• 한국초전도ㆍ저온공학회논문지
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• 제2권2호
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• pp.1-5
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• 2000

There is the possibility that internal tin processed Nb$_3Sn$ wires are locally heated during the drawing process and the jacketing process. It is important to know the variations in J$_c$ of internal tin processed Nb$_3Sn$ wires caused by local heating. Internal tin processed Nb$_3Sn$ rods were cold worked to 2.28 mm, using the appropriate reduction ratio, and then cut into several pieces. At this stage, wires were locally 50 mm heat zone heated up to 360$^{\circ}C$. The locally heated Nb$_3Sn$ wires were drawn to a final diameter size of 0.81 mm. Others were cold worked successively to 0.81 mm and locally heated with the same conditions. 2 types of locally heat treated wires were wound on Ti-6Al-4V barrels and heat treated for the Nb$_3Sn$ reaction. Local heating of internal tin processed Nb$_3Sn$ wires after the J$_c$ of these wires. However, local heating at an intermediate stage of the drawing process caused a decrease in J$_c$. When the local heating temperatures were higher than melting point of Sn, non-Cu J$_c$'s decreased significantly. A Sn-Cu alloyed boundary appeared after local heating over the melting point of Sn, and caused work hardening and a decrease in the workability.

• 마이크로전자및패키징학회지
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• 제18권3호
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• pp.67-74
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• 2011

Keys to high wiring density semiconductor packages include flip-chip bonding and build-up substrate technologies. The current issues are the establishment of a fine pitch flip-chip bonding technology and a low coefficient of thermal expansion (CTE) substrate technology. In particular, electromigration and thermomigration in fine pitch flipchip joints have been recognized as a major reliability issue. In this paper, electromigration and thermomigration in Cu/Sn-3Ag-0.5Cu (SAC305)/Cu flip-chip joints and electromigration in Cu/In/Cu flip chip joints are investigated. In the electromigration test, a large electromigration void nucleation at the cathode, large growth of intermetallic compounds (IMCs) at the anode, a unique solder bump deformation towards the cathode, and the significantly prolonged electromigration lifetime with the underfill were observed in both types of joints. In addition, the effects of crystallographic orientation of Sn on electromigration were observed in the Cu/SAC305/Cu joints. In the thermomigration test, Cu dissolution was accelerated on the hot side, and formation of IMCs was enhanced on the cold side at a thermal gradient of about $60^{\circ}C$/cm, which was lower than previously reported. The rate of Cu atom migration was found comparable to that of electromigration under current conditions.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.791-797
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• 2002

This paper introduces the partial melting process for solder application and characterization of its feasibility using Sn-Ag, and Sn-Cu solder alloys. ill order to show that the liquid phase in the semi-liquid state maintains the similar wettability as single-phase liquid, the wetting balance tests are conducted with varying temperatures and compositions. Also, as a new soldering technology, the microstructural and mechanical test were investigated. The results from this research indicate that the partial melting can yield satisfactory sider joints as long as the liquid phase acquires sufficient chemical activity. At a condition where the partial melting is effective, a direct correlation between the wettability and the surface tension is found to exist.

• Journal of Welding and Joining
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• 제14권3호
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• pp.86-92
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• 1996

This paper presents the investigations on the initial strength and its variation of Sn-Pb solder joint using different lead frames, such as are 42 alloy lead and Cu alloy lead. As the result of the lack of initial strength at solder joints, whose pitch is from 0.3 to 0.4mm, short circuit often occured at the solder joint by thermal shock or external impact. Therefore, in this paper investigations were performed on the initial strength and its variation of Sn-Pb solder joint as well as fractured mode with using different lead frames.

• Journal of Welding and Joining
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• 제31권1호
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• pp.6-10
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• 2013

• 한국정밀공학회지
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• 제29권5호
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• pp.563-571
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• 2012

In 3D integration package using TSV technology, bonding is the core technology for stacking and interconnecting the chips or wafers. During bonding process, however, warpage and high stress are introduced, and will lead to the misalignment problem between two chips being bonded and failure of the chips. In this paper, a finite element approach is used to predict the warpages and stresses during the bonding process. In particular, in-plane deformation which directly affects the bonding misalignment is closely analyzed. Three types of bonding technology, which are Sn-Ag solder bonding, Cu-Cu direct bonding and SiO2 direct bonding, are compared. Numerical analysis indicates that warpage and stress are accumulated and become larger for each bonding step. In-plane deformation is much larger than out-of-plane deformation during bonding process. Cu-Cu bonding shows the largest warpage, while SiO2 direct bonding shows the smallest warpage. For stress, Sn-Ag solder bonding shows the largest stress, while Cu-Cu bonding shows the smallest. The stress is mainly concentrated at the interface between the via hole and silicon chip or via hole and bonding area. Misalignment induced during Cu-Cu and Sn-Ag solder bonding is equal to or larger than the size of via diameter, therefore should be reduced by lowering bonding temperature and proper selection of package materials.

• Bulletin of the Korean Chemical Society
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• 제35권7호
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• pp.1985-1988
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• 2014

$Cu_2ZnSnSe_4$ (CZTSe) thin films were synthesized on transparent conducting oxide glass substrates via a simple, non-toxic, and low-cost process using a precursor solution paste. A three-step heating process (oxidation, sulfurization, and selenization) was employed to synthesize a CZTSe thin film as an absorber layer for use in thin-film solar cells. In particular, we focused on the effects of sulfurization conditions on CZTSe film formation. We found that sulfurization at $400^{\circ}C$ involves the formation of secondary phases such as $CuSe_2$ and $Cu_2SnSe_3$, but they gradually disappeared when the temperature was increased. The formed CZTSe thin films showed homogenous and good crystallinity with grain sizes of approximately 600 nm. A solar cell device was tentatively fabricated and showed a power conversion efficiency of 2.2% on an active area of 0.44 $cm^2$ with an open circuit voltage of 365 mV, a short current density of 20.6 $mA/cm^2$, and a fill factor of 28.7%.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.400-403
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• 2012

$Cu_2ZnSnSe_4$(CZTSe) is emerged as a promising material for thin-film solar cells because of non-toxic, inexpensive and earth abundant more than $Cu(In,Ga)Se_2$ materials. For fabricating compound semiconductor thin-film solar cells, CdS is widely used for a buffer layer which fabricated by a chemical bath deposition method (CBD). Through the experiment, we controlled deposition temperature and mol ratio of solution conditions to find the proper grain 크기 and exact composition. The optimum CdS layers were characterized in terms of surface morphology by using a scanning electron microscope (SEM) and atomic force microscope (AFM). The optimized CdS layer process was applied on CZTSe thin-films. The thickness of buffer layer related with device performance of solar cells which controlled by deposition time. Local surface potential of CdS/CZTSe thin-films was investigated by Kelvin probe force microscopy (KPFM). From these results, we can deduce local electric properties with different thickness of buffer layer on CZTSe thin-films. Therefore, we investigated the effect of CdS buffer layer thickness on the CZTSe thin-films for decreasing device losses. From this study, we can suggest buffer layer thickness which contributes to efficiencies and device performance of CZTSe thin-film solar cells.

• 마이크로전자및패키징학회지
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• 제14권3호
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• pp.43-49
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• 2007

웨이퍼 레벨 솔더범핑시 under bump metallurgy (UBM)의 종류와 리플로우 시간에 따른 Sn 솔더범프의 평균 금속간화합물 층의 두께와 UBM의 소모속도를 분석하였다. Cu UBM의 경우에는 리플로우 이전에 $0.6\;{\mu}m$ 두께의 금속간화합물 층이 형성되어 있었으며, $250^{\circ}C$에서 450초 동안 리플로우함에 따라 금속간화합물 층의 두께가 $4\;{\mu}m$으로 급격히 증가하였다. 이에 반해 Ni UBM에서는 리플로우 이전에 $0.2\;{\mu}m$ 두께의 금속간화합물 층이 형성되었으며, 450초 리플로우에 의해 금속간화합물의 두께가 $1.7\;{\mu}m$으로 증가하였다. Cu UBM의 소모속도는 15초 리플로우시에는 100 nm/sec, 450초 리플로우시에는 4.5 nm/sec이었으나, Ni UBM에서는 소모속도가 15초 리플로우시에는 28.7 nm/sec, 450초 리플로우시에는 1.82 nm/sec로 감소하였다.

• 마이크로전자및패키징학회지
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• 제24권1호
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• pp.83-90
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• 2017

본 연구에서는 미세피치 패키지 적용을 위한 기초 실험으로 thin ENEPIG(Electroless Nickel Electroless Palladium Immersion Gold) 도금층을 형성하여 솔더링 특성을 평가하였다. 먼저, Sn-3.0Ag-0.5Cu (SAC305) 솔더합금에 대한 thin ENEPIG 도금층의 젖음 특성이 평가되었으며, 순차적인 솔더와의 반응에 대한 계면반응 및 솔더볼 접합 후 고속 전단 시험을 통한 접합부 기계적 신뢰성이 평가되었다. 젖음성 시험에서 침지 시간이 증가함에 따라 최대 젖음력은 증가하였으며, 5초의 침지 시간 이후에는 최대 젖음력이 일정하게 유지되었다. 초기 계면 반응 동안에는 $(Cu,Ni)_6Sn_5$ 금속간화합물과 P-rich Ni 층이 SAC305/ENEPIG 계면에서 관찰되었다. 연장된 계면반응 후에는 P-rich Ni 층이 파괴 되었으며, 파괴된 P-rich Ni 층 아래에는 $(Cu,Ni)_3Sn$ 금속간화합물이 생성되었다. 고속 전단 시험의 경우, 전단속도가 증가함에 따라 취성 파괴율이 증가하였다.