• Title/Summary/Keyword: Cu photo-doping

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Study on visible emission of Cu-ion-doped perovskite hafnate in view of excitation energy dependence

  • Lee, D.J.;Lee, Y.S.;Noh, H.J.
    • Progress in Superconductivity and Cryogenics
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    • v.17 no.4
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    • pp.8-11
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    • 2015
  • We studied on the visible emission of Cu-ion-doped perovskite hafnate $SrHfO_3$ (SHO:Cu) with the photo-excitation energy dependence. The polycrystalline SHO:Cu samples were newly synthesized in the solid state reaction method. From the X-ray diffraction measurement it was found that the crystalline structure of SHO:Cu is nearly identical to that of undoped $SrHfO_3$. Interestingly, the photoluminescence excitation (PLE) spectra change significantly with the emission energy, which is linked to the strong dependence of the visible emission on the photo-excitation energy. This unusual emission behavior is likely to be associated with the mixed valence states of the doped Cu ions, which were revealed by X-ray photoelectron spectroscopy. We compared our finding of tunable visible emission in the SHO:Cu compounds with the cases of similar materials, $SrTiO_3$ and $SrZrO_3$ with Cu-ion-doping.

Development of Inorganic Metal Oxide based Hole-Transporting Layer for High Efficiency Perovskite Solar Cell (고효율 페로브스카이트 태양전지용 무기 금속 산화물 기반 정공수송층의 개발)

  • Lee, Haram;Mai, Cuc Thi Kim;Jang, Yoon Hee;Lee, Doh-Kwon
    • Current Photovoltaic Research
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    • v.8 no.2
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    • pp.60-65
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    • 2020
  • In perovskite solar cells with planar heterojunction configuration, selection of proper charge-transporting layers is very important to achieve stable and efficient device. Here, we developed solution processible Cu doped NiOx (Cu:NiOx) thin film as a hole-transporting layer (HTL) in p-i-n structured methylammonium lead trihalide (MAPbI3) perovskite solar cell. The transmittance and thickness of NiOx HTL is optimized by control the spin-coating rate and Cu is additionally doped to improve the surface morphology of undoped NiOx thin film and hole-extraction properties. Consequently, a perovskite solar cell containing Cu:NiOx HTL with optimal doping ratio of Cu exhibits a power conversion efficiency of 14.6%.

Cu-doped Programmable Metallization Cell의 스위칭 특성 연구

  • Nam, Gi-Hyeon;Jeong, Hong-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.57-57
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    • 2009
  • Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. We investigated the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of PMC. We were able to do more economical approach by using copper which play an electrolyte ions role. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

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Optical Properties of ZnS:Mn,Cu,Cl Phosphor for Inorganic ELD (무기 ELD용 ZnS:Mn,Cu,Cl 형광체의 광학적 특성 연구)

  • Lee, Hak-Soo;Gwak, Ji-Hye;Han, Sang-Do;Han, Chi-Hwan;Kim, Jung-Duk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.424-425
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    • 2006
  • Zinc sulfide is a well-known host material of phosphor emitting different radiations dependent on different doping impurities of metallic ion. It emits green, blue, orange-yellow or white colors by doping with activators such as copper, silver, manganese and so on. In this study, manganese, copper and chlorine doped ZnS phosphor (ZnS:Mn,Cu,Cl) was synthesized by solid-state reaction method. The optical properties were investigated according to different concentrations of sulfur and activators used during the synthesis process.

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Photoinduced anisotropy in the Ag and Cu photodoped chalcogenide As-Ge-Se-S thin films (칼코게나이드 As-Ge-Se-S 박막에서 Ag와 Cu 광도핑에 의한 광유기 이방성)

  • 박종화;장선주;박정일;이영종;정홍배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.535-538
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    • 2000
  • We have investigated the photoinduced anisotropy in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin films, non-doped and photodoped by Ag and Cu. The films were exposed by the linearly polarized He-Ne laser light( $\lambda$=632.8nm). The Ag and Cu photodoping resulted in reducing the time of saturation photoinduced linearly dichroism. Also photoinduced linearly dichroism was increased up to maximum 184% by Ag photodoping and 138% by Cu photodoping, respectively. As the result of this study, the linearly dichroism can be interesting for different applications of photoinduced anisotropy. In addition, it will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.

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Characteristics research of Cu-doped Programmable Metallization Cell (Cu를 도핑시킨 Programmable Metallization Cell의 특성연구)

  • Nam, Ki-Hyun;Ju, Long-Yun;Chung, Hong-Bay
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1289-1290
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    • 2008
  • Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. In this study, we investigate the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do more economical approach by using copper which play an electrolyte ions role. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

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Cu-doped Ge-Se 박막의 스위칭 특성

  • Nam, Gi-Hyeon;Jeong, Won-Guk;Jeong, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.157-157
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    • 2010
  • Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. PMC components of Ge-Se doped with Ag ions were studied with help of the previous studies and copper was used for metallic ions taking into account of economy of components. In this study, we investigated the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do more economical approach by using copper which play role of electrolyte ions. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

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Solid Electrolytes Characteristics Based on Cu-Ge-Se for Analysis of Programmable Metallization Cell

  • Nam, Ki-Hyun;Chung, Hong-Bay
    • Transactions on Electrical and Electronic Materials
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    • v.9 no.6
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    • pp.227-230
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    • 2008
  • Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of electrical nanoscale pathways in thin films of solid electrolytes. In this study, we investigated the nature of thin films formed by the photo doping of copper ions into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ions transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

Chalcogenide 기반 메모리 소자의 스위칭 특성 향상을 위한 광학패턴 형성

  • Park, Ju-Hyeon;Han, Chang-Jo;Gang, Ji-Su;Lee, Dal-Hyeon;Nam, Gi-Hyeon;Jeong, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.185-185
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    • 2010
  • Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of electrical nanoscale pathways in thin films of solid electrolytes. In this study, we investigated the nature of thin films formed by the photo doping of copper ions into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ions transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

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