• Title/Summary/Keyword: D-Band

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Design and implementation of dual-mode cavity filter with achebyshev response (체비셰프 응답을 갖는 이중모드 공동 공진기 필터의 설계 및 제작)

  • 김상철;홍의석
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.21 no.2
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    • pp.505-513
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    • 1996
  • In this paper the dual-mode bandpass filters with a Chebyshev response are designed and manufactured at Ku-band as well as K-band. Manufactured filters are resonated by two independent orthogonal $TE_{113}$ circular-cavity modes and characterized by 4-pole Chebyshev function. One is operating at a center frequency of 12.5GHz with a bandwidth of 100MHz and the other, a center frequency of 19.25GHz with 120MHz, respectively. The measureed experimental results of a 12.5GHZ dual-mode filter ahve a 1.2dB intertion loss in the passband and 65dB out-of-rejection, and a 19.25GHz filter has a 1.55dB insertion loss and 70dB out-of-rejection. These experimantal results shoults show good agreements with the design specifications.

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Femtosecond degenerate and nondegenerate pump-probe experiments in bulk GaAs below the band gap

  • Yahng, J. S.;Kim, D. S.;Fatti, N.Del;Vallee, F.
    • Journal of the Optical Society of Korea
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    • v.1 no.2
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    • pp.100-103
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    • 1997
  • We perform degenerate and nondegenerate pump-probe experiments on bulk GaAs at 100 K below the band gap. We mostly observe a negative differential transmission signal both in the degenerate and nondegenerate experiments. We interpret our signal as due to two-photon absorption. This negative signal has a different origin from the normally considered band gap renormalization for resonant excitations.

Design and Fabrication of Ka-Band MMIC Low Noise Amplifier for BWLL Application (Ka-Band BWLL용 MMIC 저잡음 증폭기의 설계 및 제작)

  • 정진철;염인복
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2000.11a
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    • pp.179-182
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    • 2000
  • BWLL용 Ka-Band MMIC 저잡음 증폭기 칩을 InGaAs/GaAs 0.15um Gate 길이의 p-HEMT 공정을 이용하여 개발하였다. 칩 크기 2.5$\times$1.5$\textrm{mm}^2$의 2단으로 설계된 칩의 On-wafer 측정 결과, 24~27 GHz BWLL 주파수 대역에서 최소 19$\pm$0.2dB 이득과 최대 1.7dB의 잡음 지수와 최소 13dB의 반사손실의 특성을 얻었다.

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Development of a Receiver Downconverter Module for Ka-band Satellite Payload (Ka-Band 위성중계기용 수신하향변환기 모듈 개발)

  • 장동필;염인복;이성팔
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.1
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    • pp.68-74
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    • 2003
  • This paper describes the design and the test results of the receiver-downconverter module for a Ka-band Satellite Payload. The developed module is not only a downconverter that convert the signal of 30.6 GHz∼31.0 GHz to the signal of 20.8 GHz∼21.2 GHz but also is a receiver that has the function of low noise amplification in the front stage. It has been fabricated and tested by the qualified satellite component manufacturing process and it shows the best performance of the receiver-downconverter modules operating at Ka-band frequency up to date. The module has the performance of 1.9 dB-NF, 55 dB-Gain, and 58 dBc-C/I3 fur the two tone signals of -59 dBm input power respectively at ambient temperature. It is a small and light module with the size of 93 mm${\times}$84 mm${\times}$26 mm and the weight of 240 g.

A Ku-band 3 Watt PHEMT MMIC Power Amplifier for satellite communication applications (위성 통신 응용을 위한 Ku-대역 3 Watt PHEMT MMIC 전력 증폭기)

  • Uhm, Won-Young;Lim, Byeong-Ok;Kim, Sung-Chan
    • Journal of IKEEE
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    • v.24 no.4
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    • pp.1093-1097
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    • 2020
  • This work describes the design and characterization of a Ku-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) for satellite communication applications. The device technology used relies on 0.25 ㎛ gate length gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) of wireless information networking (WIN) semiconductor foundry. The developed Ku-band PHEMT MMIC power amplifier has a small-signal gain of 22.2~23.1 dB and saturated output power of 34.8~35.4 dBm over the entire band of 13.75 to 14.5 GHz. Maximum saturated output power is a 35.4 dBm (3.47 W) at 13.75 GHz. Its power added efficiency (PAE) is 30.6~37.83% and the chip dimensions are 4.4 mm×1.9 mm. The developed 3 W PHEMT MMIC power amplifier is expected to be applied in a variety of Ku-band satellite communication applications.

Characteristics of Light Harvesting Chlorophyll-Protein Complex and Singlet Oxygen ($^1O_2$) Quenching in Leaf-burning Disease from Panax ginseng C. A. Meyer (인삼 Light Harvesting Chlorophyll Protein의 특성 및 엽소병에서 Singlet Oxygen($^1O_2$) Quenching)

  • 양덕조;이성택
    • Journal of Ginseng Research
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    • v.13 no.2
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    • pp.158-164
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    • 1989
  • In order to determine the relationships between the lea(-burning disease and the light harvesting chlorophyll-protein (LHCP) complex in Panax ginseng C. A. Meyer, we investigated the chlorophyll-protein (CP) complex of the thylakoid membrane and its characteristics. In P. ginseng four Cp-complex bands determined by non-denaturing SDS-PAGE were identified CP I'(containing reaction center of photosystem I and LHCP I antennae), CP I (reaction center of photosystem I) LHCP II** (oligoform of LHCP II), and LHCP II (photosystem II antennae, CP 26 and CP 29) by Bassis and Dunahay's procedures. Under our experimental condition, the CP I band was only observed in P. ginseng and the band intensity of LHCP II** in P ginseng was higher than in spinach and soybean. There were differences in the absorption and fluorescence spectra and chlorophyll a/b ratio of the CP-complex bands between P. ginseng and other Plants. The Polypeptidr content of P. ginseng thylakoid was lower than in spinach and soybean thylakoid, and the Polypeptide profiles of P. ginseng was low band intensity, especially about 29-35 kD, 55 kD, and 60 kD, compared to spinach and soybean. The inhibitory effects of 2,5-dimethylfuran, specific singlet oxygen ($^1O_2$) quencher, showed that singlet oxygen destroyed 60% of chl.a, 90% of chl.b and 70% of carotenoid in bleaching P. ginseng with leaf-burning disease.

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A compensation method for a temperature-dependent gain tilt in L-band EDFA using a voltage-controlled attenuator (L-band EDFA 에서의 온도에 따른 이득 변화와 가변 감쇄기를 이용한 온도 보상)

  • 이원경;정희상;주무정
    • Korean Journal of Optics and Photonics
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    • v.14 no.1
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    • pp.12-16
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    • 2003
  • This paper presents a compensation method for a temperature-dependent gain tilt in L-band erbium-doped fiber amplifier using a voltage-controlled attenuator. The gain tilts in the L-band of 1570-1605 nm due to a temperature change have negative slopes, whereas they have positive slopes for the increasing optical input powers in a saturation region. The proposed method utilizes these opposite gain variations to compensate for the gain tilt over a wide range of temperature. While applying forty channels with a channel spacing of 100 GHz in the L-band and changing the ambient temperature from 0 to $50^{\circ}C$, the compensation method maintained the gain deviation within 1 dB.

Improvement of Ka band Power Amplifier Employing Photonic Band Gap Structure (PBG 구조를 이용한 Ka Band 전력증폭기 성능개선에 관한 연구)

  • Seo Chulhun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.1
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    • pp.65-68
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    • 2004
  • The performances of millimeter wave Power amplifier have been improved by using PBG (photonic bandgap structure) in this paper. The PBG structure has been optimized to obtain the lowpass characteristics in Ka band and employed at output port of Ka band power amplifier. The harmonics of the power amplifier have been suppressed by the PBG of output port and the proposed PBG has suppressed the second harmonic to 40dBc around 50 GHz. The improvements of IMD and PAE of the amplifier employing the PBG structure are obtained $15\%$ and $25\%$, compared with those of the conventional Ka band power amplifier, respectively.

A Study on the Characteristics of Microstrip Patch Antenna with Slot/T-Slot Capacitive Coupling (슬롯/T-슬롯 커패시티브 커플링을 이용한 마이크로스트립 패치 안테나의 특성 연구)

  • Seo, Ki-Won;Roh, Hyoung-Hwan;Seong, Yeong-Rak;Oh, Ha-Ryoung;Park, Jun-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.7
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    • pp.1282-1288
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    • 2010
  • This paper proposes a novel microstrip patch antenna to make impedance matching possible by using slot/T-slot capacitive coupling between the patch and 50 $\Omega$ feed line on a ground plane. The single band/linear polarization patch antenna shows linear polarization at 2.4 GHz band. Under -10 dB return loss, the single band/linear polarization patch antenna obtains 50 MHz bandwidth at 2.37 GHz~2.42 GHz. The dual band/dual polarization microstrip patch antenna shows circular polarization at 2.4 GHz band and linear polarization at 3.1 GHz band. Under -10 dB return loss, The dual band/dual polarization microstrip patch antenna obtains 340 MHz bandwidth at 2.23~2.57 GHz and 375 MHz bandwidth at 2.95~3.325 GHz.

Microstrip Lowpass Filter with Very SharpTransition Band Using T-Shaped, Patch, and Stepped Impedance Resonators

  • Hayati, Mohsen;Sheikhi, Akram
    • ETRI Journal
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    • v.35 no.3
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    • pp.538-541
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    • 2013
  • A compact microstrip lowpass filter (LPF) with an elliptic function response is proposed. A high equivalent capacitance and inductance between the structures of the resonator result in the sharp transition band of 0.04 GHz from 4 GHz to 4.04 GHz with an attenuation level of -3 dB and -20 dB, respectively. To improve the LPF rejection band, multiple open stubs are connected to the proposed resonator. A filter with a 3-dB cut-off frequency at 4 GHz is designed, fabricated, and measured, and agreement between the measured and simulated results is achieved. The results show that a stopband bandwidth of 131% with a suppression level better than -20 dB is obtained while achieving a compact size with a wide stopband.