• Proceedings of the Korean Reliability Society Conference
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• 2005.06a
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• pp.385-392
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• 2005

The restriction of the use of hazardous substances in electrical and electronic equipment legislation mandates the substitution of lead and other hazardous substances in electronics products by July 2006. Due to this legislative pressure, the electronics industry is moving to adoption of lead free solders. In this paper, we investigated a flux to restrict generating electrochemical migration in lead-free solder. The lead-free solders used in this study were Sn-0.7Cu-0.01P and Sn-3.0Ag-0.5Cu. To measure the resistance of electrochemical migration, the dew-cycle test and water drop test were adopted. As the result, now flux having high durable of electrochemical migration was developed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.57-57
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• 2009

Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. We investigated the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of PMC. We were able to do more economical approach by using copper which play an electrolyte ions role. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

• Proceedings of the KWS Conference
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• 2006.10a
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• pp.169-171
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• 2006

Solderability and reaction properties were investigated for four Pb-free alloys as a function of Ag contents; Sn-4.0Ag-0.5Cu, Sn-3.0Ag-0.5Cu, Sn-2.5Ag-0.5Cu, and Sn-1.0Ag-0.5Cu. The alloy of the lowest Ag content, i.e., Sn-1.0Ag-0.5Cu, showed poor wetting properties as the reaction temperature decreased to 230oC. Variation of Ag concentration in the Sn-xAg-0.5Cu alloy shifted exothermic peaks indicating the undercooling temperature in DSC curve. For the aging process at 170oC, the thickness of IMCs at the board-side solder/Cu interface increased with the Ag concentration.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.12
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• pp.1856-1863
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• 2004

In the last 50 years, lead-contained solder materials have been the most popular interconnect materials used in the electronics industry. Recently, lead-free solders are about to replace lead-contained solders for preventing environmental pollutions. However, the reliability of lead-free solders is not yet satisfactory. Several researchers reported that lead-contained solders have a good fatigue property. The others published that the lead-free solders have a longer thermal fatigue life. In this paper, the reason for the contradictory results published on the estimation of fatigue life of lead-free solder is investigated. In the present study, fatigue behavior of 63Sn37Pb, and two types of lead-free solder joints were compared using pseudo-power cycling testing method, which provides more realistic load cycling than chamber cycling method does. Pseudo-power cycling test was performed in various temperature ranges to evaluating the shear strain effect. A nonlinear finite element model was used to simulate the thermally induced visco-plastic deformation of solder ball joint in BGA packages. It was found that lead-free solder joints have a good fatigue property in the small temperature range condition. That condition induce small strain amplitude. However in the large temperature range condition, lead-contained solder joints have a longer fatigue life.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.09a
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• pp.1-26
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• 2004

The implementation of Pb-free solder technology is making good progress in electronic industry. Further understanding on fundamental issues on Pb-free solders/processes is required to reduce reliability risk factors of Pb-free solder joints. Several reliability issues including thermal fatigue, impact reliability, IMC growth, spalling, void formation are reviewed for Pb-free solder joints. Several applications of Pb-free technology are discussed, such as Pb-free, CBGA, CuCGA, flip chips, and wafer bumping by IMS.

• Corrosion Science and Technology
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• v.6 no.2
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• pp.50-55
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• 2007

The smaller size and higher integration of advanced electronic package systems result in severe electrochemical reliability issues in microelectronic packaging due to higher electric field under high temperature and humidity conditions. Under these harsh conditions, electronic components respond to applied voltages by electrochemical ionization of metal and the formation of a filament, which leads to short-circuit failure of an electronic component, which is termed electrochemical migration. This work aims to evaluate electrochemical migration susceptibility of the pure Sn, Sn-3.5Ag, Sn-3.0Ag-0.5Cu solder alloys in $Na_{2}SO_{4}$. The water drop test was performed to understand the failure mechanism in a pad patterned solder alloy. The polarization test and anodic dissolution test were performed, and ionic species and concentration were analyzed. Ag and Cu additions increased the time to failure of Pb-free solder in 0.001 wt% $Na_{2}SO_{4}$ solution at room temperature and the dendrite was mainly composed of Sn regardless of the solders. In the case of SnAg solders, when Ag and Cu added to the solders, Ag and Cu improved the passivation behavior and pitting corrosion resistance and formed inert intermetallic compounds and thus the dissolution of Ag and Cu was suppressed; only Sn was dissolved. If ionic species is mainly Sn ion, dissolution content than cathodic deposition efficiency will affect the composition of the dendrite. Therefore, Ag and Cu additions improve the electrochemical migration resistance of SnAg and SnAgCu solders.

• Proceedings of the KWS Conference
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• 2007.11a
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• pp.235-237
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• 2007

In this paper, fabrication of Sn-3.0Ag-0.5Cu solder bumping having accurate composition and behavior of intermetallic compounds(IMCs) growth at interface between Sn-Ag-Cu bumps and Cu substrate were studied. The ternary alloy of the Sn-3.0Ag-0.5Cu solder was made by two binary(Sn-Cu, Sn-Ag) electroplating on Cu pad. For the manufacturing of the micro-bumps, photo-lithography and reflow process were carried out. After reflow process, the micro-bumps were aged at $150^{\circ}C$ during 1 hr to 500 hrs to observe behavior of IMCs growth at interface. As a different of Cu contents(0.5 or 2wt%) at Sn-Cu layer, behavior of IMCs was estimated. The interface were observed by FE-SEM and TEM for estimating of their each IMCs volume ratio and crystallographic-structure, respectively. From the results, it was found that the thickness of $Cu_3Sn$ layer formed at Sn-2.0Cu was thinner than the thickness of that layer be formed Sn-0.5Cu. After aging treatment $Cu_3Sn$ was formed at Sn-0.5Cu layer far thinner.

• Journal of Surface Science and Engineering
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• v.39 no.6
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• pp.255-262
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• 2006

Pd-Cu alloy membrane for hydrogen separation was fabricated by sputtering and Cu reflow process. At first, the Pd and Cu was continuously deposited by sputtering method on oxidized Si support, the Cu reflow process was followed. Microstructure of the surface and permeability of the membrane was investigated depending on various reflow temperature, time, Pd/cu composition and supports. With respect to our result, Pd-Cu thin film (90 wt.% Pd/10 wt.% Cu) deposited by sputtering process with thickness of $2{\mu}m$ was heat-treated for Cu reflow The voids of the membrane surface were completely filled and the dense crystal surface was formed by Cu reflow behavior at $700^{\circ}C$ for 1 hour. Cu reflow process, which is adopted for our work, could be applied to fabrication of dense Pd-alloy membrane for hydrogen separation regardless of supports. Ceramic or metal support could be easily used for the membrane fabricated by reflow process. The Cu reflow process must result in void-free surface and dense crystalline of Pd-alloy membrane, which is responsible for improved selectivity oi the membrane.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.160-161
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• 2009

In this study, in order to develop the lead free piezoelectric ceramics with excellent piezoelectric properties, (Na,K)$NbO_3$ ceramics according to the amount CuO addition were fabricated using a conventional mixed oxide process and their piezoelectric and dielectric characteristics were investigated. At the 0.8mol% CuO added composition, density, electromechanical coupling factor(kp), echanical quality factor(Qm), dielectric constant$(\varepsilon_r$) and piezoelectric constant($d_{33}$) showed the optimum value of $4.459g/cm^3$, 0.469, 540, 410, 69.57pC/N, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.379-382
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• 2010

In this study, in order to develop the lead-free piezoelectric ceramics with high piezoelectric and dielectric properties, $(K_{0.5}Na_{0.5})(Nb_{0.97}Sb_{0.03})O_3$ ceramics were fabricated using a conventional mixed oxide process and their piezoelectric and dielectric characteristics were investigated according to the $K_{5.4}Cu_{1.3}Ta_{10}O_{29}$ addition. $K_{5.4}Cu_{1.3}Ta_{10}O_{29}$ addition enhanced density, electromechanical coupling factor($k_p$) piezoelectric constant $d_{33}$ and mechanical quality factor($Q_m$). At the 0.9 mol% $K_{5.4}Cu_{1.3}Ta_{10}O_{29}$ addition, density, electromechanical coupling factor($k_p$), dielectric constant(${\varepsilon}_r$) and piezoelectric constant($d_{33}$) of specimen showed the optimum values of 0.46, 471, and 148 pC/N, respectively.