• Proceedings of the KWS Conference
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• 2007.11a
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• pp.211-214
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• 2007

Sn-0.3Ag-0.7Cu 조성의 젖음 특성과 반응 특성을 Sn-1.0Ag-0.5Cu 및 Sn-3.0Ag-0.5Cu 합금의 결과와 비교, 분석하였다. 또한 Sn-0.3Ag-0.7Cu 조성의 용융 및 응고 특성을 DSC로 측정하고, 인장시험을 통한 stress-strain curve를 관찰하였다. 아울러 할로겐 함유량이 많은 플럭스를 사용하여 Sn-0.3Ag-0.7Cu 조성의 젖음 특성을 향상 시킬 수 있는지를 조사하였으며, Sn-0.3Ag-0.7Cu 조성에 미량의 In을 첨가하여 젖음 특성의 개선 정도를 분석하였다. 그 결과 할로겐 함유량이 높은 플럭스를 사용한 경우보다 미량의 In을 첨가한 경우에서 wettability의 향상을 보다 효과적으로 유도할 수 있음을 관찰할 수 있었다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.85-91
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• 2002

Even though electroless Hi and Sn-Ag-Cu solder are widely used materials in electronic packaging applications, interfacial reactions of the ternary Ni-Cu~Sn system have not been known well because of their complexity. Because the growth of intermetallics at the interface affects reliability of solder joint, the intermetallics in Ni-Cu-Sn system should be identified, and their growth should be investigated. Therefore, in present study, interfacial reactions between electroless Ni UB7f and 95.5Sn-4.0Ag-0.5Cu alloy were investigated focusing on morphology of the IMCs, thermodynamics, and growth kinetics. The IMCs that appear during a reflow and an aging are different each other. In early stage of a reflow, ternary IMC whose composition is Ni$_{22}$Cu$_{29}$Sn$_{49}$ forms firstly. Due to the lack of Cu diffusion, Ni$_{34}$Cu$_{6}$Sn$_{60}$ phase begins growing in a further reflow. Finally, the Ni$_{22}$Cu$_{29}$Sn$_{49}$ IMC grows abnormally and spalls into the molten solder. The transition of the IMCs from Ni$_{22}$Cu$_{29}$Sn$_{49}$ to Ni$_{34}$Cu$_{6}$Sn$_{60}$ was observed at a specific temperature. From the measurement of activation energy of each IMC, growth kinetics was discussed. In contrast to the reflow, three kinds of IMCs (Ni$_{22}$Cu$_{29}$Sn$_{49}$, Ni$_{20}$Cu$_{28}$Au$_{5}$, and Ni$_{34}$Cu$_{6}$Sn$_{60}$) were observed in order during an aging. All of the IMCs were well attached on UBM. Au in the quaternary IMC, which originates from immersion Au plating, prevents abnormal growth and separation of the IMC. Growth of each IMC is very dependent to the aging temperature because of its high activation energy. Besides the IMCs at the interface, plate-like Ag3Sn IMC grows as solder bump size inside solder bump. The abnormally grown Ni$_{22}$Cu$_{29}$Sn$_{49}$ and Ag$_3$Sn IMCs can be origins of brittle failure.failure.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.225-230
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• 2002

Sn was selected as an alloying element of Cu. The Cu-Sn thin layers were deposited on the Si substrates by the electroplating method and their properties were studied. By rapidly thermal annealing(RTA) up to 40$0^{\circ}C$ after electroplating, sheet resistance decreased and adhesion strength increased, but that trend was reversed at the 50$0^{\circ}C$ RTA. Cu-Sn particles grew dense and the surface was uniform up to 40$0^{\circ}C$, but at 50$0^{\circ}C$, empty area was introduced and the surface became rough owing to oxidation and particle coarsening and agglomeration. Deposited layer contained significant amount of Si, while pure Cu-Sn layer with the composition ratio of 90:10 was present only on the top surface. However, no significant change in the Cu composition within alloy layers occured by the RTA regardless of its temperature. This indicates that the Cu diffusion into the Si was suppressed by the presence of Sn.

• Journal of Korea Foundry Society
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• v.22 no.2
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• pp.89-96
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• 2002

This study examined the effects of adding Zn to Sn-3.5Ag solder on the microstructure changes and behavior of interface reaction of the solder joint with Cu substrate. The solder/Cu joints were examined with microscope to observe the characteristics of microstructure changes and interfacial reaction layer with aging treatment for up to 120 days at $150^{\circ}C$. Results of the microstructure changes showed that the microstructures were coarsened with aging treatment, while adding 1%Zn suppresses coarsening microstructures. The Sn-3.5Ag/Cu had a fast growth rate of the reaction layer in comparison with the Sn-3.5Ag-1Zn at the aging temperature of $150^{\circ}C$. Through the SEM/EDS analysis of solder joint, it was proved that intermetallic layer was $Cu_6Sn_5$ phase and aged specimens showed that intermetallic layer grew in proportion to $t^{1/2}$, and the precipitate of $Ag_3Sn$ occur to both inner layer and interface of layer and solder. In case of Zn-containing composite solder, $Cu_6Sn_5$ phase formed at the side of substrate and Cu-Zn-Sn phase formed at the other side in double layer. It seems that Cu-Zn-Sn phase formed at solder side did a roll of banrier to suppress the growth of the $Cu_6Sn_5$ layer during the aging treatment.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.9-17
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• 2008

Cu mushroom bumps were formed by electrodeposition and flip-chip bonded to Sn substrate pads. Contact resistances of the Cu-mushroom-bump joints were measured and compared with those of the Sn-planar-bump joints. The Cu-mushroom-bump joints, processed at bonding stresses ranging from 19.1 to 95.2 MPa, exhibited contact resistances near $15m\Omega$/bump. Superior contact-resistance characteristics to those of the Sn-planar-bump joints were obtained with the Cu-mushroom-bump joints. Contact resistance of the Cu-mushroom-bump joints was not dependent upon the thickness of the as-elecroplated Sn-capcoating layer ranging from $1{\mu}m$ to $4{\mu}m$. When the Sn-cap-coating layer was reflowed, however, the contact resistance was greatly affected by the thickness and the reflow time of the Sn-cap-coating layer.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.23-30
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• 2004

Interfacial reaction of Pb-free $Sn0.7wt{\%}Cu$ and $Sn3.8wt{\%}Ag0.7wt{\%}Cu$ solders and Pt during aging has been investigated. After the $Sn3.8wt{\%}Ag0.7wt{\%}Cu/Pt$ specimens were reflowed at $250^{\circ}C$ for 30s and the $Sn0.7wt{\%}Cu/Pt$ specimens were reflowed at $260^{\circ}C$, the specimens were aged at $125^{\circ}C,\;150^{\circ}C$ and $170^{\circ}C$ for 25-121 hours. The intermetallic thitkness and morphology change during aging were characterized using SEM, EDS and XRD. $PtSn_4$ and $PtSn_2$ were observed in the solder/pt interface and the intermetallic formation was governed by diffusion. The activation energy of intermetallic formation was 145.3 kJ/mol for$Sn3.8wt{\%}Ag0.7wt{\%}Cu/Pt$ specimens for $Sn0.7wt{\%}Cu/Pt$ specimens from the measurement of the intermetallic thickness with aging temperature and time.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.2
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• pp.27-31
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• 2009

Sn whiskers can grow from the pure Sn and high Sn-based finish and cause the electrical shorts and failures. Even with the wealth of information on whiskers, we have neither the clear understanding of whisker growth nor methods for its prevention. In this study, the whisker grain roots which connected with intermetallic layer were analyzed by high-resolution transmission electron microscopy (HR-TEM). In the Sn-Cu plated leadframe (LF) that was stored at ambient condition for 540 days, filament-shaped whiskers were grown on the Sn-plated surface and ${\eta}'-Cu_6Sn_5$ precipitates were widely distributed along the grain boundaries at the Sn matrix. The measured of the lattice fringes at the ${\eta}'-Cu_6Sn_5$ was $4.71{\AA}$ at the coarse grain and $2.91{\AA}$ at the fine grain. The $Cu_3Sn$ which generates the tensile stresses was not observed. The formation of $Cu_6Sn_5$ precipitates and intermetallic layer were strongly related to whisker growth, but, the whisker growth tendency does not closely relate with the geometric morphology of irregularly grown intermetallic compound (lMC).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.360.2-360.2
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• 2016

CuSn thin films were fabricated by rf magnetron co-sputtering method on the Si(100) substrate for evaluation of the antibacterial effect. The co-sputtering process was performed with different rf powers and sputtering times to regulate the thickness of the films and relative atomic ratio of Cu to Sn. The physicochemical properties of the CuSn thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), Optical microscope (OM), 4-point probe, and antibacterial test. An antibacterial test was conducted with Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) as changing contact times between CuSn fillms and bacteria suspension. We compared to the crystalline structures of films before sterilization and after sterilization by XRD measurement. The changes of oxidation states of Cu and Sn and the chemical environment of films before and after antibacterial test were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. After antibacterial test, the morphology of the films was checked with an OM images. The electrical properties of the CuSn films such as surface resistance and conductivity were measured by using 4-point probe.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.49-53
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• 2002

The Sn-Cu eutectic solder bump formation ($140{\mu}{\textrm}{m}$ diameter, $250{\mu}{\textrm}{m}$ pitch) by electroplating was studied for flip chip package fabrication. The effect of current density and plating time on Sn-Cu deposit was investigated. The morphology and composition of plated solder surface was examined by scanning electron microscopy. The plating thickness increased with increasing time. The plating rate increased generally according to current density. After the characteristics of Sn-Cu plating were investigated, Sn-Cu solder bumps were fabricated on optimal condition of 5A/dm$^2$, 2hrs. Ball shear test after reflow was performed to measure adhesion strength between solder bump and UBM (Under Bump Metallization). The shear strength of Sn-Cu bump after reflow was higher than that of before reflow.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.71-77
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• 2007

In this study, the mechanical and electrical properties of three different ball grid array (BGA) solder joints, consisting of Sn-37Pb, Sn-3.5Ag and Sn-3.5Ag-0.75Cu (all wt.%), with organic solderability preservative (OSP)-finished Cu pads were investigated as a function of reflow number. Based on scanning electron microscopy (SEM) analysis results, a continuous $Cu_6Sn5$, intermetallic compound (IMC) layer was formed at the solder/substrate interface, which grew with increasing reflow number. The ball shear testing results showed that the shear force peaked after 3 reflows (in case of Sn-Ag solder, 4 reflows), and then decreased with increasing reflow number. The electrical property of the joint gradually decreased with increasing reflow number.