• Journal of Welding and Joining
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• v.20 no.6
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• pp.783-788
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• 2002

Sn-Ag-Cu solder is known as most competitive in many kinds of Pb-free solders. In this study, effects of solderability with plated layers such as Cu, Cu/Sn, Cu/Ni and Cu/Ni/Au were investigated. Sn-3.5Ag-0.7Cu solder balls were reflowed in commercial reflow machine (peak temp.:$250^{\circ}C$and conveyer speed:0.6m/min). In wetting test, immersion speed was 5mm/sec., immersion time 5sec., immersion depth 4mm and temperature of solder bath was $250^{\circ}C$. Wettability of Sn-3.5Ag-0.7Cu on Cu, Cu/Sn ($5\mu\textrm{m}$), Cu/Ni ($5\mu\textrm{m}$), and Cu/Ni/Au ($5\mu\textrm{m}/500{\AA}$) layers was investigated. Cu/Ni/Au layer had the best wettability as zero cross time and equilibrium force, and the measured values were 0.93 sec and 7mN, respectively. Surface tension of Sn-3.5Ag-0.7Cu solder turmed out to be 0.52N/m. The thickness of IMC is reduced in the order of Cu, Cu/Sn, Cu/Mi and Cu/Ni/Au coated layer. Shear strength of Cu/Ni, Cu/Sn and Cu was around 560gf but Cu/Ni/Au was 370gf.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.2
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• pp.1-9
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• 2002

The intermetallic formation between Sn-Ag-(Cu) solders and metal pads in a real BGA package was characterized using SEM, EDS, and XRD. The intermetallic phase formed in the interface between Sn-Ag-Cu and Au/Ni/Cu pad is likely to be ternary compound of $(Cu,Ni)_6Sn_5$ from EDS analysis High concentration of Cu was observed in the solder/Ni interface. XRD analysis confirmed that $\eta -Cu_6 Sn_5$ type was intermetallic phase formed in the interface between Cu containing solders and Ni substrates and $Ni_3$Sn_4$ intermetallic was formed in the Sn-Ag solder/Ni interface. The thickness of intermetallic phase increased with the reflow times and Cu concentration in solder.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.84-87
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• 2003

Since Pb-free solder alloys have been used extensively in microelectronic packaging industry, the interaction between UBM (Under Bump Metallurgy) and solder is a critical issue because IMC (Intermetallic Compound) at the interface is critical for the adhesion of mechanical and the electrical contact for flip chip bonding. IMC growth must be fast during the reflow process to form stable IMC. Too fast IMC growth, however, is undesirable because it causes the dewetting of UBM and the unstable mechanical stability of thick IMC. UP to now. Ni and Cu are the most popular UBMs because electroplating is lower cost process than thin film deposition in vacuum for Al/Ni(V)/Cu or phased Cr-Cu. The consumption rate and the growth rate of IMC on Ni are lower than those of Cu. In contrast, the wetting of solder bumps on Cu is better than Ni. In addition, the residual stress of Cu is lower than that of Ni. Therefore, the alloy of Cu and Ni could be used as optimum UBM with both advantages of Ni and Cu. In this paper, the interfacial reactions of Sn-3.5Ag-0.7Cu solder on Ni-xCu alloy UBMs were investigated. The UBMs of Ni-Cu alloy were made on Si wafer. Thin Cr film and Cu film were used as adhesion layer and electroplating seed layer, respectively. And then, the solderable layer, Ni-Cu alloy, was deposited on the seed layer by electroplating. The UBM consumption rate and intermetallic growth on Ni-Cu alloy were studied as a function of time and Cu contents. And the IMCs between solder and UBM were analyzed with SEM, EDS, and TEM.

• Journal of the Korean Magnetics Society
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• v.7 no.1
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• pp.19-24
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• 1997

Composition and process conditions for low temperature sintered NiCuZn ferrites were investigated, so as to fabricate multilayered chip inductor. The$Fe_2O_3$ deficiency for low temperature sintering was decreased with NiO contents of NiCuZn ferrites. The permeability of NiCuZn ferrites can be controlled in the range of 12~562 with the variation of NiO and $Co_3O_4$ contents. The $Q_{max} $ frequency of NiCuZn ferrites was decreased from 50 MHz to 3 MHz linearly with permeability increase from 60 to 560. The relation between the $Q_{max}$ frequency(Y) and permeability(X) of NiCuZn ferrites was expressed with the following empirical equation, logY=4.2-1.4logX.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.338-343
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• 2010

As an alternative to the W plug used in MOSFETs, a Cu plug with a NiSi contact using Ta / TaN as a diffusion barrier is currently being considered. Conventionally, Ni was first deposited and then NiSi was formed, followed by the barrier and Cu deposition. In this study, Ti was employed as a barrier material and simultaneous formation of the NiSi contact and Cu plug / Ti barrier was attempted. Cu(100 nm) / Ti / Ni(20 nm) with varying Ti thicknesses were deposited on a Si substrate and annealed at $4000^{\circ}C$ for 30 min. For comparison, Cu/Ti/NiSi thin films were also formed by the conventional method. Optical Microscopy (OM), Scanning Probe Microscopy (SPM), X-Ray Diffractometry (XRD), and Auger Electron Microscopy (AES) analysis were performed to characterize the inter-diffusion properties. For a Ti interlayer thicker than 50 nm, the NiSi formation was incomplete, although Cu diffusion was inhibited by the Ti barrier. For a Ti thickness of 20 nm and less, an almost stoichiometric NiSi contact along with the Cu plug and Ti barrier layers was formed. The results were comparable to that formed by the conventional method and showed that this alternative process has potential as a formation process for the Cu plug/Ti barrier/NiSi contact system.

• Journal of the Korean Magnetics Society
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• v.9 no.5
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• pp.251-255
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• 1999

NiFe(60 $\AA$)/Co(0$\AA$$\leq$x$\AA$$\leq$15$\AA$)/Cu(60$\AA$)/Co(30$\AA$) spin valve thin films were prepared on 4$^{\circ}$ tilt-cut Si(111) substrates with a 50 $\AA$ thick Cu underlayer without applying any external magnetic field during the deposition, and the effects of inserted ultrathin Co layer on magnetic anisotropy and GMR properties of the NiFe(60 $\AA$)/Cu(60$\AA$)/Co(30$\AA$) spin valves were investigated. As the ultrathin Co layer was inserted into the NiFe/Cu interface of the spin valves, GMR ratio was increased from about 1.5% to 3.5%, and the easy axis of NiFe(60 $\AA$) layer was rotated by 90$^{\circ}$. Accordingly, it was aligned along the same direction with the easy axis of Co(30 $\AA$)layer. Therefore, squared R-H curves was obtained in the spin valves, which is favorable properties for the digital GMR devices such as MRAM. In order to investigate the change of magnetic anisotropy of NiFe layer of the spin valves in more details,XRD measurement was performed using NiFe(500 $\AA$) and NiFe(500 $\AA$)/Co(10 $\AA$) thin films on the same templates. Strong (220) NiFe peak was observed in both films regardless of the inserted Co layer, so it was thought that the variation of magnetic anisotropy of NiFe layer is from the interface effect, the change of interface from NiFe/Cu to NiFe/Co, rather than the volume effect such as the change of magnetocrystalline effect.

• Journal of the Korean Chemical Society
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• v.53 no.3
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• pp.233-243
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• 2009

We have investigated the infrared spectra for CO adsorbed on silica supported nickel(Ni-Si$O_2$), silica supported copper(Cu-Si$O_2$), silica supported nickel-copper alloys(Ni/Cu-Si$O_2$) of several compositions with varying CO pressures(0.2 $torr{\sim}$50 torr) at room temperature and on pumping to vacumn at room temperature within the frequency range of 1500 $cm^{-1}{\sim}2500\;cm^{-1}$. Four bands(2059.6 $cm^{-1},\;{\sim}$2036.5 $cm^{-1},\;{\sim}$ 1868.7 $cm^{-1},\;{\sim}$ 1697.1 $cm^{-1}$) were observed for Ni-Si$O_2$, two bands($\sim$2115.5 $cm^{-1},\;{\sim}$1743.0 $cm^{-1}$) were observed for Cu-Si$O_2$ and five bands(${\sim}2123.2\;cm^{-1}$, 2059.6 $cm^{-1},\;{\sim}$2036.4 $cm^{-1},\;{\sim}$1899.5 $cm^{-1},\;{\sim}$1697.1 $cm^{-1}$) were observed for Ni/Cu-Si$O_2$. These absorption bands correspond with those of the previous reports approximately. The bands below 1800 $cm^{-1}$ were only observed with Ni metal or Ni/Cu alloy crystal plane containing step at room temperature and the ${\sim}1697.1\;cm^{-1}$ bands observed with Ni-Si$O_2$ and Ni/Cu-Si$O_2$ may be ascribed to CO molecule adsorbed on the adsorption sites near step. The bands below 2000 $cm^{-1}$ were rarely observed with Cu metal crystal plane at room temperature and the 1743.0 $cm^{-1}$ bands may be ascribed to CO molecule adsorbed on the adsorption sites near step. The band shifts of adsorbed CO with varing Cu contents from 0 to 0.5 mole fraction at the same CO pressure or at the same pumping time to vacumn were below 21 $cm^{-1}$. and comparatively small than those with other ⅠB metal addition. It may means ligand effect of Cu d electron is small.

• Korean Journal of Metals and Materials
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• v.50 no.6
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• pp.419-425
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• 2012

The purpose of this research was to develop a low Ni austenitic cast iron through replacing Ni by Cu and Mn because they are cheaper than Ni. The effect of the Cu content (6-12 wt%) on the microstructure characteristics was investigated in Fe-3%C-16%(Ni+Cu+Mn) cast iron. Contrary to general effect of the Cu on cast iron, the result of the microstructure analysis indicated that bainite and cementite were formed in high Cu content (>8 wt%Cu). A crystallized Cu-solution (Cu-Mn) phase and MnS in the Cu-solution were formed. The quantity of those phases increased as the Cu content increased. Consequently, the high Cu content in the composition ratio (Ni+Cu+Mn=16%) caused the formation of Cu-Mn/MnS and those phases decreased the effect of Cu and Mn on austenite formation. For this reason, bainite and cementite were formed in high Cu content.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.938-944
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• 1997

Cu-Ni thin film strain gauges for diaphragm-type pressure sensors were developed. Thin films of Cu-Ni alloys of various compositions were deposited onto glass and stainless steel substrates by RF magnetron sputtering. The effects of composition substrate temperature Ar partial pressure and aging on the electrical properties of Cu-Ni film strain gauges in the thickness range 500~2000$\AA$ are discussed. The maximum resistivity(95.6 $\mu$$\Omega$cm) is obtained from 53wt%Cu-47wt%Ni films while the temperature coefficient of resistance(TCR) becomes minimum(25.6ppm/$^{\circ}C$). The gauge factor is about 1.9.

• Applied Microscopy
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• v.45 no.1
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• pp.9-15
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• 2015

In the present study, microstructural evolution in CuCrFeNi, CuCrFeNiMn, and CuCrFeNiMnAl alloys has been investigated. The as-cast CuCrFeNi alloy consists of a single fcc phase with the lattice parameter of 0.358 nm, while the as-cast CuCrFeNiMn alloy consists of (bcc+fcc1+fcc2) phases with lattice parameters of 0.287 nm, 0.366 nm, and 0.361 nm. The heat treatment of the cast CuCrFeNiMn alloy results in the different type of microstructure depending on the heat treatment temperature. At $900^{\circ}C$ a new thermodynamically stable phase appears instead of the bcc solid solution phase, while at $1,000^{\circ}C$, the heat treated microstructure is almost same as that in the as-cast state. The addition of Al in CuCrFeNiMn alloy changes the constituent phases from (fcc1+fcc2+bcc) to (bcc1+bcc2).