• Title/Summary/Keyword: D8/17

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Study of the Kinetics and Mechanisms of Alkoxy Radical Reactions in the Gas Phase (I). Arrhenius Parameters for t-Butoxy Radical Reactions with Isobutane and Cyclohexane

  • Song, Se-Ahn;Choo, Kwang-Yul
    • Bulletin of the Korean Chemical Society
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    • v.5 no.1
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    • pp.16-21
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    • 1984
  • The relative Arrhenius parameters for t-butoxy radical decomposition (log $A_d$, $E_d$) and hydrogen abstraction of t-butoxy radical from hydrogen donor (log $A_d$, $E_d$) by competitive method were obtained as follows: for cyclohexane; log $A_a/A_d$ = -4.17 mole/l and $E_d-E_a$ = 9.01 kcal/mole, for isobutane; log $A_a/A_d$ = -5.70 mole/l and $E_e-E_a$= 11.0 kcal/mole. From the reported Arrhenius parameters for t-Butoxy radical decomposition reactions the parameters for t-Butoxy radical reactions with isobutane and cyclohexane are estimated to be log $A(l/mol{\cdot}sec)$ = 8.4, $E_a$ = 4.3 kcal/mol and $log A (l/mol{\cdot}sec)= 9.9,\;E_a$ = 6.3 kcal/mol, respectively.

A Selective Feedback LNA Using Notch Filter in $0.18{\mu}m$ CMOS (노치필터를 이용한 CMOS Selective 피드백 저잡음 증폭기)

  • Seo, Mi-Kyung;Yun, Ji-Sook;Han, Jung-Won;Tak, Ji-Young;Kim, Hye-Won;Park, Sung-Min
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.11
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    • pp.77-83
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    • 2009
  • In this paper, a selective feedback low-noise amplifier (LNA) has been realized in a $0.18{\mu}m$ CMOS technology to cover a number of wireless multi-standards. By exploiting notch filter, the SF-LNA demonstrates the measured results of the power gain (S21) of 11.5~13dB and the broadband input/output impedance matching of less than -10dB within the frequency bands of 820~960MHz and 1.5~2.5GHz, respectively. The chip dissipates 15mW from a single 1.8V supply, and occupies the area of $1.17\times1.0mm^2$.

High Conversion Gain Q-band Active Sub-harmonic Mixer Using GaAs PHEMT

  • Uhm, Won-Young;Lee, Bok-Hyung;Kim, Sung-Chan;Lee, Mun-Kyo;Sul, Woo-Suk;Yi, Sang-Yong;Kim, Yong-Hoh;Rhee, Jin-Koo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.2
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    • pp.89-95
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    • 2003
  • In this paper, we have designed and fabricated high conversion gain Q-band active sub-harmonic mixers for a receiver of millimeter wave wireless communication systems. The fabricated active sub-harmonic mixer uses 2nd harmonic signals of a low local oscillator (LO) frequency. The fabricated mixer was successfully integrated by using $0.1{\;}\mu\textrm{m}$GaAs pseudomorphic high electron mobility transistors (PHEMTs) and coplanar waveguide (CPW) structures. From the measurement, it shows that maximum conversion gain of 4.8 dB has obtained at a RF frequency of 40 GHz for 10 dBm LO power of 17.5 GHz. Conversion gain from the fabricated sub-harmonic mixer is one of the best reported thus far. And a phase noise of the 2nd harmonic was obtained -90.23 dBc/Hz at 100 kHz offset. The active sub-harmonic mixer also ensure a high degree of isolations, which are -35.8 dB from LO-to-IF and -40.5 dB from LO-to-RF, respectively, at a LO frequency of 17.5 GHz.

Design and Fabrication of 5.5GHZ SSB optical modulator with polarization reversed structure (LiINbO3 기판의 분극반전을 이용한 5.5 GHz 대역 SSB 광변조기의 설계 및 제작)

  • Jeong, W.J.;Kim, W.K.;Yang, W.S.;Lee, H.M.;Lee, H.Y.;Kwon, S.W.
    • Korean Journal of Optics and Photonics
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    • v.17 no.2
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    • pp.175-180
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    • 2006
  • A single sideband(SSB) modulator operating at 5.5 GHz was fabricated by polarization inversion techniques. The dimension of domain inversion in a $LiINbO_3$ Mach-Zehnder structure was precisely controlled so that the RF signal applied on two Mach-Zehnder arms gives rise to $90^{\circ}$ effective phase difference. The single sideband suppression was maximized by optimization of the polarization status of the optical input and by the DC bias value. The fabricated device showed the center frequency of 5.8 GHz and the maximum sideband suppression of 33dB, where the bandwidth of 15 dB sideband suppression ranged over a 2.5 GHz span. The optical phase delay could be regulated by the DC bias voltage, fur example, the enhanced optical modulation sideband was distinctively switched from the upper sideband to the lower sideband by changing the DC bias voltage from 1.9 V to -10.6 V.

Improvement of Current Path by Using Ferroelectric Material in 3D NAND Flash Memory (3D NAND Flash Memory에 Ferroelectric Material을 사용한 Current Path 개선)

  • Jihwan Lee;Jaewoo Lee;Myounggon Kang
    • Journal of IKEEE
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    • v.27 no.4
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    • pp.399-404
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    • 2023
  • In this paper, we analyzed the current path in the O/N/O (Oxide/Nitride/Oxide) structure of 3D NAND Flash memory and in the O/N/F (Oxide/Nitride/Ferroelectric) structure where the blocking oxide is replaced by a ferroelectric. In the O/N/O structure, when Vread is applied, a current path is formed on the backside of the channel due to the E-fields of neighboring cells. In contrast, the O/N/F structure exhibits a current path formed on the front side due to the polarization of the ferroelectric material, causing electrons to move toward the channel front. Additionally, we performed an examination of device characteristics considering channel thickness and channel length. The analysis results showed that the front electron current density in the O/N/F structure increased by 2.8 times compared to the O/N/O structure, and the front electron current density ratio of the O/N/F structure was 17.7% higher. Therefore, the front current path is formed more effectively in the O/N/F structure than in the O/N/O structure.

Prevalence Rates of Risk Factors of Metabolic Syndrome, and Its Related with Obesity Indices Among the Health Checkup Examinees (건강검진 수검자들의 대사증후군 위험인자별 유병률 및 비만지표와의 관련성)

  • Park, Kyu-Ri;Cho, Young-Chae
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.3
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    • pp.153-162
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    • 2016
  • The aim of this study was to estimate the prevalence of the metabolic syndrome risk factors for adults in the general population, understand the relationship of each factor with the obesity indicators, and examine the relevance and validity for predicting the metabolic syndrome in obese indicators. The study subjects were 1,051 adults aged 20 years and over, who underwent a health package check-up at the Korea Association of Health Promotion, D-branch from Feb. to Nov. 2014. As a result, the prevalence rates of metabolic syndrome of the study subjects were 21.5%, and the prevalence rates of the metabolic risk factors were as follows: 31.8% of men and 41.6% of women for abdominal obesity; 35.6% of men and 17.3% of women for TG; 17.6% of men and 34.2% of women for HDL-C; 53.5% of men and 35.9% of women for blood pressure; and 14.9% of men and 6.8% of women for FBS. The prevalence rates of metabolic syndrome were significantly higher in the older age group, in the group with the higher BMI, and in the group of higher level of drinking frequency. In the predictive indicators of obesity on metabolic syndrome risk factors, the waist / height ratio was higher than other indicators. Conclusively, WHtR appeared to be a useful indicator to show abdominal obesity and is better in selecting metabolic syndrome patients compared to other obesity indicators.

Design of High Gain Differential Amplifier Using GaAs MESFET's (갈륨비소 MESFET를 이용한 고이득 차동 증폭기 설계)

  • 최병하;김학선;김은로;이형재
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.17 no.8
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    • pp.867-880
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    • 1992
  • In this paper, a circuit design techniques for Improving the voltage gain of the GaAs MESFET single amplifier is presented. Also, various types of existing current mirror and proposed current mirror of new configuration are compared. To obtain the high differential mode gain and low common mode gain, bootstrap gain enhancement technique Is used and common mode feedback Is employed In the design of differential amplifier. The simulation results show that designed differential amplifier has differential gain of 57.66dB, unity gain frequency of 23.25GHz. Also, differential amplifier using common mode feedback with alternative negative current mirror has CMRR of 83.S8dB, stew rate of 3500 V /\ulcorners.

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A Research of the Width of Passage in the Namyangju Elementary School Classroom (남양주 초등학교 일반교실의 통로 폭에 관한 조사 연구)

  • Yoon, Hee-Cheol
    • The Journal of Sustainable Design and Educational Environment Research
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    • v.19 no.4
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    • pp.60-69
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    • 2020
  • This research is a preliminary study to find out the module of 20 students in a classroom. This research investigated the widths of passages in the 30 classrooms of 5 elementary schools in Namyangju City, Korea. The conclusions were as follows: First, the area of unit for 1 student was 650 (W) × 950 (D). Second, the desk placements for most classrooms were one-way types (87%), and group-study types constituted 13%. Third, the width between the blackboard and the very front desk was 2.17 m. The width of passage between the very back seat and the backside lockers was 1.32 m. The width of passage between the sidewall and the nearby desk was 0.8 m. The width of passage between the window and the nearby desk was 0.8 m. The average widths of 2 vertical passages between the desks were respectively 0.67 m and 0.68 m. Fourth, the area of the teacher was 2.1-2.25 m × 2.16 m = 4.5-4.8 ㎡.

3D DMB 방송 서비스 기술

  • Jeong, Gwang-Hui;Lee, Bong-Ho;Yun, Guk-Jin;Heo, Nam-Ho;Lee, Su-In
    • Information and Communications Magazine
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    • v.26 no.10
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    • pp.11-17
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    • 2009
  • 이동 TV라고 일컬어지는 DMB는 2009년 8월 현재 2천 만대 이상의 단말이 판매되어 사용자에게 시간과 장소에 구애받지 않고 이동 TV를 비롯한 다양한 형태의 데이터 서비스를 제공하는 이동방송 시스템으로 자리 잡아 가고 있다. 또한 사용자에게 보다 더 유익한 서비스 제공을 위해 양방향 웹 기술을 축으로 하는 DMB2.0이 곧 상용화될 예정이다. 본 고에서는 향후 이동방송 서비스가 진화할 것으로 예상되는 실감 방송이라고 불리는 3D 방송서비스 및 관련 기술 개발 동향을 소개하고자 한다.

Fabrication of Barium Oxide Ferrite Magnet- I (바리움 헤라이트 자석의 시작 1)

  • 백용현
    • 전기의세계
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    • v.19 no.4
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    • pp.12-17
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    • 1970
  • BaO.nFe$_{2}$O$_{3}$ Powder ferrite magnet was made by sintering process. The purity of the powder were 99.6% far BaO. 99.5% for Fe$_{2}$O$_{3}$, and the grain size 1-3 micron. The Optimum mixing ratio n=4.4 the optimum density 4.8gr/cm$^{3}$ and the optimum second sintering temperature 1260.deg. C was found. The theoretical bloch wall, dimension of domain and energy per unit volume of BaFe$_{12}$O$_{19}$ were compared with pure Fe. Also, the saturation magnetization and maximum energy product were computed.d.d.

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