• Progress in Superconductivity
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• v.6 no.1
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• pp.84-88
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• 2004

The polycrystalline superconductor $SmBa_2$$Cu_3$$O_{x}$ is fabricated, and intergranular magnetic properties are investigated using the critical state model, from which some useful parameters such as the critical current density and the intergranular volume fraction are obtained. The curve fitting for M-H hysteresis loop shows that the intergranular critical current density of $SmBa_2$$Cu_3$$O_{x}$ / decreases in the form of ($1-T/T_{c}$ )$^{1.5}$ . The intergranular volume fraction is influenced by granular morphology. From SEM image, the grains of $SmBa_2$$Cu_3$$O_{x}$ are found to be randomly shaped. This mean:; that the intergranular volume fraction of $SmBa_2$$Cu_3$$O_{x}$ / should be smaller than those of superconductors, of which grains are plate-shaped such as Tl-based superconductor.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.47-53
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• 2002

In this study, two different (NiCuZn)-ferrite which were fabricated by using ultra-fine powders synthesized by the wet processing and conventionally commercialized powder, were investigated and compared each other in terms of the low temperature sintering and electromagnetic properties. Composition of x and w in $(Ni_{0.4-x}Cu_xZn_{0.6})_{1+w}(Fe_2O_4)_{1-w}$ were controlled as 0.2 and 0.03, respectively. The sintering temperature were $900^{\circ}C$ for ultra-fine powders by way of initial heat treatment and $1150^{\circ}C$ for commercialized powders. The (NiCuZn)-ferrite by ultra-fine powders showed love. sintering temperature than that of commercialized powders by over $200^{\circ}C$, and excellent electromagnetic properties such as the quality factor which is a important factor in the multi-layered chip inductor. In addition, characteristics of B-H hysteresis, crystallinity, microstructure and powder morphology were analyzed by a vibrating sample method(VSM), x-ray diffractometer(XRD), transmission electron microscope (TEM) and scanning electron microscope(SEM).

• Journal of Radiopharmaceuticals and Molecular Probes
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• v.8 no.2
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• pp.77-85
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• 2022

The Td05 and Sgc8c, DNA-based aptamers, are well-known to target internalized surface markers (IGHM and PTK7) of Burkitt's lymphoma and acute lymphoblastic leukemia (ALL). Thus, Td05 and Sgc8c labeled with metallic radioisotope ⁶⁴Cu can be evaluated as potential diagnostic PET imaging agents. In this study, we modified the carbon chain length of the last adenosine of aptamer (n = 3, 6, 12) to increase tumor cell uptake and select the best candidate among six types of aptamer analogues and one adenosine of aptamer. After labeling of ⁶⁴Cu, [⁶⁴Cu]Cu-DOTA-aptamer analogues were evaluated in vitro studies (serum stability, Log P values, cell uptake, biodistribution). Then, we evaluate in vivo PET imaging study for two candidates (⁶⁴Cu-DOTA-C12-Sgc8c, ⁶⁴Cu-DOTA-C6-Td05). PET images clearly visualize tumors at 24 h post-injection rather than at an early time point and the tumor-to-background ratio also increases at the delay time point. ⁶⁴Cu-DOTA-C12-Sgc8c and ⁶⁴Cu-DOTA-C6-Td05 could be used as potential radiotracers for lymphoma.

• Applied Microscopy
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• v.16 no.2
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• pp.14-24
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• 1986

The interrelation of secondary defects, intermediate S' phase and aging condition in Al-2.0 wt% Cu-1.1 wt% Mg alloy is studied by transmission electron microscope. The results obtained in this study are as follows. 1. High density of dislocation loops, helices and stacking faults are observed in this specimen with aging treatment. 2. The number of dislocation loops and the width of loop free zone (LFZ) are increased with aging time. 3. The intermediate S' phase precipitates and grows on the dislocations and secondary defects. 4. The misfit dislocations are formed around intermediate S' phase. 5. It is thought that the helices appear to be produced by the climb of screw dislocations, while the dislocation loops appear to be formed both by condensation of vacancies into collapsed discs and by interaction of helices with screw of opposite sign.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.451-455
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• 2021

Porous copper bromide (CuBr) films are highly advantageous for detecting ammonia (NH₃). The fabrication of porous CuBr films requires complex high-temperature processes or multistep processes. Herein, we report the uncomplicated preparation of porous CuBr films by a spin-coating method and the films' excellent NH₃ sensing properties. The porous films were prepared by spin-coating 100, 150, and 200 mM CuBr solutions, and then dried in a vacuum oven for 2 h. All the films showed a high NH₃ response; in particular, the film prepared using a 100 mM CuBr solution showed an extremely high response (resistance ratio = 852) to 5 ppm NH₃. The film also showed fast response and recovery times, 272 s and 10 s respectively, even at room temperature. The outstanding NH₃ sensing characteristics were explained in relation to the porosity and thickness of the prepared films. The high-performance NH₃ sensors used in this study can be used for both indoor air quality and environmental monitoring applications.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.79-84
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• 2010

Formation of TSV (Through-Si-Via) with an Au seed layer and Cu filling to the via, simplification of bumping process for three dimensional stacking of Si dice were investigated. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process using $SF_6$ and $C_4F_8$ plasmas alternately. The vias were 40 ${\mu}m$ in diameter, 80 ${\mu}m$ in depth, and were produced by etching for 1.92 ks. On the via side wall, a dielectric layer of $SiO_2$ was formed by thermal oxidation, and an adhesion layer of Ti, and a seed layer of Au were applied by sputtering. Electroplating with pulsed DC was applied to fill the via holes with Cu. The plating condition was at a forward pulse current density of 1000 mA/$dm^2$ for 5 s and a reverse pulse current density of 190 mA/$dm^2$ for 25 s. By using these parameters, sound Cu filling was obtained in the vias with a total plating time of 57.6 ks. Sn bumping was performed on the Cu plugs without lithography process. The bumps were produced on the Si die successfully by the simplified process without serious defect.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.67-71
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• 2011

La doped CuO-ZnO-$Al_2O_3$ powders are prepared by sol-gel method with aluminum isopropoxide and primary distilled water as precursor and solvent. In this synthesized process, the obtained metal oxides caused the precursor such as copper (II) nitrate hydrate and zinc (II) nitrate hexahydrate were added. To improve the surface areas of La doped CuO-ZnO-$Al_2O_3$ powder, sorbitan (z)-mono-9-octadecenoate (Span 80) was added. The synthesized powder was calcined at various temperatures. The dopant was found to affect the surface area and particle size of the mixed oxide, in conjunction with the calcined temperature. The structural analysis and textual properties of the synthesized powder were measured with an X-ray Diffractometer (XRD), a Field-Emission Scanning Electron Microscope (FE-SEM), Bruner-Emmett-Teller surface analysis (BET), Thermogravimetry-Differential Thermal analysis (TG/DTA), $^{27}Al$ solid state Nuclear Magnetic Resonance (NMR) and transform infrared microspectroscopy (FT-IR). An increase of surface area with Span 80 was observed on La doped CuO-ZnO-$Al_2O_3$ powders from $25m^2$/g to $41m^2$/g.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.9
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• pp.20-25
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• 1998

Cu removal rates for various SiO$_2$ trench pitch sizes and densities and AFM images of surface profiles after global planarization using Cu CMP technology are investigated. In the experimental results, Cu removal rates are increasing as the pattern densities and pattern pitches are getting high and low, respectively, and then decreasing after local planarization. The rms roughness after global planarization are about 120$\AA$. AFM images with a 50% pattern density for 1${\mu}{\textrm}{m}$ and 2${\mu}{\textrm}{m}$ pitches show that thicknesses of 120~330$\AA$ Cu interconnects have been peeled off and oxide erosion of Cu/Sio$_2$ sidewall is observed. However, AFM images with a 50% pattern density for 10${\mu}{\textrm}{m}$ and 15${\mu}{\textrm}{m}$ pitches show that 260~340$\AA$ thick Cu interconnects have been trenched at the boundaries of Cu/Sio$_2$ sidewall.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.1
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• pp.29-33
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• 2002

The SrS:Cu, Ag thin film electroluminescient devices were fabricated on $AlTiO_3$/ITO/glass substrates by electron-beam evaporation. The emission spectrum of the device was about 460 nm with $\chi$=0.20, y=0.29 in the CIE color coordinator. It was found that the emission spectrum was saturated to pure blue color when Ag sensitizer was doped in SrS:CuCl phosphors. The luminance of the device was increased by increasing the sulfur pressure. The measured luminance was saturated with 430 cd/$m^2$at the applied voltage of 90 V and the maximum luminance was 580 cd/$m^2$at 110V. The polarization charge and conduction charge of the devices were found to be found to be about $3.5\mu$C/$\textrm{cm}^2$ and $7.4\mu$C/$\textrm{cm}^2$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.675-678
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• 2004

[ $CuAlO_2$ ] was used as P-type transparent conducting oxide. $CuAlO_2$ ceramics was obtained from heating a stoichiometric mixture of $Cu_2O$ and $Al_2OH_3$ at $1200^{\circ}C$ for 6h. $CuAlO_2$ ceramics were doped by the rate of 0, 5, 7 and 10% of the $BeSO_4{\cdot}4H_2O$. Sintered ceramics were investigated by X-ray diffraction (XRD) and electrical measurements. The room temperature conductivity of the ceramics, which were doped with $BeSO_4{\cdot}4H_2O$ 5wt% was of the order of $3.19\times10^{-3}S\;cm^{-1}$, and the density was $4.98g/cm^3$. Therefor the conductivity and density in $BeSO+4{\cdot}4H_2O$ 5wt% were better than other cases. Additionally, Seebeck cofficient measurements revealed that these ceramics were p-type semiconductors and the ceramic conductivity increased with the growth temperature.