• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.475-475
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• 2013

Cuprous oxide ($Cu_2O$)는 밴드갭이 2.17 eV p-type 산화물 반도체로써 태양에너지 변환기, photocatalysis (광촉매작용), 센서, 스위칭 메모리 등 응용이 다양한 재료이다. 산화물 반도체의 기본 특성은 나노/마이크로 범위 안에서 재료의 표면형태, 크기, 구조와 형상 공간방향등에 크게 영향을 받는다. 그렇기 때문에 원하는 $Cu_2O$ 특성을 얻기 위해서 성장 거동을 아는 것은 매우 중요하다. RF 마그네트론 스퍼터법으로 rod 성장 사례는 잘 알려지지 않았다. 그래서 RF 마그네트론 스퍼터법 $Cu_2O$ rod 형성 실험을 통하여 $Cu_2O$ 형성과 성장 거동을 알아보았다. RF 마그네트론 스퍼터법으로 $Cu_2O$ rod를 glass 기판 위에 Cu metal target을 이용하여 형성시켰다. $Cu_2O$ rod 합성을 위해 기판온도 및 산소분압 O2/(Ar+O2)=3%, 5%, 7% 증착시간 등을 변화시켜 실험하였다. 성장된 rod의 분석은 XRD, SEM으로 확인하였다. 성장 거동은 증착온도와 증착시간에 차이를 보였다. 증착온도 $550^{\circ}C$에서 rod가 생성되는 것을 관찰하였다. 증착시간이 길어질수록 rod 길이가 길어지고 일정 시간이 지나면 rod의 길이 성장보다는 두께(폭)가 성장하는 것을 확인하였다. 증착온도 $550^{\circ}C$ 그리고 산소분압 3%, 5%, 7% 조건에서 rod 합성 실험을 하였을 때 3%, 5% 조건에서 rod의 성장을 확인하였다. 이때 3%, 5% 산소분압에 따라 rod의 모양이 변화하였다. 하지만 7% 조건에서는 rod가 성장하지 않았다. 이유는 3%, 5%에서는 Cu metal peak을 확인하였지만, 7% 조건에서는 Cu metal peak이 없었다. 이로부터 Cu metal이 $Cu_2O$ rod 생성에 영향을 미치는 중요한 요소임을 예상할 수 있었다.

• Clean Technology
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• v.23 no.2
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• pp.172-180
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• 2017

Thermodynamic evaluation indicates that nearly 100% conversion of elemental mercury to oxidized mercury can be attained by HCl of several tens of ppm level at the temperature window of SCR reaction. Cu-, Fe-, Mn-chloride loaded $V_2O_5-WO_3/TiO_2$ catalysts revealed good NO removal activity at the operating temperature window of SCR process. The catalysts with high desorption temperature indicating adsorption strength of $NH_3$ revealed higher NO removal activity. The HCl fed to the reaction gases promoted the oxidation of mercury. However, the activity for the oxidation of elemental mercury to oxidized mercury by HCl was suppressed by $NH_3$ inhibiting the adsorption of HCl to catalyst surface under SCR reaction condition containing $NH_3$ for NO removal. Metal chloride loaded $V_2O_5-WO_3/TiO_2$ catalysts showed much higher activity for mercury oxidation than $V_2O_5-WO_3/TiO_2$ catalyst without metal chloride under SCR reaction condition. This is primarily attributed to the participation of chloride in metal chloride on the catalyst surface promoting the oxidation of elemental mercury.

• Analytical Science and Technology
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• v.15 no.3
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• pp.256-262
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• 2002

After porous filters were manufactured using cordierite powder whose mean paricle size was 200${\mu}m$, they were loaded with catalysts such as $V_2O_5$, CuO and $LaCoO_3$ by vacuum impregnation method. And the NOx/SOx simultaneous removal efficiency was measured by passing NO and $SO_2$ through catalyst-loaded ceramic filters. The cordierite porous filters had the apparent porosity of 61.6%, the compressive strength of 12.3 MPa and the pressure drop of 147 pa at the face velocity of 5 cm/sec. According to the analysis of NO/$SO_2$ simultaneous removal efficiency, perovskite $LaCoO_3$ catalyst was the most efficient for the simultaneous NO and $SO_2$ removal. The $LaCoO_3$ catalyst-loaded filter could remove more than 90% for NO and more than 80% for $SO_2$.

• Journal of the Korean Electrochemical Society
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• v.15 no.3
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• pp.149-153
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• 2012

The $Cu_2O/TiO_2$ inverse opal heterojunction arrays were developed by electrochemical deposition of $Cu_2O$ nanoparticles on $TiO_2$ inverse opal arrays. The $Cu_2O$ nanoparticles completely filled the inner pores of $TiO_2$ inverse opal film (prepared by liquid phase deposition with an average thickness of 400 nm) and covered the entire area; exhibiting high crystalline properties of anatase and cubic phase from $TiO_2$ and $Cu_2O$, respectively. From asymmetric current-voltage profile, it was noticeable that a heterojunction was well formed for charge transport from $Cu_2O$ to $TiO_2$ film resulting from the enhanced charge separation yield. In addition, increased photocurrent of 0.19 $mA/cm^2$ (versus 0.08 $mA/cm^2$ under dark condition) was obtained at -0.35 V from the heterojunction structure in the 0.5M $Na_2SO_4$ solution.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.137-138
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• 2011

구리 이온은 -0.40V (vs. SCE)에서 전기화학적 환원이 일어나는 반면, 니켈 이온은 -1.19V (vs. SCE)에서 전착이 발생한다. 따라서, 단일 도금욕조 내에서 Ni-Cu 합금도금층을 제조하기 위해서는 두 금속 이온종 간의 전위차를 줄여주어야 하는데, 이를 위해 본 연구에서는 $Na_3C_6H_5O_7{\cdot}2H_2O$를 착화제로 사용하였다. 다양한 Ni-Cu 합금 도금층의 조성을 얻기 위하여 기본 도금욕 내 황산니켈과 황산구리의 비율을 10:1로 설정하였다. 도금 공정 조건에 따른 합금 도금층 조성 변화를 관찰하기 위하여 도금액 pH와 교반 속도에 따른 도금층 조성 변화를 분석하였으며, 도금액의 UV-VIS과 도금층의 XRD 와 SEM 측정을 통하여 도금욕과 도금층 간의 상관 관계를 유추하였다. 본 도금액에 사용된 $Na_3C_6H_5O_7{\cdot}2H_2O$ 착화제의 효과는 pH3에서 가장 현저하였으며, pH 변화 및 교반 속도 변화를 이용하여 다양한 합금 조성을 얻을 수 있었다.

• Proceedings of the KAIS Fall Conference
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• 2011.12a
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• pp.196-199
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• 2011

In this study we synthesized mesoporous carbon supported CuO by using mesoporous silica i.e. SBA-15 as the template and cupric nitrate trihydrate ($Cu(NO_3)_23H_2O$)as copper source. The porous CuO was characterized with XRD, TGA, SEM and BET. The result reveals porous CuO has good crystal structure with uniform size of spherical crystal particles. The surface are a ($S_{BET}$) of porous CuO was found to be $153.46m^2g^{-1}$ with a total pore volume ($V_p$)of$0.1516cm^3g^{-1}$ and average pore size of 3.9 nm which was much higher than that of commercial CuO ($S_{BET}$, $7.6m^2g^{-1}$; $V_p$, $0.01cm^3g^{-1}$). The obtained porous CuO was studied for adsorption of $CO_2$and the maximum $CO_2$ adsorption capacity was found to be 67.5 mg/g of the sorbent at $25^{\circ}C$.

• Korean Chemical Engineering Research
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• v.52 no.2
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• pp.247-255
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• 2014

$La_{0.8}Sr_{0.2}CuO_3$ powder with the perovskite structure was prepared as electrode catalyst using citrate method. Porous electrode was made with as-prepared catalyst, carbon as supporter and polytetrafluoroethylene (PTFE) as hydrophobic binder. As results of potentiostatic electrolysis with potential of -1.5~-2.5 V vs. Ag/AgCl in 0.1, 0.5 and 1.0 M KOH at 5 and $10^{\circ}C$ on the porous electrode, liquid products were methanol, ethanol, 2-propanol and 1, 2-butanol regardless reaction temperature, while gas products were methane, ethane and ethylene at $5^{\circ}C$, and methane, ethane and propane at $10^{\circ}C$ respectively. Optimal potentials for $CO_2$ reduction in the view of over all faradic efficiency were high values (-2.0 and -2.2 V) for gas products whereas low potential (-1.5 V) for liquid products regardless of concentration and temperature.

• ETRI Journal
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• v.35 no.6
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• pp.1156-1159
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• 2013

We investigate the characteristics of $Cu_2O$ thin films deposited through the addition of $N_2$ gas. The addition of $N_2$ gas has remarkable effects on the phase changes, resulting in improved electrical and optical properties. An intermediate phase ($6CuO{\cdot}Cu_2O$) appears at a $N_2$ flow rate of 1 sccm, and a $Cu_2O$ (200) phase is then preferentially grown at a higher feeding amount of $N_2$. The optical and electrical properties of $Cu_2O$ thin films are improved with a sufficient $N_2$ flow rate of more than 15 sccm, as confirmed through various analyses. Under this condition, a high bandgap energy of 2.58 eV and a conductivity of $1.5{\times}10^{-2}$ S/cm are obtained. These high-quality $Cu_2O$ thin films are expected to be applied to $Cu_2O$-based heterojunction solar cells and optical functional films.

• Journal of the Korean institute of surface engineering
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• v.52 no.5
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• pp.258-264
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• 2019

Assembling heterostructures by combining dissimilar oxide semiconductors is a promising approach to enhance charge separation and transfer in photoelectrochemical (PEC) water splitting. In this work, the CuO nanorods array/$Cu_2O$ thin film bilayered heterostructure was successfully fabricated by a facile method that involved a direct electrodeposition of the $Cu_2O$ thin film onto the vertically oriented CuO nanorods array to serve as the photoelectrode for the PEC water oxidation. The resulting copper-oxide-based heterostructure photoelectrode exhibited an enhanced PEC performance compared to common copper-oxide-based photoelectrodes, indicating good charge separation and transfer efficiency due to the band structure realignment at the interface. The photocurrent density and the optimal photocurrent conversion efficiency obtained on the CuO nanorods/$Cu_2O$ thin film heterostructure were $0.59mA/cm^2$ and 1.10% at 1.06 V vs. RHE, respectively. These results provide a promising route to fabricating earth-abundant copper-oxide-based photoelectrode for visible-light-driven hydrogen generation using a facile, low-cost, and scalable approach of combining electrodeposition and hydrothermal synthesis.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.167.2-167.2
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• 2015

고 이동도(~10 cm/Vs), 낮은 공정온도 및 높은 투과율 등의 특성을 갖는 산화물 반도체는 저 소비전력, 대면적화 및 고해상도 LCD Panel에 적합한 재료로서 현재 일부 Mobile Panel 및 TFT-LCD Panel의 양산에 적용되고 있으나, 향후 UHD급(4 K, 8 K)의 대형, 고해상도 Panel에의 적용을 위해서는 30 cm2/Vs 이상의 고 이동도 재료의 개발 및 저 저항 배선의 적용에 따른 소자 신뢰성의 개선이 필요하다. Cu는 대표적인 저 저항 배선 재료로 일부 양산에 적용되고 있으나, Cu 전극과 산화물 반도체의 계면에서 Cu원자의 확산 및 Cu-O 층의 형성에 의한 소자 특성 저하의 문제가 있다. 본 연구에서는 고 이동도의 In doped-ZTO계 산화물 반도체를 기반으로 채널 층과 Cu source-Drain layer의 계면에서의 Cu element의 거동 및 TFT 소자 특성과의 상관관계를 고찰하고, 계면에 형성된 Cu-O layer에 대해 높은 전자 친화도를 갖는 Ca element를 첨가에 의한 TFT 소자 특성의 변화를 관찰하였다. 본 연구에서는 이러한 효과로 인한 소자 신뢰성의 향상을 기대하였으며, 우선 In doped-ZTO 채널 층에 Cu와 CuCa 2at% source-drain을 적용한 TFT 특성을 확인하였다. 그 결과, Cu는 Field-effect mobility: ~17.67 cm2/Vs, Sub-threshold swing: 0.76 mV/decade 및 Vth:, 4.40 V의 결과가 얻어졌으며 CuCa 2at%의 경우 Field-effect mobility: ~17.84 cm2/Vs, Sub-threshold swing: 0.86 mV/decade 및 Vth:, 5.74 V의 결과가 얻어졌다. 소자신뢰성 측면에서도 Bias Stress의 변화량 ${\delta}Vth$의 경우 Cu : 4.48 V에 대해 CuCa 2at% : 2.81 V로 ${\delta}Vth$:1.67 V의 개선된 결과를 얻었다.