• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.276-283
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• 2005

Magnetic tunneling transistor (MTT) device using the amorphous n-type Si semiconductor film for base and collector consisting of the [CoFe/NiFe](free layer) and Si(top layer) multilayers was used to study the spin-dependent hot electron magnetocurrent (MC) and tunneling magnetoresistance (TMR) at room temperature. A large MC of 40.2 % was observed at the emitter-base bias voltage ( $V_{EB}$ ) of 0.62 V. The increasing emitter hot current and transfer ratio ( $I_{C}$/ $I_{E}$) as $V_{EB}$ are mainly due to a rapid increase of the number of conduction band states in the Si collector. However, above the $V_{EB}$ of 0.62 V, the rapid decrease of MC was observed in amorphous Si-based MTT because of hot electron spin-dependent elastic scattering across CoFe/Si interfaces.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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• pp.155-159
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• 2003

This paper presents fully integrated 5 GHz band low phase noise LC tank VCO. The implemented VCO is tuned by integrated PN diode and tuning rage is $5.01{\sim}5.30$ GHz under $0{\sim}3 V$ control voltage. For good phase noise performance, LC filtering technique, common in Si CMOS process, is used, and to prevent degradation of phase noise performance by collector shot-noise and to reduce power dissipation the HBT is biased at low collector current density bias point. The measured phase noise is -87.8 dBc/Hz at 100 kHz offset frequency and -111.4 dBc/Hz at 1 MHz offset frequency which is good performance. Moreover phase noise is improved by roughly 5 dEc by LC filter. It is the first experimental result in InGaP/GaAs HBT process. The figure of merit of the fabricated VCO with LC filter is -172.1 dBc/Hz. It is the best result among 5 GHz InGaP HBT VCOs. Moreover this work shows lower DC power consumption, higher output power and more fixed output power compared with previous 4, 5 GHz band InGaP HBT VCOs.

• Journal of Biosystems Engineering
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• 제36권3호
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• pp.204-210
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• 2011

This study developed the cyclone conveying system using roughage cutter for the round bale reported in the previous papers. Performance tests were conducted whether it can easily separate dust from roughage such as rice straws and it can transport roughages from cutter to TMR mixer. In addition, the airflow patterns in the cyclone conveying system were investigated using CFD code (FLUENT 6.2) for various velocities of dust collection fan. The cyclone conveying system was designed based on dried rice straws with a diameter of 1,340 mm, a cylinder length of 1,220 mm, a cone length of 850 mm and the current velocity of the dust collection fan was 15~20 m/s. It was found that transporting of roughage from cutter to TMR mixer and the separation of dust were satisfactory, and the dust removal rate of rice straws was around 31.9%. CFD analysis showed that, at the blowing fan velocity of 11.6 m/s, the airflow velocity inside the dust collector increased as velocity of the dust collection fan increased, but the airflow patterns inside the dust collector were all much the same.

• 전자공학회논문지A
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• 제32A권2호
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• pp.66-72
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• 1995

Using the Si/SiGe layer grown by solid source molecular beam epitaxy(SSMBE) on the LOCOS-patterned wafers, an emitter-base self-aligned hterojunction biplar transistor(HBT) with the polysilicon-emitter and the silicon germanium(SiGe) base has been fabricated. Trech isolation process, planarization process using a chemical-mechanical poliching, and the selectively implanted collector(SIC) process were performed. A titanium disilicide (TiSi$_{2}$), as a base electrode, was used to reduce an extrinsic base resistance. To prevent the strain relaxation of the SiGe epitaxial layer, low temperature (820${^\circ}C$) annealing process was applied for the emitter-base junction formation and the dopant activation in the arsenic-implanted polysilicon. For the self-aligned Si/SiGe HBT of 0.9${\times}3.8{\mu}m^{2}$ emitter size, a cut-off requency (f$_{T}$) of 17GHz, a maximum oscillation frequency (f$_{max}$) of 10GHz, a current gian (h$_{FE}$) of 140, and an emitter-collector breakdown voltage (BV$_{CEO}$) of 3.2V have been typically achieved.

• 한국태양에너지학회 논문집
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• 제22권4호
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• pp.107-119
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• 2002

A review on the papers published in the Korean Journal of Solar Energy between 2000 and 2002 has been done. Focus has been put on current status of research in the aspect of Insolation. Solar Collector and Storage System, Solar Heating and Cooling System, Solar Cell and Lighting System, Active and Passive Solar Building, Heat Transfer in Solar Energy and Natural Energy. The conclusions are as follows. 1) Many studies on Insolation were conducted to optimize the usage of Solar Energy. 2) A review of the recent studies on solar thermal shows that there were many papers on solar collector and storage system. However, studies on the HVAC system using solar energy were relatively insufficient. 3) To produce high efficient solar cell. various experimental and numerical papers were published. However studies on control system, solar cell and lighting were seemed to be insufficient. 4) Studies on using solar energy in passive solar buildings were widely carried out, however, studies based on synthetic analysis of buildings and BIPV were insufficient. 5) Studies on heat transfer were mainly about heat exchanger, performance of heat pipe and multi air conditioner. 6) Studies on energy resources except for solar energy, such as hydraulic power and wind power etc. were very few.

• 한국안전학회지
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• 제30권1호
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• pp.21-27
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• 2015

In this study, interfacial characteristics between SOFC and Ag paste as current collector was estimated in the high temperature environment. The Ag paste was used to connect the unit cell of SOFC strongly with interconnector and provide the electrical conductivity between them. To confirm electrical conductivity, Ag paste was treated in the furnace at $800^{\circ}C$ for 48 hours. The sheet resistance of Ag paste was measured to compare the resistance values before and after the heat treatment. Also, the four-point bending test was performed to measure the interfacial adhesion. The unit cell of SOFC and $SiO_2$ wafer were diced and then attached by Ag paste. The $SiO_2$ wafer had the center notch to initiate a crack from the tip of the notch. The modified stereomicroscope combined with the CCD camera and system for measuring the length was used to observe the fracture behavior. To compare the characteristics before heat treatment and after heat treatment, the specimen was exposed in the furnace at $800^{\circ}C$ for 48 hours and then the interfacial adhesion was evaluated. Finally, the interfacial adhesion energy quantitatively increases $1.78{\pm}0.07J/m^2$ to $4.9{\pm}0.87J/m^2$ between the cathode and Ag paste and also increase $2.9{\pm}0.47J/m^2$ to $5.12{\pm}1.01J/m^2$ between the anode and Ag paste through the high temperature. Therefore, it is expected that Ag paste as current collector was appropriate for improving the structural stability in the stacked SOFC system if the electrical conductivity was more increased.

• 한국진공학회지
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• 제14권1호
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• pp.29-34
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• 2005

실리콘-게르마늄 바이시모스(SiGe BiCMOS) 소자 제작시 발생하는 실리콘-게르마늄 이종접합 바이폴라 트랜지스터(SiGe HBT) 열화 현상에 대하여 고찰하였다. 독립적으로 제작된 소자에 비해 SiGe BiCMOS 공정에서의 SiGe HBT소자는 얼리 전압(Early voltage), 콜렉터-에미터 항복전압 및 전류이득등의 DC특성이 열화되고 상당한 크기의 베이스 누설전류가 존재한다는 것을 알 수 있었다. 또한 AC 특성인 차단주파수(f/sub T/) 및 최대 진동주파수(f/sub max/)도 1/2이하로 현저하게 저하되는 것을 확인하였다. 이는 고온의 소오스-드레인 열처리에 의한 붕소의 농도분포 변화가 에미터-베이스 및 콜렉터-베이스 접합 위치에 변화를 주고, 결국 실리콘-게르마늄 내에서의 접합 형성이 이루어지지 않아 전류 이득이 감소하고 기생 장벽이 형성되어서 발생한 현상이다.

• 전기화학회지
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• 제14권3호
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• pp.152-156
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• 2011

A room temperature ionic liquid (RTIL) based on trihexyl (tetradecyl)phosphonium bis(trifluoromethanesulfonyl) imide ([$(C_6H_{13})_3P(C_{14}H_{29)}$] [TFSI];P66614TFSI) was synthesized and analyzed to determine their characteristics and properties. The bis(trifluoromethanesulfonyl)imide (TFSI) anion is widely studied as an ionic liquid (IL) forming anion which imparts many useful properties, notably electrochemical stability. Especially its electrochemical and physical characteristics for solvent of lithium ion battery were investigated in detail. $P_{66614}$ TFSI exhibits fairly low conductivity (0.89 mS $cm^{-1}$) and higher viscosity (298 K: 277 cP; 343 K: 39 cP) than other ionic liquids, but it exhibits a high thermal stability (over $400^{\circ}C$). Especially corrosion behavior on Al current collector was tested at room temperature and further it was confirmed that thermal resistivity for Al corrosion was highly increased in 1.0M LiTFSI/$P_{66614}$-TFSI electrolyte comparing with other RTILs by linear sweep thermometry.

• Journal of Electrochemical Science and Technology
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• 제13권1호
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• pp.78-89
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• 2022

ANODE-free Li-metal batteries (AFLMBs) operating with Li of cathode material have attracted enormous attention due to their exceptional energy density originating from anode-free structure in the confined cell volume. However, uncontrolled dendritic growth of lithium on a copper current collector can limit its practical application as it causes fatal issues for stable cycling such as dead Li formation, unstable solid electrolyte interphase, electrolyte exhaustion, and internal short-circuit. To overcome this limitation, here, we report a novel dual-salt electrolyte comprising of 0.2 M LiPF₆ + 3.8 M lithium bis(fluorosulfonyl)imide in a carbonate/ester co-solvent with 5 wt% fluoroethylene carbonate, 2 wt% vinylene carbonate, and 0.2 wt% LiNO₃ additives. Because the dual-salt electrolyte facilitates uniform/dense Li deposition on the current collector and can form robust/ionic conductive LiF-based SEI layer on the deposited Li, a Li/Li symmetrical cell exhibits improved cycling performance and low polarization for over 200 h operation. Furthermore, the anode-free LiFePO₄/Cu cells in the carbonate electrolyte shows significantly enhanced cycling stability compared to the counterparts consisting of different salt ratios. This study shows an importance of electrolyte design guiding uniform Li deposition and forming stable SEI layer for AFLMBs.

• 전자공학회논문지SC
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• 제46권2호
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• pp.1-6
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• 2009

금속 산화막 반도체 전계효과 트랜지스터(MOSFET)와 트랜지스터(Transistor)와 접합형으로 구성된 절연 게이트 양극성 트랜지스터(IGBT)의 게이트바이어스 상태에서 감마방사선을 조사하면 전기적특성에서 문턱전압과 전류이득의 감소가 발생한다. 저선량과 고선량에서 문턱전압의 이동은 전류의 증감에 따라 변화한다. 본 논문에서 콜렉터전류는 게이트와 에미터간의 전압으로 구동되는데 게이트 바이어스 전압과 조사량에 따라 실험하고 전기적 특성을 분석한다. 그리고 IGBT를 설계하는데 필요한 모델파라미터를 구하고 연구하는데 있다.