• Title/Summary/Keyword: Cut-off Frequency

Search Result 406, Processing Time 0.027 seconds

Non-adrenergic non-cholinergic relaxation and contraction in circular smooth muscle of bovine reticular groove (소(우(牛)) 식도구 윤상근의 비아드레날린 비콜린성 이완 및 수축)

  • Kang, Tong-mook;Han, Ho-jae;Yang, Il-suk
    • Korean Journal of Veterinary Research
    • /
    • v.35 no.2
    • /
    • pp.279-285
    • /
    • 1995
  • To characterize non-adrenergic non-cholinergic(NANC) nerve mediated contractile responses in circular smooth muscle of bovine reticular groove, we investigated NANC relaxation and contraction induced by electric field stimulation to enteric nerves. In the presence of atropine($1{\mu}M$) and guanethidine($50{\mu}M$), electric field stimulation at frequency of 1 to 16Hz(square pulses, 0.5ms duration, 70V) evoked clear-cut relaxations through stimulations. Transient 'rebound contraction' was occured when the stimulus was switched off. All of the responses (relaxation and rebound contraction) were dose-dependently blocked by Nw-nitro-$_{\small{L}}$-arginine methyl ester(L-NAME), an inhibitor of nitric oxide synthesis, and methylene blue, and inhibitor of soluble guanylate cyclase. Tetraethyl ammonium(TEA), a potassium channel blocker, did not block the NANC relaxations.

  • PDF

Studies on fabrication of 0.5$mu$m GaAs power MESFET's using a conventional UV lithography and angle evaporations (Conventional UV 리소그라피와 경사각증착에 의한 0.5$mu$m 전력용 CaAs MESFET 제작에 관한 연구)

  • 이일형;김상명;윤진섭;이진구
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.32A no.12
    • /
    • pp.130-135
    • /
    • 1995
  • GaAs power MESFET's with 0.5 .mu.m gate length using a conventional UV lithography and angle evaporations are fabricated and then DC and RF characteristics are measured and carefully analyzed. The 0.5$\mu$m GaAs power MESFET's are fabricated on epi-wafers which have an undoped GaAs layer inbetween n+ and n GaAs layers grown by MBE, and by the processes such as an image reversal(IR), air-bridge, and our developed 0.5 .mu.m gate fabrication techniques. The total gate widths of the fabricated 0.5$\mu$m GaAs power MESFETs are 0.6-3.0 mm, the current saturation of them 80-400 mA, the maximum linear and RF output power of them 60-265 mW. The current gain cut-off frequencies for the 0.5$\mu$m GaAs power MESFETs varies 13-16 GHz. For the test frequency of 10 GHz the maximum unilateral transducer power gains and the power added efficiencies of the GaAs power devices are 7.0-2.5 dB and 35.68-30.76 %, respectively.

  • PDF

Partial Discharge Location Method using Group Velocity Difference of Modes in a Electromagnetic Partial Discharge Signal in Gas Insulated Bus (가스절연모선(GIB)에서 전자파 방전신호의 모드별 군속도 차이를 이용한 방전위치 산정기법)

  • Goo, Sun-Geun;Ju, Hyoung-Jun;Park, Ki-Jun;Han, Ki-Seon;Yoon, Jin-Yul
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.56 no.12
    • /
    • pp.2184-2188
    • /
    • 2007
  • We developed a novel method of partial discharge(PD) location based on the fact that the waveform of PD signal propagate along the GIB (Gas Insulated Bus) is composed of several modes of electromagnetic wave with different group velocities and cut-off frequencies. From the PD waveform, measured at a broadband PD sensor attached on the GIB, we could derive arrival time and frequency components of different modes using the short term Fourier transform or etc. After the group velocities of different modes are calculated, the location of the PD source could be estimated. To show the effectiveness of this new locating method in a real on site application, we used this method to locate the position of a PD source at a 76 m long 345 kV GIB substation. The estimated location of the PD source using the method proposed above was in good agreement with the actual location found from the inspection result of internal component in the GIB with 2.4% of the estimation error.

Common-Mode Suppression Balanced Filter based on Composite Right/Left-Handed Transmission Line (CRLH 전송선로를 이용한 공통 모드 억압 평형 필터)

  • Kim, Young;Yun, Jeong-Ho;Yoon, Young-Chul
    • Journal of Advanced Navigation Technology
    • /
    • v.15 no.4
    • /
    • pp.571-577
    • /
    • 2011
  • This paper presents a novel balanced filter design based on a metamaterial structure applicable to differential-mode excitation. The metamaterial structure is based on a unit-cell which under a differential-mode excitation behaves like composite right/left-handed(CRLH) metamaterial with filter characteristics. In contrast, the metamaterial unit-cell is below cut-off under a common-mode excitation. Experimental results are used to verify the proposed metamaterial's differential-mode characteristics. The metamaterial is fabricated with a balanced filter design resulting in an operating frequency range of 960~1000 MHz with a insertion loss of 4.1 dB.

High Precise Measurement of Grid-Connected Inverter using DFT (DFT를 이용한 계통연계 인버터 시스템의 고정밀 계측)

  • Lee, Sang-Hyeok;Kang, Feel-Soon;Lee, Sang-Hun;Cho, So-Eog;Lee, Tae-Won;Park, Sung-Jun
    • The Transactions of the Korean Institute of Power Electronics
    • /
    • v.17 no.2
    • /
    • pp.93-98
    • /
    • 2012
  • A precise measurement of the grid voltage is one of the essential techniques, which is required to connect a renewable energy to the grid. In general, when a filter is used to eliminate unnecessary harmonics and noises, a signal is distorted by phase delay, amplitude attenuation, and other distortions. And the response characteristic of a controller is directly affected by bandwidth of cut-off frequency of the filter. To alleviate this problems, we propose an effective algorithm based on DFT(Discrete Fourier Transform) instead of approaching the filter application. The proposed algorithm ensures high precise measurement of the grid voltage because it can extract the fundamental and harmonics from the raw signal without any distortions. The high performance of the proposed algorithm is verified by PSIM simulation and experiments of Grid-Connected VSI.

Validity of Self-reported Smoking Using Urinary Cotinine among Vocational High School Students

  • Park, Soon-Woo;Kim, Jong-Yeon
    • Journal of Preventive Medicine and Public Health
    • /
    • v.42 no.4
    • /
    • pp.223-230
    • /
    • 2009
  • Objectives : This study was conducted to validate self-reported smoking among high school students using urinary cotinine. Methods : A self report of smoking behavior was collected together with urine sample for cotinine analysis from 130 male and female students in two vocational high school students in November, 2007. Validity and agreement between self-reported smoking and urinary cotinine was analyzed with STATA 9.0 for different definitions of current smokers, and frequent and daily smokers. Urinary cotinine concentration was measured by the DRI Cotinine Assay for urine (Microgenics Corp., Fremont, CA) on Toshiba 200FR. The cut-off point of urinary cotinine was 50 ng/dl. Results : The concentrations of urinary cotinine were significantly different according to the frequency and amount of smoking. Sensitivity and specificity was 90.9% and 91.8% respectively, and the Cohen s kappa value was 0.787 among the current smokers who smoked at least one day during one month preceding the survey. The comparable high sensitivity, specificity, and kappa value were shown also among the other definitions of current smokers, that is, subjective smokers, and weekly smokers. Conclusions : The results showed the high validity of self-reported smoking among high school students. However, due to the small sample size and limitation of the participants, it is cautious to generalize the results to overall high school students.

Polysilicon-emitter, self-aligned SiGe base HBT using solid source molecular beam epitaxy (고상원 분자선 단결정 성장법을 이용한 다결정 실리콘 에미터, 자기정렬 실리콘 게르마늄 이종접합 쌍극자 트랜지스터)

  • 이수민;염병렬;조덕호;한태현;이성현;강진영;강상원
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.32A no.2
    • /
    • pp.66-72
    • /
    • 1995
  • Using the Si/SiGe layer grown by solid source molecular beam epitaxy(SSMBE) on the LOCOS-patterned wafers, an emitter-base self-aligned hterojunction biplar transistor(HBT) with the polysilicon-emitter and the silicon germanium(SiGe) base has been fabricated. Trech isolation process, planarization process using a chemical-mechanical poliching, and the selectively implanted collector(SIC) process were performed. A titanium disilicide (TiSi$_{2}$), as a base electrode, was used to reduce an extrinsic base resistance. To prevent the strain relaxation of the SiGe epitaxial layer, low temperature (820${^\circ}C$) annealing process was applied for the emitter-base junction formation and the dopant activation in the arsenic-implanted polysilicon. For the self-aligned Si/SiGe HBT of 0.9${\times}3.8{\mu}m^{2}$ emitter size, a cut-off requency (f$_{T}$) of 17GHz, a maximum oscillation frequency (f$_{max}$) of 10GHz, a current gian (h$_{FE}$) of 140, and an emitter-collector breakdown voltage (BV$_{CEO}$) of 3.2V have been typically achieved.

  • PDF

Optimization of Wavefront Coding Phase Mask Applied to 5X-40X Micro-Objectives Simultaneously

  • Liu, Jiang;Miao, Erlong;Sui, Yongxin;Yang, Jianghuai
    • Journal of the Optical Society of Korea
    • /
    • v.19 no.5
    • /
    • pp.487-493
    • /
    • 2015
  • A wavefront coding (WFC) technique provides an extension of the depth of field for a microscopy imaging system with slight loss of image spatial resolution. Through the analysis of the relationship between the incidence angle of light at the phase mask and the system pupil function, a mixing symmetrical cubic phase mask (CPM) applied to 5X-40X micro-objectives is optimized simultaneously based on point-spread function (PSF) invariance and nonzero mean values of the modulation transfer function (MTF) near the spatial cut-off frequency. Optimization results of the CPM show that the depth of field of these micro-objectives is extended 3-10 times respectively while keeping their resolution. Further imaging simulations also prove its ability in enhancing the defocus imaging.

A Self-Consistent Semi-Analytical Model for AlGaAs/InGaAs PMHEMTs

  • Abdel Aziz, M.;El-Banna, M.;El-Sayed, M.
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.2 no.1
    • /
    • pp.59-69
    • /
    • 2002
  • A semi-analytical model based on exact numerical analysis of the 2DEG channel in pseudo-morphic HEMT (PMHEMT) is presented. The exactness of the model stems from solving both Schrodinger's wave equation and Poisson's equation simultaneously and self-consistently. The analytical modeling of the device terminal characteristics in relation to the charge control model has allowed a best fit with the geometrical and structural parameters of the device. The numerically obtained data for the charge control of the channel are best fitted to analytical expressions which render the problem analytical. The obtained good agreement between experimental and modeled current/voltage characteristics and small signal parameters has confirmed the validity of the model over a wide range of biasing voltages. The model has been used to compare both the performance and characteristics of a PMHEMT with a competetive HEMT. The comparison between the two devices has been made in terms of 2DEG density, transfer characteristics, transconductance, gate capacitance and unity current gain cut-off frequency. The results show that PMHEMT outperforms the conventional HEMT in all considered parameters.

Propagation Characteristics of Picosecond Gaussian Pulses in Coplanar Waveguides using Time Domain Measurement (시간영역 측정을 이용한 CPW에서 가우시안 펄스 전송 특성)

  • 이승엽;신용섭
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.14 no.11
    • /
    • pp.1143-1148
    • /
    • 2003
  • The distortion of picosecond pulses caused by dispersion as it propagates along microstripline and CPW(Coplanar waveguide) is investigated and measured using time domain measurement. Especially, this study presents that the distortion of these lines is analyzed and compared considering the relation between the dispersion effect and cut-off frequency(f$\_$TE/) of fundamental TE mode for the substrate of line. To verify theoretical results, several samples of 50 $\Omega$ lines are fabricated on the two kind of substrates with the different values of f$\_$TE/. The propagation characteristics of picosecond Gaussian pulse on thess lines are simply measured using VNA(Vector Network Analyzer) with the time-domain analysis function.