• 한국진공학회지
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• 제17권2호
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• pp.109-112
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• 2008

고집적화된 반도체 소자 기술은 나날이 발전하고 있다. 특히 금속 배선을 위한 박막제조 공정에서 배선 선폭은 감소하고 있으며, 그 길이는 더욱 증가하게 되었다. 이러한 상황에서 금속 배선 물질에 대한 연구가 진행 되었고 그 결과 Cu가 그 대안으로 인식되었다. 하지만 Cu는 저온에서도 Si기판과 반응하므로 인하여 접촉면의 저항이 급격히 증가하여 소자로써의 기능이 불가능하게 되는 단점이 있다. 따라서 이러한 Cu와 Si기판 사이의 반응을 효과적으로 방지할 확산방지막의 개발이 필수 요건이 되었다. 본 연구는 Cu의 확산을 방지하는 W-C-N 확산방지막에 대한 연구로 질소비율과 열처리 온도를 변화하여 실험하였으며, 특히 격자상수 변화를 통하여 W-C-N 확산방지의 특성에 대하여 연구하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권4호
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• pp.210-218
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• 2000

For the fabrication of $YBa_2Cu_3O_x$ thick film, a substrate of $Y_2BaCuO_5$ was fabricated by adding $CeO_2$ into $Y_2BaCuO_5$ and two types of doping materials added with binder material were prepared. Each doping material was patterned on $Y_2BaCuO_5$substrate by the screen printing method and then was annealed at the temperature with a few step. It could be observed by X-ray diffraction patterns and SEM photographs that through the diffusion process of the $Y_2BaCuO_5$ and each doping material, the $YBa_2Cu_3O_x$ phase was formed. And with n additive of $CeO_2$ the thickness of formed $YBa_2Cu_3O_x$decreased. From the experiment of current limiting on thick film, the sample with thiner thickness of $YBa_2Cu_3O_x$ showed the more effective characteristics of current limiting.

• 한국표면공학회지
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• 제38권1호
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• pp.28-36
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• 2005

In this study, the reflow characteristics of copper thin films which is expected to be used as interconnection materials in the next generation semiconductor devices were investigated. Cu thin films were deposited on the TaN diffusion barrier by metal organic chemical vapor deposition (MOCVD) and annealed at the temperature between 250℃ and 550℃ in various ambient gases. When the Cu thin films were annealed in the hydrogen ambience compared with oxygen ambience, sheet resistance of Cu thin films decreased and the breakdown of TaN diffusion barrier was not occurred and a stable Cu/TaN/Si structure was formed at the annealing temperature of 450℃. In addition, reflow properties of Cu thin films could be enhanced in H₂ ambient. With Cu reflow process, we could fill the trench patterns of 0.16～0.24 11m with aspect ratio of 4.17～6.25 at the annealing temperature of 450℃ in hydrogen ambience. It is expected that Cu reflow process will be applied to fill the deep pattern with ultra fine structure in metallization.

• 한국재료학회지
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• 제17권12호
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• pp.664-668
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• 2007

The magnetron sputtering was used to deposit Ni buffer layers on the polyimide surfaces to increase the adhesion strength between Cu thin films and polyimide as well as to prevent Cu diffusion into the polyimide. The Ni layer thickness was varied from 100 to $400{\AA}$. The adhesion strength increased rather significantly up to $200{\AA}$ of Ni thickness, however, there was no significant increase in strength over $200{\AA}$. The XPS analysis revealed that Ni thin films could increase the adhesion strength by reacting with the polar C=O bonds on the polyimide surface and also it could prevent Cu diffusion into the polyimide. The Cu/Ni/ polyimide multilayer thin films showed a high stability even at the high heating temperature of $200^{\circ}C$, however, at the temperature of $300^{\circ}C$, Cu diffused through the Ni buffer layer into polyimide, resulting in the drastic decrease in adhesion strength.

• 한국재료학회지
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• 제13권2호
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• pp.101-105
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• 2003

In this study, we have investigated the availability of the electroless Ni-B plating for a diffusion barrier of the bus electrode. The Ni-B layer of 1$\beta$: thick was electroless deposited on the electroplated Cu bus electrode for AC plasma display. The layer was to encapsulate Cu bus electrode to prevent from its oxidation and to serve as a diffusion barrier against Cu contamination of the transparent dielectric layer in AC plasma display. The microstructure of the as-plated barrier layer was made of an amorphous phase and the structure was converted to crystalline at about 30$0^{\circ}C$. The concentration of boron was about 5∼6 wt.% in the electroless Ni-B deposit regardless of DMAB concentration. The electroless Ni-B deposit was coated on the surface of the electroplated Cu bus electrode uniformly. And the electroless Ni-B plating was found to be an appropriate process to form the diffusion barrier.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.188-188
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Meta Oxide Semiconductor) based electronic devices, the electronic devices, become much faster and smaller size that are promising property of semiconductor market. However, very narrow interconnect line width has some disadvantages. Deposition of conformal and thin barrier is not easy. And metallization process needs deposition of diffusion barrier and glue layer for EP/ELP deposition. Thus, there is not enough space for copper filling process. In order to get over these negative effects, simple process of copper metallization is important. In this study, Cu-V alloy layer was deposited using of DC/RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth surface. Cu-V film's thickness was about 50 nm. Cu-V alloy film deposited at $150^{\circ}C$. XRD, AFM, Hall measurement system, and AES were used to analyze this work. For the barrier formation, annealing temperature was 300, 400, $500^{\circ}C$ (1 hour). Barrier thermal stability was tested by I-V(leakage current) and XRD analysis after 300, 500, $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However vanadium-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Therefore thermal stability of vanadium-based diffusion barrier is desirable for copper interconnection.

• 상하수도학회지
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• 제33권3호
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• pp.205-213
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• 2019

Batch adsorption tests were performed to evaluate the applicability of adsorption kinetic model by using hydrogel chitosan bead crosslinked with glutaraldehyde (HCB-G) for Cu(II) as cation and/or phosphate as anion. Pseudo first and second order model were applied to determine the sorption kinetic property and intraparticle and Boyd equation were used to predict the diffusion of Cu(II) and phosphate at pore and boundary-layer, respectively. According to the value of theoretical and experimental uptake of Cu(II) and phosphate, pseudo second order is more suitable. On comparison with the value of adsorption rate constant (k), phosphate kinetic was 2-4 times faster than that of Cu(II) at any experimental condition indicating the electrostatic interaction between ${NH_3}^+$ and phosphate is dominated at the presence of single component. However, when Cu(II) and phosphate simultaneously exist, the value of k for phosphate was sharply decreased and then the difference was not significant. Both diffusion models confirmed that the sorption rate was controlled by film mass transfer at the beginning time (t < 3 hr) and pore diffusion at next time section (t > 6 hr).

• 한국진공학회지
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• 제9권3호
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• pp.267-272
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• 2000

electroplating(EP)법을 이용하여 ULSI용 Cu 박막을 제조하였다. seed Cu는 sputtering으로 증착하였으며, 확산방지막으로 TaN를 사용하였다. 제작된 EP Cu 박막은 seed Cu의 영향으로 열처리 조건에 관계없이 Cu(111)방향으로 강하게 우선 배향 하였다. 열처리 온도와 시간이 증가함에 따라 Cu박막의 미세조직이 non-columnar structure에서 약 2배 이상 결정립 성장하여 columnar structure로 바뀌었으며, 또한 as-deposit시 관찰되었던 stacking fault, twin, dislocation들이 상당히 줄어드는 것이 관찰되었다. Cu의 확산에 의하여 생기는 copper-silicide는 관찰할 수 없었으며, 이것은 두께 45nm의 TaN막이 $450^{\circ}C$, 30분 열처리시 확산방지막으로 충분한 역할을 한 것으로 판단된다. Cu(111)우선 배향과 열처리에 의한 결정립 성장 및 defect감소는 Cu 박막의 결정립계에서 발생하는 electromigration 현상을 상당히 줄일 수 있을 것으로 판단된다.

• 한국자기학회지
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• 제16권1호
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• pp.75-78
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• 2006

텅스턴-보론-카본질소 화합물 박막(W-B-C-N)을 만들기 위하여 박막내에 보론과 카본 그리고 질소의 불순물을 주입한 다음 결정구조를 조사하였으며, 이러한 박막의 식각 특성을 조사하기 위하여 고온에서 열처리한 다음 Cu박막을 W-B-C-N 박막위에 증착한 다음에 열처리하였고 여기에서 열적인 특성을 조사하였다. $1000\;{\AA}$의 박막을 RF magnetron sputtering방법을 이용하여 증착한 후에 박막의 전기적구조적인 특성을 측정하였으며, scratch test를 통해 박막의 결합력을 측정하였고, XRD측정을 통하여 결정성을 조사하였으며, 열처리한 후 etching을 하여 nomarski 현미경을 통하여 확산방지막의 안정성을 조사하였다. 이로부터 확산방지막내의 보론과 카본 질소 등의 불순물이 들어감에 따라 Cu가 Si 속으로 얼마나 들어가는가를 효과적으로 조사하였다. W-B-C-N 확산방지막의 역할은 $850^{\circ}C$까지 고온 열처리를 하는 경우에 Cu 원자가 Si 속으로 확산되어 나가는 것을 효과적으로 방지하는 것을 알 수 있었다. 텅스텐-보론-카본질소 화합물 박막의 비저항은 질소 가스의 유량비를 조절함으로써 쉽게 조절할 수 있었으며, 텅스텐-보론-카본-질소 화합물 박막은 Cu 확산방지막으로 적용했을 때 적절한 질소 농도가 들어간 확산방지막에서는 효과적으로 Cu의 확산을 방지하는 것을 알 수 있었다.

• 한국표면공학회지
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• 제29권4호
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• pp.278-285
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• 1996

The structure of coating layer formed by hot dip Al-Cu alloy coating on Monel 1400 metal was studied. The coating layer consists of alloyed layer adjacent to the Monel 400 substrate and Al-Cu alloy. It was found that the hardness of coating increased with dipping time and heat treatment associated with the diffusion and the formation of intermetallic compound at the interface. However the thickness of coating layer was decreased at high dipping temperature due to tile higher viscosity of liquid coating alloy. Diffusion heat treatment at $600^{\circ}C$ after coating resulted in the disappearence of adhered Al(Cu) and $CuAl_2$ phases, and then they transformed into the new phases of CuAl and Al7Cu4Ni at coating layer.