• The Journal of Korean Institute of Communications and Information Sciences
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• 제27권4B호
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• pp.365-371
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• 2002

In this paper, the fabricated power PHEMT devices for millimeter-wave that is below a gate-length of 0.2 $\mu\textrm{m}$ using electronic beam lithography technologies, and the DC and frequency characteristics and an output power characteristics were Measured at the various bias conditions. The unit process that is used in PHEMT's manufacture used that low-resistance ohmic contact, air-bridge and back-side lapping process technologies, and so on. The fabricated power PHEMT have an S521 gain of 4 dB and a maximum transconductance(gm) of 317 mS/mm, an unilateral current gain(fT) of 62 GHz, a maximum oscillation frequency(fmax) of 120 GHz at 35 GHz, and a maximum power output(Pmax) of 16 dBm, a power gain(GP) of 4 dB and a drain efficiency(DE) of 35.5 %.

• Journal of the Korean Institute of Telematics and Electronics D
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• 제34D권5호
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• pp.61-66
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• 1997

In this paper we report the fabrication of an InGaAs metal-semiconductor-metal (MSM) photodiode(PD) which an InAlAs barrier enhancement layer that has very low dark current and high speed chracteristics. The detector using Cr/Au schottky metal fingers with 4um spacing on a large active area of 300*300um$^{2}$ offers a low dark current of 38nA at 10V, a low capacitance of 0.8pF, and a high 3-dB bandwidth of 2.4 GHz. To our knowledge, these characteristics are better than any previously published results obtained from large area InGaAs MSM PD's. The RC equivalent model and frequency domain current response model considering transit time were also used to analyze the frequency characteristic of the fabricated device.

• Korean Journal of Materials Research
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• 제22권4호
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• pp.185-189
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• 2012

We report plasma-assisted molecular beam epitaxy of $In_XGa_{1-X}N$ films on c-plane sapphire substrates. Prior to the growth of $In_XGa_{1-X}N$ films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growth mode. For the growth of GaN, Ga flux of $3.7{\times}10^{-8}$ torr as a beam equivalent pressure (BEP) and a plasma power of 150 W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by $in-situ$ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showed lower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEP value of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that of InN, which is probably caused by the higher vapor pressure of In. For the growth of $In_xGa_{1-x}N$ films with different In compositions, total III-element flux (Ga plus In BEPs) was set to $3.7{\times}10^{-8}$ torr, which was the BEP value for the 2D growth of GaN. The In compositions of the $In_xGa_{1-x}N$ films were determined to be 28, 41, 45, and 53% based on the peak position of (0002) reflection in x-ray ${\theta}-2{\theta}$ measurements. The growth of $In_xGa_{1-x}N$ films did not show a streaky RHEED pattern but showed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered based on the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migration velocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum value of 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness value of 0.71 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.346-346
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• 2012

We investigated electrical and optical properties and chemical states of amorphous In-Ga-Zn-O (a-IGZO) thin films deposited at different substrate temperatures (from room temperature to $300^{\circ}C$). a-IGZO thin films were fabricated by radio frequency magnetron sputtering using $In_2O_3$ : $Ga_2O_3$ : ZnO = 1 : 1 : 1 target, and their electrical and optical properties and chemical states were investigated by Hall-measurement, UV-visible spectroscopy and x-ray photoelectron spectroscopy (XPS), respectively. The data showed that as substrate temperature increased, carrier concentration increased, but mobility, conductivity, transmittance in the shorter wavelength region (>350 nm), and the Tauc-plot-estimated optical bandgap decreased. XPS data indicated that the intensity of In 3d peak compared to Ga 3d peak increased but the intensity of Zn 3d peak compared to Ga 3d decreased, and that, from the deconvoluted O 1s peak, defects or oxygen vacancies and non-quaternary contents increased as the temperature increased. The relative intensity changes of the In, Zn, and O 1s sub-component are suggested to explain the changes in electrical and optical properties.

• Journal of computational fluids engineering
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• 제6권3호
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• pp.10-18
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• 2001

Genetic Algorithm(GA) is applied to aerodynamic shape optimization and demonstrated its merits in global searching ability and the independency of differentiability. However, applications of GA are limited due to slow convergence rate, premature termination, and high computing costs. The present aerodynamic designs such as wing shape optimizations using GA have seldom been applied because of high computing costs. This paper has two objects; improvement of the efficiency of GA and application of GA into aerodynamic shape optimization for 2D and 3D wings. The study indicates that GA can be applied to aerodynamic design and its performance is comparable to traditional design methods.

• The Journal of the Korea institute of electronic communication sciences
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• 제13권5호
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• pp.943-948
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• 2018

In this paper, SSPA Module for X-band radar was designed and fabricated by using GaN MMIC. For the purpose of configuring the high power SSPA module, the drive steamers are composed of 2-layers of GaN MMIC with considering Gain Loss. In addition, the power divider and power combiner used a 4way approach by designing a 4-stage power amplifier. The power divider has a loss of -3.0dB or more, and the I/O has a loss of -0.2dB in the power combiner and the phase difference between the ports are good at $2^{\circ}$ on average. The fabricated SSPA module got the measurement results that satisfy a Gain 48dB, P(sat)=88.3W(49.46 dBm), PAE=30.3% or more efficiency in condition of frequency range 9~10GHz. The fabricated X-Band SSPA module can be applied in RF performance improvement for SSPA module whit improvement of power divider/combiner.

• The Transactions of the Korean Institute of Electrical Engineers D
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• 제53권7호
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• pp.531-535
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• 2004

A new method is presented to construct a classifier. This was accomplished by combining a generalized regression neural network (GRNN) and a genetic algorithm (GA). The classifier constructed in this way is referred to as a GA-GRNN. The GA played a role of controlling training factors simultaneously. The GA-GRNN was applied to classify 4 different Promoter sequences. The training and test data were composed of 115 and 58 sequence patterns, respectively. The classifier performance was investigated in terms of the classification sensitivity and prediction accuracy. Compared to conventional GRNN, GA-GRNN significantly improved the total classification sensitivity as well as the total prediction accuracy. As a result, the proposed GA-GRNN demonstrated improved classification sensitivity and prediction accuracy over the convention GRNN.

• Applied Biological Chemistry
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• 제29권1호
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• pp.73-77
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• 1986

Aqueous solutions of 2,4-D, BA or $GA_3(10^{-6},\;10^{-5},\;and\;10^{-4}M,\;respectively)$ were sprayed onto soybean (Glycine max) plants in the flowering stage, and proteins of immature (33days after flowering) and mature (77days after flowering) seeds were analyzed by electrophoresis to elucidate the effects of the growth reguators on protein synthesis or protein accumulation in the seeds. Accumulations of some proteins were altered by 2,4-D or BA at certain concentrations, but no proteins were affected by $GA_3$. The ${\alpha}\;and\;{\alpha}'$ subunits of 7S and acidic subunit of 11S disappeared in mature seeds after treatments at the flowering stage with 2,4-D or BA. The presence of ${\alpha}\;and\;{\alpha}'$ subunits of 7S and acidic subunit of 11S in immature seeds indicated that the absence of the above polypeptides in mature seeds did not result from inhibitions in syntheses of the polypeptides by the growth regulators. Disappearance of the above proteins in mature seeds seemed to be concerned with the action of specific proteolytic enzyme (s) (metalloendopeptidase?), and 2,4-D and BA might promote gene expression or activation of the enzyme.

• Proceedings of the KIEE Conference
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.353-355
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• 1988

The properites of Zn-diffusion in III-V ternary alloy semiconductor $In_{1-x}Ga_{x}p$, which was grown by the temperature gradient solution (TGS) method, have been investigated. The composition, x, dependence of the Zn-diffusion coefficient at $850^{\circ}C$ and the activation energy for Zn-diffusion into $In_{1-x}Ga_{x}p$ were found to be $D850^{\circ}C$(x)= $3.935{\times}10^{-8}exp(-6.84{\cdot}x)$, and $E_{A}(x)=1,28+2,38{\cdot}x$, respectively. From this study, we confirm that the Zn-diffusion in $In_{1-x}Ga_{x}p$ was explainable with the diffusion mechanisms of the interstitial-substitutional, which was widely accepted mechanisms in the III-V binary semiconductors.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.134-134
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• 2010

Ga-In-Zn-O 물질은 비정질상태에서 높은 전하 운동성을 가지고 있으며 차세대 투명전극 thin film transistor 대안 소재로 각광받고 있다. 그런데 이 물질은 ion sputtering에 따라 전기적인 특성에 큰 변화가 관찰되고 있으며, 이는 표면에서의 화학적 상태가 전기적 특성을 좌우할 것이라는 것을 의미한다. 또한 보다 안정적이고 신뢰적인 소자를 구현하기 위해서는 ion sputtering에 의한 표면에서의 화학적 특성 변화를 이해하는 것이 매우 중요하다는 것을 의미한다. 본 연구에서는 $Ga_2O_3:In_2O_3$:ZnO의 비율이 각각 1:1:1, 2:2:1, 3:2:1 그리고 4:2:1인 시료를 $Ne^+$이온을 이용하여 sputtering하면서 표면에 민감한 분광분석 기법인 x-ray photoelectron spectroscopy와 x-ray absorption spectroscopy를 이용하여 분광정보의 변화들을 연구하였다. 실험에 의하면, Ga 3d의 양에 비해서 In 4d, Zn 3d의 양은 sputtering 시간에 따라서 각 각 양이 줄어들었으며, 전체적으로 보다 산화가가 높은 경향을 보였으며, valence band maximum 근처에 subgap state를 형성하는 것을 관찰하였다. 또한 sputtering을 계속하는 경우 In 3d, In 4d, 및 Fermi energy 근처에 metallic state가 형성되는 것을 관찰하였다. 이러한 subgap state와 metallic state의 관측은 각기 sputtering에 따라서, 아직 명확하지는 않지만, surface state의 형성 및/혹은 oxygen interstitial의 형성 그리고 metallic In의 형성 및/혹은 oxygen defect의 형성이 이루어지는 것을 의미한다.