• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.49-49
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• 2009

• 한국초전도학회:학술대회논문집
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• v.12
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• pp.4-4
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• 2002

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.87-89
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• 2003

YBa$_2$Cu$_3$$O_{7-x}$ thin films were fabricated by MOD-TFA process via dipping method on LaAlO$_3$(LAO) single crystalline substrates. In this study, we investigated effect of solvent on the microstructure and crystallinity of YBCO thin films. The YBCO films derived from solvent with low boiling point has good surface morphologies.s.

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.57-57
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• 2005

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.48-48
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• 2005

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1088-1092
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• 1995

In this paper, we evaluated the sputter-deposited Cr/Cu thin film fuses on $Al_2O_3$ substrates by the adhesive, breaking and repetitive over-current test as a function of temperature on them. Each Cr and Cu was deposited $1700{\pm}300{\AA},\;3700{\pm}300{\AA}$ using RF sputtering unit. The electroplated Cu of $25{\mu}m$ thickness was added in order to make sensitive thin film fuse of the normal current 15[A]. The adhesive strength and the number of repetition were Increasing and then decreasing with the temperature. The maximum adhesive strength of over $9kgf/9mm^2$ was obtained at $400^{\circ}C$. In the breaking test, the post-arc time characteristic was better than any other factor.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.717-720
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• 1992

Since the discovery of High-Tc superconducting Y-Ba-Cu-O ceramics with critical temperature of about 90K, numerous efforts to prepare supercond ucting thin films with excellent qualities such as High-Tc and critical current density have been made. The samples were deposited onto $SiO_x$ substrates heated at 540$^{\circ}C$ - 600$^{\circ}C$ in a single target rf - magnetron sputtering system. The film thickness has 2000$\AA$ - 5000 $\AA$ with a rate of 16 $\AA$/min. and distance between target and substrate was 50 mm. The films were characterized by X - ray diffraction, scanning electron microscopy and critical temperature.

• Journal of Powder Materials
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• v.22 no.2
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• pp.134-137
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• 2015

The monolayer engineering diamond particles are aligned on the oxygen free Cu plates with electroless Ni plating layer. The mean diamond particle sizes of 15, 23 and $50{\mu}m$ are used as thermal conductivity pathway for fabricating metal/carbon multi-layer composite material systems. Interconnected void structure of irregular shaped diamond particles allow dense electroless Ni plating layer on Cu plate and fixing them with 37-43% Ni thickness of their mean diameter. The thermal conductivity decrease with increasing measurement temperature up to $150^{\circ}C$ in all diamond size conditions. When the diamond particle size is increased from $15{\mu}m$ to $50{\mu}m$ (Max. 304 W/mK at room temperature) tended to increase thermal conductivity, because the volume fraction of diamond is increased inside plating layer.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.475-480
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• 2002

The reliability of the solder joint is affected by type and extent of the interfacial reaction between solder and substrates. Therefore, understanding of intermetallic compounds produced by soldering in electronic packaging is essential. In-based alloys have been favored bonding devices that demand low soldering temperatures. For photonic and fiber optics packaging, m-based solders have become increasingly attractive as a soldering material candidate due to its ductility. In the present work, the interfacial reactions between indium solder and bare Cu Substrate are investigated. For the identification of intermetallic compounds, both Scanning Electron Microscopy(SEM) and X-Ray Diffraction(XRD) were employed. Experimental results showed that the intermetallic compounds, such as Cu$_{11}$In$_{9}$ was observed for bare Cu substrate. Additionally, the growth rate of these intermetallic compounds was increased with the reaction temperature and time. We found that the growth of the intermetallic compound follows the parabolic law, which indicates that the growth is diffusion-controlled.d.

• ETRI Journal
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• v.18 no.4
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• pp.339-346
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• 1997

Good quality a-axis oriented thin films of $YBa_2Cu_3O_{7-x}$ may be grown by the use of a $PrBa_2Cu_3O_{7-x}$ (PBCO) layer as a template. Here we present a detailed study of the nucleation of the PBCO layer, explaining the orientations observed. It is determined that the wavy surface of a $LaSrGaO_4$ (LSGO) (100) substrate consists of the {101} planes by observing cross-sectional transmission electron microscopy images of the interface between the PBCO film and the substrate. The images and selected area diffraction patterns show that a mixed c-and b-axis oriented PBCO layer was initially grown on the substrate, followed by pure b-axis oriented PBCO growth. We explain that the c-axis oriented growth is the result of the growth of the PBCO (019) planes on the LSGO (101) planes. We conclude that the nucleation and growth of the PBCO films at the initial stages depends on the crystallographic plane of the substrate surfaces, however, as the film grows further, the kinetics of the deposition process favors b-axis oriented growth.