• Animal Bioscience
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• v.35 no.3
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• pp.484-493
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• 2022

Objective: This study was conducted to evaluate the effects of the supplementation of diets of broiler chickens with hot-melt extruded CuSO₄ (HME-Cu) on their growth performance, nutrient digestibility, gut microbiota, small intestinal morphology, meat quality, and copper (Cu) bioavailability. Methods: A total of 225 broilers (Ross 308), one-day old and initial weight 39.14 g, were weighed and distributed between 15 cages (15 birds per cage) in a completely randomized experimental design with 3 treatments (diets) and 5 replicates per treatment. Cages were allotted to three treatments including control (without supplemental Cu), IN-Cu (16 mg/kg of CuSO₄), and HME-Cu (16 mg/kg of HME processed CuSO₄). Results: The HME-Cu treatment tended to increase the overall body weight gain (p<0.10). The apparent digestibility of Cu was increased by supplementation of HME-Cu at phase 2 (p<0.05). The Escherichia coli count in cecum tended to decrease with the supplementation with Cu (p<0.10). In addition, the HME-Cu treatment had a higher pH of breast meat than the control and IN-Cu treatments (p<0.05). Significant increases in the cooking loss, water-holding capacity, and lightness in the breast were observed in the HME-Cu treatment compared to the control (p<0.05). The Cu content of excreta increased with the Cu supplementation (p<0.05). The concentration of excreta Cu in broilers was decreased in the HME-Cu compared to the IN-Cu in phase 2 (p<0.05). The Cu concentration in the liver was increased with the HME-Cu supplementation, compared with the control diets (p<0.05). Conclusion: This study showed that HME-Cu supplementation at the requirement level (16 mg/kg diets) in broiler diets did not affect the growth performance and the physiological function of Cu in broilers. However, supplementation of Cu in HME form improved the meat quality and the bioavailability of Cu.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.91-97
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• 2014

With Pb-free solder joints containing Sn-Ag-Cu-based ternary alloys (Sn-1.0 wt.%Ag-0.5Cu and Sn-4.0Ag-0.5Cu) and Sn-Ag-Cu-In-based quaternary alloys (Sn-1.0Ag-0.5Cu-1.0In, Sn-1.2Ag-0.5Cu-0.4In, Sn-1.2Ag-0.5Cu-0.6In, and Sn-1.2Ag-0.7Cu-0.4In), fracture-mode change, shear strengths, and fracture energies were observed and measured under a high-speed shear test of 500 mm/s. The samples in each composition were prepared with as-reflowed ones or solid-aged ones at $125^{\circ}C$ to 500 h. As a result, it was observed that ductile or quasi-ductile fracture modes occurs in the most of Sn-Ag-Cu-In samples. The happening frequency of a quasi-ductile fracture mode showed that the Sn-Ag-Cu-In joints possessed ductile fracture properties more than that of Sn-3.0Ag-0.5Cu in the high-speed shear condition. Moreover, the Sn-Ag-Cu-In joints presented averagely fracture energies similar to those of Sn-Ag-Cu joints. While maximum values in the fracture energies were measured after the solid aging for 100 h, clear decreases in the fracture energies were observed after the solid aging for 500 h. This result indicated that reliability degradation of the Sn-Ag-Cu-In solder joints might accelerate from about that time.

• Journal of the Korean Society for Nondestructive Testing
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• v.31 no.1
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• pp.32-39
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• 2011

The object of this study is to evaluate and discriminate nondestructively the dislocation substructures of Cu and Cu-Zn alloy subjected to the low-cycle-fatigue. The ultrasonic wave velocity, electrical resistivity and positron annhilation lifetime(PAL) were measured to the nondestructive testing. Cyclic fatigue test of Cu and Cu-Zn alloy with much different stacking fault energies was conducted and the correlations between dislocation behavior and nondestructive parameters were studied. Dislocation cell substructure was developed in Cu, while planar array of dislocation structure was developed in Cu-35Zn alloy only increasing dislocation density with fatigue cycles. Decrease in ultrasonic wave velocity, increase in electrical resistivity and PAL were shown because of the development of lattice defects, dislocations and vacancies, by cyclic fatigue at room temperature. In contrast to Cu-Zn alloy of the planar-array dislocation substructure showing continuous changes in the nondestructive parameters, it does not make any noticeable changes in the nondestructive parameters after the evolution of dislocation cell substructure in Cu.

• Journal of Nutrition and Health
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• v.41 no.8
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• pp.691-700
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• 2008

One suggested mechanism underlying copper (Cu) deficiency teratogenicity is a low availability of nitric oxide (NO), signaling molecule which is essential in developmental processes. Increased superoxide anions secondary to decreased activities of Cu-zinc superoxide dismutase (Cu-Zn SOD) in Cu deficiency can interact with NO to form peroxynitrite, which can nitrate proteins at tyrosine residues. In addition, peroxynitrite formation can limit NO bioavailability. We previously reported low NO availability and increased protein nitration in Cu deficient (Cu-) embryos. In the current study, we tested whether Cu deficiency alters downstream signaling of NO by assessing cyclic GMP (cGMP) and phosphorylated vasodilator-stimulating phosphoprotein (VASP) levels, and whether NO supplementation can affect these targets as well as protein nitration. Gestation day 8.5 embryos from Cu adequate (Cu+) or Cu- dams were collected and cultured in either Cu+ or Cu- media for 48 hr. A subset of embryos was cultured in Cu- media supplemented with a NO donor (DETA/NONOate; 20 ${\mu}M$) and/or Cu-Zn SOD. Cu-/Cu- embryos showed a higher incidence of embryonic and yolk sac abnormalities, low NO availability, blunted dose-response in NO concentrations to increasing doses of acetylcholine, low mRNA expression of endothelial nitric oxide synthase (eNOS), increased levels of 3-nitrotyrosine (3-NT) compared to Cu+/Cu+ controls. cGMP concentrations tended to be low in Cu-/Cu- embryos, and they were significantly lower in Cu-/Cu- yolk sacs than in controls. Levels of phosphorylated VASP at serine 239 (P-VASP) were similar in all groups. NO donor supplementation to the Cu- media ameliorated embryonic and yolk sac abnormalities, and resulted in increased levels of cGMP without altering levels of P-VASP and 3-NT. Taken together, these data support the concept that Cu deficiency limits NO availability and alters NO/cGMP-dependent signaling in Cu- embryos and yolk sacs, which contributes to Cu deficiency-induced abnormal development.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.314-320
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• 1997

A chemical reaction and electronic structure change at the interface between copper and titanium nitride were investigated by XPS. A thin Cu layer was deposited on a TiN substrate oxidized by exposure to air at room temperature. We observed the Ti(2p), O(1s), N(1s), Cu(2p) core-level, and Cu LMM Auger line spectra. With increasing of the thickness of Cu layer, these spectra do not show any changes in the line shape as well as in peak position. In addition, the valence band spectra in XPS do not show any changes, which indicates that Cu does not react with Ti, N, and O. This inreactivity of Cu might cause a poor adhesion between Cu and TiN.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.135-140
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• 1998

We investigated the initial growth mode of Cu deposited on polyimide at high temperature($350^{\circ}C$) using x-ray photoelectron spectroscopy. We could find that when Cu is sputter-deposited on the polyimide at high temperature, Cu-C-N complex is formed first, Cu-N-O complex and Cu-oxide are mainly formed successively, and then funally metallic Cu grows. In the chemical reaction point of view, the interface of Cu/polyimide at high temperature is than that at room temperature.

• Journal of Ecology and Environment
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• v.30 no.3
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• pp.271-276
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• 2007

A simple and efficient protocol was developed for culturing Cu-tolerant and Cu-accumulating plants via pre-adaptation to Cu during plant tissue culture. We induced multiple shoots from begonia (Begonia evansiana Andr.) leaf explants on MS medium supplemented with naphtaieneacetic acid and benzyladenine. After 3 months, small plantlets were transferred to MS medium supplemented with $100{\mu}M\;CuCl_2$ for pre-adaptation to Cu and cultured for 5 months. Then, these plantlets were individually planted in pots containing artificial soil. An additional 500 mg of Cu dissolved in 1/4 strength MS solution was applied to each pot during irrigation over the course of 2 months. We planted pre-adapted and control begonias in soil from the II-Kwang Mine, an abandoned Cu mine in Pusan, Korea, to examine their ability to tolerate and accumulate Cu for phytore-mediation. Pre-adapted begonias accumulated $1,200{\mu}g$ Cu/g dry root tissue over the course of 45 days. On the other hand, non-Cu-adapted controls accumulated only $85{\mu}g$ Cu/g dry root tissue. To enhance Cu extraction, chelating agents, ethylenediamine tetraacetic acid (EDTA)-dipotassiun and pyridine-2,6-dicarboxylic acid (PDA), were applied. While the chelating agents did not enhance accumulation of Cu in the roots of control begonias, EDTA application increased the level of Cu in the roots of pre-adapted begonias twofold (to $2,500{\mu}g$ Cu/g dry root tissue). Because pre-adapted begonias accumulated a large amount of Cu, mainly in their roots, they could be used for phytostabilization of Cu-contaminated soils. In addition, as a flowering plant, begonias can be used to create aesthetically pleasing remediation sites.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.45-49
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• 2006

The changes in the optical anisotropy of the clean Cu(110) and the oxygen covered Cu(110) surfaces due to Cu growth have been studied by reflectance difference spectroscopy(RDS). We have monitored the growth mode of Cu atoms on Cu(110) and Cu(110)-(2XlO surfaces at 250K and checked the surfactant effect of oxygen during the Cu growth. For Cu grow on Cu(110) and Cu(110)-(2Xl)O surface at low temperature, we observed evidence for the layer-by-layer growth mode with change of 4.25eV peak intensity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.193-196
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• 2001

Single phase $CuInS_2$ thin film with the highest diffraction peak (112) at diffraction angle $(2\theta)$ of $27.7^{\circ}$ and the second highest diffraction peak (220) at diffraction angle $(2\theta)$ of $46.25^{\circ}$ was well made with chalcopyrite structure at substrate temperature of $70^{\circ}C$, annealing temperature of $250^{\circ}C$, annealing time of 60 min. The $CuInS_2$ thin film had the greatest grain size of $1.2{\mu}m$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that $CuInS_2$ thin film was 5.60 A and 11.12 A respectively. Single phase $CuInS_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type $CuInS_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of $CuInS_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type $CuInS_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, $3.0{\times}104cm^{-1}$ and 1.48 eV respectively. When Cu/In composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type $CuInS_2$ thin film was 821 nm, $6.0{\times}10^4cm^{-1}$ and 1.51 eV respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.152-153
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• 2007

$CuInSe_2$ single crystal thin film was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Cu}$, $V_{Se}$, $Cu_{lnt}$, and $Se_{lnt}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.