• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.237-237
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• 2010

에너지소비와 엔진 부품의 마모문제를 해결하기 위해, soft-phase를 doping한 hard상의 coating에 대한 실험이 최근 중요한 연구 테마로서 진행 중이다. 특히 MoN-Cu coating은 미국 Argon 연구소의 Erdemer박사 등에 의해, 고온 및 상온 윤활성이 우수한 코팅층으로 보고된 이후 많은 연구가 진행되고 있다. 그러나 기존 연구는 Mo와 Cu의 원소타겟을 이용한 연구가 주력이 되었다. 높은 경도와 저온 고온에서의 낮은 나노 혼합물 코팅 종류는 일반적으로 Mo와 Cu와 같은 원소 합금을 이용한 다수 타겟을 이용한 공정에 의해 진행되어왔다. 이러한 복수의 타겟에 의해 증착 동안에는, 정확한 조성, 큰 크기의 시편들의 균일 증착을 조절하기가 쉽지 않다. 또한, 코팅층에 3번째 성분을 추가하기가 어렵다는 문제점이 있다. 본 연구에서는, 최상의 마찰계수와 표면경도를 보이는 MoN-Cu층을 형성시키기 위하여 합금으로 단일 타겟을 제조하였다. 이를 위한 최적 조성을 결정하기 위하여 Mo, Cu 단일 타겟을 이용한 Unbalanced Magnetron sputtering 법으로 다양한 Cu 함량의 MoN+Cu 합금을 제조하였으며, 이에 대한 경도 및 마찰계수 측정을 통해 최적의 Cu 함량을 결정하였다. 이러한 최적 조성의 Cu 타겟제조를 기계적 합금화와 Spark plasma sintering 기술을 이용하여 제작하였으며, 복수의 합금 타겟과 단일 합금 타겟으로 제조된 코팅층의 물성 비교를 통해 합금 타겟의 우수성 여부를 확인하고자 하였다. 증착된 두 조건의 물성을 비교 단일 타겟은 두가지 타겟으로 증착한 것보다 비슷한 조성에서 경도가 높았으며 경도가 비슷한 조성에서는 마찰계수가 낮았다. 또 입자는 10 at.% Cu 조성에 대해 단일타겟이 50nm 결정립을 갖는 반해 단일타겟은 측정이 불가능할 정도의 미세한 결정립을 가졌다. Erdemir의 연구 결과에 의하면, Cu 함량이 증가함에 따라 columnar 형태의 코팅층구조가 나노 구조로 변한다고 하였는데, 본 연구에서 복수의 원소 타겟에서는 확인이 안되었으며, 단일 합금 타겟에서 완벽한 featurless 형태의 코팅층 구조와 우수한 조도의 박막층을 얻을 수 있었다. 이렇게 제조된 다양한 코팅층에 대한 마찰계수 측정이 진행중이다.

• Progress in Superconductivity
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• v.13 no.3
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• pp.163-168
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• 2012

The effects of Ta substitution on the superconducting and magnetic properties of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z(0{\leq}x{\leq}0.5)$ system have been investigated. The X-ray diffraction measurements indicate that the Ta ion replaces Ru sites up to x = 0.4. It is found that the Ta substitution for Ru significantly reduces the weak-ferromagnetic component of the field-cooled magnetic susceptibility without an appreciable change of room temperature thermopower at lower Ta doping level below x = 0.2. The resistive transition temperature tends to decrease monotonically from 27 K for the x = 0 sample to 16 K (9 K) for the x = 0.4 (x = 0.5) sample. These results suggest that superconductivity of the $(Ru_{1-x}Ta_x)Sr_2(Gd_{1.4}Ce_{0.6})Cu_2O_z$ compound is not significantly affected by the magnetic state of the Ru sublattice. The experimental results are discussed in connection with previous reports on the effects of Nb substitution.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.103-103
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• 2011

The epitaxial Cu-doped ZnO and pure ZnO thin films were grown on Al2O3 (0001) substrates by RF sputtering method. The structures and crystallographic orientations were investigated using X-ray diffraction (XRD) and X-ray absorption spectroscopy. From the XRD pattern, it is observed that peak positions shift towards higher $2{\theta}$ value with Cu doping. The ${\omega}$-scan measurements at the (0002) diffraction peak for these samples reveal that the full-widths at half-maxima (FWHMs) are about $0.017-0.019^{\circ}$, which indicate a good c-axis orientation of the Zn1-xCuxO films. From phi-scan, all of the Zn1-xCuxO films were epitaxially grown. EXAFS measurements also demonstrated that Cu incorporated into a Zn-atom position substitutionally. All the results confirmed that copper ion were well incorporated into the ZnO lattices by substituting Zn sites without changing the wurtzite structure and no secondary phase existed in Cu-doped ZnO thin films.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.257-259
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• 1987

The photoelectronic properties of CdTe films sintered with various amounts of $CdCl_2$ and $CuCl_2$ have been investigated by measurements of dark electrical resistivity, photocurrent, thermoelectric power, optical transmission and by observation of microstructure. The grain size and optical transmission of sintered CdTe films increase with increasing amount of $CdCl_2$ indicating that $CdCl_2$ acts as a sintering aid. The photoconductivity gain(A-$cm^2/W$) increases and resistivity($\Omega$-cm) decreases with increasing amount of $CuCl_2$ up to 100ppm due to the occurance of Cu-doping during sintering. The dark resistivity could be reduced farther by post heat treatments. The dark resistivity was still high($10^3{\Omega}$-cm) so that the accurate determination of the hole concentration by Hall measurement or by thermoelectric power measurement was not possible. From the analysis of electrical activation energy, however it can be concluded that the hole concentration is less than $10^{14}/cm^3$ and all grains are depleted of carrier by the trapping centers at grain boundaries.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.404-409
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• 1996

The structural and electric properties of $Y_{1-x}$YbF$_{x}$Ba$_{2}$Cu$_{3}$O$_{7-y}$(x=0.0, 0.1, 0.2, 0.3, 0.4, 0.5 and 0.6) have been investigated by using XRD(X-ray diffraction), TMA(thennomechanical analysis), NMR(nuclear magnetic resonance) analysis and four probe method. $Y_{1-x}$YbF$_{x}$Ba$_{2}$Cu$_{3}$O$_{7-y}$ samples were prepared by conventional solid-state reaction method using $Y_{2}$O$_{3}$, BaCO$_{3}$, CuO and YbF$_{3}$ power. TMA and high temperature XRD results shows that orthorhombic to tetragonal phase transition occurs in the unfluorinated 1-2-3 sample while the phase change is not observed in the fluorinated 1-2-3 samples. Superconducting transition temperature(T$_{c}$) increases with increasing YbF$_{3}$ content ; T$_{c}$, of the sample reaching maximum of 102K for x=0.3, and then decreases with further increasing YbF$_{3}$ content. The structural analysis and T$_{c}$ results shows that the fluorine doping stabilize the orthorhombic phase, together with the increase in T$_{c}$.}$ c/.TEX> c/.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.256-259
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• 1999

The effects of Pr doping on structural and superconducting properties of (Pb$_{0.5}$V$_{0.5}$)Sr$_2$(Ca$_{1-x}$Pr$_x$)Cu$_2$O$_z$ have been studied. We have observed systematic variation of lattice parameters with increasing Pr content. A maximum Tc of about40 K has been observed in this system. The correlation between the crystal structure and superconductivity has been addressed.

• Progress in Superconductivity and Cryogenics
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• v.20 no.3
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• pp.1-4
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• 2018

The effect of sulfate substitution on the formation of (Pb,S)-1201 type phase was investigated. Polycrystalline samples with nominal compositions of $(Pb_{0.5}B_{0.5-x}S_x)(Sr_{2-y}La_y)CuO_z$, (x = 0 - 0.5, y = 0.7 - 1.0) and $(Pb_{0.5}S_{0.5})(Sr_{2-y}La_y)CuO_z$ (y = 0.5 - 1.0) were prepared by using a solid-state reaction method. The samples were characterized by powder X-ray diffraction (XRD) and resistivity measurements. XRD data revealed that almost-single (Pb,S)-1201 phase samples could be obtained for x = 0.5 and y = 0.9-1.0, judging from the similar results of the XRD patterns between the (Pb,S)-1201 and (Pb,B)-1201 phases. Each of the samples has a crystal structure with tetragonal symmetry. The sample with x = 0.5 and y = 0.9 is found to show an onset of resistivity dropping at over 23 K and zero resistivity at 12 K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.370-375
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• 2016

In this paper, we investigated the electrical properties of crystalline silicon solar cell fabricated with Ni/Cu/Ag plating. The laser process was used to ablate silicon nitride layer as well as to form the selective emitter. Phosphoric acid layer was spin-coated to prevent damage caused by laser and formed selective emitter during laser process. As a result, the contact resistance was decreased by lower sheet resistance in electrode region. Low sheet resistance was obtained by increasing laser current, but efficiency and open circuit voltage were decreased by damage on the wafer surface. KOH treatment was used to remove the laser damage on the silicon surface prior to metalization of the front electrode by Ni/Cu/Ag plating. Ni and Cu were plated for each 4 minutes and 16 minutes and very thin layer of Ag with $1{\mu}m$ thickness was plated onto Ni/Cu electrode for 30 seconds to prevent oxidation of the electrode. The silicon solar cells with KOH treatment showed the 0.2% improved efficiency compared to those without treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.632-635
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• 2011

Additions (ZnO, CuO) doped $0.98(Na_{0.5}K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ta_{0.83})O_3$ (0.98NKN-0.02LST-x) lead free piezoelectric ceramics have been fabricated by ordinary sintering technique. The effects of additions doping on the dielectric, piezoelectric, and ferroelectric properties of the ceramics were mainly investigated. X-ray diffraction of the sample appeared orthorhombic phase. The specimen doped with additions exhibits enhanced electrical properties ($d_{33}$= 153 pC/N). These results indicate that the 0.98NKN-0.02LST-x ceramics is a promising candidate for lead-free piezoelectric ceramics for applications such as piezoelectric actuators, harmonic oscillator and so on.

• Journal of Sensor Science and Technology
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• v.15 no.5
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• pp.323-327
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• 2006

Manganese, copper and chlorine-doped ZnS phosphors (ZnS:Mn,Cu,Cl) were synthesized through solid-state reaction. Manganese was added in the range of amount $1.4{\sim}5.3$ mol % to ZnS phosphors containing 0.2 or 1.0 mol % of copper and a small amount of chlorine. As-synthesized phosphors showed a spherical morphology with a mean size of ${\sim}20\;{\mu}m$ and structural properties of Wurtzite, which were identified by SEM and XRD, respectively. Optical properties of ZnS:Mn,Cu,Cl synthesized with various concentrations of activators were analysed by both of PL and EL spectra. Samples mainly showing only 580 nm-orange emission by 380 nm-UV excitation gave different EL spectra of blue, green, and orange emissions at 450, 480 and 580 nm, respectively, depending on concentrations of $Cu^{2+}$ and $Mn^{2+}$.