The Study on a sensitive current limiting breaking device using RF Sputtering

RF Sputtering을 이용한 전류 민감성 차단 디바이스에 관한 연구

In this paper, we evaluated the sputter-deposited Cr/Cu thin film fuses on $Al_2O_3$ substrates by the adhesive, breaking and repetitive over-current test as a function of temperature on them. Each Cr and Cu was deposited $1700{\pm}300{\AA},\;3700{\pm}300{\AA}$ using RF sputtering unit. The electroplated Cu of $25{\mu}m$ thickness was added in order to make sensitive thin film fuse of the normal current 15[A]. The adhesive strength and the number of repetition were Increasing and then decreasing with the temperature. The maximum adhesive strength of over $9kgf/9mm^2$ was obtained at $400^{\circ}C$. In the breaking test, the post-arc time characteristic was better than any other factor.