• 한국음향학회지
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• 제20권6호
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• pp.57-65
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• 2001

본 연구에서는 자왜형 초음파 트랜스듀서의 도파봉을 이론적으로 해석하고 그 타당성을 유한요소 해석법으로 검증하였으며 두 해석법의 결과는 서로 잘 일치하였다. 본 연구에서 유도한 이론적 해석법은 유한요소 해석법에 비해서 빠른 시간 내에 주어진 주파수를 만족시키는 도파봉 길이를 결정할 수 있는 반면, 차단 주파수 (cut-off frequency)를 넘어서는 범위에서만 해석이 가능하다는 단점을 가진다. 해석결과 현수선 도파봉 (catenoidal horn)이 지수함수 도파봉 (exponential horn)에 비해서 더 큰 변위 증폭을 가져왔고, 현수선 형상 길이가 짧을수록 더욱 큰 변위로 증폭시킬 수 있었다. 해석 결과를 바탕으로 공기중에서 공진 주파수 20.8 ㎑를 가지는 자왜형 초음파 트랜스듀서를 제작하여 성능을 측정하였다. 자왜형 트랜스듀서는 수중에서 19.3㎑의 공진 주파수와 199 dB의 최대 SPL (Sound Pressure Level)을 가지고 무지향성의 특성을 보였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권4호
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• pp.178-184
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• 2005

In this paper, using diplexer structure and varactor diode controlled by reverse bias voltage for diplexer switch gives possibilities to improve isolation and current characteristics. 1 have newly designed switch with high isolation by application varactor diode corresponding to capacitor of diplexer. The low-pass filter for proposed tunable diplexer passes the microwave signal in the bandwidth for wireless cellular network systems and high-pass filter passes it in the bandwidth for wireless personal communication services (PCS) network systems. As the capacitance of the low-pass filter increases, the cut-off frequency can be moved to low frequency, so that the switch is on state in cellular bandwidth and off state in the PCS bandwidth, in contrast to, as the capacitance for attenuation characteristic of high-pass filter increases, it can be moved to high frequency, so that the switch is off state and on state in the cellular bandwidth. it is possible to improve isolation and current consumption characteristics by application diplexer design methods and varactor diode. 1 expect that the tunable diplexer circuit and design methods should be able to find applications on MMIC and low temperature copired ceramic (LTCC).

• 전자공학회논문지A
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• 제31A권9호
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• pp.104-113
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• 1994

We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

• 전자공학회논문지A
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• 제32A권1호
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• pp.129-137
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• 1995

AlGaAs/GaAs HBTs have been fabricated using SABM (Self-Aligned Base Metal) process technique. The mesa type HBTs were fabricated through following steps: isolation implant, wet etching, metal lift-off, and airbridge interconnection process. The fabricated HBTs with 2umx10um size emitter showed a common emitter current gain of 10 at a collector current density of Jk=100kA/cm$^{2}$, a breakdown volgate BVCEO of 8V, and the ideality factors of base and collector junctions of 1.6 and 1.1, respectively. On-wafer S-Parameter measurement at 0.5~18GHz has been made for the characterization of the common emitter HBTx with a 2umx10um size emitter. The extrapolated current gain cut-off frequency of ft=30GHz and maximum oscillation frequency of fmax=23 GHz were obtained at a collector current density of Jc=70kA/cm$^{2}$. Small signal HBT equivalent circuit was extracted from the S-Parameter data.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.189-192
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• 2001

We have studied fabrication processes that form asymmetric $\Gamma$-gate with a 0.1${\mu}{\textrm}{m}$ gate length in MMIC's(Monolithic Microwave Integrated Circuits). Asymmetric $\Gamma$-gate was fabricated using mixture of PMMA and MCB. Thus pseudomorphic high electron mobility transistor (PHEMT's) with 0.1${\mu}{\textrm}{m}$ gate length was fabricated via several steps such as mesa isolation, metalization, recess, passivation. PHEMT's has the -1.75 V of pinch-off voltage (Vp), 63 mA of drain saturation current(Idss and 363.6 mS/mm of maximum transconductance (Gm) in DC characteristics and current gain cut-off frequency of 106 GHz and maximum frequency of oscillation of 160 GHz in RF characteristics.

• 대한유전성대사질환학회지
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• 제15권3호
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• pp.110-117
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• 2015

All infants should be screened for phenylketonuria (PKU) within the three days of life, in order to allow timely dietary intervention to protect children with PKU from neurologic damage in Korea. A commonly used cut-off level for diagnosis of PKU is $240{\mu}mol/L$ (4 mg/dL). Up to 2% of cases of hyperphenylalaninemias (HPA) detected by the screening test will account for a disorder of $BH_4$ metabolism. Therefore, analysis of blood or urinary pterins is essential, backed up with measurement of DHPR activity, as this allows differentiation of $BH_4$ disorders. A $BH_4$ loading test and measurement of neurotransmitters in CSF provide further important information to the severity of $BH_4$ deficiency and $BH_4$ loading test can detect patients with $BH_4$ deficiency and $BH_4$ responsive PKU. Several protocols for $BH_4$ loading test have been described, involving treatment with $BH_4$ for periods ranging from 1 day to 1 month, and using doses of $BH_4$ of 10-20 mg/kg. There is general agreement that a reduction on blood phenylalanine of at least 30% in response to $BH_4$ loading indicates a clinically significant effect, although in some tests a lower cut-off value may be defined for individual patients, or no specific cut-off value is proposed. The frequency of $BH_4$ responsiveness is highest in patients with mild HPA and mild to moderate PKU resulting from PAH mutations with residual activity.

• 대한통합의학회지
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• 제10권3호
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• pp.107-117
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• 2022

Purpose : The purpose of this study was to establish a model of the predictive factors for success or failure of examinees undertaking the Korean physical therapist licensing examination (KPTLE). Additionally, we assessed the pass/fail cut-off point. Methods : We analyzed the results of 10,881 examinees who undertook the KPTLE, using data provided by the Korea Health Personnel Licensing Examination Institute. The target variable was the test result (pass or fail), and the input variables were: sex, age, test subject, and total score. Frequency analysis, chi-square test, descriptive statistics, independent t-test, correlation analysis, binary logistic regression, and receiver operating characteristic (ROC) curve analyses were performed on the data. Results : Sex and age were not significant predictors of attaining a pass (p>.05). The test subjects with the highest probability of passing were, in order, medical regulation (MR) (Odds ratio (OR)=2.91, p<.001), foundations of physical therapy (FPT) (OR=2.86, p<.001), diagnosis and evaluation for physical therapy (DEPT) (OR=2.74, p<.001), physical therapy intervention (PTI) (OR=2.66, p<.001), and practical examination (PE) (OR=1.24, p<.001). The cut-off points for each subject were: FPT, 32.50; DEPT, 29.50; PTI, 44.50; MR, 14.50; and PE, 50.50. The total score (TS) was 164.50. The sensitivity, specificity, and the classification accuracy of the prediction model was 99 %, 98 %, and 99 %, respectively, indicating high accuracy. Area under the curve (AUC) values for each subject were: FPT, .958; DEPT, .968; PTI, .984; MR, .885; PE, .962; and TS, .998, indicating a high degree of fit. Conclusion : In our study, the predictive factors for passing KPTLE were identified, and the optimal cut-off point was calculated for each subject. Logistic regression was adequate to explain the predictive model. These results will provide universities and examinees with useful information for predicting their success or failure in the KPTLE.

• 대한전기학회논문지:전력기술부문A
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• 제53권8호
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• pp.432-437
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• 2004

Since the characteristic frequency is decreased in proportion to the fault distance, the characteristic frequency component may be insufficiently eliminated by a low-pass filter on a long transmission line. In order to set a standard for the cut-off frequency of the low-pass filter, this paper proposes a method for obtaining the characteristic frequencies due to line faults. The application results of the proposed method are presented for line to ground (LG) faults and line to line (LL) faults on a 345 kV 200 km overhead transmission line. The EMTP is used to generate fault signals under different fault locations and fault inception angles. By comparison between the characteristic frequencies obtained from the proposed method and the EMTP simulation, it is shown that the proposed method accurately obtains the characteristic frequency.

• 대한안전경영과학회지
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• 제17권3호
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• pp.377-381
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• 2015

For the first time, PLL frequency synthesizer using DDS was adapted for the data link communication system which should fast transmit and receive each other with the correct information and fast Hopping System. It is inevitable to lost the synchronization by slow lock time about PLL and no cut off the noise. This paper propose the design of PLL frequency synthesizer which can make 800MHz frequency range. The PLL frequency synthesizer has three high qualities those are frequency accuracy, fast lock time and outstanding phase noise.

• 한국음향학회지
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• 제13권6호
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• pp.50-59
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• 1994

유리판과 단일방향(unidirectional) 탄소섬유 강화 복합재료(CFRP)판의 표면에서 연필심을 부러뜨려 발생된 과도적 탄성파를 음원으로부터 멀리 떨어진 서로 다른 위치에 둔 두개의 탐촉자로 검출하였다. 탐촉자에 검출된 과도적 신호의 스펙트럼 분석에 의해 판에서 pulse 형태로 발생된 신호는 Lamb파 분산관계를 따르며 전파하고, 유리판과 단일방향 CFRP판에서의 과도적 신호는 최저 대칭$(S_{0})$, 1차 대칭$(S_{1})$, 1차 비대칭$(A_{l})$ 모드의 최대 군속도 주변의 성분들로 형성되었다. 이러한 최대 군속도 주변 성분은 분산이 비교적 적기 때문에 과도적 신호의 초기부분은 크게 변화되지 않았으며, $A_{1}$ 모드 단절 (cut-off)주파수 이하 영역의 $S_{0}$ 모드가 가장 빠른 군속도로 전파되고 과도적 신호 형성에 크게 기여하는 모드이었다.