• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.6
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• pp.411-418
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• 2019

Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (V_DRM) of 6,500 V. They drove an average on-state current (I_TAVM) of 2,270 A, peak nonrepetitive surge current (I_TSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I²T) of 17 MA²s without damage to the device.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.29-34
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• 2004

This paper reports the RF dispersion and linearity characteristics of unpassivated AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE). The devices with a 0.5 ${\mu}{\textrm}{m}$ gate-length exhibited relatively good DC characteristics with a maximum drain current of 730 mA/mm and a peak g$_{m}$ of 156 mS/mm. Highly linear characteristic was observed by relatively flat DC transconductance (g$_{m}$) and good inter-modulation distortion characteristics, which indicates tight channel carrier confinement of the InGaN channel. Little current collapse in pulse I-V and load-pull measurements was observed at elevated temperatures and a relatively high power density of 1.8 W/mm was obtained at 2 GHz. These results indicate that current collapse related with surface states will not be a power limiting factor for the AlGaN/InGaN HEMTs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.1
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• pp.19-28
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• 2000

The parallel inverter is widely utilized because of its fault-tolerance capability, high-current output at constant voltages and system modularity. The conventional paralled inverter usually employes an active and reactive power control or a frequency and voltage droop control. However, these approaches have the disadvantages that the response time of parallel inverter control is slow against load and system parameter variation to calculate active, reactive power, frequency and voltage. This paper describes novel control scheme for equalization of output power between the parallel connected inverters. The proposed scheme has a fast power balance control response, a simplicity of implementation, and inherent peak current limiting capability since it employes a instantaneous current/voltage control with output voltage and current balance and output voltage regulation. A design procedure for the proposed parallel inverter controller is presented. Futhermore, the proposed constrol scheme is verified through the simulation in various cases such as the system parameter variation, the control parameter variation and the nonlinear load condition.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.6
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• pp.503-508
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• 2009

There are many researches on human effect by electromagnetic equipments and applications. However, most of research and guidelines for limiting human exposure to electromagnetic fields are established by mobile communication of SAR(Specific Absorption Ratio). Therefore we need to study different effects on human body when exposed to high frequency(HF) band equipments, such as human induced current etc. In this paper, we measured human induced current by RFID reader antenna of HF band in the near field and we propose human equivalent antenna which has orthogonal loops to each other. Then, we compared the induced currents on proposed equivalent antenna with human.

• Korean Membrane Journal
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• v.7 no.1
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• pp.28-33
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• 2005

The feasibility of producing sulfuric acid and ammonia water from ammonium sulfate was investigated by an integrated process including ammonia stripping (AS) and electrodialysis with bipolar membrane (EDBM). It was suggested that the production of sulfuric acid using ammonia stripping-electrodialysis with bipolar membrane (ASEDBM) was effective in obtaining high concentration of sulfuric acid compared with EDBM alone. AS was carried out over pH 11 and within the range of temperatures, $20^{\circ}C{\~}60^{\circ}C$. Sodium sulfate obtained using AS was used as the feed solution of EDBM. The recovery of ammonia increased from $40\%$ to $80\%$ at $60^{\circ}C$ due to the increased mobility of ammonium ion. A pilot-scale EDBM system, which is composed of two compartments and 10 cell pairs with an effective membrane area of $200 cm^2$ per cell, was used for the recovery of sulfuric acid. The performance was examined in the range of 0.1 M${\~}$1.0 M concentration of concentrate compartment and of $25 mA/cm^2{\~}62.5 mA/cm^2$ of current density. The maximum current efficiency of $64.9\%$ was obtained at 0.1 M sulfuric acid because the diffusion rate at the anion exchange membrane decreased as the sulfuric acid of the concentrate compartment decreased. It was possible to obtain the 2.5 M of sulfuric acid in the $62.5 mA/cm^2$ with a power consumption of 13.0 kWh/ton, while the concentration of sulfuric acid was proportional to the current density below the limiting current density (LCD). Thus, the integrating process of AS-EDBM enables to recover sulfuric acid from the wastewaters containing ammonium sulfate.

• Journal of Microbiology and Biotechnology
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• v.23 no.12
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• pp.1765-1773
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• 2013

The cathode reaction is one of the most seriously limiting factors in a microbial fuel cell (MFC). The critical dissolved oxygen (DO) concentration of a platinum-loaded graphite electrode was reported as 2.2 mg/l, about 10-fold higher than an aerobic bacterium. A series of MFCs were run with the cathode compartment inoculated with activated sludge (biotic) or not (abiotic) on platinum-loaded or bare graphite electrodes. At the beginning of the operation, the current values from MFCs with a biocathode and abiotic cathode were $2.3{\pm}0.1$ and $2.6{\pm}0.2mA$, respectively, at the air-saturated water supply in the cathode. The current from MFCs with an abiotic cathode did not change, but that of MFCs with a biotic cathode increased to 3.0 mA after 8 weeks. The coulomb efficiency was 59.6% in the MFCs with a biotic cathode, much higher than the value of 15.6% of the abiotic cathode. When the DO supply was reduced, the current from MFCs with an abiotic cathode decreased more sharply than in those with a biotic cathode. When the respiratory inhibitor azide was added to the catholyte, the current decreased in MFCs with a biotic cathode but did not change in MFCs with an abiotic cathode. The power density was higher in MFCs with a biotic cathode ($430W/m^3$ cathode compartment) than the abiotic cathode MFC ($257W/m^3$ cathode compartment). Electron microscopic observation revealed nanowire structures in biofilms that developed on both the anode and on the biocathode. These results show that an electron-consuming bacterial consortium can be used as a cathode catalyst to improve the cathode reaction.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.960-962
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• 2005

In this paper, we investigated the quench characteristics of high-Tc superconducting(HTSC) elements in the integrated three-phase flux-lock type superconducting fault current limiter(SFCL) according to fault types such as the single-line-to-ground fault, the double-line-to-ground fault, the line-to-line fault and the triple-line-to-ground fault. The integrated three-phase flux-lock type SFCL is an upgrade version of single-phase flux-lock type SFCL. The structure of the integrated three-phase flux-lock type SFCL consisted of a three-phase flux-lock reactor wound on an iron core with the ratio of the same turn between coil 1 and coil 2 in each phase. When the SFCL is under the normal condition, the flux generated in the iron core is zero because the flux generated between two coils of each single phase is canceled out. Therefore, the SFCL's impedance is zero, and the SFCL has negligible influence on the power system. However, if a fault occurs in any single one of three phases, the flux generated in the iron core is not zero any more. The flux makes HTSC elements of all phases to quench irrespective of the fault type, which reduces the current in fault phase as well as the current of sound phase. It was obtained that the fault current limiting characteristics of the suggested SFCL were dependent on the quench characteristics of HTSC elements in all three phases.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.2000-2002
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• 2004

한류형 휴즈는 크게 저압, 고압 및 초고압 한류형 퓨즈의 3종류로 분류할 수 있다. 저압형(정격전압 200/380/660V)은 주로 전원장치 보호용으로 인버터 및 UPS에 적용되고 있으며, 고압형(정격전압 3600/7200v)은 전력계통에서 수변전설비의 고압에 적용되어 VCB, 변압기, MOTOR 및 MOLD PT 등을 보호할 목적으로 사용되고 있다. 또한 초고압형(정격전압 24000/25800v)은 수배전설비의 고압에 적용되어 발전기 및 변압기 둥을 보호할 목적으로 사용되고 있다. 한편, 한류형 퓨즈의 성능 및 수명을 결정하는 요인은 용단시간, 동작 특성 및 내습성에 의해 결정된다. 따라서, 환경요인(온도, 습도 및 전류)을 변화시켜 성능을 저하시킨 후 과전류를 인가하면 수명저하의 경향을 분석할 수 있다. 국내에서 생산하고 있는 저압, 고압 및 초고압 한류형 퓨즈의 신뢰성이 향상되면 전력계통에서의 신뢰성을 확보할 수 있고 따라서 대형사고로의 발전 가능성을 줄일 수 있다.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1187-1189
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• 1995

The paper is concerned with the pre-arcing behavior of rapid current limiting fuselink using copper as a melting element. The phenomenon is faced by a numerical simulation(especially, FDM is applicated) of the melting element. Through the results, we can know the trends of the I-t characteristics and temperature distribution along the x axis for different fuselink shapes with circular, rectangular, and skew restriction type respectively, to be good for designing the optimal element.

• ETRI Journal
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• v.27 no.1
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• pp.118-121
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• 2005

Silicon dioxide ($SiO_2$) films prepared by plasma-enhanced atomic-layer deposition were successfully grown at temperatures of $100\;to\;250^{\circ}C$, showing self-limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of $SiO_2$ films are ranged from 4.5 to 7.7 with the decrease of growth temperature. A $SiO_2$ film grown at $250^{\circ}C$ exhibits a much lower leakage current than that grown at $100^{\circ}C$ due to its high film density and the fact that it contains deeper electron traps.