• 한국세라믹학회지
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• 제31권4호
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• pp.427-435
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• 1994

Cu-metallized low firing temperature substrates were synthesized by cofiring green sheet of cordierite-based glass with Cu. By Sol-Gel method, Cu powder was coated with borosilicate gel which should act as a glass frit in Cu paste during cofiring. Theoretical weight ratios of Glass/Cu were controlled to be 2.5, 5, 10 and 15% by varying alkoxide concentrations. Average particle size of coated Cu was 0.629~0.674 ${\mu}{\textrm}{m}$ in comparison to that of as-received Cu(0.596 ${\mu}{\textrm}{m}$), which increased with alkoxide concentration but did not increase above certain concentration. The weight ratios of coated layer were 2.11~5.37%. The properties of Cu-metallized low firing temperature substrate, cofired at 90$0^{\circ}C$ for 1h under H2/N2 atmosphere, were as follows; sheet resistance was 13~43 m{{{{ OMEGA }}/$\square$, adhesion strength was 1.0~2.1 kgf/$\textrm{mm}^2$. From the observations of SEM photographs, the gel coated on Cu performed excellently as a glass frit.

• 한국생산제조학회지
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• 제20권5호
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• pp.570-575
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• 2011

Ultrasonic metal welder is consisted of power supply, transducer, booster, and horn. Precise designing is required since each parts' shape, length and mass can affect driving frequency and vibration mode. This paper analyzed Cu sheet deposition characteristics using ultrasonic metal welder and tension tester. A horn suitable for 40,000Hz was attached to the ultrasonic metal welder in order to weld Cu plates. The Cu sheet welding was done with different amplitude, pressure, and welding time, and its maximum tension was measured with tension tester. Maximum tension of 153.87N was obtained when the pressure was 2.0bar, amplitude was 80%, and welding time was 0.30s. Therefore, excessive welding condition negatively influences maximum tension measurement result.

• 한국표면공학회지
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• 제49권3호
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• pp.252-259
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• 2016

In order to form an aluminum-doped zinc oxide (AZO) transparent electrode film on a polyethylene terephthalate (PET) substrate used for a flexible display substrate, the AZO transparent electrode was produced at low temperature without substrate heating. Even though the produced electrode showed characteristic optical transmittance of 90 % (at 550 nm) and sheet resistance within $100{\Omega}/sq$, cracks occurred 10 minutes after loading applied 2 mm radius of curvature, and the sheet resistance increased linearly. An insertion layer of ZrCu was formed between the AZO film and the PET substrate to suppress the generation of cracks on the AZO film. It was verified that the crack was not generated 30 minutes after the loading of 2 mm radius of curvature, and no increase in sheet resistance was recorded. There was also not cracks in the dynamic bending test of 4 mm radius, but surface resistance was slightly increased. As a result, the ZrCu insertion film improved the interfacial adhesion between the substrate and AZO film layer without increasing sheet resistance and decreasing transmittance.

• 한국군사과학기술학회지
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• 제6권3호
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• pp.44-53
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• 2003

Cu/C films were prepared at room temperature under $Cu(hfac)_2-Ar-H_2$ atmosphere in order to obtain metallized polymer by using ECR-MOCVD(Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with a DC bias system. The room temperature MOCVD on polymer substrate could be possible by collaboration of ECR and a DC bias. Structural analysis of the films by ECR was found that fine copper grains embedded in an amorphous polymer matrix with indistinctive interfacial layer. The increase in $H_2$ contents brought on copper-rich film formation with low electric resistance. On the other hand carbon-rich films with low sheet electric resistance were prepared in argon atmosphere. The electric sheet resistance of Cu/C films with good interfacial property were controlled at $10^8$~$10^0$ Ohm/sq. ranges by the $H_2$/Ar mole ratio and the shielding effectiveness of the film showed maximum up to 45dB in the our experimental range.

• Current Photovoltaic Research
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• 제2권4호
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• pp.147-151
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• 2014

A boron doping process using a boron tri-bromide ($BBr_3$) as a boron source was applied to form a $p^+$ emitter layer on an n-type mono-crystalline CZ substrate. Nitrogen ($N_2$) gas as an additive of the diffusion process was varied in order to study the variations in sheet resistance and the uniformity of doped layer. The flow rate of $N_2$ gas flow was changed in the range 3 slm~10 slm. The sheet resistance uniformity however was found to be variable with the variation of the $N_2$ flow rate. The optimal flow rate for $N_2$ gas was found to be 4 slm, resulting in a sheet resistance value of $50{\Omega}/sq$ and having a uniformity of less than 10%. The process temperature was also varied in order to study its influence on the sheet resistance and minority carrier lifetimes. A higher lifetime value of $1727.72{\mu}s$ was achieved for the emitter having $51.74{\Omega}/sq$ sheet resistances. The thickness of the boron rich layer (BRL) was found to increase with the increase in the process temperature and a decrease in the sheet resistance was observed with the increase in the process temperature. Furthermore, a passivated emitter solar cell (PESC) type solar cell structure comprised of a boron doped emitter and phosphorus doped back surface field (BSF) having Ni/Cu contacts yielding 15.32% efficiency is fabricated.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1998년도 춘계학술발표회 초록집
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• pp.78-78
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• 1998

• Journal of Welding and Joining
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• 제35권2호
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• pp.23-29
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• 2017

Mechanical properties and hardness distributions in arc brazed joints of Dual phase steel using Cu-Al insert metal were investigated. The maximum tensile shear load was 10.4kN at the highest brazing current. It was about 54% compared to tensile load of base metal. This joint efficiency is higher than that of joint of DP steel using Cu-based filler metals which are Cu-Si, Cu-Sn. Fracture positions can be divided into two types. Crack initiation commonly occurred at three point junction among upper sheet, lower sheet and the fusion zone. However crack propagations were different with increasing the brazing current. In case of the lower current, it instantaneously propagated along with the interface between fusion zone and upper base material. On the other hand, in case of higher current, a crack propagation occurred through fusion zone. When the brazing current is low (60, 70A), the interface shape is flat type. However the interface shape is rough type, when the brazing current is high (80A). It is thought that the interface shapes were the reason why the crack propagations were different with brazing current. The interface was the intermetallic compounds which consisted of $(Fe,Al)_{0.85}Cu_{0.15}$ IMC formed by crystallization at $1200^{\circ}C$during cooling. Therefore the maximum tensile shear load and the fracture behavior were determined by a interface shape and effective sheet thickness of the fracture position.

• 센서학회지
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• 제22권1호
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• pp.89-94
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• 2013

In this paper, we developed a beam of MEMS probe card using a BeCu sheet. Silicon wafer thickness of $400{\mu}m$ was fabricated by using deep reactive ion etching (RIE) process. After forming through silicon via (TSV), the silicon wafer was bonded with BeCu sheet by soldering process. We made BeCu beam stress-free owing to removing internal stress by using joule heating. BeCu beam was fused by using joule heating caused by high current. The fabricated BeCu beam measured length of 1.75 mm and width of 0.44 mm, and thickness of $15{\mu}m$. We measured fusing current as a function of the cutting planes. Maximum current was 5.98 A at cutting plane of $150{\mu}m^2$. The proposed low-cost and simple fabrication process is applicable for producing MEMS probe beam.

• 한국전기전자재료학회논문지
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• 제23권11호
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• pp.911-914
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• 2010

In this paper, the $CuInSe_2$ thin film was prepared by using co-evaporation method in four different substrate temperatures $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$ and $400^{\circ}C$. When the substrate temperature was at $200^{\circ}C$ and $300^{\circ}C$, the single-phase $CuInSe_2$ was crystallized. As the temperature increased, it was shown that the thickness of the thin film was decreased with increment of the hall coefficient. When the sample was prepared at $200^{\circ}C$ of the subsrate temperature, the values of band gap energy (Eg), sheet resister and resistivity were measured 0.99 eV, $89.82\;{\Omega}/{\square}$ and $103{\times}10^{-4}\;{\Omega}{\cdot}cm$, respectively.

• 열처리공학회지
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• 제23권1호
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• pp.10-16
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• 2010

The microstructure of Cu-Mg-P alloy sheet consisted of Cu matrix and very fine MgP precipitate, and it has been observed that the microstructure remains virtually unchanged by Ag additions up to 2%. Ag solutes were dissolved into the matrix and hardly found in the precipitates. The hardness increased with increase of the Ag content, while the conductivity slightly decreased. Strain hardening through cold rolling was found to be effective in improving the hardness, especially in high-Ag alloys. Aging treatment was conducted either before the first cold rolling or between the first and the final cold rolling, and the conductivity was significantly higher at the former case, regardless of the Ag content. Softening of Cu-Mg-P alloy sheet was remarkable above $400^{\circ}C$ and the Ag content did not show any significant effect on it.