• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.239-242
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• 2000

To fabricate YBa$_2$Cu$_3$O$_{x}$ thick film using diffusion process, $Y_2$BaCuO$_{5}$ and BaO+CuO as the material of substrate and the doping material were selected. CeO$_2$ in the doping material was mixed. As another doping material, YBa$_2$Cu$_3$O$_{x}$ was prepared for the comparison with BaO+CuO doping material. Each doping material was patterned on $Y_2$BaCuO$_{5}$ substrate by the screen printing method and then was annealed above peritectic reaction temperature of YBCO with a few step. It could be observed by X-ray diffraction patterns and SEM photographs that through the diffusion process of the $Y_2$BaCuO$_{5}$ and BaO+CuO, the YBa$_2$Cu$_3$O$_{x}$ phase was formed. With an amout of addition of CeO$_2$, the thickness of a formed YBa$_2$Cu$_3$O$_{x}$ decreased. x/ decreased.

• Journal of Powder Materials
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• 제29권5호
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• pp.370-375
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• 2022

Cu-doped ZnSe quantum dots were successfully synthesized in an aqueous solution using an internal doping method. The effects of ligand type, CuSe synthesis temperature, and heating time on Cu-doped ZnSe synthesis were systematically investigated. Of MPA, GSH, TGA, and NAC used as ligands, MPA was the optimal ligand as determined by PL spectrum analysis. In addition, the emission wavelength was found to depend on the synthesis temperature of the internal doping core of CuSe. As the temperature increased, the doping of Cu²⁺ was enhanced, and the emission wavelength band was redshifted; accordingly, the emission peaks moved from blue to green (up to 550 nm). Thus, the synthesis of Cu:ZnSe using internal doping in aqueous solutions is a potential method for ecomanufacturing of color-tuned ZnSe quantum dots for display applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.217-220
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• 1999

We investigated the effects of doping elements on the Bi-Sr-Ca-Cu-0 ceramics. The doping elements can be classified into groups depending on their supeconducting characteristics in the Bi -Sr-Ca-Cu -O structure. The first group of doping elements(Co, Fe, Ni and Zn) substitute into the copper site and can reduce the critical temperatures of the 2223 and 2212 phases. The second group of doping elements(Y and La) substitute into the Ca site and cause the disappearance of the 2223 phase and increase the critical temperatures in the 2212 phase.

• Electrical & Electronic Materials
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• 제9권1호
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• pp.1-8
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• 1996

We investigated the effects of doping elements on the Bi-Sr-Ca-Cu-O ceramics. The doping elements can be classified into four groups depending on their supeconducting characteristics in the Bi-Sr-Ca-Cu-O structure. The first group of doping elements(Co, Fe, Ni and Zn) substitute into the copper site and can reduce the critical temperatures of the 2223 and 2212 phases. The second group of doping elements(Y and La) substitute into the Ca site and cause the disappearance of the 2223 phase and increase the critical temperatures in the 2212 phase. The third group of doping elements(P and K) have a tendency to decompose the superconducting phase and reduce the optimal sintering temperature. The fourth group of doping elements(B, Si, Sn and Ba) almost unaffected the superconductivity of the 2223 and 2212 phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.198-203
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• 2000

This paper investigated the effects of doping elements on the Bi-Sr-Ca-Cu-O ceramics. The doping elements can be classified into four groups depending on their superconducting characteristics in the Bi-Sr-Ca-Cu-O structure. The first group of doping elements(Co, Fe, Ni and Zn) substitute into the copper site and can reduce the critical temperatures of the 2223 and 2212 phases. The second group of doping elements(Y and La) substitute into the Ca site and cause the disappearance of the 2223 phase and increase the critical temperatures in the 2212 phase. The third group of doping elements(P and K) have a tendency to decompose the superconducting phase and reduce the optimal sintering temperature. The fourth group of doping elements(B, Si, Sn and Ba) almost unaffected the superconductivity of the 2223 and 2212 phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제14권2호
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• pp.152-157
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• 2001

For the fabrication of YBa$_2$Cu$_3$O$_{x}$ thick film using diffusion process between $Y_3$BaCuO$_{5}$ and BaO+CuO, each material was selected as substrate and doping material. In this paper, we investigated the characteristic of YBa$_2$Cu$_3$O$_{x}$ thick film due to both addition of CeO$_2$into substrate and initial particle size of doping material. Through X-ray diffraction patterns and SEM photographs, the variation of composition and thickness of the formed phase was observed. It was from the experiment obtained that the addition of CeO$_2$into $Y_2$BaCuO$_{5}$ substrate and the initial particle size of doping material play important part in promoting the reaction between substrate and doping material.aterial.

• Journal of Powder Materials
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• 제22권4호
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• pp.254-259
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• 2015

$Bi_2Te_3$ related compounds show the best thermoelectric properties at room temperature. However, n-type $Bi_2Te_{2.7}Se_{0.3}$ showed no improvement on ZT values. To improve the thermolectric propterties of n-type $Bi_2Te_{2.7}Se_{0.3}$, this research has Cu-doped n-type powder. This study focused on effects of Cu-doping method on the thermoelectric properties of n-type materials, and evaluated the comparison between the Cu chemical and mechanical doping. The synthesized powder was manufactured by the spark plasma sintering(SPS). The thermoelectric properties of the sintered body were evaluated by measuring their Seebeck coefficient, electrical resistivity, thermal conductivity, and hall coefficient. An introduction of a small amount of Cu reduced the thermal conductivity and improved the electrical properties with Seebeck coefficient. The authors provided the optimal concentration of $Cu_{0.1}Bi_{1.99}Se_{0.3}Te_{2.7}$. A figure of merit (ZT) value of 1.22 was obtained for $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu chemical doping, which was obviously higher than those of $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu mechanical doping (ZT=0.56) and Cu-free $Bi_2Se_{0.3}Te_{2.7}$ (ZT=0.51).

• Progress in Superconductivity and Cryogenics
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• 제20권2호
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• pp.24-28
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• 2018

To understand the effects of Cd substitution for Cu, $(Pb_{0.5}Cu_{0.5-x}Cd_x)Sr_2(Ca_{0.7}Y_{0.3})Cu_2O_z$ (x = 0 ~ 0.5) compounds were synthesized and the structural and superconducting properties of the compounds were characterized. Resistivity data revealed that superconducting transition temperature rises initially up to x = 0.25 and then decreases as the Cd doping content increases. Room-temperature thermoelectric power decreases at first up to x = 0.25 and then increases with higher Cd doping content, indicating that the change in $T_c$ is mainly caused by the change in the hole concentration on the superconducting planes by the Cd doping. The non-monotonic dependence of the lattice parameters and the transition temperature with Cd doping content is discussed in connection with the possible formation of $Pb^{+2}$ ions and the removal of excess oxygen caused by Cd substitution in the charge reservoir layer. A correlation between transition temperature and c/a lattice parameter ratio was observed for the $(Pb_{0.5}Cu_{0.5-x}Cd_x)Sr_2(Ca_{0.7}Y_{0.3})Cu_2O_z$ system.

• Korean Journal of Materials Research
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• 제30권2호
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• pp.68-73
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• 2020

Due to its favorable optical properties, Cu₂SnS₃ (CTS) is a promising material for thin film solar cells. Doping, which modifies the absorber properties, is one way to improve the conversion efficiency of CTS solar cells. In this work, CTS solar cells with selenium doping were fabricated on a flexible substrate using sputtering method and the effect of doping on the properties of CTS solar cells was investigated. In XRD analysis, a shift in the CTS peaks can be observed due to the doped selenium. XRF analysis confirmed the different ratios of Cu/Sn and (S+Se)/(Cu+Sn) depending on the amount of selenium doping. Selenium doping can help to lower the chemical potential of sulfur. This effectively reduces the point defects of CTS thin films. Overall improved electrical properties were observed in the CTS solar cell with a small amount of selenium doping, and a notable conversion efficiency of 1.02 % was achieved in the CTS solar cell doped with 1 at% of selenium.

• Korean Journal of Materials Research
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• 제29권12호
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• pp.764-773
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• 2019

The gas response characteristic toward C₂H₅OH has been demonstrated in terms of copper-vacancy concentration, hole density, and microstructural factors for undoped/Li(I)-doped CuO thin films prepared by sol-gel method. For the films, both concentrations of intrinsic copper vacancies and electronic holes decrease with increasing calcination temperature from 400 to 500 to 600 ℃. Li(I) doping into CuO leads to the reduction of copper-vacancy concentration and the enhancement of hole density. The increase of calcination temperature or Li(I) doping concentration in the film increases both optical band gap energy and Cu2p binding energy, which are characterized by UV-vis-NIR and X-ray photoelectron spectroscopy, respectively. The overall hole density of the film is determined by the offset effect of intrinsic and extrinsic hole densities, which depend on the calcination temperature and the Li(I) doping amount, respectively. The apparent resistance of the film is determined by the concentration of the structural defects such as copper vacancies, Li(I) dopants, and grain boundaries, as well as by the hole density. As a result, it is found that the gas response value of the film sensor is directly proportional to the apparent sensor resistance.