• Journal of Power Electronics
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• 제17권5호
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• pp.1372-1381
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• 2017

This paper presents a high-side switch driver IC capable of improving the current sensing accuracy and providing reverse battery protection. Power semiconductor switches used to replace relay switches are encumbered by two disadvantages: they are prone to current sensing errors and they require additional external protection circuits for reverse battery protection. The proposed IC integrates a gate driver and current sensing blocks, thus compensating for these two disadvantages with a single IC. A p-sub-based 90-V $0.13-{\mu}m$ bipolar-CMOS-DMOS (BCD) process is used for the design and fabrication of the proposed IC. The current sensing accuracy (error ${\leq}{\pm}5%$ in the range of 0.1 A-6.5 A) and the reverse battery protection features of the proposed IC were experimentally tested and verified.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2008년도 하계학술대회 논문집
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• pp.31-33
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• 2008

A novel lossless current sensing technique for a synchronous buck converter is presented. The inductor DCR method is generally used as a low cost and lossless current sensing technique of DC/DC converters. It is however difficult to obtain the accurate current value for the conventional DCR method because the inductor resistance varies depending on the operating frequency. In order to overcome this problem, an improved current sensing technique is proposed, which has the separated DC and AC sensing circuits. The concept and operation of the proposed method are explained and the experimental results are provided to show its effectiveness.

• ETRI Journal
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• 제37권6호
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• pp.1154-1164
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• 2015

This paper proposes a fully sensorless driver for a permanent magnet synchronous motor (PMSM) integrated with a digital motor controller and an analog pre-driver, including sensing circuits and estimators. In the motor controller, a position estimator estimates the back electromotive force and rotor position using a sliding-mode observer. In the pre-driver, drivers for the power devices are designed with a level shifter and isolation technique. In addition, a current sensing circuit measures a three-phase current. All of these circuits are integrated in a single chip such that the driver achieves control of the speed with high accuracy. Using an IC fabricated using a $0.18{\mu}m$ BCDMOS process, the performance was verified experimentally. The driver showed stable operation in spite of the variation in speed and load, a similar efficiency near 1% compared to a commercial driver, a low speed error of about 0.1%, and therefore good performance for the PMSM drive.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 Proceedings ICPE 98 1998 International Conference on Power Electronics
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• pp.677-682
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• 1998

A Single-phase Active Rectifier (SAR) [4-6] with high power factor capability is adopted to satisfy the international harmonic current standards such as IEC 1000-3-2. To minimize the input current distortion and to apply the control IC, such as FA5331, UC3854, ML4821 and so forth, the new adequate sensing circuits of the input voltage and current are proposed. There are tow methods applicable the SAR to inverter air-conditioner from the viewpoint of both efficiency and cost. The selecting methods of the passive components are presented for the two approaches. Using the determined components, the loss analyses are carried out. The prototype SAR circuits of these two approaches with 3kW power consumption are built and the operation and performance of the circuits with power factor correction capability are verified through the experimental results.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.593-600
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• 2010

In this paper, High brightness LED (light-emitting diodes) driver IC (integrated circuit) using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET (metal oxide semiconductor field effect transistor) from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. To confirm the functioning and characteristics of our proposed LED driver IC, we designed a buck converter. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses 1.0 ${\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre (Cadence) simulation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.9-9
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• 2010

In this paper, High Brightness LED driver IC using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses $1{\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre(Cadence) simulation.

• Transactions on Electrical and Electronic Materials
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• 제12권6호
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• pp.262-266
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• 2011

A simulation study of a current-mode direct current (DC)-DC boost converter is presented in this paper. This converter, with a fully-integrated power module, is implemented by using bipolar complementary metal-oxide semiconductor (BiCMOS) technology. The current-sensing circuit has an op-amp to achieve high accuracy. With the sense metal-oxide semiconductor field-effect transistor (MOSFET) in the current sensor, the sensed inductor current with the internal ramp signal can be used for feedback control. In addition, BiCMOS technology is applied to the converter, for accurate current sensing and low power consumption. The DC-DC converter is designed with a standard 0.35 ${\mu}m$ BiCMOS process. The off-chip inductor-capacitor (LC) filter is operated with an inductance of 1 mH and a capacitance of 12.5 nF. Simulation results show the high performance of the current-sensing circuit and the validity of the BiCMOS converter. The output voltage is found to be 4.1 V with a ripple ratio of 1.5% at the duty ratio of 0.3. The sensing current is measured to be within 1 mA and follows to fit the order of the aspect ratio, between sensing and power FET.

• 조명전기설비학회논문지
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• 제18권1호
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• pp.105-114
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• 2004

본 논문에서 반도체 소자에 대한 DC 파라미터 검사를 위한 회로를 설계하였다. DC 파라미터 검사기는 반도체 소자의 DC 특성을 검사하는 시스템 이다. 본 논문에서 설계한 회로에서는 파라미터를 검사하기 위해 전압(전류)인가 전류(전압)측정 방법을 사용하도록 회로를 설계하였다. 설계한 회로를 OR-CAD를 사용하여 실험하였으며, 설계된 회로의 실험결과를 통해 좋은 성능을 가짐을 알 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제11권1호
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• pp.24-28
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• 2010

A simulation study of a current-mode direct current (DC)-DC buck converter is presented in this paper. The converter, with a fully integrated power module, is implemented by using sense method metal-oxide-semiconductor field-effect transistor (MOSFET) and bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. When the MOSFET is used in a current sensor, the sensed inductor current with an internal ramp signal can be used for feedback control. In addition, the BiCMOS technology is applied in the converter for an accurate current sensing and a low power consumption. The DC-DC converter is designed using the standard $0.35\;{\mu}m$ CMOS process. An off-chip LC filter is designed with an inductance of 1 mH and a capacitance of 12.5 nF. The simulation results show that the error between the sensing signal and the inductor current can be controlled to be within 3%. The characteristics of the error amplification and output ripple are much improved, as compared to converters using conventional CMOS circuits.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.427-432
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• 2018

High-capacity secondary batteries can cause explosion hazards owing to microcurrent variations or current surges that occur in short circuits. Consequently, complete safety cannot be achieved with general protection that is limited to a mere current fuse. Hence, in the case of secondary batteries, it is necessary for the protector to limit the inrush current in a short circuit, and to detect the current during microcurrent variations. To serve this purpose, a fuse can be employed for the secondary battery protection circuit with current detection. This study aims at designing a protection device that can stably operate in the hazardous circumstances associated with high-capacity secondary batteries. To achieve the said objective, a detecting fuse was designed from an alloy of low melting point elements for securing stability in abnormal current states. Experimental results show that the operating I-T and V-T characteristic constraints can be satisfied by employing the proposed current detecting self-contained low melting point fuse, and through the resistance of the heating resistor. These results thus verify that the proposed protection device can prevent the hazards of short circuit current surges and microcurrent variations of secondary batteries.