• 한국진공학회지
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• 제9권3호
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• pp.267-272
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• 2000

electroplating(EP)법을 이용하여 ULSI용 Cu 박막을 제조하였다. seed Cu는 sputtering으로 증착하였으며, 확산방지막으로 TaN를 사용하였다. 제작된 EP Cu 박막은 seed Cu의 영향으로 열처리 조건에 관계없이 Cu(111)방향으로 강하게 우선 배향 하였다. 열처리 온도와 시간이 증가함에 따라 Cu박막의 미세조직이 non-columnar structure에서 약 2배 이상 결정립 성장하여 columnar structure로 바뀌었으며, 또한 as-deposit시 관찰되었던 stacking fault, twin, dislocation들이 상당히 줄어드는 것이 관찰되었다. Cu의 확산에 의하여 생기는 copper-silicide는 관찰할 수 없었으며, 이것은 두께 45nm의 TaN막이 $450^{\circ}C$, 30분 열처리시 확산방지막으로 충분한 역할을 한 것으로 판단된다. Cu(111)우선 배향과 열처리에 의한 결정립 성장 및 defect감소는 Cu 박막의 결정립계에서 발생하는 electromigration 현상을 상당히 줄일 수 있을 것으로 판단된다.

• 한국재료학회지
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• 제11권9호
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• pp.802-809
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• 2001

Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2006년도 춘계 학술대회 개요집
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• pp.218-220
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• 2006

Sn-3.0Ag-0.5Cu solder is widely used as micro-joining materials of flip chip package(FCP) because of the fact that it causes less dissolution and has good thermal fatigue property. However, compared with ternary electroplating in the manufacturing process, binary electroplating is still used in industrial field because of easy to make plating solution and composition control. The objective of this research is to fabricate Sn-3.0Ag-0.5Cu solder bumping having accurate composition. The ternary Sn-3.0Ag-0.5Cu solder bumping could be made on a Cu pad by sequent binary electroplating of Sn-Cu and Sn-Ag. Composition of the solder was estimated by EDS and ICP-OES. The thickness of the bump was measured using SEM and the microstructure of intermetallic-compounds(IMCs) was observed by SEM and EDS. From the results, contents of Ag and CU found to be at $2.7{\pm}0.3wt%\;and\;0.4{\pm}0.1wt%$, respectively.

• 한국재료학회지
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• 제12권3호
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• pp.225-230
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• 2002

Sn was selected as an alloying element of Cu. The Cu-Sn thin layers were deposited on the Si substrates by the electroplating method and their properties were studied. By rapidly thermal annealing(RTA) up to 40$0^{\circ}C$ after electroplating, sheet resistance decreased and adhesion strength increased, but that trend was reversed at the 50$0^{\circ}C$ RTA. Cu-Sn particles grew dense and the surface was uniform up to 40$0^{\circ}C$, but at 50$0^{\circ}C$, empty area was introduced and the surface became rough owing to oxidation and particle coarsening and agglomeration. Deposited layer contained significant amount of Si, while pure Cu-Sn layer with the composition ratio of 90:10 was present only on the top surface. However, no significant change in the Cu composition within alloy layers occured by the RTA regardless of its temperature. This indicates that the Cu diffusion into the Si was suppressed by the presence of Sn.

• 마이크로전자및패키징학회지
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• 제7권4호
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• pp.23-29
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• 2000

사용되는 metal구분 없이 반도체 공정장비들을 사용함으로써 cross-contamination을 유발시킬 수 있다. 특히, copper(Cu)는 확산이 쉽게 되어 cross-contamination에 의해 수 ppm정도가 wafer에 오염되더라도 트랜지스터의 leakage current발생 요인으로 작용할 수 있기 때문에 Si-IC성능에 치명적인 영향을 미칠 수 있는데, Si-LSI 실험실에서 할 수 있는 공정과 Si-LSI 실험실을 나와 할 수 있는 공정으로 구분하여 최대한 Si-LSI 장비를 공유함으로써 최소한의 장비로 Cu cross-contamination문제를 해결할 수 있다. 즉, 전기도금을 할 때 전극으로 사용되어지는 TiW/Al sputtering, photoresist (PR) coating, solder bump형성을 위한 via형성까지는 Si-LSI 실험실에서 하고, 독립적인 다른 실험실에서 Cu-seed sputtering, solder 전기도금, 전극 etching, reflow공정을 하면 된다. 두꺼운 PR을 얻기 위하여 PR을 수회 도포(multiple coaling) 하고, 유기산 주석과 유기산 연의 비를 정확히 액 조성함으로서 Sn:Pb의 조성비가 6 : 4인 solder bump를 얻을 수 있었다. solder를 도금하기 전에 저속 도금으로 Cu를 도금하여, PR 표면의 Cu/Ti seed층을 via와 PR표면과의 저항 차를 이용하여 PR표면의 Cu-seed를 Cu도금 중에 etching 시킬 수 있다. 이러한 현상을 이용하여 선택적으로 via만 Cu를 도금하고 Ti층을 etching한 후, solder를 도금함으로써 저 비용으로 folder bump 높이가 60 $\mu\textrm{m}$ 이상 높고, 고 균일/고 밀도의 solder bump를 형성시킬 수 있었다.

• 한국수소및신에너지학회논문집
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• 제34권6호
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• pp.785-791
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• 2023

Copper sulfide (Cu_xS) has been extensively utilized as a counter electrode (CE) material for quantum dot solar cells (QDSCs) due to its exceptional catalytic activity for polysulfide electrolytes. The typical fabrication method of Cu₂S CEs based on brass substrate is dangerous, involving the use of a highly concentrated hydrochloric acid solution in a relatively high temperature. In contrast, electroplating presents a safer alternative by employing a less acidic solution at a room temperature. In addition, the electroplating method increases the probability of obtaining CEs of consistent quality compared to the brass method. In this study, the optimized electroplating cycle for CuS CEs in QDSCs has been studied for the highly efficient photovoltaic performances. The QDSCs, featuring electroplated CuS CEs, achieved an impressive efficiency of 7.18%, surpassing the conventional method employing brass CEs, which yielded an efficiency of 6.62%.

• 한국표면공학회지
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• 제36권2호
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• pp.194-199
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• 2003

Polarization measurements were peformed to investigate the electrochemical behavior of copper ions and limiting current density in waste rinse water from copper electroplating processes. A newly designed cyclone type electrolyzer was tested to recover the copper powder. Synthetic solutions were prepared using analytical grade $CuSO_4$ to the desired waste water concentration and pH was adjusted with $H_2$$SO_4$. Electrowinning was peformed at room temperature and the solution was cycled with a pump. Results showed that more than 99 percent of Cu was recovered and the size of the recovered Cu powder ranges from 0.1 - $0.5\mu\textrm{m}$. The chemical composition of the Cu powder mainly consists of $Cu_2$O and Cu and can be easily reduced to pure Cu powder.

• Design & Manufacturing
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• 제6권1호
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• pp.95-100
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• 2012

In this study, a novel Cu composite sheet with embedded high electric conduction path was developed as another alternative for the interconnect materials possessing high electrical conductivity as well as high strength. The Cu composite sheet was fabricated by forming Ag conduction paths not within the interior but on the surface of a high strength Cu substrate by damascene electroplating process. As a result, the electrical conductivity increased by 40% thanks to mesh type Ag conduction paths, while the ultimate tensile strength decreased by 20%. The interfacial fracture resistance of Cu composite sheet prepared by damascene electroplating increased by above 50 times compared to Cu composite sheet by conventional electroplating. For feasibility test for practical application, a leadframe for LED module was manufactured by a progressive blanking and piercing processes, and the blanked surface profile was evaluated as a function of the volume fraction of Ag conduction paths. As Ag conduction path became finer, pressing formability improved.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2007년 추계학술발표대회 개요집
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• pp.235-237
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• 2007

In this paper, fabrication of Sn-3.0Ag-0.5Cu solder bumping having accurate composition and behavior of intermetallic compounds(IMCs) growth at interface between Sn-Ag-Cu bumps and Cu substrate were studied. The ternary alloy of the Sn-3.0Ag-0.5Cu solder was made by two binary(Sn-Cu, Sn-Ag) electroplating on Cu pad. For the manufacturing of the micro-bumps, photo-lithography and reflow process were carried out. After reflow process, the micro-bumps were aged at $150^{\circ}C$ during 1 hr to 500 hrs to observe behavior of IMCs growth at interface. As a different of Cu contents(0.5 or 2wt%) at Sn-Cu layer, behavior of IMCs was estimated. The interface were observed by FE-SEM and TEM for estimating of their each IMCs volume ratio and crystallographic-structure, respectively. From the results, it was found that the thickness of $Cu_3Sn$ layer formed at Sn-2.0Cu was thinner than the thickness of that layer be formed Sn-0.5Cu. After aging treatment $Cu_3Sn$ was formed at Sn-0.5Cu layer far thinner.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 춘계학술대회
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• pp.250-253
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• 2007

An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. The Ni contact was formed on the front grid pattern by electroless plating followed by anneal ing at $380{\sim}400^{\circ}C$ for $15{\sim}30$ min at $N_{2}$ gas to allow formation of a nickel-silicide in a tube furnace or a rapid thermal processing(RTP) chamber because nickel is transformed to NiSi at $380{\sim}400^{\circ}C$. The Ni plating solution is composed of a mixture of $NiCl_{2}$ as a main nickel source. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. The Ni/Cu contact was found to be well suited for high-efficiency solar cells and was successfully formed by using electroless plating and electroplating, which are more cost effective than vacuum evaporation. In this paper, we investigated low-cost Ni/Cu contact formation by electroless and electroplating for crystalline silicon solar cells.