• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.744-746
• /
• 2003

A ZnO varistor with reference voltage 250V/mm was fabricated through the control of particle size in slurry and the variation of sintering conditions. It was found that to measure the flatness of the V-I characteristic curve in the small-current region and the flatness of the V-I characteristic curve in a large-current region was improved nonlinearity of the fabricated ZnO varistor. According to the IEC 60099-4 was measured the accelerated aging test and high current test of the distribution class surge varistor which is excellent in respect to the property of ZnO varistor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.9
• /
• pp.870-875
• /
• 2005

We measured the optogalvanic signal and discharge voltage-current(V-I) curve under the two different discharge conditions with different buffer gases, Ar, and Ne. When the Gd was used as a cathode material at low discharge current less than 10mA, a significant change was observed in the current-voltage curve. Time resolved optogalvanic signal measurement were measured by the diode laser of which wavelengths correspond to metastable transition line of these gases (Ar, Ne). From these measurements, we found that the characteristics of the V-I curve strongly depend on the Penning ionization process.

• KIEE International Transactions on Electrophysics and Applications
• /
• v.2C no.5
• /
• pp.258-261
• /
• 2002

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.23 no.1
• /
• pp.59-68
• /
• 2009

Fuel cell generators as the distributed generation system with a few hundred watt$\sim$a few hundred kilowatt capacity, can supply the high quality electric power to user as compared with conventional large scale power plants. In this paper, PEMFC(polymer electrolyte membrane fuel cell) generator as micro-source is modelled by using PSIM simulation software and DSP based fuel cell hardware simulator based on the PSIM simulation model is implemented. The relation of fuel cell voltage and current(V-I curve) is linearized by first order function on the ohmic area in voltage-current curve of fuel cell. The implemented system is composed of a PEMFC hardware simulator, an isolated full bridge dc boost converter, and a 60[Hz] voltage source PWM inverter. The voltage-current-power(V-I-P) characteristics of the implemented fuel cell hardware simulator are verified in load variation and transient state and the 60[Hz] output voltage sinusoidal waveform of the PWM inverter is investigated under the resistance load and nonlinear diode load.

• The Korean Journal of Physiology
• /
• v.17 no.1
• /
• pp.1-11
• /
• 1983

1) The two microelectrode method was used to voltage clamp small preparations of rabbit sinoatrial node. The kinetics of hyperpolarization activated inward current, $i_f$ were analysed. 2) The hrperpolarization pulses activated $i_f$ current in the presence of $10^{-7}g/ml$ TTX and 2 mM $Mn^{2+}$. The activation range was in between -45 mV to -75 mV. The current magnitude was increased and time course was faster by strong hyperpolarization pulses. 3) Standard envelope tests indicated that this current is exponentially controlled by single gate. 4) Semilogarithmic plot of $i_f$ activation versus time was found to be linear in the activation range. The decrease in current magnitude and the shifts in activation curve and rate constants curve to the hyperpolarizing direction were obtained with $Ba^{2+}$, indicating that $Ba^{2+}$ shifts the voltage dependence of the gating kinetics, were partially reversed by 24 mM $K^+$.

• Progress in Superconductivity and Cryogenics
• /
• v.15 no.3
• /
• pp.9-12
• /
• 2013

Current-voltage characteristic models of superconducting material are suggested by many researchers. These current-voltage characteristic models are important because they can be used for design or simulation of superconductor devices. But widely used current-voltage models of superconductor wire still have some limitations. For example, a standard E-J power model has no parameters related with stabilizer's resistance in superconductor wire. In this paper, a current-voltage characteristic modeling method for high temperature superconductor (HTS) tape with considering the effect of stabilizer is introduced. And a current-voltage characteristic of a HTS tape is measured under different stabilizer conditions. Those measured current-voltage characteristics of the HTS tape modeled with proposed modeling method and the modeling results are compared.

• Electrical & Electronic Materials
• /
• v.8 no.2
• /
• pp.176-183
• /
• 1995

The present work is concerned with the switching conduction characteristics of PI LB films in metal insulator metal sandwiches. By applying various DC voltage bias to MIM junctions, conduction characteristics of junctions can be changed between the high-voltage low-current(off) condition, the low-voltage high-current (on) condition and the medium(mid) condition. Switching conduction characteristics can be also observed in MIM junctions employing some aromatic compounds as insulators. Switching conduction characteristics is assumed to be owing to the existence of aromatic rings, space charge in films, impurities on metal-insulator interface, and difference in work functions of base and top electrodes metal. To study the conduction process of on, off, and mid conductions, we measured I-V, d$^{2}$V/d I$^{2}$-V characteristics of junctions with several different top electrodes under various temperatures. Small conductance changes of junctions can be measured by observing the second derivative, d$^{2}$V/dI$^{2}$, of I-V curve. A dynamical technique is used to get the second derivatives. That is, a finite modulation of the current is applied to the junctions and the second harmonic of the voltage is detected.

• Korean Journal of Materials Research
• /
• v.24 no.7
• /
• pp.375-380
• /
• 2014

Solar cells exhibit different power outputs in different climates. In this study, the temperature dependence of open-circuit voltage(V-oc), short-circuit current(I-sc), fill factor(FF) and the efficiency of screen-printed single-crystal silicon solar cells were studied. One group was fabricated with homogeneously-doped emitters and another group was fabricated with selectively-doped emitters. While varying the temperature (25, 40, 60 and $80^{\circ}C$), the current-voltage characteristics of the cells were measured and the leakage currents extracted from the current-voltage curve. As the temperature increased, both the homogeneously-doped and selectively-doped emitters showed a slight increase in I-sc and a rapid degradation of V-oc. The FF and efficiency also decreased as temperature increased in both groups. The temperature coefficient for each factor was calculated. From the current-voltage curve, we found that the main cause of V-oc degradation was an increase in the intrinsic carrier concentration. The temperature coefficients of the two groups were compared, leading to the idea that structural effects could also affect the temperature dependence of current-voltage characteristics.

• 한국초전도학회:학술대회논문집
• /
• v.9
• /
• pp.233-236
• /
• 1999

To investigate the effect of interference current between pairs and quasi-particles, we have calculated the change I-V characteristic curve of resistively and capacitively shunted Josephson junction with external microwave by simulation of modified Stewart-McCumber model. Such rf-induced constant-voltage steps and the immunity against to noise were found to be changed in the presence of interference current.

• 한국태양에너지학회:학술대회논문집
• /
• 2011.11a
• /
• pp.278-281
• /
• 2011

This system can predict the maximum output about all illumination levels so that the PV system designer can design the system having the best efficiency. For the output prediction exact about the solar cell, that is the device the basis most in the PV system, the basis has to be in order to try this way. The solution based on Lambert W-function are presented to express the transcendental current-voltage characteristic containing parasitic power consuming parameters like series and shunt resistances. A simple and efficient method for the extraction of a single current-voltage (I-V) curve under the constant illumination level is proposed. With the help of the Lambert W function, the explicit analytic expression for I is obtained. And the explicit analytic expression for V is obtained. This analytic expression is directly used to fit the experimental data and extract the device parameters. The I-V curve of the solar cell was expressed through the modeling using Lambert W-function and the numerical formula where there is the difficulty could be logarithmically expressed This method expresses with the I-V curve through the modeling using Lambert W-function which adds other loss ingredients to the equation2 as to the research afterward. And the solar cell goes as small and this I-V curve can predict the power penalty in the system unit.