• 한국표면공학회지
• /
• 제34권5호
• /
• pp.475-480
• /
• 2001

Diffusion of Cu into the low-k para-xylene based plasma polymer (pXPP) thin films deposited by plasma-enhanced chemical vapor deposition using the para-xylene precursor was comparatively measured using various methods. Cu layer was deposited on the surfaces of pXPPs treated by $N_2$ plasma generated in a magnetically enhanced inductively coupled plasma reactor. Diffusion characteristics of Cu into pXPPs were measured using Rutherford backscattering spectroscopy (RBS), secondary ion mass spectroscopy (SIMS), cross-sectional transmission electron microscopy (XTEM), and current-voltage (I-V) measurements for the vacuum-annealed Cu/pXPPs for 1 hour at $450^{\circ}C$ and were compared. The results showed a correlation between the I-V measurement and SIMS data are correlated and have a sensitivity enough to evaluate the dielectric properties but the RBS or XTEM measurements are not sufficient to conclude the electrical properties of low-k dielectrics with Cu in the film bulk. The additional results indicate that the pXPP layers are quite resistant to Cu diffusion at the annealing temperature of $450^{\circ}C$ compared to the other previously reported organic low-k materials.

• Current Photovoltaic Research
• /
• 제3권1호
• /
• pp.27-31
• /
• 2015

It is known that sulfide at the $Cu(In,Ga)Se_2$ ($CIGSe_2$) surface plays a positive role in $CIGSe_2$ solar cells. We investigated the substitution of S with Se on the $CIGSe_2$ surface in S atmosphere. We observed that the sulfur content in the $CIGSe_2$ films changed according to sulfurization temperature and Cu/(In+Ga) ratio. The sulfur content in the $CIGSe_2$ films increased with increasing the annealing temperature and Cu/(In+Ga) ratio. Also Cu migration toward the surface increased at higher temperature. Since high Cu concentration at the $CIGSe_2$ surface is detrimental role, it is necessary to reduce the S annealing temperature as low as $200^{\circ}C$. The cell performance was improved at $200^{\circ}C$ sulfurization.

• Bulletin of the Korean Chemical Society
• /
• 제32권3호
• /
• pp.943-946
• /
• 2011

The electronic absorption and surface morphology evolution of two types of molecular double layer thin films, copper phthalocyanine (CuPc) layer deposited on chloro[subphthalocyaninato]boron(III) (SubPc) layer, denoted as SubPc/CuPc, and vice versa, with various thicknesses were investigated using ultraviolet (UV)-visible spectroscopy and atomic force microscopy (AFM). Both types of double layer structures showed similar broadened absorption patterns in the UV-visible region that were consistent with the fitted spectra following simple linear combination of the single layer absorption spectra of the two materials. In contrast, the surface morphology of double layer structures was dependent on the order of deposition. For the CuPc/SubPc structures, surface morphology was characterized by elongated grains, which are characteristic of SubPc thin films, indicating that the morphological influence of the underlying CuPc layer on the subsequent SubPc layer was not large. For the SubPc/CuPc structures, however, the underlying SubPc layer acted as a morphological template for the subsequently deposited CuPc layer. It was also observed that the grain size of the CuPc layer varied according to the thickness of the underlying SubPc layer.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.272.2-272.2
• /
• 2016

Copper-Tin (CuSn) thin films were synthsized by rf magnetron co-sputtering method with pure Cu and Sn metal targets with various rf powers and sputtering times. The obtained CuSn thin films were characterized by a surface profiler (alpha step), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), and contact angle measurement. The deposition rates were calculated by the thickness of CuSn thin films and sputtering times. We observed hexagonal Cu20Sn6 and cubic Cu39Sn11 phases from the films by XRD measurement. From the survey XPS spectra, the Cu and Sn main peaks were observed. Therefore, we could conclude CuSn thin films were successfully fabricated on the substrate in this study. The changes of oxidation states and chemical environment of the films were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. Surface free energy (SFE) and wettability of the CuSn thin films were studied with distilled water (DW) and ethylene glycol (EG) using the contact angle measurement. The total SFE of CuSn thin films decreased as rf power on Cu target increased. The contribution to the total SFE of dispersive SFE was relatively superior to polar SFE.

• 한국표면공학회지
• /
• 제26권3호
• /
• pp.149-157
• /
• 1993

In the study of TAB(Tape Automated Bonding)technologies, Cu-Cr sputtered seed layer has been used to improve the adhesion between Polyimide and Cu film and electrical properties. But the Cu electrodeposit on Cu-Cr film had poor adhesion or powder-like form due to the surface Cr oxides on the Cu-Cr film. By means of activating the Cu-Cr film with the oxalic acid and phosphoric acid, the Cu film with the improved adhesion could be coated on the Cu-Cr sputtered film in CuSO4 solution. The etching rate was compared with increasing the Cr content of the sputtered Cu-Cr film, and anodic polarization curve in FeCl3 solution was investigated. With increasing the Cr content, the etching rate was reduced. The clean etching cross section could be obtained with increasing the concentration of FeCl3 solution. But above the 13 w/o Cr content, Cu-Cr sputtered film could not bed etched cleanly only with FeCl3 solution and additives were needed.

• 한국표면공학회지
• /
• 제45권1호
• /
• pp.8-14
• /
• 2012

The effects of the alkali surface modification process on the adhesion strength between electroless-plated Cu and polyimide films were investigated. The polyimide surfaces were effectively modified by alkali surface treatments from the hydrophobic to the hydrophilic states, and it was confirmed by the results of the contact angle measurement. The surface roughness increased by alkali surface treatments and the adhesion strength was proportional to the surface roughness. The adhesion strength of Cu/polyimide interface treated by KOH + EDA (Ethylenediamine) was 874 gf/cm which is better than that treated by KOH and KOH + $KMnO_4$. The results of XPS spectra revealed that the alkali treatment formed oxygen functional groups such as carboxyl and amide groups on the polyimide films which is closely related to the interfacial bonding mechanism between electroless-plated Cu and polyimide films. It could be suggested that the species and contents of functional group on polyimide films, surface roughness and contact angle were related with the adhesion strength of Cu/polyimide in combination.

• Nuclear Engineering and Technology
• /
• 제25권4호
• /
• pp.507-514
• /
• 1993

Titanium재료는 해수에서 좋은 내식성을 가지는 이유로 최근 원자력발전소 복수기에 사용되고 있다. 그러나, Ti이 tubesheet재 료인 Cu 합금에 접하고 이것이 water box 재료인 탄소강에 접하게될 경우 접촉금속에 심한 galvanic corrosion이 일어나게 된다. 전기화학적 실험에 의하면, 탄소강이 해수속에서 Ti나 Cu에 접할 때 탄소강의 부식속도는 증가할 것이며, Cu가 Ti에 해수중에서 장기간 접촉할 경우에는 Cu의 부식속도는 증가할 것으로 생각된다, 또한 표면적비, R$_1$(surface area of carbon steel/surface area of Ti).와 R$_2$(surface area of carbon steel/surface area of Cu)가 탄소강의 galvanic corrosion에 매우 중요하며. Water box 재료인 탄소강의 부식속도를 최소화하기 위해서는 이들 표면적비가 낮게 유지되어서는 안될 것이라고 생각된다 침지 galvanic 부식 시험결과 surface area of Fe/surface area of Al Brass값이 1일때 탄소강의 부식속도는 4.4mpy 이었으나 이 비가 $10^{-2}$ 일때는 570mpy이었다. 이렇게 연결된 galvanic시편에 Ti tube를 연결한 경우에는 이 비가 1일때 탄소강의 부식율이 4.4mpy에서 13mpy로 증가하였다. 이는 R$_1$가 R$_2$가 분극곡선에 복합적인 영향을 미치는것으로 설명할 수 있다.

• 소성∙가공
• /
• 제18권4호
• /
• pp.342-346
• /
• 2009

Forming characteristics for the bundle extrusion of Cu-Ti bimetal wires are investigated, which can identify the process conditions for weak mechanical bonding at the contact surface during the direct extrusion of a Cu-Ti bimetal wire bundle. Bonding mechanism between Cu and Ti is assumed as a cold pressure welding. Then, the plastic deformation at the contact zone causes mechanical bonding and a new bonding criterion for pressure welding is developed as a function of the principal stretch ratio and normal pressure at the contact surface by analyzing micro local extrusion at the contact zone. The averaged deformation behavior of Cu-Ti bimetal wire is adopted as a constitutive behavior at a material point in the finite element analysis of Cu-Ti wire bundle extrusion. Various process conditions for bundle extrusions are examined. The deformation histories at the three points, near the surface, in the middle and near the center, in the cross section of a bundle are traced and the proposed new bonding criterion is applied to predict whether the mechanical bonding at the Cu-Ti contact surface happens. Finally, a process map for the direct extrusion of Cu-Ti bimetal wire bundle is proposed.

• 한국분말재료학회지
• /
• 제19권3호
• /
• pp.177-181
• /
• 2012

Copper composite materials have attracted wide attention for energy applications. Especially $CuInS_2$ has a desirable direct band gap of 1.5 eV, which is well matched with the solar spectrum. $CuInS_2$ nanoparticles could make it possible to develop color-tunable $CuInS_2$ nanoparticle emitter in the near-infrared region (NIR) for energy application and bio imaging sensors. In this paper, $CuInS_2$ nanoparticles were successfully synthesized by thermo-decomposition methods. Surface modification of $CuInS_2$ nanoparticles were carried out with various semiconductor materials (CdS, ZnS) for enhanced optical properties. Surface modification and silica coating of hydrophobic nanoparticles could be dispersed in polar solvent for potential applications. Their optical properties were characterized by UV-vis spectroscopy and photoluminescence spectroscopy (PL). The structures of silica coated $CuInS_2$ were observed by transmission electron microscopy (TEM).

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2013년도 춘계학술대회 논문집
• /
• pp.140-140
• /
• 2013

3차원 실장을 위한 TSV의 제조 공정 중에 발생할 수 있는 Cu의 돌출 거동에 대해 연구하였다. Cu의 돌출은 반도체를 제조할 때 고온(>$350^{\circ}C$) 공정인 BEOL (back end of line) 중에 발생하는 현상이다. Cu의 돌출은 Si과 Cu의 열팽창계수 차이에 의해 발생하는 현상으로 고온 공정 뿐만아니라 열충격 시험과 같은 열피로에 의해서 발생할 수 있다. 따라서 본 연구에서는 $-65^{\circ}C$에서 15분과 $150^{\circ}C$에서 15분을 1 사이클로 설정하여 0, 250, 500, 1000 사이클의 열충격 시험을 수행하였다. 열충격 시험 후 각 사이클에서의 Cu 돌출 거동과 Cu의 표면 거칠기 변화에 대해 연구하였다.