• 제목/요약/키워드: Cu-Cu Bonding

검색결과 333건 처리시간 0.044초

비정질 $Al_2O_3$ 코아 재료를 이용한 Solenoid 형태의 고품질 RF chip 인덕터에 관한 연구 (A Study of High-Quality Factor Solenoid-Type RF Chip Inductor Utilizing Amorphous $Al_2O_3$ Core Material)

  • 이재욱;정영창;윤의중;홍철호
    • 대한전자공학회논문지SD
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    • 제37권6호
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    • pp.34-42
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    • 2000
  • 우수한 성능을 가지며 소형${\cdot}$경량인 무선통신기기를 구현하기 위해서는 GHz 대의 고주파수에서 동작하는 소형 RF chip 인덕터의 개발은 중요한 연구분야가 되어왔다. 또한 최근 많이 사용되는 자성 ferrite core 재료는 300MHz 이상의 주파수영역에서 자화율이 급속하게 감소하여 고성능 RF chip 인덕터 개발에 큰 장애가 되고 있다. 따라서 본 논문에서는 비정질 $Al_2O_3$ 코아 재료를 응용한 단순 solenoid 형태의 소형${\cdot}$고성능 RF chip 인덕터를 연구하였다. Cu를 코일 (직경=40${\mu}m$)로 사용하였고 인덕터 크기는 $2.1mm{\times}1.5mm{\times}1.0mm$였다. 외부 전류원은 코일의 양단을 코아 가장자리에 적층된 Au 막에 본딩시킨 후 인가되었다. 코아의 성분은 EDX를 사용하여 분석하였다 개발된 인덕터의 인덕턴스 (L), quality factor (Q), 인피던스(Z)등의 주파수 특성은 RF impedance/Material Analyzer (HP16193A test fixture가 장착된 HP4291B)로 측정되었다. 인덕터들의 인덕턴스 값은 22 nH ~ 150 nH 범위를 가지며, 이들의 자기공진주파수 (SRF)는 1~3.5GHz 영역을 나타낸다. 또한 자기공진주파수가 증가함에 따라 인덕턴스 값이 감소하는 경향을 보이고 있다. 임피던스는 공진주파수에서 최대 값을 가지며 Q-factor의 값은 500 MHz ~ 1.5 GHz 주파수 범위에서 최대 70~97까지 얻어졌다.

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몽골 도르릭나르스 흉노 무덤 2~4호분 출토 청동 및 금제 유물 분석 (Analysis of Bronze Artifacts and Gold Ornaments Excavated from Xiongnu Tombs No. 2~4 at Duurlig Nars in Mongolia)

  • 유혜선
    • 보존과학회지
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    • 제28권2호
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    • pp.175-184
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    • 2012
  • 본 연구는 몽골 도르릭나르스 유적 2호, 3호 및 4호분에서 출토된 청동제 및 금제 유물에 대한 과학적 분석 결과로부터 각 유적 출토품의 특징을 알아보는데 그 목적이 있다. 몽골의 흉노무덤인 도르릭나르스 유적 2호, 3호 및 4호분은 비교적 소형이고, 도굴 된 상태였음에도 불구하고 많은 유물이 다양하게 출토되었다. 특히 출토 유물에는 중국계 유물과 북방계 유물이 공존하고 있어 매우 중요한 유적으로 평가되고 있다. 먼저 청동 용기류의 경우 중국제인 한경이나 일산살 꼭지의 성분 조성과는 달리 주석에 비하여 납의 함유량이 높은 특징을 보였는데, 특히 2호의 청동쟁반, 청동등잔 그리고 4호의 청동솥의 경우는 주석이 1wt% 정도로 적게 함유되어 있어 Cu-Pb의 2원계 합금 조성을 보였다. 금제품의 경우는 2호분 장식품의 제작에 비교적 높은 순도의 금이 사용된 것으로 조사되었으며, 금제 누금 장식의 금 알갱이의 접합에는 금과 구리를 합금한 금땜이 사용되었거나 확산접합(말라카이트나 산화구리 화합물 가루를 사용함)에 의하여 접합했을 가능성이 높았다. 향후 몽골지역 뿐만 아니라 다른 지역의 흉노 무덤 출토품에 대한 과학적 조사 및 분석이 더 많이 진행된다면 흉노 문화에 대한 더 많은 문제들을 해결할 수 있는 실마리를 제공하게 될 것이다.

Copper Interconnection and Flip Chip Packaging Laboratory Activity for Microelectronics Manufacturing Engineers

  • Moon, Dae-Ho;Ha, Tae-Min;Kim, Boom-Soo;Han, Seung-Soo;Hong, Sang-Jeen
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.431-432
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    • 2012
  • In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

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Ag층을 이용한 Sn과 In의 무 플럭스 접합 (Fluxless Bonding Method between Sn and In Bumps Using Ag Capping Layer)

  • 이승현;김영호
    • 마이크로전자및패키징학회지
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    • 제11권2호
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    • pp.23-28
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    • 2004
  • 본 실험에서는 Ag 층을 이용한 무 플럭스 접합 공정을 개발하였으며 Ag의 유무에 따른 효과를 관찰하기 위해 In ($10{\mu}m$)과 Sn ($10{\mu}m$)솔더 및 Ag (100 nm)/In과 Ag/Sn 솔더를 thermal evaporation 방법으로 하부 금속층 위에 형성하였다. 접합부의 접촉저항과 전단 하중을 측정하기 위해 쿠폰시편을 제조하였으며 이리한 쿠폰시편은 $130^{\circ}C$에서 0.8, 1.6, 3.2 MPa의 접합압력을 가하여 30초간 접합을 실시하였다. 전단하중과 4단자 저항측정법을 이용하여 접합부의 특성을 분석하였으며 주사전자현미경(Scanning Electron Microscope), EDS (Energy Dispersive Spectrometry)과 X-ray mapping을 통해 접합부를 관찰하였다. 전단하중 측정 결과 0.8 MPa에서는 In-Sn 솔더의 접합이 이루어지지 않았으며 접합압력이 증가해도 Ag/In-Ag/Sn 시편의 전단하중 측정값이 In-Sn 시편에 비해 높게 나타났다. 접합부의 저항감은 $2-4\;m{\Omega}$을 나타내었으며 접합압력이 증가할수록 In-Sn 혼합층이 더 많이 관찰되었다.

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Synthesis, Structure and Biological Properties of a Novel Copper (II) Supramolecular Compound Based on 1,2,4-Triazoles Derivatives

  • Qiu, Guang-Mei;Wang, Cui-Juan;Zhang, Ya-Jun;Huang, Shuai;Liu, Xiao-Lei;Zhang, Bing-Jun;Zhou, Xian-Li
    • Bulletin of the Korean Chemical Society
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    • 제33권8호
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    • pp.2603-2608
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    • 2012
  • A novel mononuclear supramolecule of copper(II) has been synthesized with Ippyt ligand (Ippyt=3-(4'-imidazole phenyl)-5-(pyrid-2''-yl)-1,2,4-triazole) (1). Compound 1, namely [$Cu(Ippyt)_2(H_2O)_2$], has been characterized by single-crystal X-ray diffraction, IR spectrum, elemental analysis and thermogravimetric analysis. Structure determination reveals that the elongated-octahedral geometry is formed in the vicinity of the copper (II) atom being coordinated by four nitrogen atoms from two Ippyt ligands occupying the equatorial position and two oxygen atoms from two coordinated water molecules in the axial position, which together form the $N_4O_2$ donor set. Hydrogen bonding interactions between nitrogen and oxygen atoms result in the set up of a supramolecular network architecture. Biological properties including antibacterial activity and superoxide dismutase (SOD) mimetic activity of compound 1 have been investigated by agar diffusion method and the modified Marklund method, respectively. The results indicate that compound 1 exhibits a stronger antibacterial efficiency than the parent ligand and it also has a certain radical-scavenging activity.

열처리 시간에 따른 Ni-P/Cr 이중 도금 층의 계면 거동에 관한 연구 (Effect of Heat Treatment on Interface Behavior in Ni-P/Cr Double Layer)

  • 최명희;박영배;이병호;변응선;이규환
    • 한국표면공학회지
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    • 제48권6호
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    • pp.260-268
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    • 2015
  • The thermal barrier coating (TBC) for inner wall of liquid-fuel rocket combustor consists of NiCrAlY as bonding layer and $ZrO_2$ as a top layer. In most case, the plasma spray coating is used for TBC process and this process has inherent possibility of cracking due to large difference in thermal expansion coefficients among bonding layer, top layer and metal substrate. In this paper, we suggest crack-free TBC process by using a precise electrodeposition technique. Electrodeposited Ni-P/Cr double layer has similar thermal expansion coefficient to the Cu alloy substrate resulting in superior thermal barrier performance and high temperature oxidation resistance. We studied the effects of phosphorous concentrations (2.12 wt%, 6.97 wt%, and 10.53 wt%) on the annealing behavior ($750^{\circ}C$) of Ni-P samples and Cr double layered electrodeposits. Annealing temperature was simulated by combustion test condition. Also, we conducted SEM/EDS and XRD analysis for Ni-P/Cr samples. The results showed that the band layers between Ni-P and Cr are Ni and Cr, and has no formed with heat treatment. These band layers were solid solution of Cr and Ni which is formed by interdiffusion of both alloy elements. In addition, the P was not found in it. The thickness of band layer was increased with increasing annealing time. We expected that the band layer can improve the adhesion between Cr and Ni-P.

Synthesis of metallic copper nanoparticles and metal-metal bonding process using them

  • Kobayashi, Yoshio;Nakazawa, Hiroaki;Maeda, Takafumi;Yasuda, Yusuke;Morita, Toshiaki
    • Advances in nano research
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    • 제5권4호
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    • pp.359-372
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    • 2017
  • Metallic copper nanoparticles were synthesised by reduction of copper ions in aqueous solution, and metal-metal bonding by using the nanoparticles was studied. A colloid solution of metallic copper nanoparticles was prepared by mixing an aqueous solution of $CuCl_2$ (0.01 M) and an aqueous solution of hydrazine (reductant) (0.2-1.0 M) in the presence of 0.0005 M of citric acid and 0.005 M of n-hexadecyltrimethylammonium bromide (stabilizers) at reduction temperature of $30-80^{\circ}C$. Copper-particle size varied (in the range of ca. 80-165 nm) with varying hydrazine concentration and reduction temperature. These dependences of particle size are explained by changes in number of metallic-copper-particle nuclei (determined by reduction rate) and changes in collision frequency of particles (based on movement of particles in accordance with temperature). The main component in the nanoparticles is metallic copper, and the metallic-copper particles are polycrystalline. Metallic-copper discs were successfully bonded by annealing at $400^{\circ}C$ and pressure of 1.2 MPa for 5 min in hydrogen gas with the help of the metalli-ccopper particles. Shear strength of the bonded copper discs was then measured. Dependences of shear strength on hydrazine concentration and reduction temperature were explained in terms of progress state of reduction, amount of impurity and particle size. Highest shear strength of 40.0 MPa was recorded for a colloid solution prepared at hydrazine concentration of 0.8 M and reduction temperature of $50^{\circ}C$.

식물 추출물을 이용한 모발용 천연염료 개발 - 석류 과피 추출물을 중심으로 - (Development of natural hairdye using the extracts of plants - The extracts of Pomegranate hull -)

  • 조아랑;신윤숙;류동일
    • 한국염색가공학회:학술대회논문집
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    • 한국염색가공학회 2008년도 제38차 학술발표대회
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    • pp.105-107
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    • 2008
  • Dyeing properties of the colorants extracted from pomegranate hull on hair were investigated to study its efficay of natural hair coloring dye. Effect of dyeing condition and mordanting on dye uptake, color change and colorfastness were explored. In addition, tensile strength retention is measured and the surface of the hair was observed by SEM. The water extracted pomegranate hull was concentrated and freeze-dried for preparing colorant powders. It was considered that ionic bonding was involved in the adsorption of pomegranate colorants to hair. Pomegranate hull colorants produced greyish brown colors on hair and the hair mordanted with Fe showed dark brown color. Mordant except Fe did not significantly increased dye uptake. Mordant except Cu increased light fastness, mordant except Cr increased washing fastness. SEM to observe the hair is damaged by ultraviolet light and cleaning. This is consistent with the results of tensile strength retention. From the results of colorfastness th washing and light, it was concluded that colorants from pomegranate hull can be need as a semi-permanent natural hair coloring dye.

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알루미늄 합금과 그 접합 방법 (Aluminum alloys and their joining methods)

  • 정도현;정재필
    • 마이크로전자및패키징학회지
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    • 제25권2호
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    • pp.9-17
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    • 2018
  • Aluminum (Al) and its alloys have been used widely in a variety of industries such as structural, electronic, aerospace, and particularly automotive industries due to their lightweight characteristic, outstanding ductility, formability, high oxidation and corrosion resistance, and high thermal and electrical conductivity. Al have different kinds of alloys according to the various additional elements system and they should be selected properly depending on their effectiveness and suitability for their particular purpose. The major elements for Al alloys are silicon (Si), magnesium (Mg), manganese (Mn), copper (Cu), and zinc (Zn). In order for Al alloys to use for each industry, it is necessary to study of Al to Al joining and/or the Al to dissimilar materials joining to combine the individual parts into one. Many studies on joining technologies about Al to Al and Al to dissimilar materials have been performed such as press joining, bolted joint, welding, soldering, riveting, adhesive bonding, and brazing. This study reviews a variety of Al alloys and their joining method including its principles and properties with recent trends.

분자 동역학 계산을 통한 결정질 실리콘 태양전지 기판에 콜드 스프레이 전극 형성 시 발생되는 비정질 구리상에 대한 용융 온도 변화 연구 (Melting Point of Amorphous Copper Phase on Crystalline Silicon Solar Cells During Cold Spray using Molecular Dynamics Calculations)

  • 김수민;강병준;정수정;강윤묵;이해석;김동환
    • Current Photovoltaic Research
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    • 제3권2호
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    • pp.61-64
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    • 2015
  • In solar industry, numerous researchers reported about cold spray method among various electrode formation technic, but there are no known a bonding mechanism of metal powder. In this study, a cross-section of copper electrode formed by cold spray method was observed and heterogeneous phase between silicon substrate and copper electrode was analyzed using morphology observation technic. SEM and TEM analysis were performed to analyze a crystallinity and distribution shape of heterogeneous copper phase. Molecular dynamics simulation was performed to calculate glass transition temperature of copper metal. In the result, amorphous copper phase was observed near interface between silicon substrate and metal electrode. The results of the molecular dynamics simulation show that an amorphous copper phase could be formed at a temperature below the melting point of copper because cold spraying resulted in a lower glass transition temperature.