• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.14 no.9
• /
• pp.944-949
• /
• 2003

In this paper, the double balance mixer(DBM) for Ku-band LNB using InGaP/GaAs HBT process is suggested for the characteristics of low DC power consumption, low noise figure, low intermodulation distortion and wide dynamic range. The 5 dB conversion gain, 14 dB NF, bandwidth 17.9 GHz and 50.34 dBc IMD are obtained under RF input power of -23 dBm, with bias condition as 3 V and 16 mA. The linearity of InGaP/GaAs HBT, the broad band input matching scheme and the optimization of bias point result in the low IMD, the broad bandwidth and the low power consumption characteristics.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.15 no.2
• /
• pp.145-151
• /
• 2004

This paper presents a fully integrated 5 GHz band low phase noise LC tank VCO. The implemented VCO is tuned by integrated PN diodes and tuning rage is 5.01∼5.30 GHz with 0∼3 V control voltage. For improved phase noise performance, a LC filtering technique is adapted. The measured phase noise is -87.8 dBc/Hz at 100 kHz offset frequency and -111.4 dBc/Hz at 1 MHz offset frequency which is excellent performance. Moreover phase noise is improved by 5 dB after employing the LC filter. It is the first experimental result in field of InGaP/GaAs HBT VCOs. The figure of merit of the fabricated VCO with LC filter is -172.1 dBc/Hz. It is the best result among 5 GHz InGaP HBT VCOs. Moreover this work shows lower DC power consumption, higher output power and more fixed output power compared with previous 4, 5 GHz band InGaP HBT VCOs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.26 no.2
• /
• pp.165-170
• /
• 2015

In this paper, we present design and measurement of LNA(Low Noise Amplifier) based on GaN HEMT(Gallium Nitride High Electron Mobility Transistor) to reduce the total noise figure of radar receiver and for robustness of LNA. In radar receiver using LNA based on GaAs(Gallium Arsenide) technology, limiter is necessary at the very front of the radar receiver to protect LNA. As a result, total noise figure of radar receiver is deteriorated. In this research, measured noise figure of LNA based on GaN HEMT is below 2 dB. In the case of commercialized GaAs LNA, recommended maximum input power is about 30 dBm. On the other hand, GaN HEMT LNA which is designed and measured is burned-out when input power is 43 dBm and robustness is guaranteed at input power 45.4 dBm.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.22 no.6
• /
• pp.149-154
• /
• 2022

Due to high power capabilities and high linearity of GaN devices, GaN Low-Noise Amplifiers (LNAs) without a limiter can be implemented in order to improve noise figure and reduce chip area in radar receivers. In this paper, a GaN LNA is presented for Ka-band radar receivers. The designed LNA was realized in a 150-nm GaN HEMT process and measurement results show that the voltage gain of >23 dB and the noise figure of <6.5 dB including packaging loss in the target frequency range. Under the high-power stress test, measured gain and noise figure of the GaN LNA is degraded after the first stress test, but no more degradation is observed under multiple stress tests. Through post-stress noise and s-parameter measurements, we verified that the GaN LNA is resilient to pulsed input power of ~40 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.28 no.5
• /
• pp.430-433
• /
• 2017

This paper presents a S/C/X-band LNA MMIC with resistive feedback structure in 0.25 um GaN HEMT process. The GaN devices have advantages as a high output power device having high breakdown voltage, energy band gap and stability at high temperature. Since the receiver using the GaN device with high linearity can be implemented without a limiter, the noise figure of the receiver can be improved and the size of receiver module can be reduced. The proposed GaN LNA MMIC based on 0.25 um GaN HEMT device is achieved the gain of > 15 dB, the noise figure of < 3 dB, the input return loss of > 13 dB, and the output return loss of > 8 dB in the S/C/X-band. The current consumption of GaN LNA MMIC is 70 mA with the drain voltage 20 V and the gate voltage -3 V.

• Journal of IKEEE
• /
• v.28 no.1
• /
• pp.33-37
• /
• 2024

In this paper, we report the design and the measurement of a X-band low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) using a 0.25 ㎛ gate length microstrip GaN-on-SiC high electron mobility transistor (HEMT) technology. The developed X-band GaN-based LNA MMIC achieves small signal gain of 22.75 dB ~ 25.14 dB and noise figure of 1.84 dB ~ 1.94 dB in the desired band of 9 GHz to 10 GHz. Input and output return loss values are -11.36 dB ~ -24.49 dB and -11.11 dB ~ -17.68 dB, respectively. The LNA MMIC can withstand 40 dBm (10 W) input power without performance degradation. The chip dimensions are 3.67 mm × 1.15 mm. The developed GaN-based LNA MMIC is applicable to various X-band applications.

• Journal of IKEEE
• /
• v.26 no.4
• /
• pp.722-727
• /
• 2022

In this paper, we present the design and characterization of a power amplifier (PA) monolithic microwave integrated circuit (MMIC) in the X-band. The device is designed using a 0.25 ㎛ gate length AlGaN/GaN high electron mobility transistor (HEMT) on SiC process. The developed X-band AlGaN/GaN power amplifier MMIC achieves small signal gain of over 21.6 dB and output power more than 46.11 dBm (40.83 W) in the entire band of 9 GHz to 10 GHz. Its power added efficiency (PAE) is 43.09% ~ 44.47% and the chip dimensions are 3.6 mm × 4.3 mm. The generated output power density is 2.69 W/mm². It seems that the developed AlGaN/GaN power amplifier MMIC could be applicable to various X-band radar systems operating X-band.

• Journal of Bio-Environment Control
• /
• v.24 no.1
• /
• pp.27-33
• /
• 2015

High temperature stress in summer season at plastic house is a limiting factor for tomato fruit set and yield. This study was performed to assess the effects of gibberellic acid ($GA_3$) and 2,4-Dichlophenoxy acetic acid (2,4-D) spray on fruit set, yield, and quality of tomato cv. 'Adoration'(Enza Zaden Co., Ltd.) under the plastic house in Hwacheon, 2011. Four concentrations (0-, 5-, 10- and $15mg{\cdot}L^{-1}$) of $GA_3$, and three concentrations (0-, 5- and $10mg{\cdot}L^{-1}$) 2,4-D were sprayed in early flowering of tomato in the plastic house, and fruit set, yield and quality characters were observed. The results showed that spray of $10mg{\cdot}L^{-1}$ $GA_3$ significantly increased the fruit set by 14.2% than unsprayed. The spray of $GA_3$ significantly increased the marketable fruit number, fruit weight, and yield. The spray of 2,4-D on blossoms significantly affected the fruit set percentage, fruit weight, marketable fruit weight and yield, and the highest fruit set observed as 62.5% in combined spray of $GA_3$ and 2,4-D at each $5mg{\cdot}L^{-1}$. Fruit size and total soluble solids significantly varied with the concentrations of $GA_3$ sprayed. The result indicates that the spray of $10mg{\cdot}L^{-1}$ $GA_3$ and $5mg{\cdot}L^{-1}$ 2,4-D can be more economic and effective to increase the fruit set, and yield in tomato under high temperature condition in plastic house.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.4
• /
• pp.478-483
• /
• 2014

We propose a new method which can extract the information about the electronic traps in the semi-insulating GaN buffer of AlGaN/GaN heterostructure field-effect transistors (HFETs) using a simple test structure. The proposed method has a merit in the easiness of fabricating the test structure. Moreover, the electric fields inside the test structure are very similar to those inside the actual transistor, so that we can extract the information of bulk traps which directly affect the current collapse behaviors of AlGaN/GaN HEFTs. By applying the proposed method to the GaN buffer structures with various unintentionally doped GaN channel thicknesses, we conclude that the incorporated carbon into the GaN back barrier layer is the dominant origin of the bulk trap which affects the current collapse behaviors of AlGaN/GaN HEFTs.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2003.11a
• /
• pp.155-159
• /
• 2003

This paper presents fully integrated 5 GHz band low phase noise LC tank VCO. The implemented VCO is tuned by integrated PN diode and tuning rage is $5.01{\sim}5.30$ GHz under $0{\sim}3 V$ control voltage. For good phase noise performance, LC filtering technique, common in Si CMOS process, is used, and to prevent degradation of phase noise performance by collector shot-noise and to reduce power dissipation the HBT is biased at low collector current density bias point. The measured phase noise is -87.8 dBc/Hz at 100 kHz offset frequency and -111.4 dBc/Hz at 1 MHz offset frequency which is good performance. Moreover phase noise is improved by roughly 5 dEc by LC filter. It is the first experimental result in InGaP/GaAs HBT process. The figure of merit of the fabricated VCO with LC filter is -172.1 dBc/Hz. It is the best result among 5 GHz InGaP HBT VCOs. Moreover this work shows lower DC power consumption, higher output power and more fixed output power compared with previous 4, 5 GHz band InGaP HBT VCOs.