• Macromolecular Research
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• v.12 no.3
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• pp.316-321
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• 2004

We have performed copolymerizations of ethylene with 1-hexene using various ansa-metallocene compounds in the presence of the non-coordinative [CPh$_3$][B(C$\_$6/F$\_$5/)$_4$ion pair as a cocatalyst. The metallocenes chosen for this study are isospecific metallocene diamide compounds, rac-(EBI)Zr(NMe$_2$)$_2$ [1, EBI = ethylene-l ,2-bis(1-indenyl)], rac-(EBI)Hf(NMe$_2$)$_2$ (2), rac-(EBI)Zr(NC$_4$H$\_$8/)$_2$ (3), and rac-(CH$_3$)$_3$Si(1-C$\_$5/H$_2$-2-CH$_3$-4-$\^$t/C$_4$H$\_$9/)2 Zr(NMe$_2$)$_2$ (4), and syndiospecific metallocene dimethyl compounds, ethylidene(cyclopentadienyl)(9-fluorenyl) ZrMe$_2$ [5, Et(Flu)(Cp )ZrMe$_2$] and isopropylidence (cyclopentadienyl)(9-fluorenyl)ZrMe$_2$ [6, iPr(Flu)(Cp)ZrMe$_2$]. The copolymerization rate decreased in the order 4 ＞1-3＞2 ＞5＞6. The reactivity of I -hexene decreased in the order 2 ＞6＞1- 3-5＞ 4. We characterized the microstructure of the resulting poly(ethylene-co-l-hexene) by $\^$l3/C NMR spectroscopy and investigated various other properties of the copolymers in detail.

• Macromolecular Research
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• v.15 no.1
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• pp.31-38
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• 2007

Pentamethylcyclopentadienyltitanium trichloride, bis(cyclopentadienyl)titanium dichloride ($Cp_2TiCl_2$), and bis(pentamethylcyclopentadienyl)titanium dichloride were used in the polymerization of styrene without the aid of Group I-III cocatalysts. The properties of the resulting polymer indicated that polymerization was more controlled than in thermal polymerization. The kinetic studies indicated that a lower level of termination is present and that the polymer chain can be extended by adding an additional monomer. To elucidate the mechanism of polymerization, a series of experiments was performed. All results supported the involvement of a radical mechanism in the polymerization using $Cp_2TiCl_2$. The possibility of atom transfer radical polymerization (ATRP) mechanism was investigated by isolating the intermediate species. We could confirm the activation step from the reaction of 1-PEC1 with $Cp_2TiCl$ by detecting the coupling product of the generated active radicals. However, the reversible deactivation reaction competes with other side reactions, and it detection was difficult with our model system.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.222-222
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• 2006

New types of constrained geometry complexes comprising rigid silacycloalkyl group incorporated into the bridging position between cyclopentadienyl and amido functionalities were prepared. The catalytic activities of olefin polymerization were influenced by the change of exo-cyclic ring size on bridge-head silacycloalkyl unit. It has been noted that the activities of this unique series increase with increasing size of the silacycloalkyl bridge and reach the maximum in six-membered silacyclohexyl-bridged CGC complex. It is noteworthy that conformation of silacycloalkanes gives rise to enhanced catalytic activity of the titanium center although the cyclic ring and titanium center are far remoted from each other.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.113-113
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• 2011

Cobalt oxide 박막은 gas sensor, electro-chromic 소자 그리고 energy storage 소자등 광범위한 분야에서 연구되고 있으며 sputtering, CVD 그리고 electrochemical deposition 를 포함한 다양한 방법으로 증착할 수 있다. 최근에는 원자층 증착 방법을 이용한 cobalt oxide박막 증착이 연구되었는데, cyclopentadienyl계열의 전구체와 ${\beta}$-diketonate계열의 전구체를 이용하였다. 하지만 전구체의 낮은 증기압으로 인해 낮은 growth rate (약 0.02~0.05 nm/cycle)을 보였다. 본 연구에서는 증기압이 높은 전구체인 CCTBA (dicobalt hexacarbonyl tert-butylacetylene) 를 선정하여 원자층 증착 공정의 growth rate를 향상시키고자 하였다. 반응기체로는 O3을 사용하여 cobalt oxide 박막을 증착하였다. 반응기체의 주입시간 및 공정온도를 달리하여 시편을 증착한 결과 $80^{\circ}C$에서 0.1 nm/cycle로 기존의 보고된 growth rate보다 높은 수치를 얻을 수 있었다. 또한 증착된 cobalt oxide 박막내 조성분석과 I-V 측정 등을 이용하여 물리적, 전기적 특성을 규명하였다

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.131-132
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• 2000

We prepared Si emitters coated with a MOCVD $CoSi_2$ layer to improve the emission properties. The $CoSi_2$ layer was grown on Si field emitters in situ by reactive chemical-vapor deposition of cyclopentadienyl dicarbonyl cobalt at 600 ${\sim}$ $650^{\circ}C$. The $CoSi_2$ coated field emitters showed enhanced emission properties of current-voltage characteristics, which were due to the increase of emitting area from Fowler-Nordheim plot. And the emission current fluctuation decreased due to the chemically stable surface properties of $CoSi_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.251-251
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• 2013

고 유전 박막을 이용하여 초고집적 DRAM용 캐패시터를 만들고자 하는 연구가 전세계 메모리 반도체 산업계에 걸쳐 활발히 이루어지고 있다. 본 연구는 High-k의 precursor인 Tetrakis (EthylMethylAmino) Zirconium) TEMAZ와 새로운 전구체인 Tris (dimethylamino) cyclopentadienyl Zirconium) CpZr (DMA)3의 열 안정성과 증착 특성을 비교하였다. in-situ Fourier tramsform infrared spectroscopy (FTIR)을 통해 long-term 열안정성을 확인하였다. 증착과 동시에 자체개발한 FTIR-cell을 이용하여 Gas phase를 실시간으로 확인하였다. 증착 sample은SEM과 AFM을 통해 박막 특성 비교를 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.120.2-120.2
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• 2013

반도체 소자의 소형화로 신개념 화학증착공정 구현을 위한 장비와 화학증착소재의 개발이 활발이 연구되고 있다. 특히 증착소재의 물리적 화학적 특성을 파악하고 가장 적합한 소재를 선택하기 위한 연구도 변행되고 있다. 많은 연구자들이 소재 평가를 위해 가스크로마토그래피, 질량분석기, 적외선 분광기 등을 이용한 화학증착소재의 특성을 파악하기 위해 노력하고 있다. 하지만 실제 화학기상증착(Chemical Vapor Deposition)법과 원자층증착(Atomic Layer Deposition)법 공정에서 웨이퍼 표면에서의 화학증착소재의 흡착거동에 대한 연구는 거의 전무한 실정이다. 따라서 본 연구에서는 개선된 Attenuated Total Reflectance(ATR)분광계를 이용하여 표면에 흡착된 소재의 흡착거동에 대해 분석을 수행하였다. 평가에 사용된 화학증착소재는 C-Zr (Tris (dimethylamino) cyclopentadienyl zirconium)이며, Fourier Transform Infrared Spectroscopy (FT- IR)시스템 내에 설치된 ATR 분광계 표면에 흡착된 C-Zr 증착소재를 다양한 공정조건(온도 및 반응가스, 플라즈마 파워 등)에서의 거동 변화를 연구하였다.

• Environmental Engineering Research
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• v.12 no.5
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• pp.211-217
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• 2007

Polycyclic aromatic hydrocarbon growth from cyclopentadiene (CPD) pyrolysis was investigated using a laminar flow reactor operating in a temperature range of 600 to $950^{\circ}c$. Major products from CPD pyrolysis are benzene, indene and naphthalene. Formation of observed products from CPD is explained as follows. Addition of the cyclopentadienyl radical to a CPD $\pi$-bond produces a resonance-stabilized radical, which further reacts by one of three unimolecular channels: intramolecular addition, C-H bond $\beta$-scission, or C-C bond $\beta$-scission. The intramolecular addition pathway produces a 7-norbornenyl radical, which then decomposes to indene. Decomposition by C-H bond $\beta$-scission produces a biaryl intermediate, which then undergoes a ring fusion sequence that has been proposed for dihydrofulvalene-to-naphthalene conversion. In this study, we propose C-C bond $\beta$-scission pathway as an alternative reaction channel to naphthalene from CPD. As preliminary computational analysis, Parametric Method 3 (PM3) molecular calculation suggests that intramolecular addition to form indene is favored at low temperatures and C-C bond $\beta$-scission leading to naphthalene is predominant at high temperatures.

• Applied Science and Convergence Technology
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• v.24 no.4
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• pp.90-95
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• 2015

The adsorption behavior of tris (dimethylamino)-cyclopentadienyl-zirconium (Cp-Zr) precursor using an in-situ attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FT-IR) was studied. In attempt to improve the detection intensity of an adsorbed precursor, nanoparticles were uniformly distributed on the Ge ATR crystal surface employing the spray method. The absorption characteristics studies were carried out over the Ge crystal temperature in the range of $30{\sim}50^{\circ}C$. Upon increasing the temperature, a reduction of absorption was observed. Based on the peak intensities of ATR-FT-IR spectroscopy, higher-$ZrO_2$ absorption efficiency occurs when the nano-particles are utilized compared to pure Ge crystal.

• Electrical & Electronic Materials
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• v.28 no.2
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• pp.25-33
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• 2015

Ruthenium (Ru) thin films were grown on thermally-grown $SiO_2$ substrates by atomic layer deposition (ALD) using a sequential supply of four kinds of novel zero-valent Ru precursors, isopropyl-methylbenzene-cyclohexadiene Ru(0) (IMBCHDRu, $C_{16}H_{22}Ru$), ethylbenzen-cyclohexadiene Ru(0) (EBCHDRu, $C_{14}H_{18}Ru$), ethylbenzen-ethyl-cyclohexadiene Ru(0) (EBECHDRu, $C_{16}H_{22}Ru$), and (ethylbenzene)(1,3-butadiene)Ru(0) (EBBDRu, $C_{12}H_{16}Ru$) and molecular oxygen (O2) as a reactant at substrate temperatures ranging from 140 to $350^{\circ}C$. It was shown that little incubation cycles were observed for ALD-Ru processes using these new novel zero-valent Ru precursors, indicating of the improved nucleation as compared to the use of typical higher-valent Ru precursors such as cyclopentadienyl-based Ru (II) or ${\beta}$-diketonate Ru (III) metallorganic precursors. It was also shown that Ru nuclei were formed after very short cycles (only 3 ALD cycles) and the maximum nuclei densities were almost 2 order of magnitude higher than that obtained using higher-valent Ru precursors. The step coverage of ALD-Ru was excellent, around 100% at on a hole-type contact with an ultra-high aspect ratio (~32) and ultra-small trench with an aspect ratio of ~ 4.5 (top-opening diameter: ~ 25 nm). The developed ALD-Ru film was successfully used as a seed layer for Cu electroplating.