• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.52.1-52.1
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• 2009

Cupric oxide (CuO) is a p-type semiconductor with band gap of ~1.7 eV and reported to be suitable for catalysis, lithium-copper oxide electrochemical cells, and gas sensors applications. The nanoparticles, plates and nanowires of CuO were found sensing to NO2, H2S and CO. In this work, we report about the comparison about hydrogen sensing of nano thin film and nanowires structured CuO deposited on single-walled carbon nanotubes (SWNTs). The thin film and nanowires are synthesized by deposition of Cu on different substrate followed by oxidation process. Nano thin films of CuO are deposited on thermally oxidized silicon substrate, whereas nanowires are synthesized by using a porous thin film of SWNTs as substrate. The hydrogen sensing properties of synthesized materials are investigated. The results showed that nanowires cupric oxide deposited on SWNTs showed higher sensitivity to hydrogen than those of nano thin film CuO did.

• Journal of the Korean Ceramic Society
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• v.20 no.2
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• pp.161-165
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• 1983

We studied the dependence of electrical conduction mechanism of Cupric Oxide on temperature and measured the specific resistivity of sintered specimen from $600^{\circ}C$ to 90$0^{\circ}C$ . We considered the relations between electrical conducti-vityand temperature with reheating the sintered specimen. X-Ray diffraction patterns showed that lattice parameters of cupric oxide increased above 20$0^{\circ}C$. Cupric oxide had nostoichiometric compositions$(CuO_{1+x})$ owing to the excess oxygen and showed hole conduction with energy gap of 0.15eV below $650^{\circ}C$$\pm$1$0^{\circ}C$ Above $650^{\circ}C$$\pm$1$0^{\circ}C$ cupic oxide had the stoichiometric composition and showed electron-hole conduction owing to the intrinsic ionization with energy gap of 1.04V.

• Journal of the Korean institute of surface engineering
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• v.55 no.2
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• pp.63-69
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• 2022

Preparing various types of thin films of oxide semiconductors is a promising approach to fabricate efficient photoanodes and photocathodes for hydrogen production via photoelectrochemical (PEC) water splitting. In this work, we investigate the feasibility of an efficient photocathode for PEC water reduction of a p-type oxide semiconductor cupric oxide (CuO) thin film prepared via a facile method combined with sputtering Cu metallic film on fluorine-doped thin oxide (FTO) coated glass substrate and subsequent thermal oxidation of the sputtered Cu metallic film in dry air. Characterization of the structural, optical, and PEC properties of the CuO thin film prepared at various Cu sputtering powers reveals that we can obtain an optimum CuO thin film as an efficient PEC photocathode at a Cu sputtering power of 60 W. The photocurrent density and the optimal photocurrent conversion efficiency for the optimum CuO thin film photocathode are found to be -0.3 mA/cm² and 0.09% at 0.35 V vs. RHE, respectively. These results provide a promising route to fabricating earth-abundant copper-oxide-based photoelectrode for sunlight-driven hydrogen generation using a facile method.

• Journal of Korean Society for Atmospheric Environment
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• v.10 no.2
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• pp.83-89
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• 1994

The reaction of sulfur dioxide with cupric oxide was investigated over a temperature range of 300-50$0^{\circ}C$, and the regenaration reaction was studied using cupric sulfate and hydrogen over a temperature range of 240-35$0^{\circ}C$ in a fixed bed reactor. The experimental results showed that the efficiencies for elimination and regenaration reactions were maximum at 45$0^{\circ}C$ and at 30$0^{\circ}C$ respectively. In both cases the experimental data could be interpreted properly by shrinking unreacted core model while the chemical reaction is rate controlling step. The reaction rate constants were determined to be 24.88 exp(-6724/RT) (cm/min) for elimination reaction, and 0.0165 exp(-2047/RT)(cm/min ) for regeneration reaction.

• Journal of the Korean Ceramic Society
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• v.31 no.4
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• pp.381-388
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• 1994

A new process which co-fires the low-firing-substrate and copper conductor was studied to achieve good bond strength and low sheet resistance of conductor. Cupric oxide is used as the precursor of conductive material in the new method and the firing atmosphere of the new process is changed sequently in air H2N2. The addition of cupric oxide and variations of firing atmosphere permited complete binder-burnout in comparison with the conventional method and contributed to the improvement of resistance and bonding behaviors. The potimum conditions of this experiment to obtain the satisfactory resistance and bond strength are as follows (binder-burnout temperature in air; 55$0^{\circ}C$, reducing temperature in H2; 40$0^{\circ}C$ for 30 min, ratio of copper and cupric oxide; 60:40~30:70 wt%). The bonding mechanism between the substrate and metal was explained by metal diffusion layer in the interface and the bond strength mainly depended on the stress caused by the difference of shrinkage and thermal expansion coefficient between the substrate and metal.

• Journal of the Korean institute of surface engineering
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• v.56 no.4
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• pp.219-226
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• 2023

Utilizing low-dimensional structures of oxide semiconductors is a promising approach to fabricate relevant gas sensors by means of potential enhancement in surface-to-volume ratios of their sensing materials. In this work, vertically aligned cupric oxide (CuO) nanorods are successfully synthesized on a transparent glass substrate via seed-mediated hydrothermal synthesis method with the use of a CuO nanoparticle seed layer, which is formed by thermally oxidizing a sputtered Cu metal film. Structural and optical characterization by x-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy reveals the successful preparation of the CuO nanorods array of the single monoclinic tenorite crystalline phase. From gas sensing measurements for the nitrogen monoxide (NO) gas, the vertically aligned CuO nanorod array is observed to have a highly responsive sensitivity to NO gas at relatively low concentrations and operating temperatures, especially showing a high maximum sensitivity to NO at 200 ℃ and a low NO detection limit of 2 ppm in dry air. These results along with a facile fabrication process demonstrate that the CuO nanorods synthesized on a transparent glass substrate are very promising for low-cost and high-performance NO gas sensors.

• Journal of the Korean Society of Safety
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• v.6 no.4
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• pp.26-33
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• 1991

To remove SO$_2$ from flus gas, cupric oxide, manganese oxide and iron oxide were studied with varying loading value. The experiment was carried out in a flow reactor and the reactants were prepared by impregnation method using alumina. The reaction temperature was varied from 30$0^{\circ}C$ to 45$0^{\circ}C$. Experimental results showed that all of these metal oxides were effective on SO$_2$ removal reaction and cupric oxide was the best reactant. The sample with 10wt％ loading value was better reactant than with 20wt％ because in case of 20wt％ loading, metal dispersion on the alumina surface was not uniform. And the SO$_2$ removal efficiency was increased with the reaction temperature.

• Journal of Korean Society for Atmospheric Environment
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• v.6 no.2
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• pp.161-167
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• 1990

The reaction of sulfur dioxide with cupric oxide supported on zeolite was investigated over a temperature range of $250{\sim}450^{{\circ}C$. After the completion of the $SO_2$ removal reaction, the cupric sulfate produced was regenerated to copper by hydrogen or LPG. The experimental results showed that the removal efficiency of $SO_2$ was improved with temperature increase and with $SO_2$ inlet concentration decrease. The reaction of $SO_2$ with CuO/Zeolite was well explained by the shrinking unreacted core model using first order chemical reaction control and diffusion control. THe reaction rate constant and the effective diffusivity were respectively as follows: 1k (cm/s) = 2.519 exp[-10991 (cal/mol)/RT] $De(cm^2/s) = 2.06 \times 10^{-5} exp[-8380 (cal/mol)/RT]$

• Journal of the Korean Society of Safety
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• v.1 no.1
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• pp.27-32
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• 1986

To remove sulfur dioxide from flue gas by the method of metal oxide, copper powder of average diameter $2.4\mu\textrm{m}$and $51\mu\textrm{m}$ were used in a fixed bed reactor over a, temperature range of $300^{\circ}C-500^{\circ}C$. Copper oxide reacts with sulfur dioxide producing cupric sulfate and it can be regenerated from the latter by using hydrogen or methane. Experimental results showed that the reaction rate was increased by the increase of reaction temperature in the range of $300^{\circ}C-422^{\circ}C$ and the removal efficiency of sulfur dioxide was high in case of small size copper particle. However the removal efficiency was decreased at higher temperature due to decomposition of cupric sulfate. The rate controlling step of this reaction was chemical reaction and deactivating catalysts model can be applied to this reaction. The rate constants for this reaction and deactivation are as follows ： k＝8,367exp(-10,298/RT) Kd＝2.23exp(-8,485/RT)

• Journal of the Korean Ceramic Society
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• v.11 no.1
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• pp.3-9
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• 1974

The role of added metal oxide in the adherence mechanism of low melting glass to several metal plates such as oxygen free high conducting copper, low carbon steel, chrominum galvanized on copper, and stainless steel was investigated. The metal oxide which added to glass were cupric oxide, ferric oxide, chromic oxide, and stainless steel oxide. The glass to that various metla oxide were added, sealed with several metal plates in the electric furnace at $650^{\circ}C$ for 5 minutes. The results as follows; 1) The interfacial reaction was promoted and strong chemical bonding with glass and metals by which the surface energy was decreased showed excellent sealing by addition of metal oxide. 2) When the interfacial reaction of glass and metals was promoted by addition of metal oxide found out that various adhernece mechanism were related to the sealing. 3) When the amount of metal oxide addition was 3-5% the excellent sealing was achieved.