• Title/Summary/Keyword: Cu-Ga-In

Search Result 388, Processing Time 0.03 seconds

Analysis of Photovoltaic Performance Improvement of Cu2Zn1-xCdxSn(SxSe1-x)4 Thin Film Solar Cells by Controlling Cd2+ Element Alloying Time Using CBD Method (CBD 공법을 이용하여 Cd2+ 원소 Alloying 시간을 조절한 Cu2Zn1-xCdxSn(SxSe1-x)4 박막 태양전지의 광전지 성능 향상 분석)

  • Sang Woo, Park;Suyoung, Jang;Jun Sung, Jang;Jin Hyeok, Kim
    • Korean Journal of Materials Research
    • /
    • v.32 no.11
    • /
    • pp.481-488
    • /
    • 2022
  • The Cu2ZnSn(SxSe1-x)4 (CZTSSe) absorbers are promising thin film solar cells (TFSCs) materials, to replace existing Cu(In,Ga)Se2 (CIGS) and CdTe photovoltaic technology. However, the best reported efficiency for a CZTSSe device, of 13.6 %, is still too low for commercial use. Recently, partially replacing the Zn2+ element with a Cd2+element has attracting attention as one of the promising strategies for improving the photovoltaic characteristics of the CZTSSe TFSCs. Cd2+ elements are known to improve the grain size of the CZTSSe absorber thin films and improve optoelectronic properties by suppressing potential defects, causing short-circuit current (Jsc) loss. In this study, the structural, compositional, and morphological characteristics of CZTSSe and CZCTSSe thin films were investigated using X-ray diffraction (XRD), X-ray fluorescence spectrometer (XRF), and Field-emission scanning electron microscopy (FE-SEM), respectively. The FE-SEM images revealed that the grain size improved with increasing Cd2+ alloying in the CZTSSe thin films. Moreover, there was a slight decrease in small grain distribution as well as voids near the CZTSSe/Mo interface after Cd2+ alloying. The solar cells prepared using the most promising CZTSSe absorber thin films with Cd2+ alloying (8 min. 30 sec.) exhibited a power conversion efficiency (PCE) of 9.33 %, Jsc of 34.0 mA/cm2, and fill factor (FF) of 62.7 %, respectively.

Solar Photovoltaics Technology: No longer an Outlier

  • Kazmerski, Lawrence L.
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2011.08a
    • /
    • pp.70-70
    • /
    • 2011
  • The prospects of current and coming solar-photovoltaic (PV) technologies are envisioned, arguing this solar-electricity source is beyond a tipping point in the complex worldwide energy outlook. Truly, a revolution in both the technological advancements of solar PV and the deployment of this energy technology is underway; PV is no longer an outlier. The birth of modern photovoltaics (PV) traces only to the mid-1950s, with the Bell Telephone Laboratories' development of an efficient, single-crystal Si solar cell. Since then, Si has dominated the technology and the markets, from space through terrestrial applications. Recently, some significant shift toward technology diversity have taken place. Some focus of this presentation will be directed toward PV R&D and technology advances, with indications of the limitations and relative strengths of crystalline (Si and GaAs) and thin-film (a-Si:H, Si, Cu(In,Ga)(Se,S)2, CdTe). Recent advances, contributions, industry growth, and technological pathways for transformational now and near-term technologies (Si and primarily thin films) and status and forecasts for next-generation PV (nanotechnologies and non-conventional and "new-physics" approaches) are evaluated. The need for R&D accelerating the now and imminent (evolutionary) technologies balanced with work in mid-term (disruptive) approaches is highlighted. Moreover, technology progress and ownership for next generation solar PV mandates a balanced investment in research on longer-term (the revolution needs revolutionary approaches to sustain itself) technologies (quantum dots, multi-multijunctions, intermediate-band concepts, nanotubes, bio-inspired, thermophotonics, ${\ldots}$ and solar hydrogen) having high-risk, but extremely high performance and cost returns for our next generations of energy consumers. This presentation provides insights to the reasons for PV technology emergence, how these technologies have to be developed (an appreciation of the history of solar PV)-and where we can expect to be by this mid-21st century.

  • PDF

Distribution of Phytoavailable Heavy Metals in the Korean Agricultural Soils Affected by the Abandoned Mining Sites and Soil Properties Influencing on the Phytoavailable Metal Pools

  • Lim, Ga-Hee;Kim, Kye-Hoon;Seo, Byoung-Hwan;Kim, Kwon-Rae
    • Korean Journal of Soil Science and Fertilizer
    • /
    • v.47 no.3
    • /
    • pp.191-198
    • /
    • 2014
  • Absorption and accumulation of heavy metals in plants were determined by phytoavailable contents rather than total contents of heavy metals. Therefore, phytoavailability-based management protocol should be prepared for safe food crop production in contaminated agricultural lands. This study was conducted to understand the distribution and phytoavailability of heavy metal in the Korean agricultural soils affected by abandoned mining sites along with investigation of soil properties (soil pH, OM, DOC, clay content, Al/Fe/Mn content) influencing on the metal phytoavailability. For this, 142 agricultural soils located nearby 39 abandoned mining sites distributed in five province in Korea, were analyzed. Among the four different heavy metals, cadmium (Cd) and zinc (Zn) appeared to exist in more phytoavailable form than cupper (Cu) and lead (Pb). Soil pH was the main factor governing phytoavailable Cd, Pb, and Zn showing positive relationship with partitioning coefficients of the corresponding metals; Cd (r = 0.66, P < 0.001), Pb (r = 0.70, P < 0.001), and Zn (r = 0.62, P < 0.001). This implied higher phytoavailability of the corresponding metals with higher soil pH. In contrast, phytoavailability of Cu (r = 0.41, p < 0.01) was only negatively related with soil DOC (dissolved organic carbon).

PSMA Inhibitors for Nuclear Imaging and Radiotherapy of Prostate Cancer

  • Sajid Mushtaq;Tugsuu Uyanga;Park Ji Ae;Jung Young Kim
    • Journal of Radiopharmaceuticals and Molecular Probes
    • /
    • v.9 no.1
    • /
    • pp.23-33
    • /
    • 2023
  • Prostate cancer ranks as the world's second most frequently diagnosed cancer among men, and is responsible for the fifth highest number of cancer-related deaths in this population. The development of effective diagnostic and therapeutic approaches for prostate cancer remains a major challenge in the field of oncology. Over the past few years, the prostate-specific membrane antigen (PSMA) has raised as a hopeful tracer for the diagnosis and treatment of prostate cancer.Various radioisotopes, such as 131I, 99mTc, 68Ga, and 177Lu, have been used to label PSMA analogues, with varying degrees of success. Among these, 68Ga-PSMA-11 and 177Lu-PSMA-617 have emerged as the most promising radioligands for clinical use. Recently, researchers have been exploring the use of other radioisotopes, such as 211At, 89Zr, 64/67Cu, and 203/212Pb, for the labeling of PSMA-targeted radioligands. These radioisotopes have unique properties that may offer advantages over existing radioligands, such as longer half-lives, higher specific activities, and different emission profiles. Efforts are currently underway to develop these radiopharmaceuticals and make them more widely available for clinical use. These exciting developments highlight the potential of PSMA-targeted radioligands for the diagnosis and treatment of prostate cancer, and provided significant implications for the management of this disease in the future. The current study aims to provide a comprehensive summary of the latest research and clinical applications of radiolabeled PSMA inhibitors for diagnoses and therapy of prostate cancer, emphasizing the exciting developments in the field and their potential impact on clinical practice.

The Study on Cu2ZnSnSe4 Thin Films without Annealed Grown by Pulsed Laser Deposition for Solar Cells

  • Bae, Jong-Seong;Byeon, Mi-Rang;Hong, Tae-Eun;Kim, Jong-Pil;Jeong, Ui-Deok;Kim, Yang-Do;O, Won-Tae
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.398.1-398.1
    • /
    • 2014
  • The $Cu_2ZnSnSe_4$ (CZTSe) thin films solar cell is one of the next generation candidates for photovoltaic materials as the absorber of thin film solar cells because it has optimal bandgap (Eg=1.0eV) and high absorption coefficient of $10^4cm^{-1}$ in the visible length region. More importantly, CZTSe consists of abundant and non-toxic elements, so researches on CZTSe thin film solar cells have been increasing significantly in recent years. CZTSe thin film has very similar structure and properties with the CIGS thin film by substituting In with Zn and Ga with Sn. In this study, As-deposited CZTSe thin films have been deposited onto soda lime glass (SLG) substrates at different deposition condition using Pulsed Laser Deposition (PLD) technique without post-annealing process. The effects of deposition conditions (deposition time, deposition temperature) onto the structural, compositional and optical properties of CZTSe thin films have been investigated, without experiencing selenization process. The XRD pattern shows that quaternary CZTSe films with a stannite single phase. The existence of (112), (204), (312), (008), (316) peaks indicates all films grew and crystallized as a stannite-type structure, which is in a good agreement with the diffraction pattern of CZTSe single crystal. All the films were observed to be polycrystalline in nature with a high (112) predominant orientation at $2{\theta}{\sim}26.8^{\circ}$. The carrier concentration, mobility, resistivity and optical band gap of CZTSe thin films depending on the deposition conditions. Average energy band gap of the CZTSe thin films is about 1.3 eV.

  • PDF

The Materials Science of Chalcopyrite Materials for Solar Cell Applications

  • Rockett, Angus
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2011.08a
    • /
    • pp.53-53
    • /
    • 2011
  • This paper describes results for surface and bulk characterization of the most promising thin film solar cell material for high performance devices, (Ag,Cu) (In,Ga) Se2 (ACIGS). This material in particular exhibits a range of exotic behaviors. The surface and general materials science of the material also has direct implications for the operation of solar cells based upon it. Some of the techniques and results described will include scanning probe (AFM, STM, KPFM) measurements of epitaxial films of different surface orientations, photoelectron spectroscopy and inverse photoemission, Auger electron spectroscopy, and more. Bulk measurements are included as support for the surface measurements such as cathodoluminescence imaging around grain boundaries and showing surface recombination effects, and transmission electron microscopy to verify the surface growth behaviors to be equilibrium rather than kinetic phenomena. The results show that the polar close packed surface of CIGS is the lowest energy surface by far. This surface is expected to be reconstructed to eliminate the surface charge. However, the AgInSe2 compound has yielded excellent atomic-resolution images of the surface with no evidence of surface reconstruction. Similar imaging of CuInSe2 has proven more difficult and no atomic resolution images have been obtained, although current imaging tunneling spectroscopy images show electronic structure variations on the atomic scale. A discussion of the reasons why this may be the case is given. The surface composition and grain boundary compositions match the bulk chemistry exactly in as-grow films. However, the deposition of the heterojunction forming the device alters this chemistry, leading to a strongly n-type surface. This also directly explains unpinning of the Fermi level and the operation of the resulting devices when heterojunctions are formed with the CIGS. These results are linked to device performance through simulation of the characteristic operating behaviors of the cells using models developed in my laboratory.

  • PDF

Evaluation of Results in Recent Flexible Solar Cell Research Trends via Network Analysis Method (네트워크 분석을 이용한 플렉시블 태양전지 최근 연구동향 분석)

  • Byun, Kisik;Lim, Jae Sung;Park, Jae Woo
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.19 no.6
    • /
    • pp.600-613
    • /
    • 2018
  • The purpose of this research was to introduce a network analysis method for analyzing the recent trend of the flexible solar cell using a scholarly database. Based on the five years from 2013 to 2017, we used centrality analysis of research papers via measurement of degree centrality, closeness centrality, and betweenness centrality. The results of network analysis show that cell has a centrality value above 0.8, which means that cell is connected with 80% of the total keywords, so it is recognized as the center of flexible solar cell research. The analysis results also indicate that perovskite and copper indium gallium diselenide (CuInGaSe2, or CIGS) are the center of the subgroup for cell. We recognize that the result refers to recent new technology called the CIGS/perovskite tandem solar cell. We hope that the network analysis method will be the appropriate and precise tool for technology and research planning via elaboration and optimization.

Synthesis and Characterization of CZTS film deposited by Chemical Bath Deposition method

  • Arepalli, Vinaya Kumar;Kumar, Challa Kiran;Park, Nam-Kyu;Nang, Lam Van;Kim, Eui-Tae
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 2012.05a
    • /
    • pp.99.1-99.1
    • /
    • 2012
  • The thin-film photovoltaic absorbers (CdTe and $Cu(In,Ga)Se_2$) can achieve solar conversion efficiencies of up to 20% and are now commercially available, but the presence of toxic (Cd,Se) and expensive elemental components (In, Te) is a real issue as the demand for photovoltaics rapidly increases. To overcome these limitations, there has been substantial interest in developing viable alternative materials, such as $Cu_2ZnSnS_4$ (CZTS) is an emerging solar absorber that is structurally similar to CIGS, but contains only earth abundant, non-toxic elements and has a near optimal direct band gap energy of 1.4 - 1.6 eV and a large absorption coefficient of ~104 $cm^{-1}$. The CZTS absorber layers are grown and investigated by various fabrication methods, such as thermal evaporation, e-beam evaporation with a post sulfurization, sputtering, non-vacuum sol-gel, pulsed laser, spray-pyrolysis method and electrodeposition technique. In the present work, we report an alternative aqueous chemical approach based on chemical bath deposition (CBD) method for large area deposition of CZTS thin films. Samples produced by our method were analyzed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, absorbance and photoluminescence. The results show that this inexpensive and relatively benign process produces thin films of CZTS exhibiting uniform composition, kesterite crystal structure, and some factors like triethanolamine, ammonia, temperature which strongly affect on the morphology of CZTS film.

  • PDF

Dependence of reaction temperature on the properties of CdS thin films grown by Chemical Bath Deposition (Chemical Bath Deposition으로 성장한 CdS 박막의 반응온도에 대한 특성)

  • Lee, Ga-Yeon;Yu, Hyeon-Min;Lee, Jae-Hyeong
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2010.05a
    • /
    • pp.805-808
    • /
    • 2010
  • In this paper, CdS thin films, which were widey used window layer of the CdS/CdTe and the CdS/$CuInSe_2$ heterojunction solar cell, were grown by chemical bath deposition, and effects of temperature of reaction solution on the structural properties were investigated. Cadmium acetate and thiourea were used as cadmium and sulfur source, respectively. And ammonium acetate was used as the buffer solution. The reaction velocity was increased with increasing temerature of reaction solution. For temperature <= $85^{\circ}C$, as increasing temperature of solution, deposition rate of CdS films was increased by ion-by-ion reaction in the substrate surface, and the crystallinity of the films was improved. However, for temperature <= $55^{\circ}C$, deposition rate was decreased resulting from smaller Cd2+ ion, and the grain size was decreased.

  • PDF

GHz Bandwidth Characteristics of Rectangular Spiral type Thin Film Inductors (사각 나선형 박막 인덕터의 GHz 대역 특성)

  • Kim, J.;Jo, S.
    • Journal of the Korean Magnetics Society
    • /
    • v.14 no.1
    • /
    • pp.52-57
    • /
    • 2004
  • In this research, characteristics of air core rectangular spiral type inductors of ㎓ band are numerical analyzed. The basic structure of inductors is a rectangular spiral having 390${\mu}{\textrm}{m}$${\times}$390${\mu}{\textrm}{m}$ size, 5.5 turns, line width of 10 ${\mu}{\textrm}{m}$ and line space of 10 ${\mu}{\textrm}{m}$. Frequency characteristics were simulated up to 10 ㎓. The substrate was modeled as Si, Sapphire, glass and GaAs and the conductor as Cu. The thickness of the conductor was fixed at 2. The number of turns was n.5 to make the input and output terminals to be on the opposite sides. The initial inductance of the basic inductor structure was 13.0 nH, maximum inductance 60.0 nH and resonance frequency 4.25 ㎓. As the dielectric constant of the substrate was increased, the initial inductance varied only slightly, but the resonance frequency decreased considerably. As the number of turns was varied from 1.5 to 9.5, the initial inductance was increased linearly from 2.9 nH to 15.9 nH and, then, saturated at 16.9 nH. The Q factor increased only slightly. The line width and line space of inductors were varied from 5 ${\mu}{\textrm}{m}$ to 20 ${\mu}{\textrm}{m}$, which resulted in the decrease of the initial and maximum inductances. But the resonance frequency was increased. Q factor displayed an increase and a decrease, respectively, when the line width and line space were increased.