• Title/Summary/Keyword: Cyclohexane film

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1-Hydroxy-4-tosyloxy cyclohexane and 1,4-Ditosyloxy cyclohexane as Acid Amplifiers To Enhance the Photosensitivity of Positive-Working Photoresists (포지티브 포토레지스트의 감도 증진을 위한 산증식제로 1-Hydroxy-4-tosyloxy cyclohexane과 1,4-Ditosyloxy cyclohexane에 관한 연구)

  • 정연태;이은주;권경아
    • Journal of the Korean Graphic Arts Communication Society
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    • v.20 no.1
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    • pp.91-101
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    • 2002
  • An acid amplifier is defined as an acid-generating agent which is decomposed autocatalytically to produce new strongly acidic molecules in a non-liner manner, The addition of the acid amplifiers to conventional chemically amplified photoresists consisting of photoacid generators and acid-sensitive polymers result in the improvement of photosensitivity due to the amplified generation of catalytic acid molecules as a result of the decomposition of acid amplifiers. We synthesized and evaluated 1-hydroxy-4-tosyloxy cyclohexane(AA-1) and 1,4-ditosyloxy cyclohexane(Ah-2) as novel acid amplifiers. The acid amplifiers(AA-1, AA-2) showed reasonable thermal stability for resist processing temperature. As estimated by the sensitivity curve, tort-butyl methacrylate homopolymer(ptBMA) film doped with AA-1 or 2 exhibited much higher photosensitivity than ptBMA film without AA-1 or 2. And AA-1 showed higher effect than AA-2 on enhancing photosensitivity of ptBMA film.

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Synthesis and Characterization of Novel Acid Amplifiers with a Low Absorbance at 193 nm (193 nm에서 낮은 흡수도를 갖는 새로운 산 증식제의 합성 및 특성연구)

  • 소진호;정용석;최상준;정연태
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.8
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    • pp.806-811
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    • 2004
  • 1-Hydroxy-4-(2-naphthalenesulfonyloxy) cyclohexane(1), 1,4-di-(2-naphthalenesulfonyloxy) cyclohexane(2), 1-hydroxy-4-(2-thiophenesulfonyloxy) cyclohexane(3), 1,4-di-(2-thiophenesulfonyloxy) cyclohexane(4) were synthesized and evaluated for their performance as novel acid amplifiers for 193 nm photoresists. These acid amplifiers(1-4) showed reasonable thermal stability at the usual resist-processing temperature, 9$0^{\circ}C$-12$0^{\circ}C$. And estimated by the sensitivity curve, (1)-(4) enhanced the sensitivity of poly(tert-butyl methacrylate) film by 1.2-1.4 times, compared to poly(tert-butyl methacrylate) film whithout acid amplifiers, in the presence of a photoacid generator.

Characteristics of Organic Thin Film Transistors with Organic and Organic-inorganic Hybrid Polymer Gate Dielectric (유기물과 유무기 혼합 폴리머 게이트 절연체를 사용한 유기 박막 트랜지스터의 특성)

  • Bae, In-Seob;Lim, Ha-Young;Cho, Su-Heon;Moon, Song-Hee;Choi, Won-Seok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.12
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    • pp.1009-1013
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    • 2009
  • In this study, we have been synthesized the dielectric layer using pure organic and organic-inorganic hybrid precursor on flexible substrate for improving of the organic thin film transistors (OTFTs) and, design and fabrication of organic thin-film transistors (OTFTs) using small-molecule organic semiconductors with pentacene as the active layer with record device performance. In this work OTFT test structures fabricated on polymerized substrates were utilized to provide a convenient substrate, gate contact, and gate insulator for the processing and characterization of organic materials and their transistors. By an adhesion development between gate metal and PI substrate, a PI film was treated using $O_2$ and $N_2$ gas. The best peel strength of PI film is 109.07 gf/mm. Also, we have studied the electric characteristics of pentacene field-effect transistors with the polymer gate-dielectrics such as cyclohexane and hybrid (cyclohexane+TEOS). The transistors with cyclohexane gate-dielectric has higher field-effect mobility, $\mu_{FET}=0.84\;cm^2/v_s$, and smaller threshold voltage, $V_T=-6.8\;V$, compared with the transistor with hybrid gate-dielectric.

Corrosion Protection of Plasma-Polymerized Cyclohexane Films Deposited on Copper

  • Park, Z.T.;Lee, J.H.;Choi, Y.S.;Ahn, S.H.;Kim, J.G.;Cho, S.H.;Boo, J.H.
    • Journal of the Korean institute of surface engineering
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    • v.36 no.1
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    • pp.74-78
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    • 2003
  • The corrosion failure of electronic devices has been a major reliability concern lately. This failure is an ongoing concern because of miniaturization of integrated circuits (IC) and the increased use of polymers in electronic packaging. Recently, plasma-polymerized cyclohexane films were considered as a possible candidate for a interlayer dielectric for multilever metallization of ultra large scale integrated (ULSI) semiconductor devices. In this paper the protective ability of above films as a function of deposition temperature and RF power in an 3.5 wt.% NaCl solution were examined by polarization measurement. The film was characterized by FTIR spectroscopy and contact angle measurement. The protective efficiency of the film increased with increasing deposition temperature and RF power, which induced the higher degree of cross-linking and hydrophobicity of the films.

PLASMA POLYMERIZED THIN FILMS GROWN BY PECVD METHOD AND COMPARISON OF THEIR ELECTROCHEMICAL PROPERTIES

  • I.S. Bae;S.H. Cho;Park, Z. T.;Kim, J.G.;B. Y. Hong;J.H. Boo
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2003.10a
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    • pp.119-119
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    • 2003
  • Plasma polymerized organic thin films were deposited on Si(100) glass and Copper substrates at 25 ∼ 100 $^{\circ}C$ using cyclohexane and ethylcyclohexane precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 20∼50 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency (P$\_$k/), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest P$\_$k/ value of plasma polymerized ethylcyclohexane film (92.1% at 50 W) was higher than that of the plasma polymerized cyclohexane film (85.26% at 50 W), indicating inhibition of oxygen reduction. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the ethylcyclohexane films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C-V data measured at 1㎒. From the electrical property measurements such as I-V ana C-V characteristics, the minimum dielectric constant and the best leakage current of ethylcyclohexane thin films were obtained to be about 3.11 and 5 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$ and cyclohexane thin films were obtained to be about 2.3 and 8 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$.

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Application of Polycarbonate Diol Prepared with Carbon Dioxide in the Field of Waterborne Polyurethane (이산화탄소를 이용하여 제조된 폴리카보네이트 디올의 수분산 폴리우레탄에 응용)

  • Lim, Jae-Woo;Oh, Hyoung-Jin;Kim, Young-Jo;Jeong, Kwang-Eun;Yim, Jin-Heong;Ko, Young-Soo
    • Polymer(Korea)
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    • v.34 no.6
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    • pp.507-510
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    • 2010
  • Poly(cyclohexane carbonate) diol was synthesized by the alternating copolymerization of cyclohexene oxide and $CO_2$ over Cr based transition metal catalysts. The prepared PCCD was applied as a precursor for the preparation of waterborne polyurethane (PUD) in order to investigate an application field of carbon dioxide-based polycarbonate. The scratch resistance and thermal properties of PUDs, which was prepared with two kinds of polymeric diols (PCD and PCCD) were investigated. The scratch resistance and thermal decomposition temperature of PUD film prepared with PCCD is worse than those prepared with PCD, poly(hexamethylene carbonate) glycol. While, glass transition temperature of PUD film prepared with PCCD was higher than that prepared with PCD. It might be due to the rigid cyclohexane structure in the PCCD.

Characterization of In-Situ Film Thickness and Chamber Condition of Low-K PECVD Process with Impedance Analysis

  • Kim, Dae Kyoung;Jang, Hae-Gyu;Kim, Yong-Tae;Kim, Hoon-Bae;Chae, Hee-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.461-461
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    • 2010
  • For a low dielectric constant inter-metal dielectric application, the low-k SiCOH film with a dielectric constant of 2.8-3.2 has been deposited by plasma-enhanced chemical vapor deposition with decamethylcyclopentasiloxane, cyclohexane, and helium which is carrier gas. In this work, we investigated chemical deposition rate, dielectric constant, characterization of plasma polymer films according to temperature(25C-200C) of substrate and change of component concentration. We measured impedance by using V-I prove during process. From experimental result, deposition rate decrease with increasing temperature. Through real time impedance analysis of chamber, we find corelation between film thickness and impedance by assuming equivalent circuit.

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Characteristics of Plasma Polymerized Low-dielectric Constant SiCOH Films Deposited with Tetrakis(trimethylsilyloxy)silane and Cyclohexane Precursors

  • Kim, Hoonbae;Oh, Hyojin;Lee, Chaemin;Jung, Donggeun;Boo, Jin-Hyo
    • Bulletin of the Korean Chemical Society
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    • v.35 no.10
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    • pp.2941-2944
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    • 2014
  • The electrical and mechanical properties of the plasma polymerized low dielectric constant SiCOH films were investigated. The SiCOH films were produced with tetrakis(trimethylsilyloxy)silane and cyclohexane as precursors by using a plasma enhanced chemical vapor deposition. When the deposition plasma powers were changed from 10 to 50 W, the relative dielectric constant of the SiCOH film increased from 2.09 to 2.76 and their hardness and elastic modulus were changed from 1.6 to 5.6 GPa and from 16 to 44 GPa, respectively. After thermal annealing at $500^{\circ}C$, the annealed SiCOH films showed relative dielectric constants of 1.80-2.97, a hardness of 0.45-0.6 GPa and an elastic modulus of 6-7 GPa. And then, the chemical structures of as-deposited and annealed SiCOH films were analyzed by using Fourier transform infrared spectroscopy.

Synthesis of High Refractive Spiroheterocyclic Derivatives Through Thioacetalization of Multi-Carbonyl Compounds

  • Ye, Ji-Myoung;Maheswara, Muchchintala;Do, Jung-Yun
    • Bulletin of the Korean Chemical Society
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    • v.33 no.8
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    • pp.2494-2498
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    • 2012
  • Preparation of several new spirocyclic mercapto derivatives is described. Thiol protection on multi-carbonyl compounds allows of high sulfur content necessary to induce high refractive index. Condensation of 1,3-dimercapto-2-propanol and cyclohexanone followed by successive oxidation and thioacetalization affords a dispirocycle with four sulfurs. Selective S,S-protection of cyclohexane-1,4-dione is achieved with 1,3-dimercapto-2-propanol and 2,3-dimercapto-1-propanol to provide dispirocycles with four sulfurs. Olefine-oxidation of norbornene gives a useful dialdehyde intermediate which is transformed to 1,3-dithiolane for a linearly-bound-cyclic molecule. Refractive index of linearly-bound-cycles was below 1.60 and dispirocycles exhibited high refractive index of 1.57-1.69.

A Study for the Armor of General Jung, Gong-chung (정 공청 장군 유품에 대한 연구)

  • 배상경
    • Journal of the Korean Home Economics Association
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    • v.35 no.2
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    • pp.111-122
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    • 1997
  • This thesis researched for the conservation of a suit of armor, one glove, one belt, and on knife case that General Jung, Gong-chung had been worn in the early 17 th centuries. The armor was Doojung-kab for the battle. It was made of two kinds of fabrics, one of them was silk satin's outer fabrics, the other was quilt4d cotton's lining. as the armor was made of silk and cotton, it was treated by dry solvents and dry soap. In the dry cleaning method, used solvents were n-hexane, cyclohexane, benzene, and n-decane. the volume ratio of dry soap was 120: 1. The reaction temperature was 30℃, and reaction time was 10 to 30 minutes per one turn. The glove, belt and knife case were made with leather. They were dipped on the polyethyleneglycol 150 saturated solution during 24hours at 50℃ and then dried naturally. They were washed by toluene to remove the untreated pp.E.G. on the surfaces. It was sterilized by two gases of methylenebromide and ethyleneoxied. For the conservation, it was packed thoroughly by ? polyethylene film sheet without air.

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