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http://dx.doi.org/10.6117/kmeps.2021.28.1.047

A Study on the Microstructure Formation of Sn Solder Bumps by Organic Additives and Current Density  

Kim, Sang-Hyeok (Department of Materials Science and Engineering, Dong-A University)
Kim, Seong-Jin (Department of Materials Science and Engineering, Dong-A University)
Shin, Han-Kyun (Department of Materials Science and Engineering, Dong-A University)
Heo, Cheol-Ho (Substrate Solution, Samsung Electro-Mechanics)
Moon, Seongjae (Substrate Solution, Samsung Electro-Mechanics)
Lee, Hyo-Jong (Department of Materials Science and Engineering, Dong-A University)
Publication Information
Journal of the Microelectronics and Packaging Society / v.28, no.1, 2021 , pp. 47-54 More about this Journal
Abstract
For the bonding of smaller PCB solder bumps of less than 100 microns, an experiment was performed to make up a tin plating solution and find plating conditions in order to produce a bump pattern through tin electroplating, replacing the previous PCB solder bumps process by microballs. After SR patterning, a Cu seed layer was formed, and then, through DFR patterning, a pattern in which Sn can be selectively plated only within the SR pattern was formed on the PCB substrate. The tin plating solution was made based on methanesulfonic acid, and hydroquinone was used as an antioxidant to prevent oxidation of divalent tin ions. Triton X-100 was used as a surfactant, and gelatin was used as a grain refiner. By measuring the electrochemical polarization curve, the characteristics of organic additives in Triton X-100 and gelatin were compared. It was confirmed that the addition of Triton X-100 suppressed hydrogen generation up to -1 V vs. NHE, whereas gelatin inhibited hydrogen generation up to -0.7 V vs. NHE. As the current density increased, there was a general tendency that the grain size became finer, and it was observed that it became finer when gelatin was added.
Keywords
electroplating; tin; Triton X-100; gelatin; electron backscattering diffraction (EBSD);
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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