• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.53-58
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• 2008

In this study, we fabricated embedded IC (Double Pole Double throw switch chip) polymer substrate and evaluate it for 2.4 GHz WiFi application. The switch chips were laminated using FR4 and ABF(Ajinomoto build up film) as dielectric layer. The embedded DPDT chip substrate were interconnected by laser via and Cu pattern plating process. DSC(Differenntial Scanning Calorimetry) analysis and SEM image was employed to calculate the amount of curing and examine surface roughness for optimization of chip embedding process. ABF showed maximum peel strength with Cu layer when the procuring was $80\sim90%$ completed and DPDT chip was laminated in a polymer substrate without void. An embedded chip substrate and wire-bonded chip on substrate were designed and fabricated. The characteristics of two modules were measured by s-parameters (S11; return loss and S21; insertion loss). Insertion loss is less than 0.55 dB in two presented embedded chip board and wire-bonded chip board. Return loss of an embedded chip board is better than 25 dB up to 6 GHz frequency range, whereas return loss of wire-bonding chip board is worse than 20 dB above 2.4 GHz frequency.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.79-90
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• 2007

Prototype of $800{\ell}$ vacuum web coater (Vic Mama) consisting of ion source with low energy less than 250 eV for high speed surface modification and 4 magnetron sputter cathodes was designed and constructed. Its performance was evaluated through fabricating the adhesiveless flexible copper clad laminate (FCCL). Pumping speed was monitored in both upper noncoating zone pumped down by 2 turbo pumps with 2000 l/sec pumping speed and lower surface modification and sputter zone vacuumed by turbo pumps with 450 1/sec and 1300 1/sec pumping speed respectively. Ion current density, plasma density, and uniformity of ion beam current were measured using Faraday cup and the distribution of magnetic field and erosion efficiency of sputter target were also investigated. With the irradiation of ion beams on polyimide (Kapton-E, $38{\mu}m$) at different fluences, the change of wetting angle of the deionized water to polyimide surface and those of surface chemical bonding were analyzed by wetting anglometer and x-ray photoelectron spectroscopy. After investigating the deposition rate of Ni-Cr tie layer and Cu layer was investigated with the variations of roll speed and input power to sputter cathode. FCCL fabricated by sputter and electrodeposition method and characterized in terms of the peel strength, thermal and chemical stability.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.576-583
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• 2018

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its band gap is larger than that of silicon and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, porous n-type SiC ceramics fabricated from ${\beta}-SiC$ powder have been found to show a high thermoelectric conversion efficiency in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$. For the application of SiC thermoelectric semiconductors, their figure of merit is an essential parameter, and high temperature (above $800^{\circ}C$) electrodes constitute an essential element. Generally, ceramics are not wetted by most conventional braze metals,. but alloying them with reactive additives can change their interfacial chemistries and promote both wetting and bonding. If a liquid is to wet a solid surface, the energy of the liquid-solid interface must be less than that of the solid, in which case there will be a driving force for the liquid to spread over the solid surface and to enter the capillary gaps. Consequently, using Ag with a relatively low melting point, the junction of the porous SiC semiconductor-Ag and/or its alloy-SiC and/or alumina substrate was studied. Ag-20Ti-20Cu filler metal showed promise as the high temperature electrode for SiC semiconductors.

• Journal of The Korean Society of Grassland and Forage Science
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• v.28 no.1
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• pp.19-28
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• 2008

Effect of Water Treatment Sludge(WTS) on trace metals content in Sorghum(Sorghum bicolor(L.) Moench) was investigated. At this report measuring of nickel(Ni) content of the forage was presented. Four treatments, Control, Compost, Alum+(nitrogen, phosphorus, potassium)(NPK), Compost+NPK, were applied to the sorghum in a mountainous place near the Joongbu University. With the 1, 3, 5 hours conditions, the background value was the least on the 5 hours warming up of the AA-680 spectrophotometer, and on the condition(mean/SD) of absorbances of Ni observed was the most. It is necessary in Ni analysis warming up for longer period around 5 hours for this type of apparatus. And we think that the difference of warming time for Ni analysis in order to carry out better measuring; the reason might be the larger bonding energy of Ni than those of Cu, calcium(Ca), magnesium(Mg) and (potassium)(K).

• Journal of Adhesion and Interface
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• v.8 no.1
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• pp.15-27
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• 2007

Polyimide (PI) surface modification was carried out by ion-beam treatment and silane-imidazole coupling agent to improve the adhesion between polyimide film and copper. Silane-imidazole coupling agent contains imidazole functional groups for the formation of a complex with copper metal through a coordination bonding and methoxy silane groups for the formation of siloxane polymers. The PI film surface was first treated by argon (Ar)/oxygen ($O_2$) ion-beam, followed by dipping it into a modified silane-imidazole coupling agent solution. The results of X-ray photoelectron spectroscopy (XPS) spectra revealed that the $Ar/O_2$ plasma treatment formed oxygen functional groups such as hydroxyl and carbonyl groups on the polyimide film surface and confirmed that the PI surface was modified by a coupling reaction with imidazole-silane coupling agent. Adhesion between copper and the treated PI film by ion-beam and coupling agent was superior to that with untreated PI film. In addition, adhesion of PI film treated by an $Ar/O_2$ plasma to copper was better than that of PI film treated by a coupling agent. The peeled-off layers from the copper-PI film joint were completely different in chemical composition each other. The layer of PI film side showed similar C1s, N1s, O1s spectra to the original Upilex-S and no Si and Cu atoms appeared. On the other hand the layer of copper side showed different C1s and N1s spectra from the original PI film and many Si and Cu atoms appeared. This indicates that the failure occurs at an interface between the imidazole-silane and PI film layers rather than within the PI layers.

• Journal of the Korean Chemical Society
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• v.26 no.5
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• pp.265-273
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• 1982

The effect of ${\pi}$ bonds on the calculated dipole moments for square planar and tetrahedral [M(II)$O_2S_2$]] type complexes has been investigated by two different approaches. One is the approximate molecular orbital method based on the assumption that the mixing coefficient CM of the valence basis sets for the central metal ion and the appropriate ligand orbitals is equal for all ${\sigma}$ and ${\pi}$ bonding molecular orbitals. The other is the more refined calculation based on the semiempirical LCAO-MO method. If ${\sigma}$ bonds only are assumed to be formed, the calculated dipole moments for square planar and tetrahedral complexes are lower than those of the experimental values. If the contribution of ${\pi}$ bonds to the calculated dipole moments are fully considered, the calculated dipole moments for both square planar and tetrahedral [M(II)$O_2S_2$]] type complexes are higher than the experimental values. However if ${\pi}$ bonds are assumed to be delocalzed, the calculated dipole moments for tetrahedral [M(II$O_2S_2$]] type complexes fall in the range of the experimental values, but those for square planar complexes deviate from the experimental values. These results suggest that [M(II)$O_2S_2$]] type complexes may have the tetrahedral structure in inert solvent solution. This structure is in agreement with the experimental one. The calculated dipole moments for tetrahedral [M(II)$O_2S_2$]] type complexes indicate that the contribution of ${\pi}$ bonds to the calculated dipole moments may not be neglected.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.97-103
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• 2014

Among various lead-free solders, the Sn-58Bi solders have been considered as a highly promising lead-free solders because of its low melting temperature and high tensile strength. However, Sn-58Bi solder has the poor ductility. To enhance the mechanical property of Sn-58Bi solder, epoxy-enhanced Sn-58Bi solders have been studied. This study compared the microstructures and the mechanical properties of Sn-58Bi solder and Sn-58Bi epoxy solder with aging treatment. The solders ball were formed on the printed circuit board (PCB) with organic solderability preservative (OSP) surface finish, and then the joints were aged at 85, 95, 105 and $115^{\circ}C$ for up to 100, 300, 500 and 1000 hours. The shear test was conducted to evaluate the mechanical property of the solder joints. $Cu_6Sn_5$ intermetallic compound (IMC) layer grew with increasing aging time and temperature. The IMC layer for the Sn-58Bi epoxy solder was thicker than that for the Sn-58Bi solder. According to result of shear test, the shear strength of Sn-58Bi epoxy solder was higher than that of Sn-58Bi solder and the shear strength decreased with increasing aging time.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.47-54
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• 2021

For the bonding of smaller PCB solder bumps of less than 100 microns, an experiment was performed to make up a tin plating solution and find plating conditions in order to produce a bump pattern through tin electroplating, replacing the previous PCB solder bumps process by microballs. After SR patterning, a Cu seed layer was formed, and then, through DFR patterning, a pattern in which Sn can be selectively plated only within the SR pattern was formed on the PCB substrate. The tin plating solution was made based on methanesulfonic acid, and hydroquinone was used as an antioxidant to prevent oxidation of divalent tin ions. Triton X-100 was used as a surfactant, and gelatin was used as a grain refiner. By measuring the electrochemical polarization curve, the characteristics of organic additives in Triton X-100 and gelatin were compared. It was confirmed that the addition of Triton X-100 suppressed hydrogen generation up to -1 V vs. NHE, whereas gelatin inhibited hydrogen generation up to -0.7 V vs. NHE. As the current density increased, there was a general tendency that the grain size became finer, and it was observed that it became finer when gelatin was added.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.2
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• pp.69-77
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• 2024

Due to the miniaturization and multifunctionality of electronic devices, a surface mount technology in the form of molded interconnect devices (MID), which directly forms electrodes and circuits on the plastic injection parts and mounts components and parts on them, is being introduced to overcome the limitations in the mounting area of electronic components. However, when using plastic injection parts with low thermal stability, there are difficulties in mounting components through the conventional reflow process. In this study, we developed a process that utilizes induction heating, which can selectively heat specific areas or materials, to melt solder and mount components without causing any thermal damage to the plastic. We designed the shape of an induction heating Cu coil that can concentrate the magnetic flux on the area to be heated, and verified the concentration of the magnetic flux and the degree of heating on the pad part through finite element method (FEM). LEDs, capacitors, resistors, and connectors were mounted on a polycarbonate substrate using induction heating to verify the mounting process, and their functionality was confirmed. We presented the applicability of a selective heating process through magnetic induction that can overcome the limitations of the reflow method.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.13-16
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• 2013

A lot of various researches have been going on to use heat spreader for LED module. Nano porous aluminum anodic oxide (AAO) applied LED, which is produced from anodization, is easy and economically advantageous. Convensional LED module is consist of aluminum/adhesive/copper circuit. The polymer adhesive in this module is used as heat spreader. However the thermal emission of LED component is degraded because of low heat conductivity of polymer and also reliability of LED component is reduced. Therefore, AAO in this work was applied to heat spreader of LED module which has higher heat conductivity compare to polymer. Bonding strength between AAO and copper circuit was improved with Ti/Cu seed layer by copper sputtering process (DBC) before the bonding. And this copper circuit has been fabricated by electro plating method. Peel strength of AAO and copper circuit in this work showed range between 1.18~1.45 kgf/cm with anodizing process which is very suitable for high power LED application.