• Title/Summary/Keyword: Cu electroplating

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Effect of Horizontal Pitch-to-Diameter Ratio on the Natural-Convection Heat Transfer of Two Staggered Cylinders (엇갈리게 배열된 두 개의 수평관에서 수평 피치-직경비에 따른 자연대류 열전달 영향)

  • Chae, Myeong-Seon;Heo, Jeong-Hwan;Chung, Bum-Jin
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.36 no.3
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    • pp.259-268
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    • 2012
  • This study measured the natural-convection heat transfer of two vertically staggered cylinders with varying vertical pitch-to-diameter ($P_v$/D) and horizontal pitch-to-diameter ($P_h$/D) ratios. The measured heat-transfer rates for the lower cylinder agreed well with the existing heat-transfer correlations for a single cylinder. At the smallest $P_v$/D, the rising plume from the lower cylinder provides the upper cylinder with a preheated flow, and the heat-transfer rates of the upper cylinder decrease, but increase very sensitively with $P_h$/D. However, at the largest $P_v$/D, the velocity effect dominates, and the heat-transfer rates of the upper cylinder are larger than that of a single cylinder, and decrease less sensitively with $P_h$/D. Even if $P_h$/D is increased, the heat-transfer rate of the upper cylinder is higher than that of the lower cylinder because of the chimney and side flow effects. This work expanded the flow ranges to turbulent flows. The cupric acid-copper sulfate ($H_2SO_4-CuSO_4$) electroplating system was adopted for the measurements of the mass-transfer rates instead of the heat-transfer experiments based on the analogy concept. The measurements were made by varying $P_v$/D (1.02-5) and $P_h$/D (0-2) in both laminar and turbulent flows. The Rayleigh number ranged from $1.5{\times}10^8$ to $2.5{\times}10^{10}$, and the Prandtl number was 2,014.

Characteristics of MOCVD Cobalt on ALD Tantalum Nitride Layer Using $H_2/NH_3$ Gas as a Reactant

  • Park, Jae-Hyeong;Han, Dong-Seok;Mun, Dae-Yong;Yun, Don-Gyu;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.377-377
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    • 2012
  • Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

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OECD High Production Volume Chemicals Program: Ecological Risk Assessment of Copper Cyanide (대량생산화학물질 초기위해성평가: 시안화구리의 초기 생태위해성평가)

  • Baek, Yong-Wook;Kim, Eun-Ju;Yoo, Sun-Kyoung;Ro, Hee-Young;Kim, Hyun-Mi;Eom, Ig-Chun;Kim, Pil-Je
    • Korean Journal of Ecology and Environment
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    • v.44 no.3
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    • pp.272-279
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    • 2011
  • Copper cyanide is a chemical produced in large quantities with 2,500 tonnes being produced in 2006. It is mainly used for electroplating copper, particularly alkali-Cu plate and brass plating. The purpose of this study is to reassess the physicochemical properties and environmental fate of copper cyanide based on reliable data and and to conduct an ecotoxicity test according to the OECD test guidelines as an initial environmental risk assessment (need to state where this was done). Metal containing inorganic substances are not subject to degradation, biodegradation or hydrolysis. Aquatic toxicity tests of copper cyanide were conducted according to OECD test guideline 201, 202 and 203 for green algae, daphnia, and fish, respectively. The following acute toxicity test results were obtained for aquatic species: 0.089 mg $L^{-1}$ (Algae, 72 Hr-$EC_{50}$); 0.21 mg $L^{-1}$ (flea, 48 Hr-$LC_{50}$); 0.62 mg $L^{-1}$ (Fish, 96 Hr-$ErC_{50}$). The chemical possesses properties indicating a hazard for the aquatic environment (acute toxicity in fish, daphnia and algae below 1.0 mg $L^{-1}$). As a result of this study, copper cyanide has become a candidate for detailed risk assessment. Countries that produce this chemical in significant quantities are recommended to perform specific assessments.