• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.159-159
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• 2010

We conducted bum-in test by current stress to evaluate acceleration reliability characteristics about p-resistivity influence of GaN-based light-emitting diodes. The LEDs used in this study are the polarization field-induced LED(PF-LED) having low p-resistivity and the highly resistive LED(HR-LED) having high p-resistivity. The result of high stress experiment shows that current crowding phenomenon is occurred from the center of between p-bonding pad and n-bonding pad to either electrodes. In addition, series resistance and optical power decrease dramatically. These results means that the resistance of between p-bonding pad and p-GaN affect reliability. That's why we need to consider the ohmic contact of p-bonding pad when design the high efficiency and high reliability LEDs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.108-108
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• 2012

High-performance GaN-based light emitting diodes (LEDs) with high efficiency and excellent reliability have been of technological importance forapplications in full color display, automotive lighting, and solid state lighting. To realize high-performance and excellent-reliability LEDs, various technologies such as surface texturing, transparent conducting oxide, surface Plasmon, highly p-conduction layer, current blocking layer, photon-enhanced layer, and nanostructures have been extensively investigated. Among them, advanced core technologies based on how to suppress surface leakage and current crowding, how to enhance current injection efficiency and output power, and how to resist electrostatic damage will be displayed and discussed using our reported and preliminary results. New approaches like integrated LEDs will be also introduced and discussed.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.19-23
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• 2014

For the application of light-emitting diodes (LEDs) for general illumination, the development of high power LEDs chips became more essential. For these reasons, recently, modified vertical LEDs have been developed to meet various requirements such as better heat dissipation, higher light extraction and less cost of production. In this research, we investigate the effect of Size and Array of N-GaN contact on operation voltage with new structured padless vertical LED. We changed the size and array of N-electrodes and investigated how they affect the operation voltage of LEDs. We simulated the current crowding and expected operation voltage for different N-contact structures with commercial LED simulator. Also, we fabricated the padless vertical LED chips and measured the electrical property. From the simulation, we could know that the larger size and denser array of n-electrodes could make operation voltage decrease. These results are well in accordance with those measured values of real padless vertical LED chips.

• Pediatric Gastroenterology, Hepatology & Nutrition
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• v.3 no.1
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• pp.17-22
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• 2000

Purpose: This study was conducted to evaluate the association between H. pylori infection and socioeconomic status and to determine the current prevalence of H. pylori infection in Korean adolescents. Methods: A structured questionnaire was sent to the children's parents to obtain demographic information on the parents and environmental information. Of the 532 questionnaires sent out, 375 (70.5%; 170 girls and 205 boys) were returned. Their ages ranged from 10 to 15 years (mean, 12.9 years). After collecting blood samples, we measured serum IgG antibody to H. pylori using ELISA method. The association of risk factors such as age, sex, socioeconomic class, type of house, and crowding index with H. pylori infection were analyzed by multiple regression analysis. Socioeconomic status was estimated from the parents' education and occupation using a modified Hollingshead index. Results: The prevalence rate of H. pylori infection was 16.8% (63/375). It increased with age (10.3% at 10~11 years, 15.9% at 12~13 years, and 20.7% at 14~15 years). The H. pylori infection was inversely related to the socioeconomic class (6.3% for the upper class, 16.0% for the middle class, and 20.0% for the lower calss). Crowding condition and type of house did not affect significantly on seroprevalence of H. pylori infection. After logistic regression, we found that the odds ratio for age was 2.2 (95% confidence interval 0.9~5.4), and for socioeconomic status, 3.6 (95% confidence interval 0.5~28.9). Conclusion: The prevalence of H. pylori infection in Korean adolescents was 16.8%. It related inversely to socioeconomic status but was not statistically significant. Socioeconomic status based on parents' education and occupation seemed to affect more on H. pylori seroprevalence than crowding or type of house did.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.767-770
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• 2010

In this work, we investigated the static characteristics of 4H-SiC vertical metal-oxidesemiconductor field effect transistors (VMOSFETs) by adjusting the doping level of n-epilayer and the effect of a current spreading layer (CSL), which was inserted below the p-base region with highly doped n+ state ($5{\times}10^{17}cm^{-3}$). The structure of SiC VMOSFET was designed by using a 2-dimensional device simulator (ATLAS, Silvaco Inc.). By varying the n-epilayer doping concentration from $1{\times}10^{16}cm^{-3}$ to $1{\times}10^{17}cm^{-3}$, we investigated the static characteristics of SiC VMOSFETs such as blocking voltages and on-resistances. We found that CSL helps distribute the electron flow more uniformly, minimizing current crowding at the top of the drift region and reducing the drift layer resistance. For that reason, silicon carbide VMOSFET structures of highly intensified blocking voltages with good figures of merit can be achieved by adjusting CSL and doping level of n-epilayer.

• Current Optics and Photonics
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• v.4 no.4
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• pp.380-390
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• 2020

In this study, the traditional electron-blocking layer (EBL) in (In,Ga)N/GaN light-emitting diodes is replaced by a circular EBL that is the same size as the n-pad. The three-dimensional (3D) nonlinear Poisson, drift-diffusion, and continuity equations are adopted to simulate current transport in the LED and its characteristics. The results indicate that the local carrier-density distribution obtained for the circular EBL design is more uniform than that for the traditional EBL design. This improves the uniformity of local radiative recombination and local internal quantum efficiency (IQE) at high injection levels, which leads to a higher lumped IQE and lower efficiency droop. With the circular EBL, the lumped IQE is higher in the outer active region and lower in the active region under the n-pad. Since most emissions from the active region under the n-pad are absorbed by the n-pad, obviously, an LED with a circular EBL will have a higher external quantum efficiency (EQE). The results also show that this LED works at lower applied voltages.

• Economic Analysis
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• v.25 no.3
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• pp.100-137
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• 2019

In this study, I analyzed the effects of government spending on macro variables and on each industry by using a factor augmented vector autoregressive model (FAVAR) and 167 macro-variables in Korea since 2000. The results reveal that the effects of two types of government spending - government consumption and government investment - greatly differ, therefore it is better to consider the two types of spending separately for a more precise analysis. The stimulus effects of government consumption are clear, but those of government investment are not. In addition, the crowding-out effects of government spending take place through the current account deficit channel rather than the traditional crowding-out channel, reducing private consumption and investment. Both types of government spending show a positive effect on the construction industry. Also, an increase in government consumption stimulates output in various manufacturing and service sectors.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.105-112
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• 2009

In this paper, we investigated abnormal ESD failure on guard-rings in the smart power IC fabricated with $0.35{\mu}m$ Bipolar-CMOS-DMOS (BCD) technology. Initially, ESD failure occurred below 200 V in the Machine Model (MM) test due to current crowding in the parasitic diode associated with the guard-rings which are generally adopted to prevent latch-up in high voltage devices. Optical Beam Induced Resistance Charge (OBIRCH) and Scanning Electronic Microscope (SEM) were used to find the failure spot and 3-D TCAD was used to verify cause of failure. According to the simulation results, excessive current flows at the comer of the guard-ring isolated by Local Oxidation of Silicon (LOCOS) in the ESD event. Eventually, the ESD failure occurs at that comer of the guard-ring. The modified comer design of the guard-ring is proposed to resolve such ESD failure. The test chips designed by the proposed modification passed MM test over 200 V. Analyzing the test chips statistically, ESD immunity was increased over 20 % in MM mode test. In order to avoid such ESD failure, the automatic method to check the weak point in the guard-ring is also proposed by modifying the Design Rule Check (DRC) used in BCD technology. This DRC was used to check other similar products and 24 errors were found. After correcting the errors, the measured ESD level fulfilled the general industry specification such as HBM 2000 V and MM 200V.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.161-168
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• 1996

For the improvement of microelectronic thin film interconnection materials, dielectric passivation effects on the electromigration phenomena were studied. Using Al-1%Si, various shaped patterns were fabricated and dielectric passivation layers of several structures were deposited on the $SiO_2$ layer. Lifetime of straight pattern showed 2~5 times longer than the other patterns that had various line width and area. It is believed that the flux divergence due to the structural inhomogeneity and so the current crowding effects shorten the lifetime of thin film interconnections. The lifetime of thin film interconnections seems to depend on both the passivation materials and the passivation thickness. PSG/$SiO_2$ dielectric passivation layers showed longer lifetime than $Si_3N_4$ dielectric passivation layers. This results from the PSG on $SiO_2$ layer reduces stress and from the improvement of resistance to the moisture and to the mobile ion such as sodium. This is also believed that the lifetime of thin film interconnections seems to depend on the passivation thickness in case of the same deposition materials.

• Proceedings of the KIEE Conference
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• 1998.07a
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• pp.76-78
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• 1998

Niching methods extend genetic algorithms to domains that require the location of multiple solutions. But, current niching methods have some of drawbacks in the ability of search and preservation of solutions. So, this paper presents a new technique, named as Restricted Competition Selection(RCS). Then, RCS method is compared with sharing and deterministic crowding by applying to some multimodal problems in order to verify that it has more favorable properties.