• Journal of Powder Materials
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• v.29 no.3
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• pp.226-232
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• 2022

In this study, a new manufacturing process for a multilayer-clad electrical contact material is suggested. A thin and dense BCuP-5 (Cu-15Ag-5P filler metal) coating layer is fabricated on a Ag plate using a high-velocity oxygen-fuel (HVOF) process. Subsequently, the microstructure and bonding properties of the HVOF BCuP-5 coating layer are evaluated. The thickness of the HVOF BCuP-5 coating layer is determined as 34.8 ㎛, and the surface fluctuation is measured as approximately 3.2 ㎛. The microstructure of the coating layer is composed of Cu, Ag, and Cu-Ag-Cu3P ternary eutectic phases, similar to the initial BCuP-5 powder feedstock. The average hardness of the coating layer is 154.6 HV, which is confirmed to be higher than that of the conventional BCuP-5 alloy. The pull-off strength of the Ag/BCup-5 layer is determined as 21.6 MPa. Thus, the possibility of manufacturing a multilayer-clad electrical contact material using the HVOF process is also discussed.

• Journal of Environmental Science International
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• v.8 no.6
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• pp.705-710
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• 1999

The fundamental experiments on the phosphorus removal from water were carried out by the batch and continuous reactors which used aluminium and copper plate. In this systems, the phosphorus was removed by aluminium ion generated with the electrochemical interaction (pitting corrosion) of aluminium and copper. In the batch experiments, the efficiencies of phosphorus removal increased when the surfaces of aluminium and copper plate were brushed. The phosphorus removal by aluminium ion was affected the copper plate and NaCI in this system. The optimal pH values were 5 and 6 for the phosphorus removal. The efficiency of phosphorus removal increased with increasing NaCI concentration, surface area of aluminium and copper plate. The $CUSO_4{\cdot}5H_2O$ instead of copper plate could be used as Cu source. The effluent $PO_4-P$ concentration as low as 2 $mg/{\ell}$ could have been obtained during the continuous experiment at HRT of 48 hrs.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2007.05a
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• pp.165-166
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• 2007

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.475-480
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• 2001

Glasses in he system CuO-P$_2$O$_{5}$ -Nb$_2$O$_{5}$ -Nb$_2$O$_{5}$ -V$_2$O$_{5}$ were prepared by a press-quenching method on the copper plate. the glass-ceramics from these glasses were obtained by post-heat treatment, and the crystallization behavior and DC conductivities were determined. The conductivities of the glasses were range from 10$^{-6}$ s.$cm^{-1}$ / at room temperature ,but the conductivities of the glass-ceramics were 10$^{-3}$ s.$cm^{-1}$ / increased by 10$^3$ order. The crystalline product in the glass-ceramics was CuV$_2$O$_{6}$ . the crystal growth of CuV$_2$O$_{6}$ phase increased with heat-treatment conditions. The linear relationship between il($\sigma$T) and T$^{-1}$ suggested that the electrical conduction in the present glass-ceramics would be due to a small polaron hopping(SPH) mechanism.

• Progress in Superconductivity
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• v.6 no.1
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• pp.84-88
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• 2004

The polycrystalline superconductor $SmBa_2$$Cu_3$$O_{x}$ is fabricated, and intergranular magnetic properties are investigated using the critical state model, from which some useful parameters such as the critical current density and the intergranular volume fraction are obtained. The curve fitting for M-H hysteresis loop shows that the intergranular critical current density of $SmBa_2$$Cu_3$$O_{x}$ / decreases in the form of ($1-T/T_{c}$ )$^{1.5}$ . The intergranular volume fraction is influenced by granular morphology. From SEM image, the grains of $SmBa_2$$Cu_3$$O_{x}$ are found to be randomly shaped. This mean:; that the intergranular volume fraction of $SmBa_2$$Cu_3$$O_{x}$ / should be smaller than those of superconductors, of which grains are plate-shaped such as Tl-based superconductor.

• Journal of the Korean Ceramic Society
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• v.26 no.1
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• pp.59-66
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• 1989

Single crystals of the superconducting Y-Ba-Cu oxide were grown by a flux technique. Stoichiometric mixture with excess BaO and CuOcontent was melted at 130$0^{\circ}C$, followed by fast cooling to 108$0^{\circ}C$ to prevent crystallizing of CuO. It was then reheated to 110$0^{\circ}C$ followed by being held at this temperature to control the number of nuclei, and cooled by 5$^{\circ}C$/hr to 80$0^{\circ}C$. This procedure was repeated with various compositions and crystals were obtained in cavity. Molten solution was seperated to two parts : the upper part of almost CuO and the rest of different composition. Appropriate composition of flux was 30mol% BaO and 70mol% CuO due to the seperation of molten solution. Single crystals have the habit of thin plate with good developed (001) crystal face, XRD, EDAX and single crystal X-ray investigations were carried out. The grown crystals have tetragonal structure with the lattice parameters a=b=3.84$\AA$, c=11.7$\AA$, and the space group P4/mmm. The crystal surface were observed by SEM.

• Korean Journal of Materials Research
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• v.19 no.6
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• pp.344-348
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• 2009

The electrolyte effects of the electroplating solution in Cu films grown by ElectroPlating Deposition(EPD) were investigated. The electroplated Cu films were deposited on the Cu(20 nm)/Ti (20 nm)/p-type Si(100) substrate. Potentiostatic electrodeposition was carried out using three terminal methods: 1) an Ag/AgCl reference electrode, 2) a platinum plate as a counter electrode, and 3) a seed layer as a working electrode. In this study, we changed the concentration of a plating electrolyte that was composed of $CuSO_4$, $H_2SO_4$ and HCl. The resistivity was measured with a four-point probe and the material properties were investigated by using XRD(X-ray Diffraction), an AFM(Atomic Force Microscope), a FE-SEM(Field Emission Scanning Electron Microscope) and an XPS(X-ray Photoelectron Spectroscopy). From the results, we concluded that the increase of the concentration of electrolytes led to the increase of the film density and the decrease of the electrical resistivity of the electroplated Cu film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.934-937
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• 2003

Glasses in the system $CuO-P_2O_5-V_2O_5$ were prepared by a press-quenching method on the copper plate. The glass-ceramics from these glasses were obtained by post-heat treatment, and the crystallization behavior and DC conductivities were determined. The conductivities of the glasses were range from $10^{-6}s.Cm^{-1}$ at room temperature, but the conductivities of the glass-ceramics were $10^{-3}s.Cm^{-1}$ increased by $10^3$ order. The crystalline product in the glass-ceramics was $CuV_2O_6$. Heat-treatment conditions influenced the crystal growth of $CuV_2O_6$ and conductivity. The linear relationship between in (${\sigma}T$) and $T^{-1}$ suggested that the electrical conduction in the present glass-ceramics would be due to a small polaron hopping(SPH) mechanism.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.207-212
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• 2021

The mechanical and electrical characteristics can be improved in 3D stacked IC technology which can accomplish the ultra-high integration by stacking more semiconductor chips within the limited package area through the Cu direct bonding method minimizing the performance degradation to the bonding surface to the inorganic compound or the oxide film etc. The surface was treated in a ultrasonic washer using a diamond abrasive to remove other component substances from the prepared cast plate substrate surface. FE-SEM was used to analyze the bonding characteristics of the bonded copper substrates, and the cross section of the bonded Cu conjugates at the sintering junction temperature of 100 ℃, 150 ℃, 200 ℃, 350 ℃ and the pressure of 2303 N/cm² and 3087 N/cm². At 2303 N/cm², the good bonding of copper substrate was confirmed at 350 ℃, and at the increased pressure of 3087 N/cm², the bonding condition of Cu was confirmed at low temperature junction temperature of 200 ℃. However, the recrystallization of Cu particles was observed due to increased pressure of 3087 N/cm² and diffusion of Cu atoms at high temperature of 350 ℃, which can lead to degradation in semiconductor manufacturing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.6
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• pp.237-243
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• 2020

In this study, a silane-based coating was applied to improve corrosion resistance and thermal efficiency performance of a brazed plate heat exchanger (BPHE) composed of stainless plate and copper (Cu) brazing. Although the selected coating material was applied to the BPHE by evaluating the corrosion and contact angle according to the coating material, the result of the heat transfer performance evaluation showed that the thermal efficiency was lower than that of the uncoated BPHE. It was analyzed that the adhesion of the coating agent to the flow path inside the BPHE and the residual coating agent on the surface acted as heat resistance, preventing heat transfer. This is due to the structural characteristics of the BPHE in which a fine flow path exists inside, and it is believed that manufacturing after coating the surface of the flow path in advance in the manufacturing process of the BPHE can improve heat transfer performance.