• Journal of the Microelectronics and Packaging Society
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• v.22 no.2
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• pp.47-53
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• 2015

The effects of electroless nickel immersion gold (ENIG) and organic solderability preservative (OSP) surface finishes on the in-situ intermetallics reaction and the electromigration (EM) reliability of Sn-3.0Ag-0.5Cu (SAC305) solder bump were systematically investigated. After as-bonded, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) was formed at the interface of the ENIG surface finish at solder top side, while at the OSP surface finish at solder bottom side,$ Cu_6Sn_5$ and $Cu_3Sn$ IMCs were formed. Mean time to failure on SAC305 solder bump at $130^{\circ}C$ with a current density of $5.0{\times}10^3A/cm^2$ was 78.7 hrs. EM open failure was observed at bottom OSP surface finish by fast consumption of Cu atoms when electrons flow from bottom Cu substrate to solder. In-situ scanning electron microscope analysis showed that IMC growth rate of ENIG surface finish was much lower than that of the OSP surface finish. Therefore, EM reliability of ENIG surface finish was higher than that of OSP surface finish due to its superior barrier stability to IMC reaction.

• Korean Journal of Materials Research
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• v.14 no.1
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• pp.46-51
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• 2004

The annealing of a Cu(4.5at.% Mg)/$SiO_2$/Si structure in ambient $O_2$, at 10 mTorr, and $300-500^{\circ}C$, allows for the outdiffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned, and successfully served as a hard mask, for the subsequent dry etching of the underlying Mg-depleted Cu films using an $O_2$ plasma and hexafluoroacetylacetone [H(hfac)] chemistry. The resultant MgO/Cu structure, with a taper slope of about $30^{\circ}C$ shows the feasibility of the dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.% Mg) gate a-Si:H TFT has a field effect mobility of 0.86 $\textrm{cm}^2$/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films, which eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.

• Journal of the Korean Electrochemical Society
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• v.20 no.1
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• pp.1-6
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• 2017

This study investigated the effect of surface pretreatment, which removes native Cu oxides on Cu seed layer, on subsequent Cu electro-/electroless deposition in Cu interconnection. The native Cu oxides were removed by using citric acid-based solution frequently used in Cu chemical mechanical polishing process and the selective Cu oxide removal was successfully achieved by controlling the solution composition. The characterization of electro-/electrolessly deposited Cu films after the oxide removal was then performed in terms of film resistivity, surface roughness, etc. It was observed that the lowest film resistivity and surface roughness were obtained from the substrate whose native Cu oxides were selectively removed.

• Journal of the Korean institute of surface engineering
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• v.30 no.2
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• pp.111-120
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• 1997

The growth kinetion of $CuCl_x$ layer on Cu was investigated using $Cl_2$ gas with/without plasma. The etching kinetics ofit was also studied, in which PEt3 gas as well as $Cl_2$ gas were used. when plasma and DC bias were applied, not only the growth rate of $CuCl_x$ layer but also the surface concentration of Cl in $CuCl_x$ layer drastically increased. The growth mode is divided into three regimes, where the thinkness $CuCl_x$ layer ise proportional to t, lo9g $T^{1/2}$ , respectively, whether plasma, is applied or not. These three regime. It is also identified that the eath rate of Cu is drastically increased as the $Cl_2$ pressure is increased. However, when plasma and DC bias were applied, the etching rate is decreased, and ClCu-P-U layer is formed. in addition, as the etching time is increased, the surface concentration of Cl is increased and $CuCl_2$ formed partially.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.934-937
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. So we need the effect of the substituent group attached to the phthalocyanine on the surface potential was investigated by Kelvin probe method with varying temperature of the substrate. We were obtained the positive shift of the surface potential for CuPc thin film. We observed the electron displacement at the interface between Au electrode and CuPc layer and we were confirmed by the surface potential measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.492-493
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine(CuPc) based field-effect transistor with different metal electrode. So we need the effect of the substituent group attached to the phthalocyanine on the surface potential was investigated by Kelvin probe method with varying temperature of the substrate. We were obtained the positive shift of the surface potential for CuPc thin film. We observed the electron displacement at the interface between Au electrode and CuPc layer and we were confirmed by the surface potential measurement.

• Journal of Korean Society of Water and Wastewater
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• v.37 no.4
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• pp.177-186
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• 2023

Perfluorooctanoic acid(PFOA) was one of widely used per- and poly substances(PFAS) in the industrial field and its concentration in the surface and groundwater was found with relatively high concentration compared to other PFAS. Since various processes have been introduced to remove the PFOA, adsorption using GAC is well known as a useful and effective process in water and wastewater treatment. Surface modification for GAC was carried out using Cu and Fe to enhance the adsorption capacity and four different adsorbents, such as GAC-Cu, GAC-Fe, GAC-Cu(OH)₂, GAC-Fe(OH)₃ were prepared and compared with GAC. According to SEM-EDS, the increase of Cu or Fe was confirmed after surface modification and higher weight was observed for Cu and Fe hydroxide(GAC-Cu(OH)₂ and GAC-Fe(OH)₃, respectively). BET analysis showed that the surface modification reduced specific surface area and total pore volumes. The highest removal efficiency(71.4%) was obtained in GAC-Cu which is improved by 17.9% whereas the use of Fe showed lower removal efficiency compared to GAC. PFOA removal was decreased with increase of solution pH indicating electrostatic interaction governs at low pH and its effect was decreased when the point of zero charges(pzc) was negatively increased with an increase of pH. The enhanced removal of PFOA was clearly observed in solution pH 7, confirming the Cu in the surface of GAC plays a role on the PFOA adsorption. The maximum uptake was calculated as 257 and 345 ㎍/g for GAC and GAC-Cu using Langmuir isotherm. 40% and 80% of removal were accomplished within 1 h and 48 h. According to R², only the linear pseudo-second-order(pso) kinetic model showed 0.98 whereas the others obtained less than 0.870.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.13-17
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• 2009

A semi-empirical method to estimate the surface tension of molten alloys at different oxygen partial pressures is suggested in this study. The surface tension of molten Ag-Sn and Ag-Cu alloys were calculated using the Butler equation with the surface tension value of pure substance at a given oxygen partial pressure. The oxygen partial pressure ranges were $2.86{\times}10^{-12}$－$1.24{\times}10^{-9}$ Pa for the Ag-Sn system and $2.27{\times}10^{-11}$－$5.68{\times}10^{-4}$ Pa for the Ag-Cu system. In this calculation, the interactions of the adsorbed oxygen with other metallic constituents were ignored. The calculated results of the Ag-Sn alloys were in reasonable accordance with the experimental data within a difference of 8%. For the Ag-Cu alloy system at a higher oxygen partial pressure, the surface tension initially decreased but showed a minimum at $X_{Ag}$ = 0.05 to increase as the silver content increased. This behavior appears to be related to the oxygen adsorption and the corresponding surface segregation of the constituent with a lower surface tension. Nevertheless, the calculated results of the Ag-Cu alloys with the present model were in good agreement with the experimental data within a difference of 10%.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.45-49
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• 2006

The changes in the optical anisotropy of the clean Cu(110) and the oxygen covered Cu(110) surfaces due to Cu growth have been studied by reflectance difference spectroscopy(RDS). We have monitored the growth mode of Cu atoms on Cu(110) and Cu(110)-(2XlO surfaces at 250K and checked the surfactant effect of oxygen during the Cu growth. For Cu grow on Cu(110) and Cu(110)-(2Xl)O surface at low temperature, we observed evidence for the layer-by-layer growth mode with change of 4.25eV peak intensity.

• Korean Journal of Metals and Materials
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• v.48 no.1
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• pp.57-61
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• 2010

Nanosized surface structures of Cu powders were investigated at the atomic scale by field-emission transmission electron microscope techniques. The nanoscale surface oxide layer on the Cu powder was analyzed to be the $CU_2O$ phase by electron diffraction pattern and electron energy-loss spectroscopy. In addition, it was found from high-resolution transmission electron microscopy study that there are formed no surface oxide layers on the surface of alkanethiol coated Cu powders.