• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.141-145
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• 1998

The electrical properties of the mixed conducting yttria(8 mol%) stabilized zirconia(YSZ)-nickel oxide(NiO) composites were examined by a.c. impedance, 4-probe d.c. conductivity between 400 and $1000^{\circ}C$. The oxygen partial pressure dependence of conductivity, and electromotive force measurement of galvanic cell enabled to determine the electronic contribution to the conduction. Up to 6 vol% NiO addition, the conductivity decreased since the electronic NiO acted as an insulator in ionic matrix. However the ionic transport was dominant until NiO content reaches 26 vol%. Mixed conduction was observed between 26 and 68 vol% of NiO. The effect of composition on the electrical property was explained by the microstructure and thus by the distribution of two phases.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.321-324
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• 1991

In this study, $(Sr{\cdot}Pb)TiO_3$ series ceramics which is used in high voltage were fabricated by the mixed oxide method, and the electrical conduction mechanism and D.C. breakdown voltage characteristics of the specimens in accordance with the contents of $Bi_2O_3{\cdot}3TiO_2$ were investigated. As a result, the leakage current was increased with the contents of $Bi_2O_3{\cdot}3TiO_2$ and the measuring temperature. At room temperature, the leakeage current was showed a tendency of saturating when D.C. electrical field of $l5{\sim}30$[kV/cm] was applied to the specimen. As a result of breakdown voltage characteristics. breakdown strength was decreased when the contents of $Bi_2O_3{\cdot}3TiO_2$ were increased. On the other hand, in the temperature region below $60[^{\circ}C]$, the electronic breakdown was occured, and in the temperature region from 60 to $200[^{\circ}C]$, the thermal breakdown was occured by the Joule heat and the dissipation factor.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.549-551
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• 2005

Bidirectional DC/DC converters allows transfer of power between two dc sources, in either direction. Due to their ability to reverse the direction of flow of power, they are being increasingly used in many applications such as battery charger/dischargers, dc uninterruptible power supplies, electrical vehicle motor drives, aerospace power systems, telecom power supplies, etc. This paper proposes a new bidirectional Sepic/zeta converter. It has low swicthing loss and low conduction loss due to auxiliary communicated circuit and synchronous rectifier operation, respectively. Because of positive and buck/boost-like DC voltage transfer function(M=D/1-D), the proposed converter is very desirable for use in distributed power system . The proposed converter also has both transformerless version and transformer one.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1503-1506
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• 1997

The main fault in this interface is that power cable insulating materials are mainly composed of a double layered structure, XLPE/EPDM laminates in cable joint. In this paper, we instituted the interface of normal and degassed XLPE/EPDM and then investigated the breakdown and conduction characteristics as a function of heat treatment time. The results showed that conduction and breakdown strength was influenced by volatile crosslinking by-products which remained inside the insulating material during the production of XLPE and EPDM, especially during heat treatment process. And micro voids and surface roughness also influenced the conduction current and breakdown strength.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.602-605
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• 2009

The heat generation in the high-$T_c$ superconducting (HTS) wire is related with the cost efficiency and safe factor of HTS devices. This paper deals with the thermal quench at the conduction-cooled joint between HTS wire and copper terminals. The 3-D numerical simulation of thermal distributions in part of the copper terminals was implemented and the premature quench at copper block was observed through the test. The results will be helpful to design the conduction-cooled HTS magnets.

• Journal of radiological science and technology
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• v.10 no.1
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• pp.75-83
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• 1987

The insulating oil used for X-ray tube housing were degraded by X-ray irrdiation, high temperature and high anode voltage for normal operation. This study was measured the conduction current-X-ray dose, heating degradation, time, temperature and electric field characteristics and the dependense of electrode materials and gap length in the X-ray irradiatied insulating oil under of D.C voltage. The obtained results can be summarized as following. 1. The conduction current of X-ray irradiated insulating oil is more about $2.5{\sim}3$ times as large as than that of non x-ray irradiated, and is become saturation phenomena after some degree. 2. The conduction current of many times heating x-ray irradiated insulating oil is more than that of a few times heating. 3. The higher temperature x-ray irradiated insulating oil is increased, the more conduction current, and that is increased about ten times as large as when it's temperatures is increased to $80^{\circ}C\;at\;30^{\circ}C$, twenty five times at $100^{\circ}C$. 4. The dependence of electrode materials is appeared at the low electric field, and the small gap length with Fe > Cu > Al. 5. The low electric field than 3000 v/cm is appeared Ohm's law region, and the high is become saturation region at the I-E characteristics. 6. The larger gap length is become, the more conduction current is increased at the same electric field.

• Journal of the Korean Chemical Society
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• v.49 no.6
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• pp.560-566
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• 2005

Sintered ceramic samples of pure and some copper doped layered sodium lithium tri-titanate ($Na_{1.9}Li_{0.1}Ti_{3-X}Cu_XO_{7-X}$) materials with different dopant molar percentages (0.0$Cu^{2+}$ at $Ti^{4+}$ sites in the lattice is proposed in this paper. Furthermore, three distinct regions have been identified in log(${\sigma}_{d.c.}T$) versus 1000/T plots. The lowest temperature region is attributed to electronic hopping conduction(polaron) for all copper doped derivatives and ionic conduction for lithium substituted $Na_2Ti_3O_7$.The mechanism of conduction in the intermediate region is associated interlayer ionic conduction and in the highest temperature region is associated modified interlayer ionic conduction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.706-710
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• 2008

The substrate bias effect on the current level of SOI-MOSFETs for high temperature operation has been investigated. In this work, we demonstrate the current level of SOI-MOSFETs can be controlled at different temperatures by applying a control bias to the substrate, showing that all current levels below T=150$^{\circ}C$ can be adjusted to a constant current level. 2D numerical simulation results show that substrate bias effectively controls the current conduction; as the substrate bias effectively lower the potential of the channel, inversion carrier generation is effectively controlled and consequently a constant current conduction level is achieved up to T=150$^{\circ}C$. We also demonstrate that the device simulated in this work has same operation at any temperature below T=150$^{\circ}C$ through mixed mode simulation.

• Proceedings of the KIEE Conference
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• 2001.07b
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• pp.1126-1128
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• 2001

A single-stage high-power-factor electron ic ballast operating in critical conduction mode is presented in this paper. The proposed topology is based on integration of a boost-like converter and a LCC Type half-bridge serial resonant inverter. The power-factor-correction(PFC) stage is a boost-like converter operating in critical conduction mode for positive and negative half cycle voltage respectively at line frequency (60Hz) so that a high power factor is achieved naturally. The simulated and experimental results for 100w fluorescent lamps operating at 42kHz switching frequency and 220V line voltage have been obtained.

• Bulletin of the Korean Chemical Society
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• v.16 no.10
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• pp.929-933
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• 1995

The electronic band structure and electrical properties of KMo4O6 containing chains of condensed molybdenum octahedra are analyzed by means of the extended Hu&ckel tight-binding method. KMo4O6 has partially filled bands of 1D as well as 3D character. They also exhibit the anisotropic band dispersions with bandwidths much larger along the c* axis than along the directions perpendicular to it. Thus, conduction electrons are essentially delocalized along the c* direction (i.e., the chain of condensed molybdenum octahedra) in the solid. The 1D band of two partially filled d-block bands leads to Fermi surface nesting with the wave vector q=0.3c*. The CDW instability due to this nesting is expected to cause the phase transition associated with the resistivity anomaly at low temperature. The characteristics of metallic behavior in the crystallographic ab plane are explained on the basis of the unnested 2D Fermi surfaces.