison with in-plane lasers, predicting the output power and differential quantum efficiency of Vertical-Cavity Surface-Emitting Lasers(VCSELs) is very difficult due to the distributed Bragg reflector(DBR) layers. Therefore, effective cavity model and transfer matrix method have been adapted in order to calculate the output power and differential quantum efficiency The effective cavity model is inappropriate to calculate output power and differential quantum efficiency while it is practically adequate to calculate the threshold gain and threshold current density The reason is that the effective cavity model can not take account of the absorption in GaAs stack layer right below the metal aperture. In this paper, we have compared the threshold current and differential quantum efficiency calculated by using transfer matrix method with effective cavity model and we have made a study of the validity of the effective cavity model. Finally, we have confirmed the versatility of the transfer matrix method with these studies.