• Title/Summary/Keyword: CuInS2

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MINERAL STATUS OF GRAZING PHILIPPINE GOATS II. THE NUTRITION OF SELENIUM, COPPER AND ZINC OF GOATS IN LUZON ISLAND

  • Fujihara, T.;Matsui, T.;Hayashi, S.;Robles, A.Y.;Serra, A.B.;Cruz, L.C.;Shimizu, H.
    • Asian-Australasian Journal of Animal Sciences
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    • v.5 no.2
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    • pp.389-395
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    • 1992
  • Nutritional status of trace minerals (Se, Cu and Zn) in goats grazed on the native pasture was investigated during 2 years in Luzon Island, Republic of the Philippines. Three regions (South, Central and North) were objected to collect the samples of blood of goats and forages on the pasture. Se content of major species forages in the pasture was $24.7{\mu}g/kg$ DM, and was clearly lower than the value ($200{\mu}g/kg$ DM) required commonly for ruminant feed. The Cu and Zn contents of all forage samples ranged from 7.6 to 24.3 and 11.4 to 50.6 mg/kg DM, respectively, and these values almost exceeded the dietary level required for sheep. The blood Se levels in about 55% of goats grazed alone were under the normal range ($20{\mu}g/l$), but it in goats fed some concentrates as a supplement were almost within a normal ranges ($20-200{\mu}g/l$), though the Cu content of forages almost exceeded the dietary level required commonly. The 4-13% of plasma samples of goats without supplement showed the Zn level below the lower limit (0.6 mg/l) of normal range. The Zn deficiency was mostly improved by the addition of a small amount of concentrates. From these results, it will be necessary to study about unstable Cu status of grazed goats in Luzon Island regarding an interaction of Cu and other elements known to relate to the malabsorption of dietary Cu.

Effects of Alloying Elements on the Microstructure and Tensile Properties of Rapidly Solidified Al-Mg Alloys (급속응고한 Al-Mg 합금의 미세조직 및 인장특성에 미치는 첨가원소의 영향)

  • Park, Hyun-Ho;Park, Chong-Sung;Kim, Myung-Ho
    • Journal of Korea Foundry Society
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    • v.17 no.4
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    • pp.356-364
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    • 1997
  • In order to study effects of Cu and Be on the microstructure and tensile properties of rapidly solidified Al-Mg alloys, Al-Mg-Cu-Be alloys have been rapidly solidified by inert gas atomization process. Microstructure of rapidly solidified Al-Mg-Cu-Be powders exhibited refinement and good dispersion of Be particles as increasing of solidification rate. Solidification rate of atomized powders was estimated to be about $5{\times}10^{3{\circ}}C/s$. Inert gas atomized Al-Mg-Cu-Be powders were hot-processed by vacuum hot pressing at $450^{\circ}C$ under 100 MPa and hot extruded with reduction ratio in area of 25: 1 at $450^{\circ}C$. The extruded Al-Mg-Cu-Be powders consisted of recrystallized fine Al grains and homogeneously dispersed fine Be particles, and exhibited improved tensile properties with increase in Cu content. $Al_2CuMg$ compounds precipitated in grain and grain boundaries of Al-Mg-Cu-Be alloys with aging heat treatment after solution treatment. Hardness and tensile properties were improved by increasing Cu content and Be addition. Compared with extruded Al-Mg-Cu powders, the extruded Al-Mg-Cu-Be powders exhibited finer recrystallized grains and improved tensile properties by dispersion hardening of Be and subgrain boundaries pinned by fine Be particles. After aging treatment, hardness and tensile properties were improved due to restricted precipitation by increasing of dislocation density around Be particles in matrix.

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The Microstructure and physical properties of electroplated Cu films (열처리에 따른 Cu 전해도금막의 미세구조 및 물리적성질 변화)

  • 권덕렬;박현아;김충모;이종무
    • Journal of the Korean Vacuum Society
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    • v.13 no.2
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    • pp.72-78
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    • 2004
  • Cu seed layers deposited by magnetron sputtering onto tantalum nitride barrier films were treated with ECR plasma and then the copper films were electroplated and rapid thermal annealed in an argon or nitrogen atmosphere at various temperatures ranging from 200 to $500^{\circ}C$. Changes in the microstructure and physical properties of the copper films electroplated on the hydrogen ECR plasma cleaned copper seed layers were investigated using X-ray diffraction (XRD), electron back-scattered diffraction (EBSD), and atomic force microscopy (AFM) analyses. It was found that the copper film undergoes complete recrystallization during annealing at a temperature higher than $400^{\circ}C$. The resistivity of the Cu film tends to decrease and the degree of (111) preferred orientation tends to increase as the annealing temperature increases. Theoptimum annealing condition for obtaining the film with the lowest resistivity, the smoothest surface and the highest degree of the (111) preferred orientation is rapid thermal annealing in a nitrogen atmosphere at $400^{\circ}C$ for 120 s. The resistivity and the surface roughness of the electroplated copper film annealed under this condition are 1.98 $\mu$O-cm and 17.77 nm, respectively.

Fabrication of P-type Transparent Oxide Semiconductor SrCu2O2 Thin Films by RF Magnetron Sputtering (RF 마그네트론 스퍼터링을 이용한 p 타입 투명전도 산화물 SrCu2O2 박막의 제조)

  • Seok, Hye-Won;Kim, Sei-Ki;Lee, Hyun-Seok;Lim, Tae-Young;Hwang, Jong-Hee;Choi, Duck-Kyun
    • Korean Journal of Materials Research
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    • v.20 no.12
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    • pp.676-680
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    • 2010
  • Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

Photovoltaic Properties of Cu(InGa)$Se_2$ Solar Cells with Sputter Conditions of Mo films (Mo 박막의 성장조건에 따른 Cu(InGa)$Se_2$ 박막 태양전지의 광변환효율)

  • Kim, S.K.;Lee, J.C.;Kang, K.H.;Yoon, K.H.;Park, I.J.;Song, J.;Han, S.O.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05c
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    • pp.63-66
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    • 2002
  • Bi-layer Mo films were deposited on sodalime glass substrates using DC magnetron sputtering. As the gas pressure and power density, the resistivity varied from $1.5{\times}10^{-5}$ to $4.97{\times}10^{-4}{\Omega}{\cdot}cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The microstructure of the compressive stress films which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. Also, The highest efficiency was 15.2% on 0.2 $cm^2$. The fill factor, open circuit voltage and short circuit current were 63 %, 570 m V and 42.6 $mA/cm^2$ respectively.

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Characterization of TiB2 Particle Reinforced Cu Matrix Composites Processed by Turbulent In-situ Mixing (난류용탕 in-situ 합성법에 의해 제조된 TiB2 입자강화 Cu 기지 복합재료의 특성)

  • Kim J. H.;Yun J. H.;Lee G. G.;Choi I. D.;Park Y. H.;Cho K. M.;Park I. M.
    • Korean Journal of Materials Research
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    • v.15 no.12
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    • pp.809-813
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    • 2005
  • A copper matrix composite reinforced by turbulent in-situ $TiB_2$ nanoparticle was Prepared by reactions of boron ana titanium. The microstructure, mechanical and electrical properties of the as-drawn composites were investigated. The results showed that the formed $TiB_2$ particles, which had a size of about from 50 to 200nm, exhibited a homogeneous dispersion in the copper matrix. Due to their reinforcement, the hardness and Young's modulus of $Cu-TiB_2$ composites were enhanced with increasing the cooling rate. Moreover, the electrical conductivity of the composites were improved with increasing the cooling rate.

Electrochemical Properties of Binuclear Nickel(II) and Copper(II) Complexes with Tetradentate Schiff Base in Aprotic Solvents (1) (비수용매에서 이핵성 네자리 Schiff Base Nickel(II) 및 Copper(II) 착물들의 전기화학적 성질 (제 1 보))

  • Chjo Ki-Hyung;Choi Yong-Kook;Seo Seong-Seob;Lee Song-Ju
    • Journal of the Korean Chemical Society
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    • v.35 no.1
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    • pp.24-37
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    • 1991
  • We synthesized the binuclear Tetradentate Schiff base nickel(II) and copper(II) complexes ; [Ni(II)$_2$(SMPO)$_2$(L)$_2$], [Ni(II)$_2$(SPPD)$_2$(L)$_2$] and [Cu(II)$_2$(SMPD)$_2$] and [Cu(II)$_2$(SPPD)$_2$] (where, L : Py, DMSO and DMF). We identified the structure of these complexes by elemental analysis, IR-spectrum, T.G.A, D.S.C and ESR measurements. According to the results of cyclic voltammetry and DPP measurements in aprotic solvent included 0.1M TEAP as supporting electrolyte, we knew that diffusional controlled redox process of one step with one electron was irreversible process in 0.1M TEAP-Py solution. Also it was reversible or quasi reversible process in 0.1M TEAP-DMSO solution and reversible or E.C reaction mechanism in 0.1M TEAP-DMF solution at mononuclear complexes ; [Cu(II)(SOPD)] and [Ni(II)(SOPD)(L)$_2$]. But, we knew that diffusional controlled redox process of two step for one electron of binuclear complexes was as follows. The values of redox potential for dimeric complexes in 0.1M TEAP-L solution (where, L ; Py, DMSO and DMF) with scan rate 100mV/sec.

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Heavy Metal Detection and Removal in Artificial Wastewater Using Two-Component System Based Recombinant Bacteria (Two-component System 기반 재조합균을 이용한 인공폐수에서의 중금속 인지 및 제거)

  • Ravikumar, Sambandam;Hong, Soon-Ho;Yoo, Ik-Keun
    • Korean Journal of Microbiology
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    • v.48 no.3
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    • pp.187-191
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    • 2012
  • Two-component system (TCS)-based bacterial zinc and copper biosensors, in which green fluorescent protein (GFP) is expressed under the control of zraP and cusC promoter in ZraS/R and CusS/R TCS, were evaluated in artificial wastewater. Bacterial biosensors developed in this study efficiently expressed GFP by the recognition of $Zn^{2+}$ and $Cu^{2+}$ in artificial wastewater. Secondly, TCS-based zinc and copper removing bacteria with the peptide displayed on cell surface were examined in artificial wastewater. Zinc and copper removing bacteria expressed the peptide as a fusion protein such as OmpC-ZBP (zinc binding peptide) and OmpC-CBP (copper binding peptide) on the cell surface when sensing exogenous $Zn^{2+}$ and $Cu^{2+}$ through ZraS/R and CusS/R TCS. The recombinant cell expressing metal-adsorbing peptide could efficiently remove copper and zinc (15 and 18 mg/g dry cell weight, respectively) in artificial wastewater. Therefore, it was demonstrated that the TCS-based recombinant cell for the recognition or removal of heavy metal functions well in artificial wastewater environment.

Interlayer Coupling Field in Spin Valves with CoEe/Ru/CoFe/FeMn Synthetic Antiferromagnet (Synthetic antiferromagnet CoFe/Ru/CoFe/FeMn을 이용한 스핀 밸브 구조의 interlayer coupling field)

  • Kim, K.Y.;Shin, K.H.;Kim, H.J.;Jang, S.H.;Kang, T.
    • Journal of the Korean Magnetics Society
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    • v.10 no.5
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    • pp.203-209
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    • 2000
  • Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P 1)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with natural oxide were prepared by dc magnetron sputtering system. We have changed only the thickness in free layers and the thickness difference (Pl-P2) in two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on interlayer coupling field in spin valve with synthetic antiferromagnet. According to the decrease of free layer thickness, interlayer coupling field was increased due to the magnetostatic coupling(orange peel coupling). In case of t$\_$P1/>t$\^$P2/, interlayer coupling field agreed well with the modified Neel model suggested in conventional spin valve structures by Kools et al. However, in case of t$\_$P1/>t$\^$P2/, it was found that the interlayer coupling field was not explained by the Modified Neel Model and was confirmed the necessity of further remodeling. The dependence of Cu thickness on the interlayer coupling field was investigated and 10 Oe of interlayer coupling field was obtained when the Cu thickness is 32 $\AA$.

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