• Proceedings of the Korean Vacuum Society Conference
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• 1994.02a
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• pp.93-95
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• 1994

• Proceedings of the Korean Operations and Management Science Society Conference
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• 1999.04a
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• pp.15-16
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• 1999

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.735-738
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.98-102
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• 2010

This paper describes that single crystalline 3C-SiC (cubic silicon carbide) thin films have been deposited on carbonized Si(100) substrates using hexamethyldisilane (HMDS, $Si_2(CH_3){_6}$) as a safe organosilane single precursor and a nonflammable mixture of Ar and $H_2$ gas as the carrier gas by APCVD at $1280^{\circ}C$. The deposition was performed under various conditions to determine the optimized growth condition. The crystallinity of the 3C-SiC thin film was analyzed by XRD (X-ray diffraction). The surface morphology was also observed by AFM (atomic force microscopy) and voids between SiC and Si interfaces were measured by SEM (scanning electron microscopy). Finally, residual strain and hall mobility was investigated by surface profiler and hall measurement, respectively. From these results, the single crystalline 3C-SiC film had a good crystal quality without defects due to viods, a low residual stress, a very low roughness.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.487-493
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• 1996

Diamond films were grown at lower temperatures (630-813K) on Si, Al (1100P), and Al-Si(8A, 8B, BC) alloy substrates using improved microwave plasma CVD apparatus in a mixed methane and hydrogen plasma. Improved microwave plasma CVD apparatus equipped water cooled substrate holder and the substrates were set up lower position than bottom line of the applicator waveguide. When the methane concentration was high and growth was conducted at lower pressures the diamond films were synthesized. Moreover the deposits on the scratched substrates formed flat surfaces consisting of fine grains. XRD results, the deposits were identified to cubic diamond. An analysis using Raman spectroscopy, further confirmed that diamond films deposited on the Si substrates were high quality. The deposits on the Al substrates, in contrast, contained amorphous carbon. While the quality of the deposits on the Al-Si substrates were differed with the substrate alloys.

• Proceedings of the Korean Magnestics Society Conference
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• 2016.05a
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• pp.98-98
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• 2016

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.5
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• pp.188-192
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• 2016

In this work, the SiC powders were synthesized through the carbonized matter from the mixture of silica powder and rice husks. The SiC powders, obtained from the carbothermal reduction reaction of silica and carbonized rice husks, were investigated by XRD patterns, XPS, FE-SEM and FE-TEM. In the XRD patterns, the specimens showed clearly very high strong peak of (111) plane near $35^{\circ}$ as well as weak (220) and (311) peak respectively at approximately $60^{\circ}$ and $72^{\circ}$. Under Ar atmosphere, the power synthesized from the mixture (in case of mixing ratio, 6 : 4) of carbonized rice husks and silica showed mainly cubic SiC crystalline phase showing relatively lower ratio of hexagonal phase without residual carbon in XRD pattern. In the TEM analysis, the specimen, synthesized from carbonized rice husks and silica with mixing ratio of 6 : 4 under Ar atmosphere, showed relatively fine particles under $5{\mu}m$ and a crystalline SiC phase of (100) diffraction pattern.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.493-496
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• 2009

Phase stabilized leucite, which has high coefficient of thermal expansion, was synthesized, and its thermal expansion behavior was investigated. The homogeneous leucite phase was synthesized by solid state reaction from the mixture of $K_2CO_3-Al_2O_3-SiO_2$. and its stabilization from tetragonal to cubic phase was attempted by adding $Cs_2CO_3$ into starting materials. And fine powder with an average particle size of a few hundreds ${\mu}m$ were fabricated by planetary milling. During milling, amorphization of leucite was observed and recrystallized after heat treatment. The thermal expansion behavior of tetragonal and cubic leucite has measured and discussed. The average coefficient of thermal expansion of tetragonal and cubic phase leucite from room temperature to $750^{\circ}C$ was $21.4{\times}10^{-6}/^{\circ}C$ and $14.5{\times}10^{-6}/^{\circ}C$, respectively.

• Applied Microscopy
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• v.47 no.3
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• pp.105-109
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• 2017

The effect of temperature and vanadium metal concentration on the electronic and thermoelectric properties of Si in the diamond cubic structure has been investigated using a combination of density functional theory simulations and the semi classical Boltzmann's theory. The BotzTrap code within the constant relaxation time approximation has been used to obtain the Seebeck coefficient and other transport properties of interest for alloys of the structure $Si_{1-x}V_x$, where x is 0, 0.125, 0.25, 0.375, and 0.5. The thermoelectric properties have been extracted for a temperature range of 300 K to 1,000 K. The general trend with V atom substitution for Si causes the Seeback coefficient to increase and the thermal conductivity to decrease for the various alloys. The optimum values are for $Si_5V_3$ and $Si_4V_4$ alloys for charge carrier concentrations of $10^{21}cm^{-3}$ in the mid temperature range of 500~800 K. This is a very desirable effect for a promising thermoelectric and the figure of merit ZT approaches 0.2 at 600 K for the p-type $Si_5V_3$ alloy.

• Nuclear Engineering and Technology
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• v.53 no.5
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• pp.1619-1625
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• 2021

This paper demonstrates the possible nondestructive analysis of iron artifacts' metallurgical characteristics using neutron imaging. Ancient kingdoms of the Korean Peninsula used a direct smelting process for ore smelting and iron bloom production; however, the use of iron blooms was difficult because of their low strength and purity. For reinforcement, iron ingots were produced through refining and forge welding, which then underwent various processes to create different iron goods. To demonstrate the potential analysis using neutron imaging, while ensuring artifacts' safety, a sand iron ingot (SI-I) produced using ancient traditional iron making techniques and a sand iron knife (SI-K) made of SI-I were selected. SI-I was cut into 9 cm², whereas the entirety of SI-K was preserved for analysis. SI-I was found to have an average grain size of 3 ㎛, with observed α-Fe (ferrite) and pearlite with a body-centered cubic (BCC) lattice structure. SI-K had a grain size of 1-3 ㎛, α-Ferrite on its backside, and martensite with a body-centered tetragonal (BCT) structure on its blade. Results show that the sample's metallurgical characteristics can be identified through neutron imaging only, without losing any part of the valuable artifacts, indicating applicability to cultural artifacts requiring complete preservation.