• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.11a
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• pp.370.2-370
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• 2002

Magnetostrictive materials are used low-frequency sonar transmitter instead of piezoelectric materials. But it is difficult to analyze due to the nonlinearity and hysteresis of magnetostrictive materials. This paper deals with the program development based on finite element method to model the magnetostrictive tonpilz transducers and to analyze their acoustic characteristics. (omitted)

• Elastomers and Composites
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• v.56 no.4
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• pp.223-233
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• 2021

In this study, epoxidized liquid isoprene rubber (E-LqIR) was used as a processing aid in a silica-filled natural rubber compound to improve the fuel efficiency, abrasion resistance, and oil migration problems of truck and bus radial tire tread. The wear resistance, fuel efficiency, and extraction resistance of the compound were evaluated according to the molecular weight of E-LqIR. Results of the evaluation showed that the E-LqIR compound had a lower chemical crosslink density than that of a treated distillate aromatic extract (TDAE) oil compound because of the sulfur consumption of E-LqIR. However, the filler-rubber interaction improved because of the reaction of E-LqIR with silica and crosslink with the base rubber by sulfur. As the molecular weight of E-LqIR increased, crosslink with sulfur was facilitated, and the filler-rubber interaction improved, resulting in improved abrasion resistance. The fuel efficiency performance of the E-LqIR compound was poorer than that of the TDAE oil compound because of the low chemical crosslink density and hysteresis loss at the free chain end of E-LqIR. However, the fuel efficiency performance improved as the molecular weight of E-LqIR increased.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.167-170
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• 1991

The back e.m.f. of PMSM is increased as the speed is increased and it saturates the current regulator because it counteracts the available output voltage of the inverter. In the PM motor, however, the required armature terminal voltage can be reduced within the maximum output voltage of the inverter by field weakening control, in which the air gap flux is weakened by the d-axis armature current. In this paper, the field weakening control of the surface PMSM fed by a hysteresis current control led PWM inverter based on the microprocessor is presented. To show the validity of the proposed control method, the simulation and experimental results are provided.

• Journal of the Korean Magnetics Society
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• v.13 no.1
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• pp.36-40
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• 2003

We have grown D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ (x = 0.5,1.0, 1.5,2.0) magnetic garnet thin films upon $Al_2$O3i and GGG substrate using Pechini process. The annealing temperature to get single phase D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ garnet is dependent on substrate, i.e. the annealing temperature for GGG substrate il 5$0^{\circ}C$ lower than that for $Al_2$ $O_3$ substrate. The grains of garnet thin film grown on GGG (111) plane align along [111] direction, and in this case the hysteresis curve does not saturate up to H : 5000 Oe. We attribute this phenomenon to rotation magnetization process. The maximum amount of Bi substitution in polycrystalline D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ thin film prepared by Pechini process is restricted to 2.0 Bi atom/unit cell, and this value is less than that in single garnet crystall grown by LPE method.own by LPE method.ethod.

• Resources Recycling
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• v.13 no.6
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• pp.37-42
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• 2004

The power loss analysis was carried out for Ni-Cu-Zn ferrite sample with different content of NiO and ZnO. The power loss, Pcv decreases monotonically with increasing temperature and attains to a certain value at around 100~120 degrees Celsius. The frequency dependence of Pcv can be explained by Pcv~f$^n$, and n is independent of the frequency, f up to 1 MHz. The Pcv decreases with an increase in ZnO/NiO. The Pcv was separated to hysteresis loss(Ph) and residual loss(Pcv-Ph). The temperature characteristics and compositional dependence of Pcv can be attributed to the Ph, while Pcv-Ph is not affected by both temperature and ZnO/NiO. By analyzing temperature and composition dependence of Ph and initial permeability, ${\mu}_i$ like following equations could be formularized. ${\mu}_i{\mu}_0=I_s^2/(K_I+b{\sigma}_0{\lambda}_s)$ Wh=13.5(I$_s^2/{\mu}_i{\mu}_0)$ Where ${\mu}_0$ is permeability of vacuum, I$_s$ is saturation magnetization, K$_I$ is anisotropy constant, $s_0$ is internal heterogeneous stress, ${\lambda}_s$ is magnetostriction constant, b is unknown constant, and Wh is hysteresis loss per one cycle of excitation (Ph=Wh${\times}$f). Steinmetz constant of Ni-Cu-Zn ferrite, m=1.64~2.2 is smaller than that of Mn-Zn ferrites, which suggests the difference of loss mechanisms between these materials.

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 2004.12a
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• pp.3-11
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• 2004

The power loss analysis was carried out for Ni-Cu-Zn ferrite samples with different content of NiO and ZnO. The power loss, Pcv decreases monotonically wi increasing temperature and attains to a certain value at around $100\~120$ degrees Celsius. The frequency dependence of Pcv can be explained by $Pcv\~f^n$', and n is independent of the frequency, f up to 1MHz. The Pcv decreases with an increase in ZnO/NiO. The Pcv was separated to hysteresis loss, Ph and residual loss, (Pcv-Ph). The temperature characteristics and compositional dependence of Pcv can be attributed to the Ph, while (Pcv-Ph) is not affected by both temperature and ZnO/NiO. By analyzing temperature and composition dependence of Ph and initial permeability, ${\mu}^i$ following equations could be formularized. $${\mu}_i{\mu}o=I_x\;^2/(K_1+bs_ol_s)\;\;\;\;(1)$$ $Wh=13.5(I_s\;^2/{\mu}_i{\mu}_o)\;\;\;\;(2)$$ Were ${\mu}_o$ is permeability of vacuum, $I_s$ saturation magnetization, $K_1$ anisotropy constant, $S_o$ internal heterogeneous stress, $I_s$, magnetostriction constant, b unknown constant. Wh hysteresis loss per one cycle of excitation (Ph: Wh*f). Steinmetz constant of Ni-Cu-Zn ferrites, $m=1.64\~2.2$ is smaller than the one of Mn-Zn ferrites, which suggests the difference of loss mechanism between these materials.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.6-9
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• 2005

Aging characteristics of 0.2PMN-0.8PZT multilayer ceramic actuators (MCA) has been investigated by applying both triangular wave function for unpoled and unipolar wave for poling. P-E hysteresis loops of the MCA had been distorted after about 90 million cycles running in triangular wave function. Effective electromechanical coupling coefficient was calculated in resonant and anti resonant frequencies. And pseudo-piezoelectric constant $d_{33}$ was also estimated from the strain versus electric field characteristics. The crack growth of MCA was clearly observed along to the boundary between electrode and inactive area. That results were thought due to the internal tensile stress came from both actuation of $d_{33}$ mode and motion of Poisson ratio.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1029-1033
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• 1997

A prototype MFSFET using ferroelectric fluoride BaMgF$_4$as a gate insulator has been successfully fabricated with the help of 2 sheets of metal mask. The fluoride film was deposited in an ultrai-high vacuum system at a substrate temperature of below 30$0^{\circ}C$ and an in-situ post-deposition annealing was conducted for 20 seconds at $650^{\circ}C$ in the same chamber. The interface state density of the BaMgF$_4$/Si(100) interface calculated by a MFS capacitor fabricated on the same wafer was about 8$\times$10$^{10}$ /cm$^2$.eV. The I$_{D}$-V$_{G}$ characteristics of the MFSFET show a hysteresis loop due to the ferroelectric nature of the BaMgF$_4$film. It is also demonstrated that the I$_{D}$ can be controlled by the “write” plus which was applied before the measurements even at the same “read”gate voltage.ltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.909-915
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• 1997

To improve the electro-induced strain and to decease the hysteresis of that W $O_3$dopant of which amount is 0~0.8wt% was added to (P $b_{0.73}$/B $a_{0.27}$)(Z $r_{0.75}$/ $Ti_{0.25}$) $O_3$+0.1wt% $Y_{2}$/ $O_3$ceramics. At the specimen with 0.4 wt% W $O_3$the electromechanical coupling coefficient( $K_{31}$ ) showed the maximum value of 23.6% at D.C 10 kV/cm electric field. At the same W $O_3$addition amount the piezoelectric constant( $d_{31}$ ) and the electro-induced strain($\Delta$$\ell$/$\ell$)showed the highest values of 182$\times$10$^{-12}$ [C/N] 210$\times$10$^{-6}$ $\Delta$$\ell$/$\ell$at D.C. 10 kV/cm electric field. respectively0 kV/cm electric field. respectivelyvely.