• 제목/요약/키워드: Cu-Cu Bonding

검색결과 338건 처리시간 0.024초

디젤차량 싱크로나이저링을 위한 소결마찰재 개발 및 접합특성 평가 (Study on Friction Characteristic of Sintered Friction Component for Synchronizer-Ring of Diesel Vehicle)

  • 송준혁;김은성;김경재;오제하;양성모;강신재
    • 대한기계학회논문집A
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    • 제37권3호
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    • pp.373-378
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    • 2013
  • 엔진의 출력증대와 이에 따른 변속기의 크기 증가 등으로 인한 회전체의 관성증가로 변속기의 변속성능은 악조건이 되고 있다. 따라서, 이를 해결하기 위하여 내마모성이 높은 마찰소재의 개발이 요구된다. 디젤차량 수동변속기용 싱크로나이저 링에 요구되는 마찰특성에 적합한 소재를 개발하고, 이에 대한 접합 특성을 평가하였다. 즉, 철합금 모재와 동합금계 마찰재를 접합하는 공정을 개발하고, 접합층에 대하여 BSE분석, EDX분석을 수행하여 접합특성을 평가하였으며, 해당 시험편에 대하여 전단강도를 평가하였다.

다이 및 와이어 본딩 공정을 위한 Sn-Sb Backside Metal의 계면 구조 및 전단 강도 분석 (Enhancing Die and Wire Bonding Process Reliability: Microstructure Evolution and Shear Strength Analysis of Sn-Sb Backside Metal)

  • 최여진;백승문;이유나;안성진
    • 한국재료학회지
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    • 제34권3호
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    • pp.170-174
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    • 2024
  • In this study, we report the microstructural evolution and shear strength of an Sn-Sb alloy, used for die attach process as a solder layer of backside metal (BSM). The Sb content in the binary system was less than 1 at%. A chip with the Sn-Sb BSM was attached to a Ag plated Cu lead frame. The microstructure evolution was investigated after die bonding at 330 ℃, die bonding and isothermal heat treatment at 330 ℃ for 5 min and wire bonding at 260 ℃, respectively. At the interface between the chip and lead frame, Ni3Sn4 and Ag3Sn intermetallic compounds (IMCs) layers and pure Sn regions were confirmed after die bonding. When the isothermal heat treatment is conducted, pure Sn regions disappear at the interface because the Sn is consumed to form Ni3Sn4 and Ag3Sn IMCs. After the wire bonding process, the interface is composed of Ni3Sn4, Ag3Sn and (Ag,Cu)3Sn IMCs. The Sn-Sb BSM had a high maximum shear strength of 78.2 MPa, which is higher than the required specification of 6.2 MPa. In addition, it showed good wetting flow.

무연 솔더가 적용된 자동차 전장부품 접합부의 열적.기계적 신뢰성 평가 (Thermo-Mechanical Reliability of Lead-Free Surface Mount Assemblies for Auto-Mobile Application)

  • 하상수;김종웅;채종혁;문원철;홍태환;유충식;문정훈;정승부
    • Journal of Welding and Joining
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    • 제24권6호
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    • pp.21-27
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    • 2006
  • This study was focused on the evaluation of the thermo-mechanical board-level reliability of Pb-bearing and Pb-free surface mount assemblies. The composition of Pb-bearing solder was a typical Sn-37Pb and that of Pb-free solder used in this study was a representative Sn-3.0Ag-0.5Cu in mass %. Thermal shock test was chosen for the reliability evaluation of the solder joints. Typical $Cu_6Sn_5$ intermetallic compound (IMC) layer was formed between both solders and Cu lead frame at the as-reflowed state, while a layer of $Cu_3Sn$ was additionally formed between the $Cu_6Sn_5$ and Cu lead frame during the thermal shock testing. Thickness of the IMC layers increased with increasing thermal shock cycles, and this is very similar result with that of isothermal aging study of solder joints. Shear test of the multi layer ceramic capacitor(MLCC) joints was also performed to investigate the degradation of mechanical bonding strength of solder joints during the thermal shock testing. Failure mode of the joints after shear testing revealed that the degradation was mainly due to the excessive growth of the IMC layers during the thermal shock testing.

첨단 반도체 패키징을 위한 미세 피치 Cu Pillar Bump 연구 동향 (Recent Advances in Fine Pitch Cu Pillar Bumps for Advanced Semiconductor Packaging)

  • 노은채;이효원;윤정원
    • 마이크로전자및패키징학회지
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    • 제30권3호
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    • pp.1-10
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    • 2023
  • 최근, 고사양 컴퓨터, 모바일 제품의 수요가 증가하면서 반도체 패키지의 고집적화, 고밀도화가 요구된다. 따라서 많은 양의 데이터를 한 번에 전송하기 위해 범프 크기 및 피치 (Pitch)를 줄이고 I/O 밀도를 증가시킬 수 있는 플립 칩 (flip-chip), 구리 필러 (Cu pillar)와 같은 마이크로 범프 (Micro-bump)가 사용된다. 하지만 범프의 직경이 70 ㎛ 이하일 경우 솔더 (Solder) 내 금속간화합물 (Intermetallic compound, IMC)이 차지하는 부피 분율의 급격한 증가로 인해 취성이 증가하고, 전기적 특성이 감소하여 접합부 신뢰성을 악화시킨다. 따라서 이러한 점을 개선하기 위해 UBM (Under Bump Metallization) 또는 Cu pillar와 솔더 캡 사이에 diffusion barrier 역할을 하는 층을 삽입시키기도 한다. 본 review 논문에서는 추가적인 층 삽입을 통해 마이크로 범프의 과도한 IMC의 성장을 억제하여 접합부 특성을 향상시키기 위한 다양한 연구를 비교 분석하였다.

고속 화염 용사 공정을 이용한 스위칭 소자용 BCuP-5 filler 금속/Ag 기판 클래드 소재의 제조, 미세조직 및 접합 특성 (Fabrication, Microstructure and Adhesion Properties of BCuP-5 Filler Metal/Ag Plate Clad Material by Using High Velocity Oxygen Fuel Thermal Spray Process)

  • 주연아;조용훈;박재성;이기안
    • 한국분말재료학회지
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    • 제29권3호
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    • pp.226-232
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    • 2022
  • In this study, a new manufacturing process for a multilayer-clad electrical contact material is suggested. A thin and dense BCuP-5 (Cu-15Ag-5P filler metal) coating layer is fabricated on a Ag plate using a high-velocity oxygen-fuel (HVOF) process. Subsequently, the microstructure and bonding properties of the HVOF BCuP-5 coating layer are evaluated. The thickness of the HVOF BCuP-5 coating layer is determined as 34.8 ㎛, and the surface fluctuation is measured as approximately 3.2 ㎛. The microstructure of the coating layer is composed of Cu, Ag, and Cu-Ag-Cu3P ternary eutectic phases, similar to the initial BCuP-5 powder feedstock. The average hardness of the coating layer is 154.6 HV, which is confirmed to be higher than that of the conventional BCuP-5 alloy. The pull-off strength of the Ag/BCup-5 layer is determined as 21.6 MPa. Thus, the possibility of manufacturing a multilayer-clad electrical contact material using the HVOF process is also discussed.

TSV 기반 3차원 반도체 패키지 ISB 본딩기술 (ISB Bonding Technology for TSV (Through-Silicon Via) 3D Package)

  • 이재학;송준엽;이영강;하태호;이창우;김승만
    • 한국정밀공학회지
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    • 제31권10호
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    • pp.857-863
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    • 2014
  • In this work, we introduce various bonding technologies for 3D package and suggest Insert-Bump bonding (ISB) process newly to stack multi-layer chips successively. Microstructure of Insert-Bump bonding (ISB) specimens is investigated with respect to bonding parameters. Through experiments, we study on find optimal bonding conditions such as bonding temperature and bonding pressure and also evaluate in the case of fluxing and no-fluxing condition. Although no-fluxing bonding process is applied to ISB bonding process, good bonding interface at $270^{\circ}C$ is formed due to the effect of oxide layer breakage.

3차원 적층 패키지를 위한 ISB 본딩 공정의 파라미터에 따른 파괴모드 분석에 관한 연구 (Fracture Mode Analysis with ISB Bonding Process Parameter for 3D Packaging)

  • 이영강;이재학;송준엽;김형준
    • Journal of Welding and Joining
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    • 제31권6호
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    • pp.77-83
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    • 2013
  • 3D packaging technology using TSV (Through Silicon Via)has been studied in the recent years to achieve higher performance, lower power consumption and smaller package size because electrical line is shorter electrical resistivity than any other packaging technology. To stack TSV chips vertically, reliable and robust bonding technology is required because mechanical stress and thermal stress cause fracture during the bonding process. Cu pillar/solder ${\mu}$-bump bonding process is usually to interconnect TSV chips vertically although it has weak shape to mechanical stress and thermal stress. In this study, we suggest Insert-Bump (ISB) bonding process newly to stack TSV chips. Through experiments, we tried to find optimal bonding conditions such as bonding temperature and bonding pressure. After ISB bonding, we observed microstructure of bump joint by SEM and then evaluated properties of bump joint by die shear test.

Cu/Al 및 Fe/Al 층상복합재료 압출공정에서 구성재료의 불균일 변형 (Inhomogeneous Deformation Between Construction Materials in the Cu/Al and Fe/Al Co-extrusion Processes)

  • 서정민;노정훈;민경호;황병복;함경춘;장동환
    • 소성∙가공
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    • 제16권7호
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    • pp.530-537
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    • 2007
  • This paper is concerned with the analysis of plastic deformation of bimetal co-extrusion process. Two sets of material combination have been adopted for analysis, i.e. combinations of Cu/Al and Fe/Al. In the first set of material combination, the selected materials are AA 1100 aluminum alloy as hard material and CDA 110 as soft one. This type of material selection is to examine the effect of hard core and soft sleeve and vice versa on the deformation pattern in terms of plastic zone and velocity discontinuity along the contact surface between construction materials. Four different cases of co-extrusion process in terms of material combination and interference bonding were simulated to investigate the effect of material arrangement between core and sleeve, and of bonding on the plastic zones and velocity discontinuity. In the other set of material combination, model materials used as core and sleeve were AA 1100 and AISI 1010, which are relatively soft and hard, respectively. Process parameters except diameter ratio of core to sleeve material such as semi-die angle, reduction in area in global sense and die comer radius have been set constant throughout the simulation to concentrate our effort on the analysis of influence of diameter ratio on deformation behavior such as deformation zone, surface expansion, exit velocity discontinuity between composite materials, and extrusion forces.

The electronic structure of the ion-beam-mixed Pt-Cu alloys by XPS and XANES

  • Lim, K.Y.;Lee, Y.S.;Chung, Y.D.;Lee, K.M.;Jeon, Y.;Whang, C.N.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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    • pp.133-133
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    • 1998
  • In the thin film alloy formation of the transition metals ion-beam-mixing technique forms a metastable structure which cannot be found in the arc-melted metal alloys. Sppecifically it is well known that the studies about the electronic structure of ion-beam-mixed alloys pprovide the useful information in understanding the metastable structures in the metal alloy. We studied the electronic change in the ion-beam-mixed ppt-Ct alloys by XppS and XANES. These analysis tools pprovide us information about the charge transfer in the valence band of intermetallic bonding. The multi-layered films were depposited on the SiO2 substrate by the sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr. These compprise of 4 ppairs of ppt and Cu layers where thicknesses of each layer were varied in order to change the alloy compposition. Ion-beam-mixing pprocess was carried out with 80 keV Ae+ ions with a dose of $1.5\times$ 1016 Ar+/cm2 at room tempperature. The core and valence level energy shift in these system were investigated by x-ray pphotoelectron sppectroscoppy(XppS) pphotoelectrons were excited by monochromatized Al K a(1486.6 eV) The ppass energy of the hemisppherical analyzer was 23.5 eV. Core-level binding energies were calibrated with the Fermi level edge. ppt L3-edge and Cu K-edge XANES sppectra were measured with the flourescence mode detector at the 3C1 beam line of the ppLS (ppohang light source). By using the change of White line(WL) area of the each metal sites and the core level shift we can obtain the information about the electrons pparticippating in the intermetallic bonding of the ion-beam-mixed alloys.

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