• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.744-746
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• 2003

A ZnO varistor with reference voltage 250V/mm was fabricated through the control of particle size in slurry and the variation of sintering conditions. It was found that to measure the flatness of the V-I characteristic curve in the small-current region and the flatness of the V-I characteristic curve in a large-current region was improved nonlinearity of the fabricated ZnO varistor. According to the IEC 60099-4 was measured the accelerated aging test and high current test of the distribution class surge varistor which is excellent in respect to the property of ZnO varistor.

• 한국전기전자재료학회논문지
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• 제18권9호
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• pp.870-875
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• 2005

We measured the optogalvanic signal and discharge voltage-current(V-I) curve under the two different discharge conditions with different buffer gases, Ar, and Ne. When the Gd was used as a cathode material at low discharge current less than 10mA, a significant change was observed in the current-voltage curve. Time resolved optogalvanic signal measurement were measured by the diode laser of which wavelengths correspond to metastable transition line of these gases (Ar, Ne). From these measurements, we found that the characteristics of the V-I curve strongly depend on the Penning ionization process.

• KIEE International Transactions on Electrophysics and Applications
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• 제2C권5호
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• pp.258-261
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• 2002

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

• 조명전기설비학회논문지
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• 제23권1호
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• pp.59-68
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• 2009

분산진원으로서 연료전지 발전장치는 100w부터 수백[kw]의 용량을 가지며 종전의 대규모 전력설비와 비교하여 높은 신뢰도를 갖는 고품질의 전력을 공급할 수 있다. 본 연구에서는 소형 분산전원으로서 PEMFC(polymer electrolyte membrane fuel cell)연료전지 발전장치에 대한 PSIM(power electronics simulation tool) 모델을 설정하고 이를 바탕으로 DSP(digital signal processor)기반의 연료전지 하드웨어 시뮬레이터를 구현하였다. 연료전지 전류와 출력전압과의 관계는 연료전지의 전압-전류(V-I) 곡선 중 ohmic영역에서 1차 함수로 간략화 하였다. 구현된 시스템은 PEMFC 하드웨어 시뮬레이터, 절연형 풀 브리지 직류 부스트 컨버터 그리고 60[Hz] PWM인버터로 구성되어있다. 부하변동 및 과도상태에 대한 연료전지 하드웨어 시뮬레이터의 전압-전류-전력(V-I-P) 특성을 파악하였으며, 저항 부하 및 비선형 부하에 대한 전력변환기의 60[Hz] 정현파 교류출력 전압파형을 고찰하였다.

• The Korean Journal of Physiology
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• 제17권1호
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• pp.1-11
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• 1983

1) 토끼동방결절의 작은 절편에 미세 전극 두개로 voltage clamp를 하고 과분극에 의하여 활성화되는 내향전류, $i_f$의 동력학적 성상을 분석하였다. 2) 전류 $i_f$는 $10^{-7}g/ml$ TTX와 2 mM $Mn^{2+}$의 존재하에서 과분극 pulse에 의하여 활성화되었으며 그 범위는 $-45\;mV{\sim}-75\;mV$였다. 전류의 크기와 시간경과는 막전압이 과분극될수록 커지고 빨라졌다. 3) Envelope test결과 $i_f$전류는 단일 gate에 의하여 지수합수적 (exponential)으로 조절됨을 보였다. 4) 2 mM의 $Ba^{2+}$에 의하여$i_f$전류의 크기는 감소하고 시간경과도 느려졌으며 반응속도상수와 gating molecule의 열리고 닫히는 반응계수(rate coefficient; ${\alpha}_s$, ${\beta}_s$)와 막전압 관계곡선을 과분극쪽으로 이동시켰다. 이러한 $Ba^{2+}$의 효과는 24 mM $K^+$에 의하여 일부 상쇄되었다.

• 한국초전도ㆍ저온공학회논문지
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• 제15권3호
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• pp.9-12
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• 2013

Current-voltage characteristic models of superconducting material are suggested by many researchers. These current-voltage characteristic models are important because they can be used for design or simulation of superconductor devices. But widely used current-voltage models of superconductor wire still have some limitations. For example, a standard E-J power model has no parameters related with stabilizer's resistance in superconductor wire. In this paper, a current-voltage characteristic modeling method for high temperature superconductor (HTS) tape with considering the effect of stabilizer is introduced. And a current-voltage characteristic of a HTS tape is measured under different stabilizer conditions. Those measured current-voltage characteristics of the HTS tape modeled with proposed modeling method and the modeling results are compared.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.176-183
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• 1995

The present work is concerned with the switching conduction characteristics of PI LB films in metal insulator metal sandwiches. By applying various DC voltage bias to MIM junctions, conduction characteristics of junctions can be changed between the high-voltage low-current(off) condition, the low-voltage high-current (on) condition and the medium(mid) condition. Switching conduction characteristics can be also observed in MIM junctions employing some aromatic compounds as insulators. Switching conduction characteristics is assumed to be owing to the existence of aromatic rings, space charge in films, impurities on metal-insulator interface, and difference in work functions of base and top electrodes metal. To study the conduction process of on, off, and mid conductions, we measured I-V, d$^{2}$V/d I$^{2}$-V characteristics of junctions with several different top electrodes under various temperatures. Small conductance changes of junctions can be measured by observing the second derivative, d$^{2}$V/dI$^{2}$, of I-V curve. A dynamical technique is used to get the second derivatives. That is, a finite modulation of the current is applied to the junctions and the second harmonic of the voltage is detected.

• 한국재료학회지
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• 제24권7호
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• pp.375-380
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• 2014

Solar cells exhibit different power outputs in different climates. In this study, the temperature dependence of open-circuit voltage(V-oc), short-circuit current(I-sc), fill factor(FF) and the efficiency of screen-printed single-crystal silicon solar cells were studied. One group was fabricated with homogeneously-doped emitters and another group was fabricated with selectively-doped emitters. While varying the temperature (25, 40, 60 and $80^{\circ}C$), the current-voltage characteristics of the cells were measured and the leakage currents extracted from the current-voltage curve. As the temperature increased, both the homogeneously-doped and selectively-doped emitters showed a slight increase in I-sc and a rapid degradation of V-oc. The FF and efficiency also decreased as temperature increased in both groups. The temperature coefficient for each factor was calculated. From the current-voltage curve, we found that the main cause of V-oc degradation was an increase in the intrinsic carrier concentration. The temperature coefficients of the two groups were compared, leading to the idea that structural effects could also affect the temperature dependence of current-voltage characteristics.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.233-236
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• 1999

To investigate the effect of interference current between pairs and quasi-particles, we have calculated the change I-V characteristic curve of resistively and capacitively shunted Josephson junction with external microwave by simulation of modified Stewart-McCumber model. Such rf-induced constant-voltage steps and the immunity against to noise were found to be changed in the presence of interference current.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.278-281
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• 2011

This system can predict the maximum output about all illumination levels so that the PV system designer can design the system having the best efficiency. For the output prediction exact about the solar cell, that is the device the basis most in the PV system, the basis has to be in order to try this way. The solution based on Lambert W-function are presented to express the transcendental current-voltage characteristic containing parasitic power consuming parameters like series and shunt resistances. A simple and efficient method for the extraction of a single current-voltage (I-V) curve under the constant illumination level is proposed. With the help of the Lambert W function, the explicit analytic expression for I is obtained. And the explicit analytic expression for V is obtained. This analytic expression is directly used to fit the experimental data and extract the device parameters. The I-V curve of the solar cell was expressed through the modeling using Lambert W-function and the numerical formula where there is the difficulty could be logarithmically expressed This method expresses with the I-V curve through the modeling using Lambert W-function which adds other loss ingredients to the equation2 as to the research afterward. And the solar cell goes as small and this I-V curve can predict the power penalty in the system unit.